• Korean Journal of Audiology
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• v.23 no.3
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• pp.160-166
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• 2019

Lots of neuroimaging and animal studies have revealed that tinnitus and hyperacusis share the same patterns in the bottom up central auditory process. The aim was to identify the abnormal central patterns commonly observed in both tinnitus and hyperacusis in humans. We investigated two cases of normal hearing: a tinnitus patient and a hyperacusis patient. We compared the differences between the severe temporal hyper-activated state (STHS), with spikes, fast beta and gamma frequencies after noise exposure, and the mild temporal hyperactivated state (MTHS), in no sound exposed condition. The power of the gamma band in the two cases was increased in both auditory cortices compared to the other brain regions. Our results of human with normal hearing were the first to identify how tinnitus and hyperacusis caused by sound are abnormally active and how they maintain constant pathological states.

• Journal of Audiology & Otology
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• v.23 no.3
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• pp.160-166
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• 2019

Lots of neuroimaging and animal studies have revealed that tinnitus and hyperacusis share the same patterns in the bottom up central auditory process. The aim was to identify the abnormal central patterns commonly observed in both tinnitus and hyperacusis in humans. We investigated two cases of normal hearing: a tinnitus patient and a hyperacusis patient. We compared the differences between the severe temporal hyper-activated state (STHS), with spikes, fast beta and gamma frequencies after noise exposure, and the mild temporal hyperactivated state (MTHS), in no sound exposed condition. The power of the gamma band in the two cases was increased in both auditory cortices compared to the other brain regions. Our results of human with normal hearing were the first to identify how tinnitus and hyperacusis caused by sound are abnormally active and how they maintain constant pathological states.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.751-754
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• 2003

Metamorphic HEMTs (MHEMTs) have emerged as excellent challenges for the design and fabrication of high-speed HEMTs for millimeter-wave applications. Some of improvements result from improved mobility and larger conduction band discontinuity in the channel, leading to more efficient modulation doping, better confinement, and better device performance compared with pseudomorphic HEMTs. We have studied the calibration on the DC and RF characteristics of the MHEMT device using I $n_{0.53}$G $a_{0.47}$As/I $n_{0.52}$A1$_{0.48}$As modulation-doped heterostructure on the GaAs wafer. For the optimized device performance simulation, we calibrated the device performance of 0.1-${\mu}{\textrm}{m}$ $\Gamma$-gate MHEMT fabricated in our research center using the 2D ISE-DESSIS device simulator. With this calibrated parameter set, we have obtained very good reproducibility. The device simulation on the DC and RF characteristics exhibits good reproducibility for our 0.1-${\mu}{\textrm}{m}$ -gate MHEMT device compared with the measurements. We expect that our calibration result can help design over-100-GHz MHEMT devices for better device performance.ormance.

• Journal of The Korean Astronomical Society
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• v.40 no.4
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• pp.153-155
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• 2007

We have analyzed H and $K_s$-band images of the Arches cluster obtained using the NIRC2 instrument on Keck with the laser guide star adaptive optics (LGS AO) system. With the help of the LGS AO system, we were able to obtain the deepest ever photometry for this cluster and its neighborhood, and derive the background-subtracted present-day mass function (PDMF) down to $1.3M_{\bigodot}$ for the 5"-9" annulus of the cluster. We find that the previously reported turnover at $6M_{\bigodot}$ is simply due to a local bump in the mass function (MF), and that the MF continues to increase down to our 50 % completeness limit ($1.3M_{\bigodot}$) with a power-law exponent of ${\Gamma}$ = -0.91 for the mass range of 1.3 < M/$M_{\bigodot}$ < 50. Our numerical calculations for the evolution of the Arches cluster show that the ${\Gamma}$ values for our annulus increase by 0.1-0.2 during the lifetime of the cluster, and thus suggest that the Arches cluster initially had ${\Gamma}$ of $-1.0{\sim}-1.1$, which is only slightly shallower than the Salpeter value.

• The Bulletin of The Korean Astronomical Society
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• v.43 no.1
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• pp.55.1-55.1
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• 2018

Studies on rotation-powered pulsars with strong surface magnetic field may help us clarify the unclear link between magnetars and canonical radio pulsars because the magnetar-like emission is expected to be observed. PSR J1119-6127 associated with SNR G292.2-0.5 has a high magnetic field of $4.1{\times}1013$ gauss, and a young characteristic age of ~1700 years can be served as the good candidate to compare with magnetars and rotation-powered pulsars. The glitch accompanied by the radiative changes detected in 2007 is the first case we observed for a rotationally powered radio pulsar. This pulsar experienced magnetar-like outbursts in mid. 2016, similar to the 2006 transition occurred on the other radio-quiet rotation-powered pulsar with strong surface magnetic field, PSR J1846-0258. In this talk, I'll report the investigation with X-ray and gamma-ray data of this magnetar-like pulsar. A sudden decrease in the gamma-ray emission at the GeV band was detected immediately after the X-ray outburst. Accompanying with the disappearance of the radio pulsation, the gamma-ray pulsation cannot be resolved as well after the outburst. We tried to derive the timing behavior and some intriguing features of this pulsar in this work corresponding to the outburst using the Swift data, NuSTAR and XMM observations.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.5
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• pp.192-195
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• 2007

Structural and electronic properties of bulk GaN with nitrogen vacancy($V_N$), oxygen substitution on nitrogen site($O_N$), and complex of nitrogen vacancy and oxygen substitution on nitrogen site($V_N-O_N$) were investigated using the first principle calculations. It was found that stability of defect formation is dependent on the epilayer growth conditions. The complex of $V_N-O_N$ is energetically the most favorable state in a condition of Ga-rich, however, oxygen substitution in nitrogen site is the most favorable state in N-rich condition. The electronic property of complex with negative charge states at $\Gamma$ point was changed from semiconductor to metal. On the contrary, the properties of nitrogen vacancy except for neutral charge state have shown the semiconductor characteristics at $\Gamma$ point. In the oxygen substitution on nitrogen site, the energy differences between conduction band minimum and Fermi level were smaller than that of defect-free GaN.

• Journal of Radiation Industry
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• v.4 no.1
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• pp.65-71
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• 2010

Two chitinase producing strains CHI2 and CHI4 were isolated from soybean rhizosphere soil. Both the strains belonged to Lysobacter enzymogenes as indicated by 16S rDNA sequence analysis. Though strain CHI2 and CHI4 produced extracellular chitinase, they differ in their chitinolytic activity. CHI4 produced approximately three times the higher amounts of enzyme than that of CHI2 under specified conditions. CHI2 produced $535.67U\;l^{-1}$ of chitinase after 48 h incubation with a specific activity of $3.91U\;mg^{-1}$ of protein while strain CHI4 produced $1584.13U\;l^{-1}$ of chitinase with a specific activity of $10.88U\;mg^{-1}$ protein. SDS-PAGE analysis indicated that the molecular weight of chitinase enzyme was approximately 45 kDa. A faint band with a molecular weight of 55 kDa reveals the possibility for the presence of another kind of chitin binding protein. Mutant library was developed by exposing the isolates to gamma rays at their $LD_{99}$ value (0.23 kGy). Totally, 11 mutants of CHI2 and CHI4 are reported to have enhanced chitinase activity. Several leaky mutant clones with decreased enzyme activity and a defective mutant (CHI2-M16) with complete loss of chitinase activity were also identified. CHI4-M18, CHI4-M8 and CHI4-M29 showed 78.8, 41.5, and 31.9% increased chitinase activity over wild type CHI4.

• Nuclear Engineering and Technology
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• v.50 no.8
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• pp.1364-1371
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• 2018

An extensive investigation of photon interaction properties has been made for $Zn_xTe_{100-x}$ alloys (where x = 5, 20, 30, 40, 50) to explore its possible use in sensing and shielding gamma radiations. The results show better and stable response of ZnTe alloys for various photon interaction properties over the wide energy range, with an additional benefit of ease in fabrication due to lower melting points of Zn and Te. Mass attenuation coefficient values show strong dependence on photon energy as well as composition. Effective atomic number has maximum value for $Zn_5Te_{95}$ and lowest for $Zn_{50}Te_{50}$ in the entire energy region. The alloy sample with maximum $Z_{eff}$ shows minimal value of $N_e$ and vice versa. Mean free path follows inverse trend as observed for mass attenuation coefficient. The exposure and energy absorption buildup factors depend upon photon energy, penetration thickness and composition (effective atomic number) of $Zn_xTe_{100-x}$ alloys. It finds its application for sensing and shielding from highly energetic and highly penetrating photons at sites where radioactive materials were used and visibility of material is not a big constraint. Further, energy down conversion property of ZnTe alloys with subsequent emission in green band suggests its potential use in sensing gamma photons.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.367-370
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• 1998

A hybrid-integrated SAW(surface acoustic wave) douplexer including transmitter(Tx) filter, receiver(Rx) filter an dantenna terminal has been studied. The prototype duplxer was designed for CDMA system application in the 800 MHz-band. Ladder type SAW filters consisting of one port SAW resonators wer integrated on epoxy substrate to demonstrate the feasiblity of antenna duplexer. In order to perform the duplexing function, a strip line for impedance transformaton with length of .gamma./4 was inserted at rx path. The fabricted duplexer has an insertion loss of 3.0 dB at Tx path and 3.7 dB at Rx path. The attenuation has more than 40dB.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.380-380
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• 2010

The chalcopyrite $ZnIn_2S_4$ epilayers were grown on the GaAs substrate by using a hot-wall epitaxy (HWE) method. The crystal field and the spin-orbit splitting energies for the valence band of the $ZnIn_2S_4$ have been estimated to be 0.1541 eV and 0.0129 eV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the $\Gamma_5$ states of the valence band of the $ZnIn_2S_4$/GaAs epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-}$, $B_{1^-}$, and $C_1$-exciton peaks for n = 1. Also, we obtained the $A_{\infty^-}$ and B-exciton peaks from the PC spectrum at 293 K.