• 제목/요약/키워드: gain saturation

검색결과 178건 처리시간 0.036초

Gate Leakage Current of Power GaAs MESFET's at High Temperature

  • Won Chang-sub;Ahn Hyungkeun;Han Deuk-Young
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2001년도 Proceedings ICPE 01 2001 International Conference on Power Electronics
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    • pp.44-46
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    • 2001
  • Increase of gate leakage current causes decrease of gain and increase of noise. In this paper, gate leakage current of GaAs MESEFTs' has been traced with different temperatures from $27^{\circ}C\;to\;350^{\circ}C$ to obtain the zero voltage saturation current $J_s$ which is critical to the temperature dependency of total current. From the results, thermal leakage current coefficient has been proposed to compensate for the total current due to the thermionic emission, tunneling, generation and/or hole injection.

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용액공정을 이용한 zinc tin oxide 박막 트렌지스터와 회로제작에 관한 연구 (Zinc tin oxide thin film transistors and simple circuits using a solution process)

  • 허재상;김영훈;박성규
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2011년도 제42회 하계학술대회
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    • pp.1477-1478
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    • 2011
  • Solution processed zinc tin oxide (ZTO) thin films were studied using a spin coating for the fabrication of thin film transistors and simple circuits. The solution processed thin film transistors (W/L = 100/10 ${\mu}m$) have the average saturation mobility of 1.9 $cm^2$/Vs, threshold voltage of 20 V, and subthreshold slope of 0.5 V/decade. The dc characteristics of an inverter with $W_{load}=100\;{\mu}m$ and $W_{drive}=10\;{\mu}m$, measured under votage supply of $V_{DD}$ = +50 V. The inverter beta ratio is 20 ($R=(W_{drived}/L_{drive})/(W_{load}/L_{load})=20$) and $gain_{max}$ is 2. The characteristics of an oscillator were measured under voltage supply of $V_{DD}$ = +60 V.

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반도체 광 증폭기내에서의 4광파 혼합을 이용한 2.5Gb/s 광신호의 전광 파장변환 (All-optical wavelength conversion of 2.5 Gb/s optical signals by four-wave mixing in a semiconductor optical amplifier)

  • 방준학;서완석;이성은
    • 전자공학회논문지D
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    • 제35D권8호
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    • pp.69-75
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    • 1998
  • We demonstrate wavelength conversion of 2.5Gb/s optical signals by four-wave mixing (FWM) in a semiconductor optical amplifier (SOA). We investigate the effect of input pump and signal powers on the coversion efficiency, optical signal-to-noise ratio (OSNR) and extinction ratio to be a measure of performance in a wavelength converter. As a result, we show that the maximum bit error rate (BER) performance can be obtained by co promising among high-vonversion efficiency (minimum Pprobe), high-OSNR (maximum Pprobe) and low-cross-gain saturation effects (Pprobe kept at least 6dB weaker than Ppump). In our experiment, we obtain optimum performance at +3 dBm pump power and -6dBm signal power. The power penalty incurred in the wavelength conversion can be minimized by careful selection of the input pump and signal powers. We show that about 0.5dB power penalty for 3.2nm wavelength coversion at 10-10 BER is achievable.

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광대역 음성에 대한 프레임내 잔차 벡터 양자화에 있어서 모델 복잡도와 성능 사이의 교환관계 (Trade-off between Model Complexity and Performance in Intra-frame Predictive Vector Quantization of Wideband Speech)

  • 송근배;한헌수
    • 로봇학회논문지
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    • 제5권1호
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    • pp.70-76
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    • 2010
  • This paper addresses a design issue of "model complexity and performance trade-off" in the application of bandwidth extension (BWE) methods to the intra-frame predictivevector quantization problem of wideband speech. It discusses model-based linear and non-linear prediction methods and presents a comparative study of them in terms of prediction gain. Through experimentation, the general trend of saturation in performance (with the increase in model complexity) is observed. However, specifically, it is also observed that there is no significant difference between HMM and GMM-based BWE functions.

발전용 보일러 시스템의 이상허용 및 과도상태의 유연한 제어에 관한 연구 (A Study on the Fault-Tolerant and Bumpless Switching Control for Boiler Systems in the Power Plant)

  • 권오규;이영삼
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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    • pp.1037-1040
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    • 1998
  • In this research a fault-tolerant and bumpless switching control is proposed for boiler systems used in the power plants. Firstly, three operating points are selected to control the nonlinear boiler through the full operational range, and the $H_{\infty}$ loop shaping controller and the model-based predictive controller(MBPC) are designed. To prevent the windup and bump problems which are caused by the actuator saturation and the controller switching, an anti-windup and bumpless transfer technique is adopted to the $H_{\infty}$ loop shaping controller. Also the constrained gain-scheduling technique is applied to MBPC to achieve the same objective. Secondly, the fault-tolerant control technique is proposed to continue the control action without stopping the boiler operation even in case of some faults. Through various simulation studies, the performances of the proposed control techniques are demonstrated.

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시간 지연 요소를 이용한 PI 제어기 자동 동조 알고리즘 (An Auto-tuning Algorithm of PI Controller Using Time Delay Element)

  • 오승록
    • 전자공학회논문지SC
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    • 제47권6호
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    • pp.1-5
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    • 2010
  • 본 논문에서는 PI 제어기를 설계해야 하는 경우인 임계 주파수 부근에서 이득 감소가 적은 시스템을 구별할 수 있는 알고리즘을 제안하였다. 임계 주파수 부근에서 이득감소가 적은 시스템을 구별하기 위해 시간 지연 요소를 이용하여 이득 감소율을 구하는 방법을 제안하였다. 또한 크기 마진과 위상 마진이 주어진 경우 PI 제어기를 설계하는 방법을 제안하였다. 제안된 알고리즘은 시간 지연요소와 포화함수를 이용하여 PI 제어가 가능한 한점의 좌표값을 계산하는 방법을 사용하였다. 제안된 방법은 시뮬레이션을 통해 타당성을 검증하였다.

전자선 묘화 장치를 이용한 비대칭적인 0.1 ${\mu}{\textrm}{m}$ $\Gamma$-게이트 PHEMT 공정 및 특성에 관한 연구 (A fabrication and characterization of asymmetric 0.1 ${\mu}{\textrm}{m}$ $\Gamma$-gate PHEMT device using electron beam lithography)

  • 임병옥;김성찬;김혜성;신동훈;이진구
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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    • pp.189-192
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    • 2001
  • We have studied fabrication processes that form asymmetric $\Gamma$-gate with a 0.1${\mu}{\textrm}{m}$ gate length in MMIC's(Monolithic Microwave Integrated Circuits). Asymmetric $\Gamma$-gate was fabricated using mixture of PMMA and MCB. Thus pseudomorphic high electron mobility transistor (PHEMT's) with 0.1${\mu}{\textrm}{m}$ gate length was fabricated via several steps such as mesa isolation, metalization, recess, passivation. PHEMT's has the -1.75 V of pinch-off voltage (Vp), 63 mA of drain saturation current(Idss and 363.6 mS/mm of maximum transconductance (Gm) in DC characteristics and current gain cut-off frequency of 106 GHz and maximum frequency of oscillation of 160 GHz in RF characteristics.

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추정된 절삭력 신호를 이용한 선삭력 제어

  • 허건수;김재옥
    • 한국정밀공학회지
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    • 제17권5호
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    • pp.173-179
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    • 2000
  • While a cutting tool is machining a workpiece at various cutting depth, the feedrate is usually selected based on the maximum depth of cut. Even if this selection can avoid power saturation or tool breakage, it is very conservative compared to the capacity of the machine tools and can reduce the productivity significantly. Many adaptive control techniques that can adjust the feedrate to maintain the constant cutting force have been reported. However, these controllers are not very widely used in manufacturing industry because of the limitations in measuring the cutting force signals. In this paper, turning force control systems based on the estimated cutting force signals are proposed. A synthesized cutting force monitor is introduced to estimate the cutting force as accurately as a dynamometer does. Three control strategies of PI, adaptive and fuzzy logic controllers are applied to investigate the feasibility of utilizing the estimated cutting force fur turning force control. The experimental results demonstrate that the proposed systems can be easily realized in CNC lathe with requiring little additional hardware.

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Current Saturation Improvement of Poly-Si TFTs for Analog Circuit Integration

  • Nam, Woo-Jin;Han, Sang-Myeon;Lee, Hye-Jin;Han, Min-Koo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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    • pp.289-292
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    • 2005
  • New poly-Si TFTs have been proposed and fabricated in order to increases the output channel resistance ($r_o$). The counter-doped($p^+$) source is tied to the $n^+$ source and is extended into the channel region so that it employs the reverse bias depletion in the channel. As $V_{DS}$ is increased, the depletion width is increased and the effective channel width is reduced. Therefore, the output current saturates well and the $r_o$ is increased successfully. The proposed CMOS devices may improve the amplifier gain of data driver in active-matrix displays

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A Multi-Stage CMOS Charge Pump for Low-Voltage Memories

  • Lim, Gyu-Ho;Yoo, Sung-Han;Kim, Young-Hee
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2002년도 춘계종합학술대회
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    • pp.283-287
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    • 2002
  • To remedy both the degradation and saturation of the output voltages in the modified Dickson pump. a new multi-stage charge pump circuit is presented in this paper. Here using PMOS charge-transfer switches instead of NMOS ones eliminates the necessity of diode-configured output stage in the modified-Dickson pump, achieving the improved voltage pumping gain and its output voltages proportional to the stage numbers. Measurement indicates that VOUT/3VDD of this new pump circuit with two stages reaches to a value as high as 0.94 even with low VDD=1.0 V, strongly addressing that this scheme is very favorable at low-voltage memory applications.

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