• Title/Summary/Keyword: gain-flatness

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Designing and Realizing the Ground Station Receiver Low Noise Amplifier of the Next-Generation Aeronautical Surveillance System (차세대 항공 감시시스템(ADS-BES) 지상국 수신기 저잡음 증폭기 설계 및 구현)

  • Cho, Ju-Yong;Yoon, Jun-Chul;Park, Chan-Sub;Park, Hyo-Dal;Kang, Suk-Youb
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.17 no.10
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    • pp.2273-2280
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    • 2013
  • This article introduces the next-generation air surveillance system and investigates how to design of front-end low noise amplifier of the ground station receiver. In consideration of the international standard documentation and the performance of existing products, the study conducts the link budget on the entire system so that it can be competitive in terms of receive sensitivity or reliability. To obtain a proper low noise amplifier, standards of design are decided so that such factors as gain, gain flatness, and reflective loss can be optimal. In its design, the bias circuit appropriate for the characteristics of low power, low noise, or high gain was built, and according to the results of the simulation conducted after the optimal design, its gain was 16.24dB, noise factor was 0.36dB, input-output reflective loss was -18dB and -28dB each, and frequency stability was 1.11. According to the results measured after the design, its gain was 17dB, noise factor was 0.51dB, gain flatness was 0.23dB, and input-output reflective loss was -18.28dB and -24.50dB each, so the results gained were suitable for building the overall system.

Design and Fabrication of Power Amplifiers for IMT-2000 (IMT-2000용 대전력 증폭기의 설계 및 제작)

  • 박천석;정성찬
    • Proceedings of the IEEK Conference
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    • 1999.11a
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    • pp.135-138
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    • 1999
  • In this paper, we designed each matching networks by given input and output impedances of power amplifiers. Mearsured results for IMD and gain flatness are -30㏈c and $\pm$0.2㏈ with 38㏈m output power PEP of PTE10119 at 2.10-2.20㎓ and are -30㏈c and $\pm$0.4㏈ with 42㏈m output power PEP of MRF284 at same frequency range.

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Design of LNB for Direct Broadcast Satellite Reception (위성수신용 LNB에 관한 연구)

  • 김현진;김용환;양성욱;김현국;민준기
    • Proceedings of the Korea Electromagnetic Engineering Society Conference
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    • 2001.11a
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    • pp.231-234
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    • 2001
  • 위성방송 수신을 위한 S-band용 LNB를 유전율3.48, 기판두께 0.762mm의 기판을 사용하여 NF=0.9 dB, 변환이득 56dB, Gain Flatness +0.7dB/27MHz을 만족하도록 설계하였으며 대역통과필터는 원하는 대역내에서 삽입손실 -2dB, 반사계수 -l2dB 이하의 결과를 얻었다. 발진기는 3.62GHz에서 6.17dBm의 출력을 나타내었으며 위상잡음은 중심주파수 3.62GHz의 100kHz offset 지점에서 -98 dBc/Hz의 특성을 얻었다.

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Design and characteristics of 10Gbps$\times$64 ch. wavelength multiplexed optical signal amplification unit with 1530~1560 nm and 1570~1600 nm gain band (1530~1560nm와 1570~1600nm의 이득 대역을 갖는 10Gbps$\times$64채널 파장 다중화된 광신호 증폭 유니트의 설계 및 특성 측정)

  • 이정찬;정희상;주무정;김광준;이종현
    • Korean Journal of Optics and Photonics
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    • v.12 no.3
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    • pp.200-204
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    • 2001
  • The structural design and the measured characteristics of optical signal amplification unit for 640 Gbps (10 Gbps$\times$64 ch.) WDM transmission systems are reported. The unit is composed of two sub gain block units for the amplification of C-band (1530-1560 nm) and L-band (1570-1600 nm), respectively. Programmable microprocessors monitor the states of operation and optimize the optical output conditions. Each sub gain block unit can maintain total optical output power of +21 dBm with gain flatness of < 1 dB and noise figure of <7.2 dB for the input power in the dynamic range from-5 to +1 dBm.+1 dBm.

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An Ultra Wideband Low Noise Amplifier in 0.18 μm RF CMOS Technology

  • Jung Ji-Hak;Yun Tae-Yeoul;Choi Jae-Hoon
    • Journal of electromagnetic engineering and science
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    • v.5 no.3
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    • pp.112-116
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    • 2005
  • This paper presents a broadband two-stage low noise amplifier(LNA) operating from 3 to 10 GHz, designed with 0.18 ${\mu}m$ RF CMOS technology, The cascode feedback topology and broadband matching technique are used to achieve broadband performance and input/output matching characteristics. The proposed UWB LNA results in the low noise figure(NF) of 3.4 dB, input/output return loss($S_{11}/S_{22}$) of lower than -10 dB, and power gain of 14.5 dB with gain flatness of $\pm$1 -dB within the required bandwidth. The input-referred third-order intercept point($IIP_3$) and the input-referred 1-dB compression point($P_{ldB}$) are -7 dBm and -17 dBm, respectively.

A 3~5 GHz UWB Up-Mixer Block Using 0.18-μm CMOS Technology

  • Kim, Chang-Wan
    • Journal of electromagnetic engineering and science
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    • v.8 no.3
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    • pp.91-95
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    • 2008
  • This paper presents a direct-conversion I/Q up-mixer block, which supports $3{\sim}5$ GHz ultra-wideband(UWB) applications. It consists of a VI converter, a double-balanced mixer, a RF amplifier, and a differential-to-single signal converter. To achieve wideband characteristics over $3{\sim}5$ GHz frequency range, the double-balanced mixer adopts a shunt-peaking load. The proposed RF amplifier can suppress unwanted common-mode input signals with high linearity. The proposed direct-conversion I/Q up-mixer block is implemented using $0.18-{\mu}m$ CMOS technology. The measured results for three channels show a power gain of $-2{\sim}-9$ dB with a gain flatness of 1dB, a maximum output power level of $-7{\sim}-14.5$ dBm, and a output return loss of more than - 8.8 dB. The current consumption of the fabricated chip is 25.2 mA from a 1.8 V power supply.

Design of Broad Band Amplifier Using Feedback Technique

  • Kang, Tae-Shin;Rhee, Jin-Koo
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.3 no.1
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    • pp.42-46
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    • 2003
  • In this paper, an MMIC broadband amplifier for wireless communication systems has been developed by using an active feedback method. This active feedback operates at much higher frequencies than a method by a spiral inductor feedback and its size is independent of the inductance value. The MMIC broadband amplifier was designed using a $0.5{\;}{\mutextrm{m}}$ MESFET library. The fabricated chip area was $1.4{\;}mm{\;}{\times}{\;}1.4{\;}mm. Measurement showed a gain of 18 dB with a gain flatness of ${\pm}3$ dB in a 1.5 GHz~3.5 GHz band. The maximum output power and the minimum noise figure were 14 dBm and 2.5 dB in the same band, respectively.

Broadband Amplifier Using Active Feedback Technique (Active Feeback를 이용한 MMIC 광대역 증폭기 설계)

  • Kang, T. S.;An, D.;Yoon, Y. S.;Rhee, J. K.
    • Proceedings of the Korea Electromagnetic Engineering Society Conference
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    • 2000.11a
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    • pp.197-201
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    • 2000
  • In this paper, a MMIC(Monolithic Microwave Integrated Circuit) broadband drive amplifier for wireless communication system has designed using active feedback method. The MMIC brodband amplifier was designed using 0.5$\mu\textrm{m}$ MESFET of ETRI library. Simulation results show that gain is 22 dB, and gain flatness ${\pm}$1 dB. Maximum output power 15 dBm and noise figure 2.5 dB in bandwidth 500 MHz ~3.0 GHz. The MMIC Broadband amplifer's chip area is 14mm${\times}$1.4mm.

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Signal Cancellation Characteristics of Cavity Delay Filter Module for LPA (LPA용 캐비티 지연 필터 모듈의 신호 상쇄 특성 연구)

  • 권영만;이기희;선태원;구경원
    • Proceedings of the Korea Electromagnetic Engineering Society Conference
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    • 2001.11a
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    • pp.243-246
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    • 2001
  • A cavity delay filter module for IMT-2000 LPA has been developed with 0.9dB insertion loss, 0.1dB/0.6$^{\circ}$ gain/phase flatness. Broadband signal cancellation of the module has been simulated using the measured S parameter, and gain, phase and group delay have been matched to satisfy the signal cancellation of the module. In the experiment, the value of designed parameters are used and 40dB signal cancellation has been obtained over 100MHz bandwidth. Also the sampling cancellation has been shown to be the similar performance of the feedforward output cancellation.

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Design of High-Power and High-Efficiency Broadband Amplifier for Jamming Using GaN HEMT (GaN HEMT를 이용한 Jamming용 고출력 고효율 광대역 증폭기 설계)

  • Kim, Tae-Hyung;Park, Jung-Hoon;Cho, Sam-Uel;Seo, Chul-Hun
    • Proceedings of the KAIS Fall Conference
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    • 2010.11a
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    • pp.172-175
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    • 2010
  • 본 논문에서는 GaN HEMT를 이용하여 Jamming용 System에 사용될 수 있는 고효율 및 고출력 특성을 가지는 광대역 Amplifier를 제작하였다. Jamming System에서 핵심이 되는 Amplifier는 넓은 범위의 주파수에서 통상적으로 사용되는 출력 신호에 비해 보다 높은 출력의 신호를 구현하는 것이 중요하다. 본 논문에서는 GaN HEMT에 안정적인 전원 공급을 위한 음 전원 Bias 제어 회로와 Sequence 회로 및 온도에 따른 Gain 보상 회로를 구현하였으며, 500~2500MHz의 광대역에서 동작하면서 50W 이상의 출력을 낼 수 있도록 설계하였다. 출력 전력이 향상과 안정적인 동작을 위해 Main 출력 단은 60Watt 급의 GaN HEMT 소자와 광대역 Coupler를 이용하여 Balanced Structure로 설계하였다. 제작된 광대역 Amplifier는 30V 단일 전원에서 동작하도록 설계되었고, 크기는 140*90mm이다. 동작주파수 대역(500~2500MHz)에서 Small Signal Gain 63dB와 Gain Flatness ${\pm}$2dB, -10dB 이하의 Input Return Loss를 가진다. CW(Continuous Wave) Signal을 이용하여 측정하였으며, 50Watt 이상의 Saturation Power에서 최대 45%, 최소 28% 정도의 효율 특성을 보였다.

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