• Proceedings of the KIEE Conference
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• 2005.10b
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• pp.201-203
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• 2005

The best method to study language is to talking with a native speaker. A voice recognition technology can be used to develope a language study machine. SD(Speaker dependant) and SI(speaker independant) voice recognition method is used for the language study machine. MP3 Player. FM Radio. Alarm clock functions are added to enhance the value of the product. The machine is designed with a DSP(Digital Signal Processing) chip for voice recognition. MP3 encoder/decoder chip. FM tumer and SD flash memory card. This paper deals with the application of SD ad SD voice recognition. flash memory file system. PC download function using USB ports, English conversation text function by the use of SD flash memory. LCD display control. MP3 encoding and decoding, etc. The study contents are saved in SD flash memory. This machine can be helpful from child to adult by changing the SD flash memory.

• Journal of the Korea Society of Computer and Information
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• v.22 no.3
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• pp.1-8
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• 2017

In this paper, we propose a new hybrid wear leveling technique for NAND Flash memory, called Time-Aware Wear Leveling (TAWL). Our proposal prolongs the lifetime of NAND Flash memory by using dynamic wear leveling technique which considers the wear level of hot blocks as well as static wear leveling technique which considers the wear level of the whole blocks. TAWL also reduces the overhead of garbage collection by separating hot data and cold data using update frequency rate. We showed that TAWL enhanced the lifetime of NAND flash memory up to 220% compared with previous wear leveling techniques and our technique also reduced the number of copy operations of garbage collections by separating hot and cold data up to 45%.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.1
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• pp.108-114
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• 2004

In this paper we propose the boot system using CF memory card and study the system implementation method. The system that is proposed in this paper basically consist of high performance microprocessor, small amount of program memory and CF memory card. And added LCD module and touch panel for the user interface. This system use the CF memory card and DRAM instead of the Flash memory, so it can reduce the system cost. And system performance is increased because of the system program running in the DRAM.

• Journal of Information Processing Systems
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• v.11 no.3
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• pp.389-405
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• 2015

Most traditional database systems exploit a record-oriented model where the attributes of a record are placed contiguously in a hard disk to achieve high performance writes. However, for read-mostly data warehouse systems, the column-oriented database has become a proper model because of its superior read performance. Today, flash memory is largely recognized as the preferred storage media for high-speed database systems. In this paper, we introduce a column-oriented database model based on flash memory and then propose a new column-aware flash indexing scheme for the high-speed column-oriented data warehouse systems. Our index management scheme, which uses an enhanced $B^+$-Tree, achieves superior search performance by indexing an embedded segment and packing an unused space in internal and leaf nodes. Based on the performance results of two test databases, we concluded that the column-aware flash index management outperforms the traditional scheme in the respect of the mixed operation throughput and its response time.

• Journal of KIISE
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• v.44 no.11
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• pp.1130-1137
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• 2017

The multi-leveling technique that stores multiple bits in a single memory cell has significantly improved the density of NAND flash memory along with shrinking processes. However, because of the side effects of the multi-leveling technique, the average write performance of MLC NAND flash memory is degraded more than twice that of SLC NAND flash memory. In this paper, we introduce existing cross-layer optimization techniques proposed to improve the performance of MLC NAND flash-based storages, and propose a new integration technique that overcomes the limitations of existing techniques by exploiting their complementarity. By fully exploiting the performance asymmetry in MLC NAND flash devices at the flash translation layer, the proposed technique can handle many write requests with the performance of SLC NAND flash devices, thus significantly improving the performance of NAND flash-based storages. Experimental results show that the proposed technique improves performance 39% on average over individual techniques.

• Journal of KIISE:Databases
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• v.34 no.2
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• pp.109-118
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• 2007

Recently, flash memory is used to store data in mobile computing devices such as PDAs, SmartCards, mobile phones and MP3 players. These devices need index structures like the B-tree to efficiently support some operations like insertion, deletion and search. The BFTL(B-tree Flash Translation Layer) technique was first introduced which is for implementing the B-tree on flash memory. Flash memory has characteristics that a write operation is more costly than a read operation and an overwrite operation is impossible. Therefore, the BFTL method focuses on minimizing the number of write operations resulting from building the B-tree. However, we indicate in this paper that there are many rooms of improving the performance of the I/O cost in building the B-tree using this method and it is not practical since it increases highly the usage of the SRAM memory storage. In this paper, we propose a BOF(the B-tree On Flash memory) approach for implementing the B-tree on flash memory efficiently. The core of this approach is to store index units belonging to the same B-tree node to the same sector on flash memory in case of the replacement of the buffer used to build the B-tree. In this paper, we show that our BOF technique outperforms the BFTL or other techniques.

• KIPS Transactions on Computer and Communication Systems
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• v.3 no.5
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• pp.129-140
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• 2014

BIST(Built-in self test) is to detect various faults of the existing memory and BIRA(Built-in redundancy analysis) is to repair detected faults by allotting spare. Also, BISR(Built-in self repair) which integrates BIST with BIRA, can enhance the whole memory's yield. However, the previous methods were suggested for RAM and are difficult to diagnose disturbance that is NAND-type flash memory's intrinsic fault when used for the NAND-type flash memory with different characteristics from RAM's memory structure. Therefore, this paper suggests a BISD(Built-in self diagnosis) to detect disturbance occurring in the NAND-type flash memory and to diagnose the location of fault, and BISR to repair faulty blocks.

• Journal of the Korea Society of Computer and Information
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• v.21 no.5
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• pp.1-10
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• 2016

Magnetic disks have been used for decades in auxiliary storage devices of computer systems. In recent years, the use of NAND flash memory, which is called SSD, is increased as auxiliary storage devices. However, NAND flash memory, unlike traditional magnetic disks, necessarily performs the erase operation before the write operation in order to overwrite data and this leads to degrade the system lifetime and performance of overall NAND flash memory system. Moreover, NAND flash memory has the lower endurance, compared to traditional magnetic disks. To overcome this problem, this paper proposes EPET (Enhanced Prediction and Elapsed Time) wear leveling technique, which is especially efficient to portable devices. EPET wear leveling uses the advantage of PET (Prediction of Elapsed Time) wear leveling and solves long-term system failure time problem. Moreover, EPET wear leveling further improves space efficiency. In our experiments, EPET wear leveling prolonged the first bad time up to 328.9% and prolonged the system lifetime up to 305.9%, compared to other techniques.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.329-329
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• 2012

Mobile 기기로 둘러싸여있는 현대의 환경에서 Flash memory에 대한 중요성은 날로 더해가고 있다. Flash memory의 가격 경쟁력 강화와 사용되는 기기의 소형화를 위해 flash memory의 비례축소가 중요한 문제로 부각되고 있다. 그러나 다결정 실리콘을 플로팅 게이트로 이용하는planar flash memory 소자의 경우 비례 축소 시 short channel effect 와 leakage current, subthreshold swing의 증가로 인한 성능저하와 같은 문제들로 인해 한계에 다다르고 있다. 이를 해결하기 위해 CTF 메모리 소자, nanowire FET, FinFET과 같은 새로운 구조를 가지는 메모리소자에 대한 연구가 활발히 진행되고 있다. 본 연구에서는 22 nm 게이트 크기의 FinFET 구조를 가지는 플래시 메모리소자에서 fin의 두께와 높이의 변화에 따른 메모리 소자의 전기적 특성을 3-dimensional 구조에서 technology computer aided design ( TCAD ) tool을 이용하여 시뮬레이션 하였다. 본 연구에서는 3D FinFET 구조를 가진 플래시 메모리에 대한 시뮬레이션 하였다. FinFET 구조에서 채널영역은 planar 구조와 다르게 표면층이 multi-orientation을 가지므로 본 계산에서는 multi-orientation Lombardi mobility model을 이용하여 계산하였다. 계산에 사용된 FinFET flash memory 구조는 substrate의 도핑농도는 $1{\times}10^{18}$로 하였으며 source, drain, gate의 도핑농도는 $1{\times}10^{20}$으로 설정하여 계산하였다. Fin 높이는 28 nm로 고정한 상태에서 fin의 두께는 12 nm부터 28nm까지 6단계로 나누어서 각 구조에 대한 프로그램 특성과 전기적 특성을 관찰 하였다. 계산결과 FinFET 구조의 fin 두께가 두꺼워 질수록 채널형성이 늦어져 threshold voltage 값이 커지게 되고 subthreshold swing 값 또한 증가하여 전기적 특성이 나빠짐을 확인하였다. 각 구조에서의 전기장과 전기적 위치에너지의 분포가 fin의 두께에 따라 달라지므로써 이로 인해 프로그램 특성과 전기적 특성이 변화함을 확인하였다.

• Journal of KIISE:Computing Practices and Letters
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• v.14 no.6
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• pp.599-603
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• 2008

Flash memory has its unique characteristics: the write operation is much more costly than the read operation and in-place updating is not allowed. In this paper, we analyze how these characteristics of flash memory affect the performance of clustering and non-clustering in record management, and shows that non-clustering is more suitable in flash memory environment, which does not hold in disk environment. Also, we discuss the problems of the existing non-clustering method, and identify considerable designing factors of record management method in flash memory environment.