• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.519-523
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• 1995

The Fe-TM-C-N nanocrystalline films (TM : Hf, Zr and Nb) are investigated to examine the relation between microstructure and soft magnetic properties. In these films, as the atomic radius of TM element increases, $P_{N2}$ which was added to get good soft magnetic properties was decreased and the maximum value of the permeability shifted to the high Fe range in the composition diagram. The best soft magnetic properties achieved in these films are : Hc of 0.15 Oe, $\mu_{eff}$ of 7800 (1MHz) and $4{\pi}M_{s}$ of 17.5 kG in Fe-Hf-C-N film ; Hc of 0.06 Oe, $\mu_{eff}$ of 2750 (1MHz) and $4{\pi}M_{s}$ of 16.8 kG in Fe-Zr-C-N film and Hc of 0.31 Oe; $\mu_{eff}$ of 2100 (1MHz) and $4{\pi}M_{s}$ of 15.5 kG in Fe-Nb-C-N film. It was considered that the stronger the bonding force between TM and C(N), the finer TM(C,N) phase is precipitated and therefore, the finer $\alpha$-Fe grains are formed. The effective permeability of the Fe-Zr-C-N films and Fe-Nb-C-N films remains nearly constant up to 10 MHz.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.41 no.9
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• pp.1001-1009
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• 2016

In LTE networks, the base station transmits control information over the physical downlink control channel (PDCCH) including scheduling grants, which are used to indicate the resources that the user equipment uses to send data to the base station. Because the size of the PDCCH message and the number of the PDCCH transmissions increase in proportion to the number of user equipments, the overhead of the PDCCH may cause serious network congestion problems in the narrowband LTE (NB-LTE) system. This paper proposes the compact PDCCH information bit allocation to reduce the size of the PDCCH message and evaluates the performance of the semi-persistent scheduling (SPS) in the NB-LTE system. The simulation results show that the SPS can significantly reduce the signaling overhead of the PDCCH and therefore increase the system utilization.

• Nuclear Engineering and Technology
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• v.26 no.4
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• pp.484-492
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• 1994

Microstructures of Nb$_2$O$_{5}$-doped UO$_2$ pellets have been investigated during sintering under H$_2$ and $CO_2$ atmospheres. Pellets are sintered at 1$700^{\circ}C$ in H$_2$ atmosphere and at 130$0^{\circ}C$ in $CO_2$ atmosphere for 1 to 41 hr. The addison of Nb$_2$O$_{5}$ causes the formation of large pores, which shrink to some extent in H$_2$ atmosphere but very little in $CO_2$. Fine pores in the Nb$_2$O$_{5}$-doped UO$_2$ pellet are almost annihilated when sintered under H$_2$ atmosphere but little changed under $CO_2$ atmosphere. The increase in grain size due to Nb$_2$O$_{5}$ addition is much larger in H$_2$ atmosphere than in $CO_2$. Thus the enhancement of uranium diffusion in UO$_2$ due to the Nb$_2$O$_{5}$ addition is thought to be more significant in H$_2$ atmosphere. Microstructures of Nb$_2$O$_{5}$-doped UO$_2$ pellets sintered in H$_2$ atmosphere are discussed from the viewpoint of in-reactor performance. Possible defects formation due to Nb$_2$O$_{5}$ addition is discussed to explain the enhancement of uranium diffusion in H$_2$ and $CO_2$ atmospheres.> atmospheres.

• Progress in Superconductivity
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• v.13 no.2
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• pp.111-116
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• 2011

Since superconducting wires have no resistance, electromagnets based on the superconducting wires produce no resistive heating with DC current as long as the current does not exceed the critical current of the wire. However, unlike resistive wires, superconducting wires exhibit AC heat loss. Embedding fine superconducting filaments inside copper matrix can reduce this AC loss to an acceptable level and opens the way to AC-capable superconducting coils. Here, we introduce an easy and accurate method to measure AC heat loss from sample superconducting coils by measuring changes in the rate of gas helium outflow from the liquid helium dewar in which the sample coil is placed. This method provides accurate information on total heat loss of a superconducting coil without any size limit, as long as the coil can fit inside the liquid helium dewar. With this method, we have evaluated AC heat loss of two superconducting solenoids, a 180-turn solid NbTi wire with 0.127 mm diameter (NbTi coil) and a 100-turn filamented wire with 1.4 mm diameter where 7 NbTi filaments were embedded in a copper matrix with copper to NbTi ratio of 6.7:1 (NbTi-Cu coil). Both coils were wound on 15 mm-diameter G-10 epoxy tubes. The AC heat losses of the NbTi and NbTi-Cu coils were evaluated as $53{\pm}4.7\;{\mu}W/A^2Hzcm^3$ and $0.67{\pm}0.16\;{\mu}W/A^2Hzcm^3$, respectively.

• Bulletin of the Korean Chemical Society
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• v.35 no.4
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• pp.1182-1190
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• 2014

$Cd_{1-x}Zn_xS$-sensitized $K_4Nb_6O_{17}$ composite photocatalysts (designated $Cd_{1-x}Zn_xS/K_4Nb_6O_{17}$) were prepared via a simple deposition-precipitation method. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectrometry (EDS), $N_2$ sorption, ultraviolet-visible light diffuse reflectance spectroscopy (UV-Vis DRS), photoluminescence measurements (PL), and X-ray photoelectron spectroscopy (XPS). The $Cd_{0.8}Zn_{0.2}S$ particles were scattered on the surface of $K_4Nb_6O_{17}$, and had a relatively uniform size distribution around 50 nm. The absorption edge of $K_4Nb_6O_{17}$ was shifted to the visible light region and the recombination of photo-generated electrons and holes suppressed after $Cd_{0.8}Zn_{0.2}S$ loading. The $Cd_{0.8}Zn_{0.2}S$(25 wt %)/$K_4Nb_6O_{17}$ composite possessed the highest photocatalytic activity for hydrogen production under visible light irradiation, evolving 8.278 mmol/g in 3 h. Recyclability tests were performed, and the composite photocatalysts were found to be fairly stable. The mechanism of charge separation between the photogenerated electrons and holes at the $Cd_{0.8}Zn_{0.2}S/K_4Nb_6O_{17}$ composite was discussed.

• Journal of the Korean Ceramic Society
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• v.40 no.11
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• pp.1078-1084
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• 2003

In order to develop a new type of nonlinear optical materials or photocatlaysts, Na$_2$O-Nb$_2$ $O_{5}$-Te $O_2$ glasses were prepared using conventional melt quenching method, and the crystallization behaviors and optical properties of these glasses was investigated. The optical and physical properties for Na$_2$O-Nb$_2$ $O_{5}$-Te $O_2$ glasses are: refractive index, n=2.04$\pm$0.04; density, p (g/㎤)=4.87$\pm$0.58; optical energy band of the transmission cut-off wavelength, E$_{0}$ (eV)=3.14$\pm$0.04. The transparent glass ceramics consisting of the nanocrysatls were obtained when the Na$_2$O-Nb$_2$ $O_{5}$-Te $O_2$ glass was first heat-treated at 3$50^{\circ}C$ for 1 h and than at 40$0^{\circ}C$ for 1 h. A cubic crystalline phase consisting of the nano-crysatls transforms into a stable phase at temperature above 47$0^{\circ}C$ for 1 h.

• Electrical & Electronic Materials
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• v.6 no.2
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• pp.122-128
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• 1993

본 연구에서는 0.45Pb(Fe$_{1}$2/Nb$_{1}$2/)O$_{3}$- (0.55-xPb(Fe$_{2}$3/W$_{1}$3/)O$_{3}$ (x=0.20, 0.25, 0.30) 세라믹을 950~990[.deg.C]에서 2시간 유지시켜 일반소성법으로 제작하였다. 제작된 시편에 대해 적층 세라믹 캐패시터로의 응용가능성을 고찰하기 위해 조성비와 소결온도에 따른 구조적, 유전적 특성을 조사하였다. PMN의 첨가량이 증가할수록 결정립 크기는 감소하였으며 상전이 온도는 증가하였다. 소결밀도는 970[.deg.C]에서 소결된 0.45PFN-0.30PFW-0.25PMN 시편에서 7.86[g/cm$_{3}$]의 최대값을 나타내었다. 유전상수는 990[.deg.C]에서 소결된 0.45PFN-0.25PFW-0.30PMN 시편에서 20,751의 최대값을 나타내었으며 유전손실은 모든 조성에서 5[%]이상을 나타내었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.443-446
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• 2001

MI(Magneto-Impedance) sensor which is made by thin films has significantly high detecting sensitivity in weak magnetic field. It also has a merit to be able to build in low power system. Its structure is simple, which makes it easier to prepare a miniature. In this study, its magnetic permeability and anisotropy field(H$\sub$k/) as a function of a thickness of sputtered amorphous CoZrNb thin film with high saturation magnetostriction and excellent soft magnetic property are investigated. In order to make a uniaxial anisotropy, thin film was subjected to post annealing with a static magnetic field with 1KOe intensity at 250, 300, and 320$^{\circ}C$ for 2 hour. Anisotropy field(H$\sub$k/)of thin film is measured by using MH loop tracer. Its magnetic permeability of thin film is measured over the frequency range from 1 MHz to 750MHz. It has shown that the magnetic permeability of amorphous CoZrNb thin film is decreased due to the skin effect with increasing a thickness of CoZrNb thin film, and hence its driving frequency is lowered.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.10
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• pp.901-905
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• 2008

In this study, $0.95(K_{0.5}Na_{0.5})NbO_{3}-0.05Li(Sb_{0.8}Nb_{0.2})O_{3}+0.2\;wt%Ag_{2}O$ were investigated as a variations of sintering times in order to improve dielectric and piezoelectric properties of lead-free piezoelectric ceramics. $Ag_{2}O$ were used as sintering aids and the specimens were sintered during 3, 5, 7, 9 and 11 hours, respectively. At the specimen sintered during 7 hour, Electromechanical coupling factor ($k_p$), density, dielectric constant (${\epsilon}_{\gamma}$), piezoelectric constant ($d_{33}$) and curie temperature ($T_c$) of composition ceramics showed the optimal value of 0.450, 4.274 $[g/cm^3]$, 1007, 257 [pC/N] and $396^{\circ}C$, respectively.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.57 no.2
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• pp.135-139
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• 2008

MFISFETs with platinum electrode on the $LiNbO_3$/aluminum nitride/Si(100) structures were successfully fabricated and the properties of the FETs have been discussed. $I_D-V_G$ characteristics of MFISFETs for linear region (that is, 0.1 V of the drain voltage) showed hysteresis loop with a counter-clockwise trace due to the ferroelectric nature of $LiNbO_3$ films. A memory window (i.e., threshold voltage shift) of the fabricated device was about 2[V] for a sweep from -4 to +4[V]. The estimated field-effect electron mobility and transconductance on a linear region were 530[$cm^2/V{\cdot}s$] and 0.16[mS/mm], respectively. The drain current of 27[${\mu}A$] on the "on" state was more than 3 orders of magnitude larger than that of 30[nA] on the "off" state at the same "read" gate voltage of l.5[V], which means the memory operation of the MFISFET.