• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.1
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• pp.179-184
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• 1995

Phosphorous was deped in silicon thin films by Ion Mass Doping and Changes in the electrical resistance with respect tko heat treatments were investigated. SOI(Silicon On Insulator) thin films which contain few grain boundaries prepared by ZMR(Zone Melting Recrystallization) of polysilicon films, polysilicon films which have about 1500 $A^{\rarw}$ of grain size prepared by LPCVD at 625.deg. C, and amorphous silicon thin films prepared by LPCVD at low temperature were used as substrates and thermal behavior of phosphorous after RTA(Rapid Thermal Annealing) and furnace annealing was carefully studied. Amorphous thin films showed about 10$^{6}$ .OMEGA./ㅁbefore any heat treatment, while polycrystalline and SOI films about 10$^{3}$.OMEGA./¤. All these films, however, showed about 10.OMEGA./ㅁafter furnace annealing at 700.deg. C for 3hrs and RTA showed about the same trend. Films with grain boundaries showed a certain range of heat treatment which rendered increase of the electrical resistance upon annealing, which could not be observed in amorphous films and segregation of doped phosphorous by diffusion with annealing was thought to be responsible for this abnormal behavior.

• Korean Journal of Materials Research
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• v.18 no.10
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• pp.552-556
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• 2008

Modified thermal annealing was applied to the activation of the polycrystalline silicon films doped as p-type through implantation of $B_2H_6$. The statistical design of experiments was successfully employed to investigate the effect of rapid thermal annealing on activation of polycrystalline Si doped as p-type. In this design, the input variables are furnace temperature, power of halogen lamps, and alternating magnetic field. The degree of ion activation was evaluated as a function of processing variables, using Hall effect measurements and Raman spectroscopy. The main effects were estimated to be furnace temperature and RTA power in increasing conductivity, explained by recrystallization of doped ions and change of an amorphous Si into a crystalline Si lattice. The ion activation using rapid thermal annealing is proven to be a highly efficient process in low temperature polycrystalline Si technology.

• 대한공업교육학회지
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• v.33 no.1
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• pp.249-264
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• 2008

In this dissertation, shallow $p^+-n$ junctions were formed by ion implantation and dual-step annealing processes and a new simulator is designed to model boron diffusion in silicon. This simulator predicts the boron distribution after ion implantation and annealing. The dopant implantation was performed into the crystalline substrates using $BF_2$ ions. The annealing was performed with a RTA(Rapid Thermal Annealing) and a FA(Furnace Annealing) process. The model which is used in this simulator takes into account nonequilibrium diffusion, reactions of point defects, and defect-dopant pairs considering their charge states, and the dopant inactivation by introducing a boron clustering reaction. FA+RTA annealing sequence exhibited better junction characteristics than RTA+FA thermal cycle from the viewpoint of sheet resistance and the simulator reproduced experimental data successfully. Therefore, proposed diffusion simulator and FA+RTA annealing method was able to applied to shallow junction formation for thermal budget. process.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.2
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• pp.249-254
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• 2015

Solution-derived amorphous indium-gallium-zinc oxide (a-IGZO) thin-film-transistor (TFTs) were developed using a microwave irradiation treatment at low process temperature below $300^{\circ}C$. Compared to conventional furnace-annealing, the a-IGZO TFTs annealed by microwave irradiation exhibited better electrical characteristics in terms of field effect mobility, SS, and on/off current ratio, although the annealing temperature of microwave irradiation is much lower than that of furnace annealing. The microwave irradiated TFTs showed a smaller $V_{th}$ shift under the positive gate bias stress (PGBS) and negative gate bias stress (NGBS) tests owing to a lower ratio of oxygen vacancies, surface absorbed oxygen molecules, and reduced interface trapping in a-IGZO. Therefore, microwave irradiation is very promising to low-temperature process.

• Proceedings of the KIEE Conference
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• 2015.07a
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• pp.1151-1152
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• 2015

Silicon zinc oxide (SZO) thin films were deposited via co-sputtering. Two kinds of post-treatment, furnace annealing and hot pressing, were carried out on the deposited SZO films. The effects of the post-treatment on the chemical bond and surface roughness of the deposited SZO films were analyzed as functions of the post-treatment conditions that were used. It was observed from the X-ray photoelectron spectroscopy (XPS) results that the amount of Si-O bonds in the SZO film drastically increased after the low-temperature furnace annealing. The experiment results showed that the hot pressing method would be favorable as it could improve the electrical characteristics of the SZO-TFTs.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1136-1139
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• 2009

Recently, various Ni doping systems and thermal annealing systems have been developed for fabrication of polycrystalline silicon film using SGS (super grain silicon) for medium and largesize AMOLED panels. In this study, we compare the potential of Ni doping systems including ALD (atomic layer deposition), AMD (atmospheric metal deposition), in-line sputter, and crystallization annealing systems including batch type furnace, inline furnace, and RTA (rapid thermal annealing) developed for the SGS method. Additional requirements for those systems to be used for mass production of large AMOLED TVs are suggested based on evaluation results for both poly-Si films and TFT backplanes.

• Journal of Advanced Marine Engineering and Technology
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• v.18 no.1
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• pp.114-122
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• 1994

A cold temperature control system for the BAF(batch annealing furnace) has been established in order to reduce energy consumption to imrpove productivity and stabilize the properties of products. Therefore we confirmed a relation between annealing cycle time and atmospheric gas, changing annealing cycle time according to BAF temperature with time during heating and actual temperature measurements cold spot during soaking. The results of the temperature variation effect on the batch annealing are as follows. 1) Cooling rate is increasing gradually with increasing atmospheric gas flow, but heating rate is hardly increasing without atmospheric gas component. Heating time is reduced to one half with increasing atmospheric gas flow rate and changing of atmospheric gas component from HNx to Ax gas and annealing cycle time is reduce to 2.7 times. 2) With enlarging the difference between furnace temperature and soaking temperature at the HNx BAF, heating time becomes short, but cooling time is indifferent. 3) If temperature difference of 300.deg. C in the temperature change of cold spot according to the annealing cycle control temperature, Hi-CON/H2BAF is interchanging at each other at 26hours, but HNxBAF at 50 hours. 4) Soaking time at batch annealing cycle determination is made a decision by the input coil width, and soaking time for quality homogenization of 1219 mm width coil must be 2.5 hours longer then that of 914mm width coil for the same coil weight at Hi-CON/H2BAF. But, it is necessary to make 2 hours longer at HNxBAF.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.10
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• pp.859-864
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• 2003

We prepared SOI(silicon-on-insulator) wafer pairs of Si II SiO$_2$/Si$_3$N$_4$ II Si using wafer direct bonding with an electric furnace annealing(EFA), a fast linear annealing(FLA), and a rapid thermal annealing(RTA), respectively, by varying the annealing temperatures at a given annealing process. We measured the bonding area and the bonding strength with processes. EFA and FLA showed almost identical bonding area and theoretical bonding strength at the elevated temperature. RTA was not bonded at all due to warpage, We report that FLA process was superior to other annealing processes in aspects of surface temperature, annealing time, and bonding strength.

• Current Optics and Photonics
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• v.3 no.2
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• pp.135-142
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• 2019

We report the precipitation of ZnO nanocrystals, Ag-clusters, and Ag nanoparticles in Ag/Er/Yb doped borate glasses by furnace annealing and $CO_2$ laser annealing. The XRD analysis revealed the precipitation of ZnO and Ag phases. The absorption spectra, the TEM and energy dispersive spectroscopy (EDS) revealed the incorporation of Er and Yb ions into ZnO nanocrystals formed by a laser technique and showed the surface plasmon band of Ag nanoparticles. The down-converted blue emission intensity of $Er^{3+}$ ions obtained under 365 nm excitation was enhanced by more than a hundred times in the glass treated by furnace annealing, mainly due to the energy transfer from Ag-clusters. Moreover, we discussed the contribution of Ag nanoparticles and defects to emission characteristics in the glasses treated by two annealing techniques. Up-conversion emissions of the $Er^{3+}$ ions under 980 nm excitation were enhanced due to the incorporation of $Er^{3+}$ and $Yb^{3+}$ ions into ZnO nanocrystals after thermal treatments.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.117-117
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• 2003