• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.1
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• pp.183-190
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• 2010

We propose an eFuse one-time programmable (OTP) memory cell based on a logic process, which is programmable by an external program voltage. For the conventional eFuse OTP memory cell, a program datum is provided with the SL (Source Line) connected to the anode of the eFuse going through a voltage drop of the SL driving circuit. In contrast, the gate of the NMOS program transistor is provided with a program datum and the anode of the eFuse with an external program voltage (FSOURCE) of 3.8V without any voltage drop for the newly proposed eFuse cell. The FSOURCE voltage of the proposed cell keeps either 0V or the floating state at read mode. We propose a clamp circuit for being biased to 0V when the voltage of FSOURCE is in the floating state. In addition, we propose a VPP switching circuit switching between the logic VDD (=1.8V) and the FSOURCE voltage. The layout size of the designed eFuse OTP memory IP with Dongbu HiTek's $0.15{\mu}m$ generic process is $359.92{\times}90.98{\mu}m^2$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.7
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• pp.1227-1234
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• 2008

In this paper is designed a 256-bit synchronous OTP(one-time programmable) memory required in application fields such as automobile appliance power ICs, display ICs, and CMOS image sensors. A 256-bit synchronous memory cell consists of NMOS capacitor as antifuse and access transistor without a high-voltage blocking transistor. A gate bias voltage circuit for the additional blocking transistor is removed since logic supply voltage VDD(=1.5V) and external program voltage VPPE(=5.5V) are used instead of conventional three supply voltages. And loading current of cell to be programmed increases according to RON(on resistance) of the antifuse and process variation in case of the voltage driving without current constraint in programming. Therefore, there is a problem that program voltage can be increased relatively due to resistive voltage drop on supply voltage VPP. And so loading current can be made to flow constantly by using the current driving method instead of the voltage driving counterpart in programming. Therefore, program voltage VPP can be lowered from 5.9V to 5.5V when measurement is done on the manufactured wafer. And the sens amplifier circuit is simplified by using the sens amplifier of clocked inverter type instead of the conventional current sent amplifier. The synchronous OTP of 256 bits is designed with Magnachip $0.13{\mu}m$ CMOS process. The layout area if $298.4{\times}314{\mu}m2$.

• The KIPS Transactions:PartA
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• v.11A no.2
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• pp.115-122
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• 2004

In this paper, the multiple-valued adders and multipliers are implemented by current-mode CMOS. First, we implement the 3-valued T-gate and the 4-valued T-gate using current-mode CMOS which have an effective availability of integrated circuit design. Second we implement the circuits to be realized 2-variable 3-valued addition table and multiplication table over finite fields $GF(3^2)$, and 2-variable 4-valued addition table and multiplication table over finite fields $GF(4^2)$ with the multiple-valued T-gates. Finally, these operation circuits are simulated under $1.5\mutextrm{m}$ CMOS standard technology, $15\mutextrm{A}$ unit current, and 3.3V VDD voltage Spice. The simulation results have shown the satisfying current characteristics. The 3-valued adder and multiplier, and the 4-valued adder and multiplier implemented by current-mode CMOS is simple and regular for wire routing and possesses the property of modularity with cell array. Also, since it is expansible for the addition and multiplication of two polynomials in the finite field with very large m, it is suitable for VLSI implementation.