• Title/Summary/Keyword: ftsH

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A study on the crystallographic properties of ZnO thin films for FBAR (FBAR용 ZnO 박막의 결정학적 특성에 관한 연구)

  • Keum, M.J.;Park, W.H.;Yoon, Y.S.;Choe, Hyeong-Uk;Shin, Y.H.;Choe, Dong-Jin;Kim, K.H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07b
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    • pp.703-706
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    • 2002
  • Piezoelectric thin film such as ZnO and AlN can be applicable to FBAR (Film Bulk Acoustic Resonator) device of thin film type and FBAR can be applicable to MMIC. The characteristic of FBAR device is variable according to the deposition conditions of piezoelectric thin film when preparation of thin film by sputtering method. In this study, we prepared ZnO thin film for FBAR using Facing Targets Sputtering apparatus which can be deposited fine Quality thin film because temperature increase of substrate due to the bombardment of high-energy particles can be restrained. And crystalline and c-axis preferred orientation of ZnO thin film with deposition conditions was investigated by XRD.

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A Study on the Relationships between Substrate Bias Potential and Ion Energy Distributions (이온 플레이팅에서 기판 BIAS 전위와 이온 에너지 분포와의 상관관계 연구)

  • Sung, Y.M.;Shin, J.H.;Son, J.B.;Cho, J.S.;Park, C.H.
    • Proceedings of the KIEE Conference
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    • 1995.11a
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    • pp.472-474
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    • 1995
  • A Sputter ion Plating(SIP) system with a r.f. coil electrode and the Facing Target Sputter(FTS) source was designed for high-quality thin film formation. The rf discharge was combined with DC facing target sputtering in order to enhance ionization degree of a sputtered atoms. The energy of ions incident on the substrate depended on the health potential of DC biased substrate. The mean impact ion energy increased with negative bias voltage and rf power. The adhesive force of the TiN film formed was in the range of 30$\sim$50N, and markedly influenced by substrate bias voltage.

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PATIAL DISTRIBUTION OF STAR FORMATION ACTIVITY ON NGC 253 BY FIR AND RADIO EMISSION LINES

  • Takahashi, H.;Matsuo, H.;Nakanishi, K.
    • Publications of The Korean Astronomical Society
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    • v.27 no.4
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    • pp.261-262
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    • 2012
  • The aim of this research is to reveal the spatial distribution of the star formation activity of nearby galaxies by comparing CO molecular emission lines with the large area observation in far-infrared (FIR) lines. We report the imaging observations of NGC 253 by FIR forbidden lines via FIS-FTS and CO molecular lines from low to high excitation levels with ASTE, which are good tracers of star forming regions or photo-dissociation regions, especially spiral galaxies, in order to derive the information of the physical conditions of the ambient interstellar radiation fields. The combination of spatially resolved FIR and sub-mm data leads to the star formation efficiency within galaxy. The ratio between the FIR luminosity and molecular gas mass, $L_{FIR}/M_{H_2}$, is expected to be proportional to the number of stars formed in the galaxy per unit molecular gas mass and time. Moreover the FIR line ux shows current star formation activity directly. Furthermore these can be systematic and statistical data for star formation history and evolution of spiral galaxies.

Properties of ZnO:Al thin film on variation of substrate temperature for display application

  • Keum, M.J.;Kim, H.W.;Cho, B.J.;Son, I.H.;Choi, M.G.;Lee, W.J.;Jang, K.W.;Kim, K.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1474-1476
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    • 2005
  • ZnO:Al(AZO) has been investigated for the photovoltaic cell or TCO(Transparent Conductive Oxide) of the display, because it has good electrical and optical properties. In this study, the ZnO:Al(AZO) thin film prepared on variation of substrate temperature by FTS(Facing Targets Sputtering) system. In case of TCO, because resistivity and roughness values affect the lighting of the OLED, their factors are very important. Therefore, in this paper, the electrical and optical properties of the AZO thin film were investigated with the deposition conditions and its roughness was investigated on variation of the substrate temperature. In results, AZO thin film deposited with the transmittance over 80% and the resistivity was reduced from $1.36{\times}10^{-3}$ [O-cm] to $4{\times}10^{-4}$ [O-cm] with increasing the substrate temperature from R.T to $200[^{\circ}C]$. Especially, we could obtain the resistivity $4{\times}10^{-4}$ [O-cm] of AZO thin film prepared at working pressure 1[mTorr], input current 0.4[A] and substrate temperature $200[^{\circ}C]$.

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The Effect of Thickness and Underlayer on Crystallographic Properties of Co-Cr Thin Films (CoCr 박막의 결정성에 미치는 두께 및 하지층의 영향)

  • Choi, Sung-Min;Kim, Jae-Hwan;Keum, Min-Jong;Kim, Kyung-Hwan;Nakagawa, Nakagawa;Naoe, M.
    • Proceedings of the KIEE Conference
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    • 1998.07d
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    • pp.1447-1449
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    • 1998
  • The c-axis orientation plays a very important role in controlling the main parameters of the perpendicular magnetic recording media, such as perepndicular magnetic anisotropy field $H_{K{\bot}}$, the ratio of coercive force $H_{C{\bot}}/H_{C//}$, the recording density $D_{50}$, and the dispersion of the c-axis orientation $\Delta\theta_{50}$, which is quite important for the performance as perpendicular recording media, as well as the magnetic properties of the film. In this study, the essential process requirement for preparing the Co-Cr films with the superior c-axis orientation, the dependence of $\Delta\theta_{50}$ and the magnetic properties on the film thickness $\delta$, and the effect of underlayer on the dispersion of c-axis orientation have been investigated for both the FTS and DCM system.

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A study on the properties of transparent conductive ZnO:Al films on variaton substrate temperature (기판온도 변화에 따른 ZnO:Al 투명 전도막의 특성 변화)

  • Yang, J.S.;Seong, H.Y.;Keum, M.J.;Son, I.H.;Shin, S.K.;Kim, K.H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.525-528
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    • 2001
  • ZnO:Al thin film can be used as a transparent conducting oxide(TCO) which has low electric resistivity and high optical transmittance for the front electrode of amorphous silicon solar cells and display devices. This study of electrical, crystallographic and optical properties of Al doped ZnO thin films prepared by Facing Targets Sputtering(FTS), where strong internal magnets were contained in target holders to confine the plasma between the targets, is described. Optimal transmittance and resistivity was obtained by controlling flow rate of $O_2$ gas and substrate temperature. When the $O_2$ gas rate of 0.3 and substrate temperature $200^{\circ}C$, ZnO:Al thin film had strongly oriented c-axis and lower resistivity( < $10^{-4}{\Omega}-cm$ ).

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Reduction of Simulation Number for Ship Handling Safety Assessment (선박운항 시뮬레이터 실험조건 축소화 연구)

  • Kwon, S.H.;Oh, H.S.
    • Journal of Korean Society of Industrial and Systems Engineering
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    • v.35 no.1
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    • pp.101-106
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    • 2012
  • Ship handling simulator is a virtual ship navigating system with three dimensional screen system and simulation programs. FTS simulation can produce theoretically infinite experiment tests without time constraint, but which results in collecting determinstic observations. RTS simulation can collect statistical observations but has disadvantage of spending at least 30 minutes for a single experiment. The previous studies suggested that the number of experiment conditions to be tested could be reduced to obtain random data with RTS simulation by focusing on highly difficult experiment condition for ship handling. It has the limitation of not estimating the distribution of ship handling difficulty for the route. In this paper, similarity and clustering analysis are suggested for reduction methodology of experiment conditions. Similarity of experiment conditions are measured as follows: euclidean distance of ship handling difficulty index and correlation matrix of distance differences from the designed route. Clustering analysis and multi-dimensional scaling are applied to classify experiment conditions with measured similarity into reducing the number of RTS simulation conditions. An empirical result on Dangin harbor is shown and discussed.

EFFECT OF PARAMAGNETIC Co$_{67}$Cr$_{33}$ UNDERLAYER ON CRYSTALLOGRAPHIC AND MAGNETIC CHARACTERISTICS OF Co-Cr-Ta LAYERS IN PERPENDICULAR MAGNETIC RECORDING MEDIA

  • Kim, Kyung-Hwan;Nakagawa, Shigeki;Takayama, Seiryu;Naoe, Masahiko
    • Journal of the Korean institute of surface engineering
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    • v.29 no.6
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    • pp.847-850
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    • 1996
  • The bi-layered films composed of Co-Cr-Ta layers and paramagnetic $Co_{67}Cr_{33}$ underlayer were deposited by suing Facing Targets Sputtering(FTS). The effects of $Co_{67}Cr_{33}$ underlayer on the crystallographic and magnetic characteristics of the Co-Cr-Ta layer deposited on the underlayer was investigated. The diffraction intensity $I_{p(002)}$ of Co-Cr-Ta layers on the $Co_{67}Cr_{33}$ layer was stronger than that of single layer and Co-Cr-Ta/Ti double layer. Therefore, the crystallinity of Co-Cr-Ta layer was imporved by the $Co_{67}Cr_{33}$ underlayer rather than Ti ones. However, te coercivity H$_{c\bot}$ of Co-Cr-Ta layers deposited on $Co_{67}Cr_{33}$ underlayer was as low as 250 Oe even at substrate temperature of $220^{\circ}C$. This H$_{c\bot}$ decrease seems to be attributed to the effect of the $Co_{67}Cr_{33}$ underlayer as well as interval time between deposition of the underlayer and the Co-Cr-Ta layer.

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A Study on the Fabrication of ITO Film by Discharge Plasma (FTS 방식에 의한 ITO Film 제작에 관한 연구)

  • Ma, H.B.;Ko, J.S.;Son, J.B.;Park, C.S.;Park, C.H.;Cho, J.S.
    • Proceedings of the KIEE Conference
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    • 1998.07e
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    • pp.1761-1763
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    • 1998
  • ITO(Iridium-Tin Oxide) thin film, as discharge electrodes in AC PDP, should have low resistivity and high transparency. Regarded as a high deposition rate method, the ITO thin film fabricated by the facing target sputtering system has been studied in this paper. The electrical property of the ITO film deposited below $150^{\circ}C$ is not satisfied. The SEM pictures show that the ITO films deposited below $150^{\circ}C$ are amorphous. After being annealed the amorphous ITO films become crystalline, and for this reason, the electrical property of amorphous ITO films can be effectively improved by annealing process. An ITO film with the resistivity as low as $1.99{\times}10^{-4}$ and transparency above 85% has be gotten after vacuum annealing at $300^{\circ}C$ for 2 hours while deposited at $75^{\circ}C$. The corresponding deposition rate is $220{\AA}/min$.

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A Study on the Characteristics of FTS Type Ion Plating System and Thin film Deposition (FTS형 이온 플레이팅의 특성 및 박막 형성에 관한 연구)

  • Sung, Y.M.;Lee, C.Y.;Shin, J.H.;Kim, G.S.;Cho, J.S.;Park, C.H.
    • Proceedings of the KIEE Conference
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    • 1994.07b
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    • pp.1589-1592
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    • 1994
  • We developed the ion plating system, consisted of the Facing Target Magnetron Sputtering System and the r.f, electrode of the coil type, which was available to control the reactive and the adhesion between thin film and substrate, and studied about the discharge characteristics and the optimum condition in order to form the high quality thin film. The characteristics of discharge and plasma was measured as Double Probe and Electrostatic Retarding Grid Analyzer. The incident ion energy on the substrate was increased as the increasing r.f power, bias voltage. By the r.f electrode, the ionization rate of the sputtered particles was about 75%, and the mean incident ion energy depend on the value which was difference between the plasma potential and biased substrate potential.

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