• Journal of Welding and Joining
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• v.32 no.3
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• pp.95-101
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• 2014

Joining of grey cast iron by fusion welding has much difficulties for its extremely low ductility and low toughness because of the flake form of the graphite. And the brittle microstructure, i.e. ledeburite may be formed during fusion welding by its rapid cooling rates. By these kinds of welding problem, preheat and post heat treatment temperature must be increased to avoid weld crack or welding problems. In order to avoid these fusion welding problem, friction welding of cast iron was carried out for improving joint soundness, establishing friction welding variables. There is no factor for evaluating friction weldability in continuous drive type friction welding. In this point of view, this study proposed the parameters for calculating friction weld heat input. The results obtained are as follows ; 1. There was a close relationship between tensile strength and flash appearance of friction welded joint. 2. Tensile strength was decreased and flash was severely oxidized as increasing frictional heating time. 3. As increased forging pressure $P_2$, flash had a large crack and tensile strength was decreased. 4. As powdered graphite by rotational frictional force induced flat surface and hindered plastic flow of metal, tensile strength of welded joint was decreased. 5. Heat input for continuous drive type friction welding could be calculated by the factors of $P_1$, $P_2$ and upset distance(${\delta}$).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.35-38
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• 2002

In this paper, the characteristics of channel hot electron (CHE) injection for the write operation in a NOR-type SONOS flash memory with common source line were investigated. The thicknesses of he tunnel oxide, the memory nitride， and the blocking oxide layers for the gate insulator of the fabricated SONOS devices were $34{\AA}$, $73{\AA}$, and $34{\AA}$, respectively. The SONOS devices compared to floating gate devices have many advantages, which are a simpler cell structure, compatibility with conventional logic CMOS process and a superior scalability. For these reasons, the introduction of SONOS device has stimulated. In the conventional SONOS devices, Modified Folwer-Nordheim (MFN) tunneling and CHE injection for writing require high voltages, which are typically in the range of 9 V to 15 V. However CHE injection in our devices was achieved with the single power supply of 5 V. To demonstrate CHE injection, substrate current (Isub) and one-shot programming curve were investigated. The memory window of about 3.2 V and the write speed of $100{\mu}s$ were obtained. Also, the disturbance and drain turn-on leakage during CHE injection were not affected in the SONOS array. These results show that CHE injection can be achieved with a low voltage and single power supply, and applied for the high speed program of the SONOS memory devices.

• Transactions on Electrical and Electronic Materials
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• v.11 no.4
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• pp.155-165
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• 2010

As a promising candidate to replace the conventional floating gate flash memories, polysilicon-oxide-nitride-oxidesilicon (SONOS)-type nonvolatile semiconductor memories have been investigated widely in the past several years. SONOS-type memories have some advantages over the conventional floating gate flash memories, such as lower operating voltage, excellent endurance and compatibility with standard complementary metal-oxide-semiconductor (CMOS) technology. However, their operating speed and date retention characteristics are still the bottlenecks to limit the applications of SONOS-type memories. Recently, various approaches have been used to make a trade-off between the operating speed and the date retention characteristics. Application of high-k dielectrics to SONOS-type memories is a predominant route. This article provides the state-of-the-art research progress of high-k dielectrics applicable to SONOS-type nonvolatile semiconductor memories. It begins with a short description of working mechanism of SONOS-type memories, and then deals with the materials' requirements of high-k dielectrics used for SONOS-type memories. In the following section, the microstructures of high-k dielectrics used as tunneling layers, charge trapping layers and blocking layers in SONOS-type memories, and their impacts on the memory behaviors are critically reviewed. The improvement of the memory characteristics by using multilayered structures, including multilayered tunneling layer or multilayered charge trapping layer are also discussed. Finally, this review is concluded with our perspectives towards the future researches on the high-k dielectrics applicable to SONOS-type nonvolatile semiconductor memories.

• Progress in Medical Physics
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• v.33 no.4
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• pp.108-113
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• 2022

Purpose: Proton therapy has been used for optimal cancer treatment by adapting its Bragg-peak characteristics. Recently, a tissue-sparing effect was introduced in ultrahigh-dose-rate (FLASH) radiation; the high-energy transmission proton beam is considered in proton FLASH therapy. In measuring high-energy/ultrahigh-dose-rate proton beam, Faraday Cup is considered as a dose-rate-independent measurement device, which has been widely studied. In this paper, the feasibility of the simply designed Faraday Cup (Poor Man's Faraday Cup, PMFC) for transmission proton FLASH therapy is investigated. Methods: In general, Faraday cups were used in the measurement of charged particles. The simply designed Faraday Cup and Advanced Markus ion chamber were used for high-energy proton beam measurement in this study. Results: The PMFC shows an acceptable performance, including accuracy in general dosimetric tests. The PMFC has a linear response to the dose and dose rate. The proton fluence was decreased with the increase of depth until the depth was near the proton beam range. Regarding secondary particles backscatter from PMFC, the effect was negligible. Conclusions: In this study, we performed an experiment to investigate the feasibility of PMFC for measuring high-energy proton beams. The PMFC can be used as a beam stopper and secondary monitoring system for transmission proton beam FLASH therapy.

• The Journal of the Convergence on Culture Technology
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• v.9 no.5
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• pp.211-217
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• 2023

This study was conducted for the purpose of analyzing the differences in academic presence and achievement according to the types of e-learning contents development. Content development types were divided into HTML5-based contents, which is interactive contents, and Flash-based contents, which is video presenting type. One group at G high school located in B region learned with HTML5-based contents, and the other group learned with Flash-based contents, and then conducted a survey on the presence and an achievement evaluation. Presence was analyzed through a paired t-test, and the difference in academic achievement was measured through analysis of covariance. As a result of the study, it was found that HTML5-based contents had high levels of presence and academic achievement. Based on the results of the study, the development direction of e-learning contents to be developed in the future was discussed.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.1
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• pp.1-6
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• 2011

We have developed the process of forming one body S-type cantilever probe in the recessed trench for fine-pitched MEMS probe card. The probe (cantilever beam and pyramid tip) was formed using Deep RIE etching and wet etching. The pyramid tip was formed by the wet etching using KOH and TMAH. The process of forming the curved probe was also developed by the wet etching. Therefore, the fabricated probe is applicable for the probe card for DRAM, Flash memory and RF devices tests and probe tip for IC test socket.

• Journal of the Korean Institute of Telematics and Electronics
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• v.15 no.6
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• pp.39-42
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• 1978

Orthorhombic yellow PbO thin films were prepared by evaporating PbO powder in vacuum and annealed in air. The evaporation was carried out by Hashing method. The energy gap, the type of electric conduction and the grain size of these films were 2.63eV, f type, and 670 nm respectively.

• Journal of Digital Contents Society
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• v.11 no.3
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• pp.307-314
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• 2010

The demand for cyber education in Korea is constantly increasing and the need for research on online lecture on contents design that increases the learning effect is rising. In this research, the online lecture contents about the technical information type provided by Korea Cyber University was understood and we researched about the most preferred lecture type and the most effective lecture type in learning among the 1,173 students in Korea Cyber University who participated in this online survey. Also, we analyzed if the students' preference for the lecture type depended on their experience on that lecture type and we studied the students' claims postulated on the interface design of the lecture contents. The most preferred lecture type among students was e-Stream+flash and they answered that multi-media type lectures were the most effective lectures in learning. The majority of the students preferred lecture contents that they have experienced before and preferred the menu on the left side of the page in interface design. Not only the completeness, but the applications in design in lecture contents are also an important factor in online lectures. As the demand for cyber education in Korea is increasing, content design that can increase the academic performance should be further researched.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.260-264
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• 2017

Process variation effect on arch-structured gate stacked array (GSTAR) 3-D NAND flash is investigated. In case of arch-structured GSTAR, a shape of the arch channel is depending on an alignment of photo-lithography. Channel width fluctuates according to the channel hole alignment. When a shape of channel exceeds semicircle, channel width becomes longer, increasing drain current. However, electric field concentration on tunnel oxide decreases because less electric flux converges into a larger surface of tunnel oxide. Therefore, program efficiency is dependent on the process variation. Meanwhile, a radius of channel holes near the bottom side become smaller due to an etch slope. It also affects program efficiency as well as channel width. Larger hole radius has an advantage of higher drain current, but causes degradation of program speed.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.187-189
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• 2012

The embedded systems commonly equip a file system as default to keep data. This file system is mostly constructed with flash memory as the price get lower and the performance get higher. Types of the file system implemented on the flash memory are various according to types of embedded operating systems. By the way, as the embedded systems increasingly depend on the file system, a selection of the file system type of the embedded systems influences the performance of the entire system. This thesis discusses the factors to influence the performance of entire system in construction of file system and selection of the types, and discusses the research results.