• 제목/요약/키워드: ftsH

검색결과 46건 처리시간 0.022초

Effect of Fodder Tree Species with Condensed Tannin Contents on In vitro Methane Production

  • Vazquez, Ernestina Gutierrez;Medina, Leonardo Hernandez;Benavides, Liliana Marquez;Caratachea, Aureliano Juarez;Razo, Guillermo Salas;Burgos, Armin Javier Ayala;Rodriguez, Ruy Ortiz
    • Asian-Australasian Journal of Animal Sciences
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    • 제29권1호
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    • pp.73-79
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    • 2016
  • The objective was to evaluate the effect of fodder tree species (FTS) with condensed tannin contents: Cordia elaeagnoides, Platymiscium lasiocarpum, Vitex mollis, and Haematoxylon brasiletto, on in vitro methane ($CH_4$) production at 24 h post incubation. The analysis was performed using the in vitro gas production technique, with three levels of inclusion/species: 600, 800, and 1,000 mg and with 4 replicates/species/level of inclusion. The substrate was incubated at $39^{\circ}C$, and the gas and $CH_4$ production were recorded at 4, 8, 12, and 24 h post incubation. The data collected was analyzed through Pearson correlation, polinomial regression and fixed effects models. There were negative correlations between FTS-total gas volume (r = -0.40; p<0.001); FTS-volume of $CH_4$ produced (r = -0.40; p<0.001) and between the inclusion level-volume of $CH_4$ produced (r = -0.20; p<0.001). As well as a positive correlation between hours post incubation-total gas volume (r = 0.42; p<0.001) and between hours post incubation-volume of $CH_4$ produced (r = 0.48; p<0.001). The FTS: C. elaeagnoides, V. mollis, and H. brasiletto have potential, in the three inclusion levels analyzed, to reduce $CH_4$ emission on in vitro trials (>32.7%), taking into account the total $CH_4$ production at 24 h of the forage used as reference (Avena sativa). It's suggested that C. elaeagnoides-according to its crude protein, neutral detergent fiber, and condensed tannins content- is the best alternative within the FTS analyzed, for feeding ruminants and for the control of $CH_4$ emissions during the dry season.

Production of Poly(3-hydroxybutyrate) [P(3HB)] with High P(3HB) Content by Recombinant Escherichia coli Harboring the Alcaligenes latus P(3HB) Biosynthesis Genes and the E. coli ftsZ Gene

  • Choi, Jong-Il;Lee, Sang-Yup
    • Journal of Microbiology and Biotechnology
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    • 제9권6호
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    • pp.722-725
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    • 1999
  • Filamentation-suppressed recombinant Escherichia coli strain harboring the Alcaligenes latus polyhydroxyalkanoate (PHA) biosynthesis genes and the E. coli ftsZ gene was constructed and cultivated for the production of poly(3-hydroxybutyrate) [P(3HB)] with high concentration and high content. By the pH-stat fed-batch culture of this recombinant E. coli strain XL1-Blue(pJC5), the final cell concentration and P(3HB) concentration obtained in 44.25h were 172.2g cell dry weight/l and 141.9g P(3HB)/l, respectively, resulting in productivity of 3.21g P(3HB)/l-h. More importantly, the P(3HB) content obtained was 82.4 wt %, which was significantly higher than that obtained with the recombinant E. coli harboring only the PHA biosynthesis genes.

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SAW Filter용 ZnO 박막의 제작 (Preparation of ZnO thin film for SAW filter)

  • 성하윤;양진석;금민종;손인환;김경환
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2000년도 추계학술대회 논문집 학회본부 C
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    • pp.509-510
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    • 2000
  • Piezoelectric ZnO thin films were deposited on slide glass by Facing Targets Sputtering(FTS). The Facing Targets Sputtering system can deposit thin film in plasma-free situation and change the deposition condition in wide range. The characteristics of zinc oxide thin films on power, working pressure, and substrate temperature were investigated by XRD (x-ray diffractometer), alpha-step (Tencor) and SEM (Scanning Electron Microscopy) analyses. In the results, we suggest that FTS system is very suitable to preparing high quality ZnO thin films with good c-axis orientation.

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스퍼터링 조건 변화에 따라 제작된 ITO 박막의 특성 (Characteristics of ITO thin films with sputtering conditions)

  • 김경환;김현웅;공석현;금민종;신성권
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.430-431
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    • 2005
  • In this work, the ITO thin films were prepared by FTS (Facing Targets Sputtering) system under different sputtering conditions which were varying $O_2$ gas flow and input current. As a function of sputtering conditions, electrical and optical properties of prepared ITO thin films were measured. The electrical characteristics, surface roughness and transmittance of the ITO thin films were evaluated by Hall Effect Measurement, AFM, and UV-VIS spectrometer respectively. In addition, I-V properties of OLED cells were measured by 4156A(HP).

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ITO 박막의 제작 조건에 따른 OLED의 I-V 특성 (I-V properties of OLED with deposition conditions of ITO thin films)

  • 금민종;김현웅;조범진;김한기;김경환
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.434-435
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    • 2005
  • In this work, the ITO thin films were prepared by FTS (Facing Targets Sputtering) system under different sputtering conditions which were varying $O_2$ gas flow, input current and working gas pressure. As a function of sputtering conditions, electrical and optical properties of prepared ITO thin films were measured. The electrical characteristics, surface roughness and transmittance of the ITO thin films were evaluated by Hall Effect Measurement, AFM, and UV-VIS spectrometer respectively. In addition, I-V properties of OLED cells were measured by 4156A(HP).

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막두께 변화에 따른 AZO 박막의 특성 연구 (A study on characteristics of AZO thin film by variation of thickness)

  • 김현웅;금민종;이원재;장경욱;최형욱;김경환
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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    • pp.586-589
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    • 2004
  • In this study, AZO(ZnO:Al) thin film were prepared by FTS(Facing Target Sputtering) system. The electrical, optical properties and crystalline of AZO thin film with thickness have been investigated. The thickness, transmittance, crystalline and electrical properties of AZO thin film were measured by a-step, UV-VIS spectrometer, hall effect measurement system, XRD and four-point probe, respectively. As a result, AZO thin film deposited with the transmittance over 80% and the resistivity about $10^{-4}\;\Omega-cm$.

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Transcriptional Analysis of 10 Selected Genes in a Model of Penicillin G Induced Persistence of Chlamydophila psittaci in HeLa Cells

  • Hu, Yanqun;Chen, Lili;Wang, Chuan;Xie, Yafeng;Chen, Zhixi;Liu, Liangzhuan;Su, Zehong;Wu, Yimou
    • Journal of Microbiology and Biotechnology
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    • 제25권8호
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    • pp.1246-1256
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    • 2015
  • Chlamydophila psittaci is an important intracellular pathogen. Persistent infection is an important state of the host-parasite interaction in this chlamydial infection, which plays a significant role in spreading the organism within animal populations and in causing chronic chlamydiosis and serious sequelae. In this study, a C. psittaci persistent infection cell model was induced by penicillin G, and real-time quantitative PCR was used to study the transcriptional levels of 10 C. psittaci genes (dnaA, dnaK, ftsW, ftsY, grpE, rpsD, incC, omcB, CPSIT_0846, and CPSIT_0042) in acute and penicillin-G-induced persistent infection cultures. Compared with the acute cultures, the penicillin-G-treated cultures showed a reduced chlamydial inclusion size and a significantly decreased number of elementary body particles. Additionally, some enlarged aberrant reticulate body particles were present in the penicillin-G-treated cultures but not the acute ones. The expression levels of genes encoding products for cell division (FtsW, FtsY) and outer membrane protein E encoding gene (CPSIT_0042) were downregulated (p < 0.05) from 6 h post-infection onward in the persistent infection cultures. Also from 6 h post-infection, the expression levels of DnaA, DnaK, IncC, RpsD, GrpE, and CPSIT_0846 were upregulated (p < 0.05); however, the expression level of OmcB in the persistent infection was< almost the same as that in the acute infection (p > 0.05). These results provide new insight regarding molecular activities that accompany persistence of C. psittaci, which may play important roles in the pathogenesis of C. psittaci infection.

저기압하의 아르곤 가스의 RF 글로우 방전특성 (RF Glow Discharge Characteristics of Argon at Low Gas Pressure)

  • 곽동주;김두환;박정후
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1995년도 하계학술대회 논문집 C
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    • pp.1382-1384
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    • 1995
  • In order to study the structure of RF glow discharge driven at 13.56MHz in argon, the discharge voltage, current and phase shift between them will be measured over a wide range of discharge parameters(gas pressure between 1mTorr and 50mTorr with discharge power between 20mW and 200W). In this paper, the dc glow discharge characteristics and plasma parameters of both FTS and CPMS systems are studied experimentally. It is found that for CPMS system discharge is stablized under wider ranges of magnetic field and pressure than for FTS system. The plasma density and electron temperature of the plasma for these two systems are in the range of $10^{10}{\sim}7{\times}10^{11}[cm^{-3}]$ and $3.5{\sim}6.5$[eV], respectively.

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Preparation of ITO Thin Films for Display Application with $O_2$ Gas Flow Ratio and Input Current by FTS (Facing Targets Sputtering) System

  • Kim, H.W.;Keum, M.J.;Lee, K.S.;Kim, H.K.;Kim, K.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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    • pp.1477-1479
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    • 2005
  • In this work, the ITO thin films were prepared by FTS (Facing Targets Sputtering) system under different sputtering conditions which were varying $O_2$ gas flow, input current at room temperature. As a function of sputtering conditions, electrical and optical properties of prepared ITO thin films were measured. The electrical, optical characteristics and surface roughness of prepared ITO thin films were measured. In the results, as increasing $O_2$ gas 0.1[sccm] to 0.7[sccm], resistivity of ITO thin film was increased with a decreasing carrier concentration, $O_2$ gas over 0.3[sccm] the carrier mobility have a similarly value. Transmittance of prepared ITO thin films were improved at increasing $O_2$ gas 0.1[sccm] to 0.7[sccm]. And transmittance of all of the prepared ITO thin films was over 80%. We could obtain resistivity $6.19{\times}10^{-4}[{\omega}{\cdot}cm]$, carrier mobility $22.9[cm^2/V{\cdot}sec]$, carrier concentration $4.41{\times}10^{20}[cm^{-3}]$ and transmittance over 80% of ITO thin film prepared at working pressure 1mTorr, input current 0.4A without any substrate heating.

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