• Journal of Adhesion and Interface
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• v.12 no.4
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• pp.144-150
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• 2011

The effect of low profile agent and release agent on the surface and mechanical properties of bulk mold compound were investigated. Atomic content and contact angle of surface were characterized using X-ray photoelectron spectroscopy and contact anglemeter. Surface morphology and surface roughness were obtained using field emission scanning electron microscope and atomic force microscope, respectively. As increasing the low profile agent from 0 to 9.2 wt%, the volume shrinkage and surface roughness decreased from 0.35% to 0.05%, and from $0.27{\mu}m$ to $0.12{\mu}m$, respectively. The increase of release agent from 1.8 wt% to 3.6 wt% resulted in the migration of release agent to sample surface and it increased the surface roughness. The flexural strength and impact strength were decreased approximately 30% as the low profile agent increasing from 5.0 wt% to 9.0 wt%.

• Journal of Adhesion and Interface
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• v.12 no.1
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• pp.26-33
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• 2011

Phosphoric acid treatments were conducted to improve the adhesion property of polyketone film to rubber. The effects of phosphoric acid treatments were characterized by using a contact angle analyzer and a XPS (X-ray photoelectron spectroscopy). Morphological changes were observed by using a scanning electron microscope (SEM) and an atomic force microscope (AFM) as the acid treatment condition varied in concentration and time. The contact angle was found to significantly decrease with the acid treatment. According to the XPS, increased wettability was attributed to the inclusion of oxygen containing groups such as hydroxyl, carbonyl and carboxyl by acid treatments. Cracks and pores were produced on the polyketone film surface and thus, roughness increased with the acid treatment. Interfacial adhesion strength between polyketone and natural rubber was largely improved by acid treatment due to the increased wettability and roughness of the polyketone surface. However, the higher level of acid treatment caused the degradation of the polyketone surface, and thus, its interfacial adhesion consequently decreased.

• Bulletin of the Korean Chemical Society
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• v.30 no.11
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• pp.2589-2594
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• 2009

Aging phenomena of plasma polymer films were studied by using the surface analysis techniques of contact angle measurement, X-ray photoelectron spectroscopy (XPS), time-of-flight secondary ion mass spectrometry (TOFSIMS), and atomic force microscopy (AFM). The polymer films were grown on an aluminum substrate by using a plasma polymerization method from a gas mixture of acetylene and helium, and the films were subsequently modified to have a hydrophilic surface by oxygen plasma treatment. Aging of the polymer films was examined by exposing the samples to water and air environments. The aging process increased the hydrophobicity of the surface, as revealed by an increase in the advancing contact angle of water. XPS analysis showed that the population of oxygen-containing polar groups increased due to the uptake of oxygen during the aging, whereas TOF-SIMS analysis revealed a decrease in the polar group population in the uppermost surface layer. The results suggest that the change in surface property from hydrophilic to hydrophobic nature results from the restructuring of polymer chains near the surface, rather than compositional change of the surface. Oxidative degradation may enhance the mobility and the restructuring process of polymer chains.

• Bulletin of the Korean Chemical Society
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• v.25 no.1
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• pp.63-68
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• 2004

Sugar-based gelator p-dodecanoyl-aminophenyl- ${\beta}$-D-aldopyranosides (1-3) have been shown to self-assemble in the presence of p-aminophenyl aldopyranosides. The hydrogel 1+4 showed the double-helical structure with 3-25 nm outer diameters, which is quite different from that of 1. The gel 2+5 revealed twisted ribbon structure with 30-50 nm in widths and a few micrometers of length whereas the gel 3+4 revealed the single and the bundled fiber structures. The difference in these gel supramolecular structures has successfully been transcribed into silica structures by sol-gel polymerization of tetraethoxysilane (TEOS), resulting in the doublehelical, the twisted-ribbon, the single and the multiple (lotus-shaped) hollow fiber structures. These results indicate that novel silica structures can be created by transcription of various superstructures formed in binary gels through the hydrogen-bonding interaction, and the amino group of the p-aminophenyl aldopyranosides acts as an efficient driving force to create novel silica nanotubes. Furthermore, electron energy-loss spectroscopy (ELLS) provided strong evidence for the inner hollow structure of the double-helical silica nanotube. This is a novel and successful example that a variety of new silica structures can be created using a library of carbohydrate gel fibers as their templates.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.154-154
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• 1999

금속산화막은 전자부품 및 광학적 응용에 널리 사용되고 있다. 특히 알루미늄의 산화막은 유전체의 재료로 커패시터에 많이 사용되고 있다. 이러한 알루미늄 산화막을 plasma를 이용한 ion plating에 의해 형성하였다.Activated Reactive Evaporation은 화합물의 증착율을 높이는데 좋은 증착법이다. 이러한 증착법에는 reactive ion plating와 ion-assisted deposition 그리고 ion beam sputtering 등이 있다. 본 연구에서는 알루미늄 산화막을 증착시키기 위해 plasma를 이용한 electron-beam법을 사용하였다. Turbo molecular pump로 챔버 내의 진공을 약 10-7torr까지 낸린 후 5$\times$10-5torr까지 O2와 Ar을 주입시켰다. 각 기체의 분압은 RGA(residual gas analyzer)로 조사하여 일정하게 유지시켰다. plasma를 발생시키기 위해 filament에서 열전자를 방출시키고 1kV 정도의 electrode에 의해 가속시켜 이들 기체들과 반응시켜 plasma를 발생시켰다. 금속 알루미늄을 5kV정도의 고전압과 90mA의 전류로 electron beam에 의해 증발시켰다. 기판의 흡착율을 높ㅇ기 위해 기판에 500V로 bias 전압을 걸어 주었다. 증발된 금속 알루미늄 증기들이 plasmaso의 산소 이온들과 활성 반응을 이루어 알루미늄 기판 위에 Al2O3막을 형성하였다. 알루미늄 산화막을 분석하기 위해 XPS(X-ray Photoelectron Spectroscopy)로 화학적 조성을 조사하였는데, 알루미늄의 2p전자의 binding energy가 76.5eV로 측정되었다. 이는 대부분 증착된 알루미늄이 산소 이온과 반응하여 Al2O3로 형성된 것이다. SEM(Scanning electron Microscopy)과 AFM(Atomim Force microscopy)으로 증착박 표면의 topology와 roughness를 관찰하였다. grain의 크기는 10nm에서 150nm이었고 증착막의 roughness는 4.2nm이었다. 그리고 이 산화막에 전극을 형성하여 유전 상수와 손실률 등을 측정하였다. 이와 같이 plasma를 이용한 3-beam에 의한 증착은 금속의 산화막을 얻는데 유용한 기술로 광학 재료 및 유전 재료의 개발 및 연구에 많이 사용될 것으로 기대된다.

• Journal of Surface Science and Engineering
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• v.43 no.3
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• pp.132-141
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• 2010

NiTi alloy has been used for orthodontic wire due to good mechanical properties, such as elastic strength and frictional resistance, combined with a high resistance to corrosion. Recently, these wire were coated by polymer and ceramic materials for aesthetics. The purpose of this study was to investigate surface characteristics of polymer coated NiTi alloy wire for orthodontics using various instruments. Wires (round type and rectangular type) were used, respectively, for experiment. Polymer coating was carried out for wire. Specimen was investigated with field emission scanning electron microscopy(FE-SEM), energy dispersive x-ray spectroscopy(EDS) and atomic force microscopy(AFM). The phase transformation of non-coated NiTi wire from martensite to austenite occurred at the range of $14{\sim}15^{\circ}C$, in the case of coated wire, it occurred at the range of $16{\sim}18^{\circ}C$. Polymer coating on NiTi wire surface decreased the surface defects such as scratch which was formed at severe machined surface. From the AFM results, the average surface roughness of non-coated and coated NiTi wire was 13.1 nm, and 224.5 nm, respectively. From convetional surface roughness test, the average surface roughness of non-coated and coated NiTi wire was $0.046{\mu}m$, and $0.718{\mu}m$, respectively.

• Transactions on Electrical and Electronic Materials
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• v.13 no.3
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• pp.157-161
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• 2012

In this study, we investigated the etching characteristics of ITO thin films and the effects of inert gases added to $Cl_2/BCl_3$ inductivity coupled plasma. The maximum etch rate of ITO thin film was 130.0 nm/min upon the addition of Ar (6 sccm) to the $Cl_2/BCl_3$ (4:16 sccm) plasma, which was higher than that with He or $N_2$ added to the plasma. The ion bombardment by $Ar^+$ sputtering was due to the relatively low volatility of the by-products formed in the $Cl_2/BCl_3$ (4:16 sccm) plasma. The surface of the etched ITO thin film was characterized by x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). From the XPS results, it is concluded that the proper addition of Ar and He to the $Cl_2/BCl_3$ plasma removes carbon and by-products from the surface of the etched ITO thin film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.8
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• pp.486-490
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• 2014

$Al_2O_3$ films on silicon carbide were fabricated by Aerosol deposition with annealing temperature at $800^{\circ}C$ and $1,000^{\circ}C$. The effect of thermal treatment on physical properties of $Al_2O_3$ thin films has been investigated by XRD (X-ray diffraction), AFM (atomic force microscope), SEM (scanning electron microscope), and AES (auger electron spectroscopy). Also electrical properties have been investigated by Keithley 4,200 semiconductor parameter analyzer to explain the interface trapped charge density ($D_{it}$), flatband voltage ($V_{FB}$) and leakage current ($I_o$). $Al_2O_3$ films become crystallized with increasing temperature by calculating full width at half maximum (FWHM) of diffraction peaks, also surface morphology is observed by topography measurement in non-contact mode AFM. $D_{it}$ was $2.26{\times}10^{-12}eV^{-1}.cm^{-2}$ at $800^{\circ}C$ annealed sample, which is the lowest value in all samples. Also the sample annealed at $800^{\circ}C$ has the lowest leakage current of $4.89{\times}10^{-13}A$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.7
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• pp.503-509
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• 2013

In this study, $Cu(In_{1-x},Ga_x)Se_2$ (CIGS) thin films were prepared on the Mo coated soda-lime glass by the DC magnetron sputtering and a subsequent selenization process. For the selenization process, selenization rapid thermal process(RTP) with cracker cell, which was helpful to smaller an atomic of Se, was adopted. To make CIGS layer, they were then annealed with the cracked Se. Based on this selenization method, we made several CIGS thin film and investigated the effects of In deposition time, and selenization time. Through x-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive spectroscopy (EDS), and atomic force microscopy (AFM), it is found that the Mo/In/CuGa structure and the high sputtering power shows the dominant chalcopyrite structure and have a uniform distribution of the grain size. The CIGS films with the In deposition time of 5 min has the best structure due to the smooth surface. And CIGS films with the selenization time of 50 min show good crystalline growth without any voids.

• Korean Journal of Materials Research
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• v.27 no.6
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• pp.295-300
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• 2017

Aluminum-oxide($Al_2O_3$) thin films were deposited by electron cyclotron resonance plasma-enhanced atomic layer deposition at room temperature using trimethylaluminum(TMA) as the Al source and $O_2$ plasma as the oxidant. In order to compare our results with those obtained using the conventional thermal ALD method, $Al_2O_3$ films were also deposited with TMA and $H_2O$ as reactants at $280^{\circ}C$. The chemical composition and microstructure of the as-deposited $Al_2O_3$ films were characterized by X-ray diffraction(XRD), X-ray photo-electric spectroscopy(XPS), atomic force microscopy(AFM) and transmission electron microscopy(TEM). Optical properties of the $Al_2O_3$ films were characterized using UV-vis and ellipsometry measurements. Electrical properties were characterized by capacitance-frequency and current-voltage measurements. Using the ECR method, a growth rate of 0.18 nm/cycle was achieved, which is much higher than the growth rate of 0.14 nm/cycle obtained using thermal ALD. Excellent dielectric and insulating properties were demonstrated for both $Al_2O_3$ films.