• Journal of the Korea Institute of Building Construction
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• v.16 no.6
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• pp.571-578
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• 2016

Recently, review on viability of various industrial by product and natural materials as raw material for concrete has been actively done in aspect of environment-friendly issue and depletion of natural resource. This study conducted fundamental study on the possibility of utilizing mud flat as admixture and filling material for concrete. First, chemical analysis on the viability of mud flat as admixture was done and the researchers compared it with the substance of fly ash and blast furnace slag. According to the result, substance content was proven to be inadequate. In addition, as the replacement rate of mud flat increased, compressive strength and tensile strength decreased. According to the estimated result of chemical substance analysis, possibility of utilizing mud flat as admixture was low. According to the result of experiment done as filling material, 10% ~ 30% replacement rate of mud flat manifested more than 8 Mpa of compressive strength of block which may be utilized for secondary product. However, additional experiment such as making block is required afterward. According to the result of flow experiment, as the replacement rate of mud flat increased, flow value decreased, and through chloride content analysis test, it was proven that mud flat is inappropriate to be applied as steel beam using structure since it has high content of sodium. It may be utilized as products that does not use steel beam such as internal brick.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.923-932
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• 2002

A stoichiometric mixture of evaporating materials for CdIn$\_$2/S$\_$4/ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CdIn$\_$2/S$\_$4/ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by hot wall epitaxy(HWE) system. The source and substrate temperatures were 630 $\^{C}$ and 420 $\^{C}$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of CdIn$\_$2/S$\_$4/ single crystal thin films measured from Hall effect by van der Pauw method are 9.01$\times$10$\^$16/ cm$\^$-3/ and 219 ㎠/V$.$s at 293 K, respectively. From the optical absorption measurement, the temperature dependence of energy band gap on CdIn$\_$2/S$\_$4/ single crystal thin films was found to be Eg(T) ＝ 2.7116 eV - (7.74 $\times$ 10$\^$-4/ eV) T$\^$2//(T＋434). After the as-grown CdIn$\_$2/S$\_$4/ single crystal thin films was annealed in Cd-, S-, and In-atmospheres, the origin of point defects of CdIn$\_$2/S$\_$4/ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of V$\_$cd/, V$\_$s/, Cd$\_$int/ and S$\_$int/ obtained by PL measurements were classified as donors or accepters type. And we concluded that the heat-treatment in the S-atmosphere converted CdIn$\_$2/S$\_$4/ single crystal thin films to an optical p-type. Also, we confirmed that In in CdIn$\_$2/S$\_$4/GaAs did not from the native defects because In in CdIn$\_$2/S$\_$4/ single crystal thin films existed in the form of stable bonds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.175-178
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• 2004

The stochiometric mixture of evaporating materials for the $ZnIn_2S_4$ single crystal thin film was prepared from horizontal furnace. To obtain the $ZnIn_2S_4$ single crystal thin film, $ZnIn_2S_4$ mixed crystal was deposited on throughly etched semi-insulating GaAs(100) in the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were $610^{\circ}C$ and $450^{\circ}C$, respectively and the growth rate of the $ZnIn_2S_4$ sing1e crystal thin film was about $0.5\;{\mu}m/hr$. The crystalline structure of $ZnIn_2S_4$ single crystal thin film was investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of $ZnIn_2S_4$ single crystal thin film measured from Hall effect by van der Pauw method are $8.51{\times}10^{17}\;cm^{-3}$, $291\;cm^2/V{\cdot}s$ at $293_{\circ}\;K$, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the $ZnIn_2S_4$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}S_O$ and the crystal field splitting ${\Delta}Cr$ were 0.0148 eV and 0.1678 eV at $10_{\circ}\; K$, respectively. From the photoluminescence measurement of $ZnIn_2S_4$ single crystal thin film, we observed free excition $(E_X)$ typically observed only in high quality crystal and neutral donor bound exciton $(D^{o},X)$ having very strong peak intensity The full width at half maximum and binding energy of neutral donor bound excition were 9 meV and 26 meV, respectively, The activation energy of impurity measured by Haynes rule was 130 meV.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.10
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• pp.829-838
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• 2007

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD).The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}\;cm^{-3},\;345\;cm^2/V{\cdot}s$ at 293 K. respectively. The temperature dependence of the energy band gap of the $CdGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $Eg(T)\;=\;2.6400\;eV\;-\;(7.721{\times}10^{-4}\;eV/K)T^2/(T+399\;K)$. After the as-grown single crystal $CdGa_2Se_4$ thin films were annealed in Cd-, Se-, and Ga -atmospheres, the origin of point defects of single crystal $CdGa_2Se_4$ thin films has been investigated by PL at 10 K. The native defects of $V_{Cd}$, $V_{Se}$, $Cd_{int}$, and $Se_{int}$ obtained by PL measurements were classified as donors or accepters. We concluded that the heat-treatment in the Cd-atmosphere converted single crystal $CdGa_2Se_4$ thin films to an optical p-type. Also, we confirmed that Ga in $CdGa_2Se_4/GaAs$ did not form the native defects because Ga in single crystal $CdGa_2Se_4$ thin films existed in the form of stable bonds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.11-11
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• 2010

Thin-film-transistors (TFTs) that can be deposited at low temperature have recently attracted lots of applications such as sensors, solar cell and displays, because of the great flexible electronics and transparent. Transparent and flexible transistors are being required that high mobility and large-area uniformity at low temperature [1]. But, unfortunately most of TFT structures are used to be $SiO_2$ as gate dielectric layer. The $SiO_2$ has disadvantaged that it is required to high driving voltage to achieve the same operating efficiency compared with other high-k materials and its thickness is thicker than high-k materials [2]. To solve this problem, we find lots of high-k materials as $HfO_2$, $ZrO_2$, $SiN_x$, $TiO_2$, $Al_2O_3$. Among the High-k materials, $Al_2O_3$ is one of the outstanding materials due to its properties are high dielectric constant ( ~9 ), relatively low leakage current, wide bandgap ( 8.7 eV ) and good device stability. For the realization of flexible displays, all processes should be performed at very low temperatures, but low temperature $Al_2O_3$ grown by sputtering showed deteriorated electrical performance. Further decrease in growth temperature induces a high density of charge traps in the gate oxide/channel. This study investigated the effect of growth temperatures of ALD grown $Al_2O_3$ layers on the TFT device performance. The ALD deposition showed high conformal and defect-free dielectric layers at low temperature compared with other deposition equipments [2]. After ITO was wet-chemically etched with HCl : $HNO_3$ = 3:1, $Al_2O_3$ layer was deposited by ALD at various growth temperatures or lift-off process. Amorphous InGaZnO channel layers were deposited by rf magnetron sputtering at a working pressure of 3 mTorr and $O_2$/Ar (1/29 sccm). The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. The TFT devices were heat-treated in a furnace at $300^{\circ}C$ and nitrogen atmosphere for 1 hour by rapid thermal treatment. The electrical properties of the oxide TFTs were measured using semiconductor parameter analyzer (4145B), and LCR meter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.122-122
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• 2008

Recently, Metal/Alumina/Silicon-Nitride/Silicon-Oxide/Silicon (MANOS) structures are one of the most attractive candidates to realize vertical scaling of high-density NAND flash memory [1]. However, as ANO layers are miniaturized, negative and positive bias temperature instability (NBTI/PBTI), such as the flat band voltage shift, ${\Delta}V_{FB}$, the interfacial trap density increase, ${\Delta}D_{it}$, the gate leakage current, ${\Delta}I_G$. and the retention characteristics, in MONOS capacitors, becomes an important issue in terms of reliability. It is well known that tunnel oxide degradation is a result of the oxide and interfacial traps generation during FN (Fowler-Nordheim) stress [2]. Because the bias temperature stress causes an increase of both interfacial-traps and fixed oxide charge could be a factor, witch can degrade device reliability during the program and erase operation. However, few studies on NBTI/PBTI have been conducted on improving the reliability of MONOS devices. In this work, we investigate the effect of post-annealing gas on bias temperature instability (BTI), such as the flat band voltage shift, ${\Delta}V_{FB}$, the interfacial trap density shift, ${\Delta}I_G$ retention characteristics, and the gate leakage current characteristics of MANOS capacitors. MANOS samples annealed at $950^{\circ}C$ for 30 s by a rapid thermal process were treated via additional annealing in a furnace, using annealing gases $N_2$ and $N_2-H_2$ (2 % hydrogen and 98 % nitrogen mixture gases) at $450^{\circ}C$ for 30 min. MANOS samples annealed in $N_2-H_2$ ambient had the lowest flat band voltage shift, ${\Delta}V_{FB}$ = 1.09/0.63 V at the program/erase state, and the good retention characteristics, 123/84 mV/decade at the program/erase state more than the sample annealed at $N_2$ ambient.

• Journal of the Korean Institute of Gas
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• v.2 no.4
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• pp.60-66
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• 1998

The hot stove system is a process that is continuously and constantly generating the hot combustion air required for the blast furnace. The hot stove process is considered as a main energy consumption process because it consumes about $20\%$ of the total energy in steel making works. So, many researchers have interested in the improvement of the heat efficiency of the hot stove to reduce the energy consumption. But they have difficulties in improving the heat efficiency of the hot stove because there is no precise information on heat transformation occurring during the heating period. In order to model the relationship between the operating conditions and heat efficiencies, we propose a neural network using feature extraction as one of experimental modeling methods. In order to show the performance of the model, we compare it with Partial Least Square (PLS) method. Both methods have similarities in using the dimension reduction technique. And then we present the simulation results on the prediction of the heat efficiency of the hot stove.

• Journal of the Korea Concrete Institute
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• v.15 no.6
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• pp.785-793
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• 2003

This study is intended to analyze the effectiveness of expansive additive, shrinkage reducing agent and combination of the two to reduce the autogenous and drying shrinkage of high performance concrete using mineral admixture such as fly ash, blast furnace slag powder and silica fume. According to results, when expansive additive and shrinkage reducing agent are mixed within an appropriate mixing ratio, fluidity and air content are not influenced, and the enhancement of compressive strength is favorable at the age of 91 and 180days. At the mixing ratio of expansive additive of 5% and 10%, the autogenous and drying shrinkage is reduced by 32∼68% and 25∼49% respectively in comparison with plain concrete. And they are reduced by 18∼34% and 16∼26% respectively at the mixing ratio of shrinkage reducing agent of 0.5% and 1.0%, compared with plain concrete. The mixture of EA-SR combined with expansive additive and shrinkage reducing agent is most effective for reduction of shrinkage. Therefore, it is considered that the using method in combination with expansive additive and shrinkage reducing agent is effective to reduce the shrinkage of high performance concrete using mineral admixture such as fly ash, blast slag powder and silica fume.

• Journal of the Korea Concrete Institute
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• v.16 no.2 s.80
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• pp.147-154
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• 2004

It is the aim of this study to propose the fundamental data for the establishment of the application and qualify standard of the mixed type superplasticizer after investigating and comparing the fluidity of high flowing concrete according to the component ratio of superplasticizer such as naphthalene sulfonated and melamine sulfonated. The results of this study were shown as the followings; 1) The fluidity and adsorption ratio of cement-paste were improved according to the increasing of naphthalene sulfonated component ratio, and apparent viscosity of cement-paste was improved according to the Increasing of melamine sulfonated component ratio. 2) In case of using the granulated blast-furnace slag, the fluidity of cement-paste was considerably good and the adsorption ratio was decreased and in case of using fly-ash, the apparent viscosity and adsorption ratio of cement-paste were improved. 3) The dispersive capacity performance of concrete can be improved by means of the increasing of naphthalene sulfonated component ratio. Also the viscosity and early strength can be improved by means of the increasing of melamine sulfonated component ratio.

• Journal of the Korea Concrete Institute
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• v.16 no.2 s.80
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• pp.241-248
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• 2004

The rheological properties of cement paste system mixed with mineral admixtures (MAs) used to increase the strength and improve durability and fluidity of concrete were investigated. And cement paste systems were designed as one-, two- and three-ingredients blended paste systems. The rheological properties of paste systems were assessed by Rotovisco RT 20 rheometer (Hakke inc.) having a cylindrical serrated spindle. The rheological properties of one-ingredient paste systems were improved with increasing the dosage of superplasticizer. For two-ingredients paste systems, as increasing the replacement ratio of blast furnace slag (BFS) and fly ash (FA), the yield stress and plastic viscosity were decreased compared with non-replacement. In the ordinary portland cement (OPC)-silica fume (SF) paste systems, in accordance with an increase in the replacement ratio of SF, the yield stress and plastic viscosity were increased steeply. For three-ingredients paste systems, both OPC-BFS-SF and OPC-FA-SF paste systems, the rheological properties were improved compared with the only replacement of SF. In the case of both two-and three-ingredients paste systems, the rheological properties using BFS were improved more than FA.