• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.212-212
• /
• 2013

We fabricate and characterize top gate Graphene transistor using aluminum oxide as a gate insulator by atomic layer deposition (ALD). It is found that due to absence of functional group and dangling bonds, ALD of metal oxide is difficult on Graphene. Here we used 4-mercaptopheneol as a functionalization layer on Graphene to facilitate uniform oxide coverage. Contact angle measurement and Atomic force microscopy were used to confirm uniform oxide coverage on Graphene. Raman spectroscopy revealed that functionalization with 4-mercaptopheneol does not induce any defect peak on Graphene. Our device shows mobility values of 4,000 $cm^2/Vs$ at room temperature which also suggest top gate stack does not significantly increase scattering. The noncovalent functionalization method is non-destructive and can be used to grow ultra-thin dielectric for future Graphene applications.

• Magazine of the Korean Society of Agricultural Engineers
• /
• v.37 no.1
• /
• pp.49-54
• /
• 1995

Three types of floating-type automatic inlet were developed for the purpose of reduc- ing farmer's working hours required for water management and saving irrigation water. The point of automation is to use a float within the inlet which is floated and sinked by the ponding depth of paddy field, Thus opens and closes the control gate of irrigation. Suitability of each inlet may depend on production cost, applicability to paddy field condi- tions, and feasibility to farmers, etc. The first model was composed of three parts : chamber for irrigation control gate, chamber for float controlled by ponding depth, and connection bar between the two parts. It was designed to open and close the control gate gradually as the ponding depth drops and rises to a certain level. The second model was designed to improve the weak point of the first model which is the imperfect-closing of gate when it approaches to the end of ir- rigation. A switch-spring was equipped above the connection bar for perfect opening and closing of gate when the ponding depth reaches to a certain level. The third model was designed by combining the two chambers, that is, cut in halves the inlet volume of the above two models. Magnets were equipped above the float for perfect opening and closing gate. The functional experiment for three developed inlets was successfully carried out and the rating curves were derived.

• Journal of the Korean Institute of Telematics and Electronics C
• /
• v.34C no.8
• /
• pp.8-21
• /
• 1997

In this paper, we consider resistive shorts on gate-source, gate-drain, and drain-source as well as opens in MOS FETs included in typical memory cell of VLSI SRAM and analyze behavior of memory by using PSPICE simulation. Using conventional fault models and this behavioral analysis, we propose linear testing algorithm of complexity O(N) which can be applied to both functional testing and IDDQ (quiescent power supply current) testing simultaneously to improve functionality and reliability of memory. Finally, we implement BIST (built-in self tsst) circuit and BICS(built-in current sensor), which are embedded on memory chip, to carry out functional testing efficiently and to detect various defects at high-speed respectively.

• Macromolecular Research
• /
• v.17 no.9
• /
• pp.646-650
• /
• 2009

We report the fabrication of pentacene organic field-effect transistors (OFETs) using a fluorinated styrene-alt-maleic anhydride copolymer gate dielectric, which was prepared from styrene derivatives with a fluorinated side chain [$-CH_2-O-(CH_2)_2-(CF_2)_5CF_3$] and maleic anhydride through a solution polymerization technique. The fluorinated side chain was used to impart hydrophobicity to the surface of the gate dielectric and maleic anhydride was employed to improve its wetting properties. A field-effect mobility of 0.12 cm$^2$/Vs was obtained from the as-prepared top-contact pentacene FETs. Since various functional groups can be introduced into the copolymer due to the nature of maleic anhydride, its physical properties can be manipulated easily. Using this type of copolymer, the performance of organic FETs can be enhanced through optimization of the interfacial properties between the gate dielectric and organic semiconductor.

• Journal of Korean Medical classics
• /
• v.26 no.4
• /
• pp.253-266
• /
• 2013

Objective : There was no attempt to understand Moving Energy between two kidneys(腎間動氣) and Kidney on Left & Life Gate on Right(左腎右命門) by integration progress. So I have faced to study based on two parts with concerning as clues. One is 'Life Right (左 右)' and the other is 'Between(間)'. Methods : Revealing the source of the origin, Nanjingbenyi(難經本義) is given on the basis. Take a close look at publications related to Nanjing(難經) which is about Kidney on Left & Life Gate on Right and Moving Energy between two kidneys. Take a close look at Kidney, the Life Gate and Moving Energy between two kidneys. Look see the three-dimensional uplift movement of Gi(氣). Results : In Neijing(內經) and Nanjing, the basic point of view for Kidney is the same. That is explained in line with attributes of convergence(收斂). 'Life Gate(命門)' is a term to express the divergence feature(發散機能) of kidney. Moving Energy between two kidneys is used to mean the mainspring of human body activity. The Gi in human body loses altitude turning left(左旋而下降) and gains height turning right(右旋而上升). Conclusion : Watching on functional aspect, there are two names for kidney. One is 'Kidney(腎)' which collects the losing altitude turning left and the other is 'Life Gate' which rises turning right. Moreover, the fundamental power that effectuate the uplift movement is Moving Energy between two kidneys. This kind model is a way that can be understood syntagmatically the Kidney on Left & Life Gate on Right and the Moving Energy between two kidneys without any gainsaying the original of Nanjing.

• Proceedings of the KIEE Conference
• /
• 1987.07b
• /
• pp.1467-1470
• /
• 1987

This paper proposes a functional simulation algorithm which decrease the internal memory space and run time in simulation of VLSI. Flip-flop, register, ram, rom, ic and fun are described as functional elements in the simulator. Especially icf is made as new functional element by combining the gate and the functional element, therefore icf is used efficiently in simulation of VLSI. The proposed algorithm is implemented on PC-AT(MS-DOS) in by Prolog-1.

• Journal of the Korean Vacuum Society
• /
• v.18 no.2
• /
• pp.147-150
• /
• 2009

We present a technique for fabricating low leakage organic field-effect transistors by a functional polydimethylsiloxane (PDMS) layer. The technique relies on the photo-chemical process of conversion of the PDMS to a silicon oxide which provides the selective growth of pentacene thin films. The reduced gate leakage current showed ${\sim}10^{-10}$ A in a linear ($V_d=-5\;V$) and saturation ($V_d=-30\;V$) region at $V_g-V_t>0$.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.27 no.6
• /
• pp.1020-1027
• /
• 2003

A traditional mold design has been conducted by an experience-based trial and error, whereby the mold designer would decide the gate locations and processing conditions based on the caring characteristics and its functional requirements. The paper suggests an optimal gate location and processing conditions in the injection molding using a global search method referred to as micro genetic algorithm( ${\mu}$ GA). ${\mu}$ GA yields the optimal solution with a small size of population without respect to design variables for saving time that is needed to calculate the fitness of many individuals. Due to the reason, the paper uses a commercial analysis package of injection molding(CAPA) to analysis a state of flux. In addition to that, axiomatic approach .is applied in the beginning of design. It is a useful method to draw a well-organized and reasonable idea to handle a problem.

• Nuclear Engineering and Technology
• /
• v.44 no.6
• /
• pp.697-708
• /
• 2012

The majority of instrumentation and control (I&C) systems in today's nuclear power plants (NPPs) are based on analog technology. Thus, most existing I&C systems now face obsolescence problems. Existing NPPs have difficulty in repairing and replacing devices and boards during maintenance because manufacturers no longer produce the analog devices and boards used in the implemented I&C systems. Therefore, existing NPPs are replacing the obsolete analog I&C systems with advanced digital systems. New NPPs are also adopting digital I&C systems because the economic efficiencies and usability of the systems are higher than the analog I&C systems. Digital I&C systems are based on two technologies: a microprocessor based system in which software programs manage the required functions and a programmable logic device (PLD) based system in which programmable logic devices, such as field programmable gate arrays, manage the required functions. PLD based systems provide higher levels of performance compared with microprocessor based systems because PLD systems can process the data in parallel while microprocessor based systems process the data sequentially. In this research, a bistable trip logic in a reactor protection system (RPS) was developed using very high speed integrated circuits hardware description language (VHDL), which is a hardware description language used in electronic design to describe the behavior of the digital system. Functional verifications were also performed in order to verify that the bistable trip logic was designed correctly and satisfied the required specifications. For the functional verification, a random testing technique was adopted to generate test inputs for the bistable trip logic.

• Journal of Information Display
• /
• v.11 no.3
• /
• pp.95-99
• /
• 2010

A series of new dielectric polymers with phenyl, epoxy, and carboxylicacid functional groups was prepared via free-radical polymerization. The effect of such dielectric polymers with various functional groups on the performance of OTFT was investigated. The nonpolar groups of terpolymer made the surface of the dielectric layer more hydrophobic and improved the crystal growth of pentacene on the gate insulator, resulting in higher mobility. By controlling the functional group, the electric characteristics of OTFT performance was varied, with $0.00017-0.15\;cm^2/V{\cdot}s$ mobility.