• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.4
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• pp.262-269
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• 2005

Semiconductor scientists and engineers ideally desire the faster but the cheaper non-volatile memory devices. In practice, no single device satisfies this desire because a faster device is expensive and a cheaper is slow. Therefore, in this paper, we use heterogeneous non-volatile memories and construct an efficient hierarchy for them. First, a small RAM device (e.g., MRAM, FRAM, and PRAM) is used as a write buffer of flash memory devices. Since the buffer is faster and does not have an erase operation, write can be done quickly in the buffer, making the write latency short. Also, if a write is requested to a data stored in the buffer, the write is directly processed in the buffer, reducing one write operation to flash storages. Second, we use many types of flash memories (e.g., SLC and MLC flash memories) in order to reduce the overall storage cost. Specifically, write requests are classified into two types, hot and cold, where hot data is vulnerable to be modified in the near future. Only hot data is stored in the faster SLC flash, while the cold is kept in slower MLC flash or NOR flash. The evaluation results show that the proposed hierarchy is effective at improving the access time of flash memory storages in a cost-effective manner thanks to the locality in memory accesses.

• Journal of Information Technology Applications and Management
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• v.11 no.2
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• pp.29-43
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• 2004

As the development of an information technique, gradually, mobile device is going to be miniaturized and operates at high speed. By such the requirements, the devices using a flash memory as a storage media are increasing. The flash memory consumes low power, is a small size, and has a fast access time like the main memory. But the flash memory must erase for recording and the erase cycle is limited. JFFS is a representative filesystem which reflects the characteristics of the flash memory. JFFS to be consisted of LSF structure, writes new data to the flash memory in sequential, which is not related to a file size. Mounting a filesystem or an error recovery is achieved through the sequential approach. Therefore, the mounting delay time is happened according to the file system size. This paper proposes a MJFFS to use a multi-checkpoint information to manage a mass flash file system efficiently. A MJFFS, which improves JFFS, divides a flash memory into the block for suitable to the block device, and stores file information of a checkpoint structure at fixed interval. Therefore mounting and error recovery processing reduce efficiently a number of filesystem access by collecting a smaller checkpoint information than capacity of actual files. A MJFFS will be suitable to a mobile device owing to accomplish fast mounting and error recovery using advantage of log foundation filesystem and overcoming defect of JFFS.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.1
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• pp.79-89
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• 2014

It has been an increase in consumers who want a high-capacity and fast speed by the newly diffused mobile device(Smart phones, Ultra books, Tablet PC). As a result, the demand for Flash Memory is constantly increasing. Flash Memory is separated by a NAND-type and NOR-type. NAND-type Flash Memory speed is slow, but price is cheaper than the NOR-type Flash Memory. For this reason, NAND-type Flash Memory is widely used in the mobile market. So Fault Detection is very important for Flash Memory Test. In this paper, Proposed PMBIST for Pattern Test of NAND-type Flash Memory improved Fault detection.

• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.932-935
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• 2002

In this paper, we introduce new FTL(Flash Translation Layer) driver algorithm that tolerate the power off errors. FTL driver is the software that provide the block device interface to the upper layer software such as file systems or application programs that using the flash memory as a block device interfaced storage. Usually, the flash memory is used as the storage devices of the mobile system due to its low power consumption and small form factor. In mobile system, the state of the power supplement is not stable, because it using the small sized battery that has limited capacity. So, a sudden power off failure can be occurred when we read or write the data on the flash memory. During the write operation, power off failure may introduce the incomplete write operation. Incomplete write operation denotes the inconsistency of the data in flash memory. To provide the stable storage facility with flash memory in mobile system, FTL should provide the fault tolerance against the power off failure. SSR (Simple Sector Remapper) is a fault tolerant FTL driver that provides block device interface and also provides tolerance against power off errors.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2010.10a
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• pp.58-61
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• 2010

In this paper, we research the method for HDD I/O Performance improvement by Filter Driver &NAND FLASH Memory. We analyze the effect of the operation of the Device Driver & NAND FLASH Memory and propose the method for the HDD I/O Performance improvement.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.495-498
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• 1998

Mobile computers have restrictions for size, weight, and power consumption that are different from traditional workstations. Storage device must be smaller, lighter. Low power consumed storage devices are needed. At the present time, flash memory device is a reasonable candidate for such device. But flash memory has drawbacks such as bulk erase operation and slow program time. This causes of worse average write performances. This paper suggests a storage method which improves write performance.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.2
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• pp.68-73
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• 2006

We propose a damascene gate FinFET with Si nanocrystals implemented on bulk silicon wafer for low voltage flash memory device. The use of optimized SRON (Silicon-Rich Oxynitride) process allows a high degree of control of the Si excess in the oxide. The FinFET with Si nanocrystals shows high program/erase (P/E) speed, large $V_{TH}$ shifts over 2.5V at 12V/$10{\mu}s$ for program and -12V/1ms for erase, good retention time, and acceptable endurance characteristics. Si nanocrystal memory with damascene gate FinFET is a solution of gate stack and voltage scaling for future generations of flash memory device. Index Terms-FinFET, Si-nanocrystal, SRON(Si-Rich Oxynitride), flash memory device.

• Proceedings of the KIEE Conference
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• 2005.05a
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• pp.191-193
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• 2005

Flash memories are one of best media to support portable computer's storages. However, we need to improve traditional data management scheme due to the relatively slow characteristics of flash operation as compared to RAM memory. In order to achieve this goal, we devise a new scheme called Flash Two Phase Locking (F2PL) scheme for efficient data processing. F2PL improves transaction performance by allowing multi version reads and efficiently handling slow flash write/erase operation in lock management process.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.4 no.3
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• pp.177-182
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• 2003

In the case of the flash memory, various kinds of transistors and the wide range of operation voltage are necessary to achieve the read/write operations. Therefore, the characteristics of transistors are measured in the silicon for the circuit design, and the test vehicle run must be processed. In this study, an efficient design flow is suggested using TCAD tools. The test vehicle is replaced with well-calibrated TCAD simulation. First, the calibration methodology is introduced and tested for flash memory device. The calibration errors are less than 5% of a full chip operation, which is accepted by the designers. The results of the calibration were used to predict I-V curves and model parameter of the various transistors for the design of flash device.

• IEMEK Journal of Embedded Systems and Applications
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• v.10 no.3
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• pp.171-178
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• 2015

Recently NAND flash memory has been found to be the primary cause of low performance in the smart device. NAND flash memory is different from each other the execution time of I/O operations that flash file system is required. Therefore, it is necessary to compare and analyze the flash file system I/O performance for the efficient I/O on smart device. In this paper, it was tested and analyzing the I/O performance of the YAFFS2, JFFS2, UBIFS. Experimental results most read I/O performance is good, but the writing I/O performance is not good. For UBIFS, showed a more good I/O performance compared to other flash file system.