• Journal of Welding and Joining
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• 제19권6호
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• pp.608-613
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• 2001

In this study, the rotary bending fatigue test was carried out with two kinds of base metal, martensite stainless steel STR3 and austenite stainless steel STR35 and the dissimilar friction welded material with them. To compare the fatigue fifes according to the notch positions, the small circular defect was worked on the bonded line, 1.0mm and 0.5mm distance form the bonded line. The fatigue limits of the STR3 and STR35 base metal were 429.0MPa and 409.4MPa respectably. In comparison with fatigue life at the same notch positions, the STR35 specimens showed about 190% for base metal, 82% for 1.0mm distance notched specimens higher than that of the STR3. But the fatigue life of the 0.5mm distance notched STR35 specimen showed about 35% lower than that of the STR3 specimen. And the bonded line notched specimen was much lower fatigue life than the other specimens because of separation of the bonded line.

• Journal of Korean Neurosurgical Society
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• 제64권3호
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• pp.346-358
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• 2021

Secondary neurulation is a morphological process described since the second half of the 19th century; it accounts for the formation of the caudal spinal cord in mammals including humans. A similar process takes place in birds. This form of neurulation is caused by the growth of the tail bud region, the most caudal axial region of the embryo. Experimental work in different animal species leads to questioning dogmas widely disseminated in the medical literature. Thus, it is clearly established that the tail bud is not a mass of undifferentiated pluripotent cells but is made up of a juxtaposition of territories whose fate is different. The lumens of the two tubes generated by the two modes of neurulation are continuous. There seem to be multiple cavities in the human embryo, but discrepancies exist according to the authors. Finally, the tissues that generate the secondary neural tube are initially located in the most superficial layer of the embryo. These cells must undergo internalization to generate the secondary neurectoderm. A defect in internalization could lead to an open neural tube defect that contradicts the dogma that a secondary neurulation defect is closed by definition.

• 한국컴퓨터정보학회논문지
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• 제20권1호
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• pp.197-206
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• 2015

모든 소프트웨어 결함들이 시스템에 같은 정도의 영향을 미치는 것이 아니므로 결함이 미치는 충격의 정도를 나타내는 결함 심각도는 소프트웨어 품질 관련 작업들에 중요한 역할을 하고 있다. 결함 심각도 관련 기존 연구들은 심각도 레벨은 정의하였지만 품질 작업의 기본 단위인 모듈의 심각도에 관한 언급은 거의 없었다. 본 논문에서는 심각도 레벨이 증가함에 따라 심각도 값이 급격히 증가하는 심각도 성질을 이용하여 결함 심각도 메트릭을 지수 함수 형태로 정의한 후, 모듈 내부의 결함 수와 결함 심각도 메트릭에 기반한 새로운 모듈 심각도 메트릭 집합을 정의하였다. 제안 메트릭들의 적용가능성을 보이기 위해 Weyuker 기준들을 이용한 분석적 검증과 NASA 공개 데이터 집합을 이용한 실험적 검증을 수행하였으며, 제안 메트릭들 중 ms는 모듈의 심각도 정량화에, msd는 심각도에 기반한 시스템간의 비교에 매우 유용하게 사용될 수 있다는 것을 보였다.

• Nuclear Engineering and Technology
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• 제55권6호
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• pp.2298-2304
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• 2023

Titanium alloys are expected to become one of the candidate materials for nuclear-powered spacecraft due to their excellent overall performance. Nevertheless, atomistic mechanisms of the defect accumulation and evolution of the materials due to long-term exposure to irradiation remain scarcely understood by far. Here we investigate the heavy irradiation damage in a-titanium with a dose as high as 4.0 canonical displacements per atom (cDPA) using atomistic simulations of Frenkel pair accumulation. Results show that the content of surviving defects increases sharply before 0.04 cDPA and then decreases slowly to stabilize, exhibiting a strong correlation with the system energy. Under the current simulation conditions, the defect clustering fraction may be not directly dependent on the irradiation dose. Compared to vacancies, interstitials are more likely to form clusters, which may further cause the formation of 1/3<1210> interstitial-type dislocation loops extended along the (1010) plane. This study provides an important insight into the understanding of the irradiation damage behaviors for titanium.

• Journal of Periodontal and Implant Science
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• 제23권2호
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• pp.345-351
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• 1993

Various alloplastic materials have been used on the periodontally diseased ossous defects. Hydroxyapatite, which is used the most common alloplastic material is a non-resorbable form of calcium phosphate and natural coral which is a biodegradable by carbonic anhydrase in osteoclast was introduced recently. The purpose of the present study was to evaluate the clinical effects of porous hydoxyapatite and natural coral on the human periodontal defects. Four males and three females who had adult periodontitis were selected for this study. The teeth that had similar bone loss radiographically and periodontal pocket deeper than 5mm were selected. Gingival recession, pocket depth, plaque index(Silness & Loe), sulcus bleeding index and tooth mobility (measured by Periotest$^{(r)}$) were examined before graft. Before insertion of alloplastic materials, the depth from CEJ to bone crest and from CEJ to base of the osseous defect was recorded. Porous particulate hydroxyapatite(Interpore 200$^{(r)}$, A group) was place on the defect and natural coral(Biocoral$^{(r)}$, B group) was placed on the defect of the opposing tooth. Six months post-surgically the same parameters were recorded by reentry procedures. A and B group showed 0.6mm of mean recession. Mean reduction of pocket depth were 5mm for A group and 4.9mm of B group. Reduced SBI and tooth mobility were recorded. Osseous defect fills of the original defects were 2.9mm for A and 3mm for B group. Percentage defect fills were 71% for A and 59% for B group. The difference of defect fill between pre- and post-insertion was statstically significant(p<0.05). But the difference between the two groups was not significant statistically(p<0.05). The clinical impression at 6 month re-entry and the numerical date indicate that natural coral as well as porous particulate hydoxyapatite has a definite potential as an alloplastic implant in the treatment of periodontal osseous defects.

• 산업경영시스템학회지
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• 제44권4호
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• pp.128-135
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• 2021

WDM(Wavelength Division Multiplexing) is called a wavelength division multiplexing optical transmission method and is a next-generation optical transmission technology. Case company F has recently developed and sold PLC(Planar Lightwave Circuit), a key element necessary for WDM system production. Although Chinese processing companies are being used as a global outsourcing strategy to increase price competitiveness by lowering manufacturing unit prices, the average defect rate of products manufactured by Chinese processing companies is more than 50%, causing many problems. However, Chinese processing companies are trying to avoid responsibility, saying that the cause of the defect is the defective PLC Wafer provided by Company F. Therefore, in this study, the responsibility of the PLC defect is clearly identified through estimating the defect rate of PLC using the sampling inspection method, and the improvement plan for each cause of the PLC defect for PLC yeild improvement is proposed. The result of this research will greatly contribute to eliminating the controversy over providing the cause of defects between global outsourcing companies and the head office. In addition, it is expected to form a partnership with Company F and a Chinese processing company, which will serve as a cornerstone for successful global outsourcing. In the future, it is necessary to increase the reliability of the PLC yield calculation by extracting more precisely the number of defects.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.941-943
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• 1998

Exploitation of equipment with cross linked polyethylene (XLPE) insulation requires its condition monitoring and diagnostic. Traditionally diagnostics of insulation is carried out by means of partial discharge detection. Many researchers have developed a lot of methods to identify the defect by the PD form. However, such identification of a defect, for example, void, inclusion or treeing, does not say about its danger from a point of view of full insulation gap breakdown and insulation construction failure. The information about the form and size of formed upon high voltage treeing is necessary for prediction of the remained resource of XLPE insulation. For this purpose we carry out experimental research for determination of the dependencies between PD characteristics in XLPE upon time and three dimension PD patterns of corresponding treeing. The investigations were carried out by means of electrical measurement of PD current and simultaneous optical recording of treeing image. Test results show that the PD patterns can be applied for detecting tree growth well.

• 한국정밀공학회지
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• 제29권6호
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• pp.613-620
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• 2012

Rails are subjected to damage from rolling contact fatigue, which leads to defects such as cracks. Rolling contact fatigue damages on the surface of rail such as head check, squats are one of growing problems. Another form of rail surface damage, known as "Ballast imprint" has become apparent. This form of damage is associated with ballast particles becoming trapped between the wheel and the surface of rail. These defects are still one of the key reasons for rail maintenance and replacement. In this study, we have investigated whether the ballast imprint is an initiator of head check type cracks and effect of defect size using Finite element analysis. The FE analysis were used to investigate stresses and strains in subsurface of defects according to variation of defect size. Based on loading cycles obtained from FE analysis, fatigue analysis for each point was carried out.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.81-82
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• 2007

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C\;and\;420^{\circ}C$, respectively. After the as-grown single crystal $CdGa_2Se_4$ thin films were annealed in Cd-, Se-, and Ga -atmospheres, the origin of point defects of single crystal $CdGa_2Se_4$ thin films has been investigated by PL at 10 K. The native defects of $V_{Cd},\;V_{Se},\;Cd_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as donors or acceptors. And we concluded that the heat-treatment in the Cd-atmosphere converted single crystal $CdGa_2Se_4$ thin films to an optical p-type. Also, we confirmed that Ga in $CdGa_2Se_4$/GaAs did not form the native defects because Ga in single crystal $CdGa_2Se_4$ thin films existed in the form of stable bonds.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.257-265
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• 2002

A stoichiometric mixture of evaporating materials for AgInS$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, AgInS$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE) system. The source and substrate temperatures were 680 $^{\circ}C$ and 410 $^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of AgInS$_2$ single crystal thin films measured from Hall effect by van der Pauw method are 9.35${\times}$10$\^$16/ cm$\^$-3/ and 294 $\textrm{cm}^2$/V$.$s at 293 K, respectively. From the optical absorption measurement, the temperature dependence of the energy band gap on AgInS$_2$ single crystal thin films was found to be E$\_$g/(T) : 2.1365 eV - (9.89 ${\times}$ 10$\^$-3/ eV) T$^2$/(2930 + T). After the as-grown AgInS$_2$ single crystal thin films was annealed in Ag-, S-, and In-atmospheres, the origin of point defects of AgInS$_2$ single crystal thin films has been investigated by using the photoluminescence(PL) at 10 K. The native defects of V$\_$AG/, V$\_$S/, Ag$\_$int/, and S$\_$int/ obtained from PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted AgInS$_2$ single crystal thin films to an optical p-type. Also, we confirmed that In in AgInS$_2$/GaAs did not form the native defects because In in AgInS$_2$ single crystal thin films did exist in the form of stable bonds.