• Restorative Dentistry and Endodontics
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• v.22 no.2
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• pp.575-595
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• 1997

Replacement resorption is followed by the delayed replantation of an avulsed tooth. Currently no effective treatment is substantiated for replacement resorption. The purpose of this study was to investigate the effect of stannous fluoride, bisphosphonate (etidronate disodium) and gallium nitrate, which have been shown to reduce dentin resorption, on human dentin. Osteoclasts were collected from tibeas of chick embryo. The cells were well agitated to prevent adhesion and seeded onto the sliced human dentin wafers which had been soaked in either culture media (control), or several different concentrations of stannous fluoride, etidronate disodium (l-hydroxyethylidene -1,1-bisphosphonate disodium), and gallium nitrate. Resorption was measured by counting the number of resorptive pit produced by the cells. Results are as follows. Stannous fluoride and etidronate disodium showed statistically significant reduction of dentin resorption(p<0.05) but the effect of stannous fluoride seemed to be its high cytotoxicity. Etidronate disodium did not show cytotoxicities in all experimented concentrations. Gallium nitrate did not show differences in resorption either between different concentrations or from the control group.

• Bulletin of the Korean Chemical Society
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• v.25 no.1
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• pp.51-54
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• 2004

Gallium nitride (GaN) powders were prepared by calcining a gallium(III) nitrate salt in flowing ammonia in the temperature ranging from 500 to 1050 $^{\circ}C$. The process of conversion of the salt to GaN was monitored by X-ray diffraction and $^{71}Ga$ MAS (magic-angle spinning) NMR spectroscopy. The salt decomposed to ${\gamma}-Ga_2O_3$ and then converted to GaN without ${\gamma}-{\beta}Ga_2O_3$ phase transition. It is most likely that the conversion of ${\gamma}-Ga_2O_3$ to GaN does not proceed through $Ga_2O$ but stepwise via amorphous gallium oxynitride ($GaO_xN_y$) as intermediates. The GaN nanowires and microcrystals were obtained by calcining the pellet containing a mixture of ${\gamma}-Ga_2O_3$ and carbon in flowing ammonia at 900 $^{\circ}C$ for 15 h. The growth of the nanowire might be explained by the vapor-solid (VS) mechanism in a confined reactor. Room-temperature photoluminescence spectra of as-synthesized GaN powders obtained showed the emission peak at 363 nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.851-854
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• 2001

Europium-activated Ga$_2$O$_3$powders were prepared by modified "Pechini method" from mixed aqueous solutions of gallium nitrate, europium nitrate, ethylene glycol and citric acid. The formation process and structure of the phosphor powders were investigated by means of TG/DTA, XRD and SEM. It has been found that the phosphor powders were amorphous up to 50$0^{\circ}C$ and changed into crystalline $\beta$-Ga$_2$O$_3$phase above $600^{\circ}C$. The resulting nano-sized powders were obtained. Red luminescence in emission spectra were observed at room temperature.

• Korean Journal of Materials Research
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• v.24 no.4
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• pp.214-220
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• 2014

In this research, a precipitation method was used to synthesize ${\beta}-Ga_2O_3$ powders with various particle morphologies and sizes under varying precipitation conditions, such as gallium nitrate concentration, pH, and aging temperature, using ammonium hydroxide and ammonium carbonate as precipitants. The obtained powders were characterized in detail by XRD, SEM, FT-IR, and TG-DSC. From the TG-DSC result, GaOOH phase was transformed to ${\beta}-Ga_2O_3$ at around $742^{\circ}C$, and weight loss percent was about 14 % when $NH_4OH$ was used as a precipitant. Also, ${\beta}-Ga_2O_3$ formed at $749^{\circ}C$ and weight loss percent was about 15 % when $(NH)_2CO_3$ was used as a precipitant. XRD results showed that the obtained $Ga_2O_3$ had pure monoclinic phase in both cases. When $(NH)_2CO_3$ was used as a precipitant, the particle shape changed and became irregular. The range of particle size was about $500nm-4{\mu}m$ based on various concentrations of gallium nitrate solution with $NH_4OH$. The particle size was increased from $1-2{\mu}m$ to $3-4{\mu}m$ and particle shape was changed from spherical to bar type by increasing aging temperature over $80^{\circ}C$.

• Journal of Microbiology and Biotechnology
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• v.29 no.6
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• pp.973-983
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• 2019

It is well known that iron is critical for bacterial growth and pathogenic virulence. Due to chemical similarity, $Ga^{3+}$ competes with $Fe^{3+}$ for binding to compounds that usually bind $Fe^{3+}$, thereby interfering with various essential biological reactions. In our present study, gallium(III) nitrate [$Ga(NO_3)_3$] could repress the growth of V. splendidus Vs without complete inhibition. In the presence of $Ga(NO_3)_3$, the secretion of homogentisic acid-melanin (HGA-melanin) in V. splendidus Vs cells could be increased by 4.8-fold, compared to that in the absence of $Ga(NO_3)_3$. HGA-melanin possessed the ability to reduce $Fe^{3+}$ to $Fe^{2+}$. In addition, HGA-melanin increased the mRNA levels of feoA and feoB, genes coding Fe2+ transport system proteins to 1.86- and 6.1-fold, respectively, and promoted bacterial growth to 139.2%. Similarly, the mRNA expression of feoA and feoB was upregulated 4.11-fold and 2.71-fold in the presence of $640{\mu}M$ $Ga(NO_3)_3$, respectively. In conclusion, our study suggested that although $Ga(NO_3)_3$ could interfere with the growth of V. splendidus Vs, it could also stimulate both the production of $Fe^{3+}$-reducing HGA-melanin and the expression of feoA and feoB, which facilitate $Fe^{2+}$ transport in V. splendidus Vs.

• Korean Journal of Materials Research
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• v.12 no.7
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• pp.517-521
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• 2002

Europium-activated $Ga_2$$O_3$ phosphor powders were prepared by Pechini method from the mixed aqueous solutions of gallium(III) nitrate, europium(III) nitrate, ethylene glycol and citric acid. The phase formation process and particle shape of the powders obtained were investigated by means of TG/DTA, XRD and SEM. It was found that the powders were amorphous or ${\gamma}$-$Ga_2$$O_3$-like phase up to $500^{\circ}C$ and then transformed into $\beta$- $Ga_2$$O_3$ phase above $600 ^{\circ}C$. The powders calcined below $1000^{\circ}C$ were spherical and nanometer-sized. Photoluminescence spectra measured at room temperature showed that the highest luminescence intensity was obtained for the sample synthesized under the conditions of 2 mol% Eu concentration and heat treatment at $1000^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.231-231
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• 2010

GaN는 상온에서 3.4 eV의 넓은 밴드갭을 갖는 직접천이형 반도체로 우수한 전기적/광학적 특성 및 화학적 안정성으로 발광 다이오드 및 레이저 다이오드 등과 같은 광전소자 응용을 위한 소재로 많은 연구가 진행되어왔다. 특히, GaN 나노구조의 경우 낮은 결함밀도, 빠른 구동 및 고집적 특성 등을 가지기 때문에 효과적으로 소자의 광학적/전기적 특성을 향상시킬 수 있어 나노구조 성장을 위한 연구가 활발히 진행되고 있다. 최근에는 Metal organic vapor deposition (MOCVD), hot filament chemical vapor deposition (CVD), molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE) 등 다양한 방법을 통해 성장된 GaN 나노구조가 보고되고 있다. 하지만 고가 장비 사용 및 높은 공정 온도, 복잡한 공정과정이 요구되며 크기조절, 조성비, 도핑 등과 같은 해결되어야 할 문제가 여전히 남아있다. 본 연구에서는 나노구조를 형성하기 위하여 보다 간단한 방법인 전기화학증착법을 이용하여 GaN 나노구조를 ITO 및 FTO가 증착된 전도성 glass 기판 위에 성장하였고 성장 메커니즘 및 그 특성을 분석하였다. GaN 나노구조는 gallium nitrate와 ammonium nitrate가 혼합된 전해질 용액에 Pt mesh 구조 및 전도성 glass 기판을 1cm의 거리를 유지하도록 담가두고 일정한 전압을 인가하여 성장시켰다. Pt mesh 구조 및 전도성 glass 기판은 각각 상대전극 (counter electrode) 및 작업전극 (working electrode)으로 사용되었고 전해질 용액의 농도, 인가전압, 성장시간 등의 다양한 조건을 통하여 GaN 나노구조를 성장하고 분석하였다. 성장된 GaN 나노구조 및 형태는 field emission scanning electron microscopy (FE-SEM)를 이용하여 분석하였고, energy dispersive X-ray (EDX) 분석을 통하여 정량 및 정성적 분석을 수행하였다. 그리고 성장된 GaN 나노구조의 결정성을 조사하기 위해 X-ray diffraction (XRD)을 측정 및 분석하였다. 또한, photoluminescence (PL) 분석으로부터 GaN 나노구조의 광학적 특성을 분석하였다.

• Journal of the Korean Ceramic Society
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• v.44 no.1 s.296
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• pp.32-36
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• 2007

Zinc gallate $(ZnGa_2O_4)$ thin film phosphors have been formed on ITO glass substrates by a sol-gel spinning coating method. For the formation of the film phosphors, the starting materials of zinc acetate dihydrate, gallium nitrate hydrate and 2-methoxyethanol as a solution were used. The thin films deposited were firstly dried at $100^{\circ}C$ and fired at $500^{\circ}C\;or\;600^{\circ}C$ for 30 min and then, annealed $500^{\circ}C\;or\;600^{\circ}C$ at for 30 min under an annealing atmosphere of 3% $H_2/Ar$. The thin films deposited on ITO glass plates showed the (220), (222), (400), (422), (511), and (440) peaks of spinel structure as well as the (311) peak indicating a standard powder diffraction pattern. The surface morphologies of the thin film phosphors were observed with a firing and an annealing condition. The $ZnGa_2O_4$ film phosphors showed the blue emission spectra around 410 nm as well as the emission spectra in the UV region (360-380 nm).

• Korean Journal of Materials Research
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• v.17 no.5
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• pp.273-277
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• 2007

Vertically aligned Zinc Oxide rod arrays were grown by the self-assembly hydrothermal process on the GaN epitaxial layer which has a same lattice structure with ZnO. Zinc nitrate and DETA solutions are used in the hydrothermal process. The $(HfO_2)$ thin film was deposited on GaN and the patterning was made by the photolithography technique. The selective growth of ZnO rod was achieved with the patterned GaN substrate. The fabricated ZnO rods are single crystal, and have grown along hexagonal c-axis direction of (002) which is the same growth orientation of GaN epitaxial layer. The density and the size of ZnO rod can be controlled by the pattern. The optical property of ordered array of vertical ZnO rods will be discussed in the present work.

• Restorative Dentistry and Endodontics
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• v.44 no.3
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• pp.32.1-32.13
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• 2019

Calcium hydroxide (CH) is the gold-standard intracanal dressing for teeth subjected to traumatic avulsion. A common complication after the replantation of avulsed teeth is root resorption (RR). The current review was conducted to compare the effect of CH with that of other intracanal medications and filling materials on inflammatory RR and replacement RR (ankylosis) in replanted teeth. The PubMed and Scopus databases were searched through June 2018 using specific keywords related to the title of the present article. The materials that were compared to CH were in 2 categories: 1) mineral trioxide aggregate (MTA) and endodontic sealers as permanent filling materials for single-visit treatment, and 2) Ledermix, bisphosphonates, acetazolamide, indomethacin, gallium nitrate, and enamel matrix-derived protein (Emdogain) as intracanal medicaments for multiple-visit management of avulsed teeth prior to the final obturation. MTA can be used as a single-visit root filling material; however, there are limited data on its efficacy due to a lack of clinical trials. Ledermix and acetazolamide were comparable to CH in reducing RR. Emdogain seems to be an interesting material, but the data supporting its use as an intracanal medication remain very limited. The conclusions drawn in this study were limited by the insufficiency of clinical trials.