• Journal of Electrochemical Science and Technology
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• v.4 no.1
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• pp.1-18
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• 2013

Gallium is an important element in the production of a variety of compound semiconductors for optoelectronic devices. Gallium has a low melting point and is easily oxidized to give oxides of different compositions that depend on the conditions of solutions containing Ga. Gallium electrode reaction is highly irreversible in acidic media at the dropping mercury electrode. The passive film on a gallium surface is formed during anodic oxidation of gallium metal in alkaline media. Besides, some results in published reports have not been consistent and reproducible. An increase in the demand of intermetallic compounds and semiconductors containing gallium gives rise to studies on electrosynthesis of them and an increase of gallium concentration in the environment with various application of gallium causes the development of electroanalysis tools of Ga. It is required to understand the electrochemistry of Ga and to predict the electrochemical behavior of Ga to meet these needs. Any review papers related to the electrochemistry of gallium have not been published since 1978, when the review on the subject was published by Popova et al. In this study, the redox behavior, anodic oxidation, and electrodeposition of gallium, and trace determination of gallium by stripping voltammetries will be reviewed.

• Resources Recycling
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• v.23 no.6
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• pp.63-67
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• 2014

Gallium is an important material and is used by industry of oxide semi-conductor and LED chip. However, the most of the gallium-containing waste resources became outflow abroad and the most of which is imported from oversea by following technical problem and low circulation rate. In this research, the recovery of high purity Gallium metal from Gallium scrap, which containing about 30% of Gallium, was investigated by using hydro-metallurgical process. As pretreatment, the Gallium scrap was pulverized and leached by strong acid such as hydro chloric acid. At the leached solution, Indium was separated as an Indium sponge by substitution reaction and then Gallium and Zinc hydroxide separated and filtrated using strong alkaline solution such as sodium hydroxide by precipitation method. Also, Gallium metal and Zinc metal was recovered by electrowinning method. To make an electrolytic solution, Gallium and Zinc hydroxide was leached by strong alkaline solution. Finally, High purity Gallium metal was recovered by vacuum refining process to remove the Zinc impurity.

• Journal of the Korean Ceramic Society
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• v.40 no.11
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• pp.1058-1061
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• 2003

Gallium Nitride (GaN) powders were synthesized by calcining a gallium(III) sulfate salt in flowing ammonia in the temperature range 500-1100$^{\circ}C$. The process of conversion of the salt to GaN was monitored by X-Ray Diffraction (XRD). The salt decomposed to ${\gamma}$-Ga$_2$O$_3$ and then converted to GaN without ${\gamma}$-${\beta}$Ga$_2$O$_3$ phase transition. Variations in XRD patterns and weight loss of samples with temperature indicate that the conversion of ${\gamma}$-Ga$_2$O$_3$ to GaN does not proceed through Ga$_2$O but stepwise via amorphous gallium oxynitride (GaO$\_$x/N$\_$y/) as intermediates. Room-temperature photoluminescence spectra of GaN powders obtained showed the emission peak at 363 nm and no yellow band.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.10a
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• pp.351-354
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• 2002

The new enhanced method of temperature control need not any reference temperature, the system itself can find the melting temperature of gallium as a reference point by dithering input heat flux. If gallium is in melting state, the latent heat of fusion works, so gallium temperature does not change on dithering input heat flux. Also, the control method can determine the state of gallium; solid, liquid, or melting state by investigating the temperature in gallium. We apply this new temperature stabilization method to stabilize a Fabry-Perot cavity, which serves as a ultimate length measurement technique. We achieved 1 mK-temperature stability and 1.5426 nm/ 95 mm-length stability over 10 hours.

• Current Applied Physics
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• v.18 no.12
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• pp.1553-1557
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• 2018

Gallium nitride (GaN) nanoparticles are synthesized by the gallium particle trapping effect in a $N_2$ nonthermal plasma with metallic Ga vapor. A proposed method has an advantage of synthesized GaN nanoparticle purity because the gallium vapor from the inductively heated tungsten boat does not contain any impurity source. The synthesized particle size can be controlled by the amount of Ga vapor, which is adjusted using the plasma emission ratio of nitrogen to gallium, owing to the particle trapping effect. The synthesized nanoparticles are investigated by electron microscopy studies. High-resolution transmission electron microscopy (HRTEM) studies confirm that the synthesized GaN nanoparticles (10-40 nm) crystallize in a single-phase wurtzite structure. Room-temperature photoluminescence (PL) measurements indicate the band-edge emission of GaN at around 378 nm without yellow emission, which implies that the synthesized GaN nanoparticles have high crystallinity.

• Bulletin of the Korean Chemical Society
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• v.27 no.8
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• pp.1235-1238
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• 2006

• Radiation Oncology Journal
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• v.9 no.1
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• pp.81-85
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• 1991

The differentiation between post-radiotherapy lung fibrosis and tumor recurrence is often a dilemma to physicians. Twenty two patients with lung cancer who had received 45~60 Gy to the chest were chosen to study the possible role of gallium-67 scan. Seventeen squamous cell carcinomas were treated with only radiotherapy, 3 small cell carcinomas with combination chemotherapy, 2 adenocarcinomas with lobectomy. A total of 8 patients with pneumonitis with or without fibrosis and recurrence showed uptake of gallium at the site of inflammation. Of the 12 recurrences and residual diseases after radiotherapy, positive gallium uptake was present in 11 cases (92%). Of the 10 recurrence-free cases, all the 5 patients with pneumonitis revealed gallium accumulation. However, 4 of the 5 patients (80%) with recurrence-free fibrosis have not accumulated gallium in the fibrotic areas. Fibroses in S patients were developed after 8 months of completion of radiotherapy. These facts suggest that gallium-67 scan after 1 year post-treatment may aid for the discrimination of fibrosis from tumor recurrence unless pneumonitis is present.

• Journal of Dental Rehabilitation and Applied Science
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• v.19 no.4
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• pp.309-315
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• 2003

When the exposure surface of restoration is brushed with various toothpaste in the mouth, wear or undesirable surface deposit of restoration can occur. Surface change of gallium alloys according to brushing and toothpaste may directly affect oral hygiene. The aim of this study was to evaluate the surface alterations of Gallium alloys during tooth brushing with different prophylactic agents. Two gallium-alloys and an amalgam as a control were investigated. Without and with brushing were applied with three kinds of prophylactic agents on the sample for 0, 1, 5, 10, 60 and 360 minutes. At each time interval, surface roughness was recorded by a profilometer and some pictures were taken by a SEM. All results were analyzed by the one-way ANOVA, followed by Tukey multiple comparisons and the simple linear regression analysis. The results indicate that gallium alloys are more susceptible to surface degradation during tooth brushing than amalgam with respect to the specific prophylactic agent used.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.293.2-293.2
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• 2016

The In this paper, we have fabricated the solution processed In-Ga-ZnO thin film transistors (IGZO TFTs) by varying indium and gallium ratio. The indium ratio of IGZO TFTs was changed from 1 to 5 at fixed gallium and zinc oxide atomic percent of 1:1 and gallium ratio was varied from 1 to 5 at fixed indium and zinc oxide atomic percent of 1:1. When the indium ratio was increased at fixed gallium and zinc oxide ratio of 1:1, threshold voltage was negatively shifted from 1.03 to -6.18 V and also mobility was increased from 0.018 to $0.076cm2/V{\cdot}sec$. It means that the number of carriers in IGZO TFTs were increased due to great formation of the oxygen vacancies which generate electrons. In contrast, when the gallium ratio was increased in IGZO TFTs with indium and zinc oxide ration of 1:1, the on/off current ratio was increased from $1.88{\times}104$ to $2.22{\times}105$. It is because gallium have stronger chemical bonds with oxygen than that with the zinc and indium ions that lead to the decreased in electron concentration.

• Transactions of the Korean Society of Mechanical Engineers
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• v.16 no.1
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• pp.87-94
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• 1992

Film boiling heat transfer characteristics in liquid-liquid systems are studied experimentally. Liquid gallium as a heating liquid, n-pentane, freon-113, and ethanol are used as boiling liquids. In gallium-n-pentane and gallium-freon-113 systems the minimum film boiling point occurred at higher temperature than those observed in copper-boiling liquid systems. However MFB point occurred almost at the same temperature for the case of ethanol. This difference are due to the effects of contact angle and interfacial agitations in gallium-boiling liquid systems. Film boiling heat transfer rate, for the gallium-boiling liquid systems considered in this work, found to be approximately 10% higher than those in copper-boiling liquid systems, whose main cause is believed to be gallium-boiling liquid interfacial agitations affected by the density ratio between gallium and boiling liquid.