• International Journal of Contents
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• v.12 no.3
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• pp.12-16
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• 2016

Brain computer interfaces (BCI) usually have focused on classifying the explicitly-expressed intentions of humans. In contrast, implicit intentions should be considered to develop more intelligent systems. However, classifying implicit intention is more difficult than explicit intentions, and the difficulty severely increases for subject independent classification. In this paper, we address the subject independent classification of implicit intention based on electroencephalography (EEG) signals. Among many machine learning models, we use the support vector machine (SVM) with radial basis kernel functions to classify the EEG signals. The Fisher scores are evaluated after extracting the gamma, beta, alpha and theta band powers of the EEG signals from thirty electrodes. Since a more discriminant feature has a larger Fisher score value, the band powers of the EEG signals are presented to SVM based on the Fisher score. By training the SVM with 1-out of-9 validation, the best classification accuracy is approximately 65% with gamma and theta components.

• Journal of the Korean Vacuum Society
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• v.21 no.3
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• pp.136-141
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• 2012

We report investigation of structural and optical characteristics of $In_2Se_3$ thin films fabricated by thermal annealing process. Indium (In) is deposited on substrates by sputtering methods and $In_2Se_3$ thin films are fabricated by thermal annealing it with selenium vapor. The annealing temperature was changed from $150^{\circ}C$ to $400^{\circ}C$. We observe formation and phase changes of $In_2Se_3$ thin films with increase of annealing temperature. Conglomeration of In is observed at low annealing temperature (${\leq}150^{\circ}C$). $In_2Se_3$ phases are started to form at $200^{\circ}C$ and ${\gamma}-In_2Se_3$ phase form at $350^{\circ}C$. High-quality ${\gamma}-In_2Se_3$ thin film with wurtzite structure is obtained at $400^{\circ}C$ of annealing temperature. Furthermore, we confirm that band gaps of $In_2Se_3$ thin films are increased according to increase of annealing temperature. Optical band gap of high-quality ${\gamma}-In_2Se_3$ is found to be 1.796eV.

• The Korean Journal of Pharmacology
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• v.32 no.3
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• pp.293-300
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• 1996

During the development of hepatic encephalopathy after thioacetamide (TAA) injection to rat, EEG was recorded at two different states: without or with tactile stimulation of tail at regular intervals. Calculations based on the spectral and band analysis were used. The changes in the power spectra and bands were examined in 3 different behavioral stages: normal, mild ataxia and severe ataxia. In normal rats, the stimulation produced the increase in the power of the theta $(3.5{\sim}8\;Hz)$ and the gamma $(30{\sim}50\;Hz)$ bands. These changes could not be produced in rats with the mild and severe ataxia. The changes in the power of the theta band occurred earlier than those of the beta3 and the gamma bands in the stimulated state. Gradual decreases in the spectral power of the beta3 $(21{\sim}30\;Hz)$ and the gamma bands were correlated with the progress of the stages from normal condition to mild to severe ataxia in both unstimulated and stimulated states. The results indicate that the spectral and band analysis used in this study can quantify the severity of the neurological malfunction during HE.

• Korean Journal of Remote Sensing
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• v.39 no.1
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• pp.65-76
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• 2023

The Gamma Portable Radar Interferometer (GPRI) is a ground-based real aperture radar (RAR) that can acquire images with high spatial and temporal resolution. The GPRI ground-based radar used in this study composes three antennas with a Ku-band frequency of 17.1-17.3 GHz (1.73-1.75 cm of wavelength). It can measure displacement over time with millimeter-scale precision. It is also possible to adjust the observation mode by arranging the transmitting and receiving antennas for various applications: i) obtaining differential interferograms through the application of interferometric techniques, ii) generation of digital elevation models and iii) acquisition of full polarimetric data. We introduced the hardware configuration of the GPRI ground-based radar, image acquisition, and characteristics of the collected radar images. The interferometric phase difference has been evaluated to apply the multi-temporal interferometric SAR application (MT-InSAR) using the first observation campaigns at Pusan National University in Geumjeong-gu, Busan.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.5
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• pp.69-76
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• 2004

In this paper, a VCDRO (Voltage Control Dielectric Resonator Oscillator) with low phase noise for X-band application has been designed and fabricated. A low noise and low flicker noise MESFET and a high Q dielectric resonator were selected to obtain good phase noise Performance. Also, a varactor diode having high Q, qualify factor was used to reduce the loading effects and a big Gamma of diode was chosen for linearity of frequency over voltage tuning range. The fabricated circuits was simulated with circuit design tools, ADS to provide the optimum performances. As the measured results of fabricated oscillator, the output power was 5.8 ㏈m at center frequency 12.05㎓ and harmonic suppression -30㏈c, phase noise -114 ㏈c at 100 KHz offset frequency, respectively, and the frequency tuning range as the function of valtage applied to varactor diode was 15.2 MHz and its power variation with frequency was 0.2 ㏈. This oscillator could be available to a local oscillator in X-band.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.358-358
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• 2012

The application of BZO (Boron-doped Zinc Oxide) films use as the TCO(Transparent Conductive Oxide) material for display and solar cell industries, where the conductivity of the BZO films plays a critical role for improvement of cell performance. Thin BZO films are deposited on glass substrates by using RF sputter system. Then charging flow rates of O2 gas from zero to 10 sccm, thereby controlling the impurity concentration of BZO. BZO deposited on soda lime glass and RF power was 300 W, frequency was 13.56 MHz, and working pressure was $5.0{\times}10-6$ Torr. The Substrate and glass between distance 200 mm. We measured resistivity, conductivity, mobility by hall measurement system. Optical properties measured by photo voltaic device analysis system. We measured surface build according to oxygen flow rate from XPS (X-ray Photoelectron Spectroscopy) system. The profile of the energy distribution of the electrons emitted from BZO films by the Auger neutralization is measured and rescaled so that Auger self-convolution arises, revealing the detail structure of the valence band. It may be observed coefficient ${\gamma}$ of the secondary electron emission from BZO by using ${\gamma}$-FIB (Gamma-Focused Ion Beam) system. We observed the change in electrical conductivity by correlation of the valence band structure. Therefore one of the key issues in BZO films may be the valence band that detail structure dominates performance of solar cell devices. Demonstrating the secondary electron emission by the Auger neutralization of ions is useful for the determination of the characteristics of BZO films for solar cell and display developments.

• Journal of Yeungnam Medical Science
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• v.10 no.2
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• pp.360-368
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• 1993

GTP binding protein (G-protein) associated with membrane and involved in signal transduction was isolated from bovine brain, and molecular weight of G protein was observed. As the results, cell membranes were homogenized from bovine brain tissues and proteins of membrane were gained using 1% cholate, and progressed the chromatography. The purification process was performed by step, DEAE-Sephacel, Ulttrogel AcA 34 and heptylamine-Sepharose column chromatography. The chromatographic fractions were confirmed by GTP binding assay and SDS-polyacrylamide gel electrophoresis. Molecular weight of $Go{\alpha}$ was revealed 39,000 dalton and $G{\beta}$ 36,000 dalton. One more step of heptylamine-Sepharose was enforced to purify the GTP binding protein. Finally I gained the GTP binding protein isolated subtype of $Go{\alpha}$ and $G{\beta}$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.11
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• pp.21-27
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• 2004

In this paper, millimeter-wave monolithic integrated circuit(MIMIC) low noise amplifier(LNA) for V-band, which is applicable to 60 GHz wireless local area network(WLAN), was fabricated using the high performance 0.1 ${\mu}{\textrm}{m}$ $\Gamma$-gate pseudomorphic high electron mobility transistor(PHEMT). The DC characteristics of PHEMT are drain saturation current density(Idss) of 450 mA/mm and maximum transconductance(gm, max) of 363.6 mS/mm. The RF characteristics were obtained the current gain cut-off frequency(fT) of 113 GHz and the maximum oscillation frequency(fmax) of 180 GHz. V-band MIMIC LNA was designed using active and passive device library, which is composed of 0.1 ${\mu}{\textrm}{m}$ $\Gamma$-gate PHEMT and coplanar waveguide(CPW) technology. The designed V-band MIMIC LNA was fabricated using integrated unit processes of active and passive device. The measured results of V-band MIMIC LNA are shown S21 gain of 21.3 dB, S11 of -10.6 dB at 60 GHz and S22 of -29.7 dB at 62.5 GHz. The measured result of V-band MIMIC LNA was shown noise figure (NF) of 4.23 dB at 60 GHz.

• Journal of Sensor Science and Technology
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• v.10 no.1
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• pp.62-70
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• 2001

The ZnSe sample grown by chemical bath deposition (CBD) method were annealed in Ar gas at $45^{\circ}C$. Using extrapolation method of X-ray diffraction pattern, it was found to have zinc blend structure whose lattice parameter $a_o$ was $5.6687\;{\AA}$. From Hall effect, the mobility was likely to be decreased by impurity scattering at temperature range from 10 K to 150 K and by lattice scattering at temperature range from 150 K to 293 K. The band gap given by the transmission edge changed from $2.700{\underline{5}}\;eV$ at 293 K to $2.873{\underline{9}}\;eV$ at 10 K. Comparing photocurrent peak position with transmission edge, we could find that photocurrent peaks due to excition electrons from valence band, ${\Gamma}_8$ and ${\Gamma}_7$ and to conduction band ${\Gamma}_6$ were observed at photocurrent spectrum. From the photocurrent spectra by illumination of polarized light on the ZnSe thin film, we have found that values of spin orbit coupling splitting ${\Delta}so$ is $0.098{\underline{1}}\;eV$. From the PL spectra at 10K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be $0.061{\underline{2}}\;eV$ and the dissipation energy of the donor -bound exciton and acceptor-bound exciton to be $0.017{\underline{2}}\;eV$, $0.031{\underline{0}}\;eV$, respectively.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.7
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• pp.37-44
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• 1997

A dadaptive refinement tetrahedron mesh has been presented for using in full band GaAs monte carlo simulation. A uniform tetrahedron mesh is used without regard to energy values and energy variety in case of the past full band simulation. For the uniform tetrahedron mesh, a fine tetrahedron is demanded for keeping up accuracy of calculation in the low energy region such as .GAMMA.-valley, but calculation time is vast due to usin gthe same tetrahedron in the high energy region. The mesh of this study, thererfore, is consisted of the fine mesh in the low energy and large variable energy region and rough mesh n the high energy. The density of states (DOS) calculated with this mesh is compared with the one of the uniform mesh. The DOS of this mesh is improved th efive times or so in root mean square error and the ten times in the correlation coefficient than the one of a uniform mesh. This refinement mesh, therefore, can be used a sthe basic mesh for the full band GaAs monte carlo simulation.