• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.12
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• pp.558-560
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• 2005

The carbon film was deposited by the electrolysis of methanol solution. Carbon films have been grown on silicon substrates using the method of chemical process. From investigations of the Raman spectroscopy and the FTIR spectroscopy, the carbon film deposited by the electrolysis was identified the hydrogenated carbon film with the porous structure. The carbon film deposited by elctrolysis of methanol was identified as the hydrogenated carbon film with porous structure. Deposition parameters for the growth of the carbon films were current density, methanol liquid temperature. We electrical resistance and surface morphology of carbon films formed various conditions specified by deposition parameters. It was clarified that the high electrical resistance carbon films with smooth surface morphology are grown when a distance between the electrodes is relatively wider. We found that the electrical resistance in the films independent of both current density and methanol liquid temperature. The temperature dependence of the electrical resistance in the low resistance carbon films is different from one obtained in graphite..

• Bulletin of the Korean Chemical Society
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• v.33 no.4
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• pp.1177-1182
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• 2012

The corrosion resistance of 316L stainless steel coated with NiO-YSZ (Ni added yttria stabilized zirconia) was examined in a proton exchange membrane fuel cell (PEMFC) environment. The NiO-YSZ coating was carried out using a sol-gel dip coating method, and the corrosion resistance and interfacial contact resistance (ICR) were determined by the composition and morphology of the NiO-YSZ film. The corrosion resistance increased with increasing Ni content in the NiO-YSZ film, but rapid corrosion was observed when the YSZ film contained more than 15 wt % Ni due to surface cracks. The polarization resistance was improved by several orders of magnitude when 316L stainless steel was coated with a 15 wt % NiO-YSZ film compared to bare 316L. The ICR of the NiO-YSZ film was decreased to that of bare 316L when the YSZ film contained 25 wt % NiO, suggesting the possible application of NiO-YSZ coated stainless steel for a bipolar plate.

• Journal of the Semiconductor & Display Technology
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• v.18 no.2
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• pp.29-31
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• 2019

The ZTO/p-Si thin film was produced and investigated for tunneling phenomena caused by the interface characteristics of the depletion layer. ZTO thin film was deposited and heat treated to produce barrier potentials by the depletion layer. The negative resistance characteristics were shown in the thin film of ZTO heat treated at $100^{\circ}C$, and the insulation properties were the best. Current decreased in the negative voltage direction by nonlinear show key characteristics, and current decreased in tunneling phenomenon by negative resistance in the positive voltage direction. Heat treated at $100^{\circ}C$, the ZTO thin film has increased barrier potential in the areas of the depletion layer and therefore the current has increased rapidly. The current has decreased again as we go beyond the depletion layer. Therefore, tunneling can be seen to make insulation better. In the ZTO thin film heat treated at $70^{\circ}C$ without tunneling, leakage current occurred as current increased at positive voltage. Therefore, tunneling effects by negative resistance were found to enhance insulation properties electrically.

• Korean Journal of Materials Research
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• v.21 no.3
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• pp.174-179
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• 2011

Ultra-thin aluminum (Al) and tin (Sn) films were grown by dc magnetron sputtering on a glass substrate. The electrical resistance R of films was measured in-situ method during the film growth. Also transmission electron microscopy (TEM) study was carried out to observe the microstructure of the films. In the ultra-thin film study, an exact determination of a coalescence thickness and a continuous film thickness is very important. Therefore, we tried to measure the minimum thickness for continuous film (dmin) by means of a graphical method using a number of different y-values as a function of film thickness. The raw date obtained in this study provides a graph of in-situ resistance of metal film as a function of film thickness. For the Al film, there occurs a maximum value in a graph of in-situ electrical resistance versus film thickness. Using the results in this study, we could define clearly the minimum thickness for continuous film where the position of minimum values in the graph when we put the value of Rd3 to y-axis and the film thickness to x-axis. The measured values for the minimum thickness for continuous film are 21 nm and 16 nm for sputtered Al and Sn films, respectively. The new method for defining the minimum thickness for continuous film in this study can be utilized in a basic data when we design an ultra-thin film for the metallization application in nano-scale devices.

• The Korean Journal of Ceramics
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• v.4 no.3
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• pp.183-188
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• 1998

Gas sensitizations of tin oxide film were investigated by measuring the change of film resistance in various gas atmospheres such as $N_2,\; O_2,\; H_2O$. The main test sample, polycrystalline $SnO_2$ film containing small Sb as a dopant was prepared by a sputtering technique and showed a long term stability in base resistance and thus, in gas sensitivity. The adsorption of oxygen on the film surface as a type of $(O_{ads})$ at the temperature of around $300^{\circ}C$ played important roles in sensor operating mechanism. The roles were ⅰ) the increase of base resistance in ambient air, which consequently lead to high sensitivity and ⅱ) the promotion of fast recovery. The reaction of hydrogen gas with the already adsorbed $(O_{ads})$ ions was considered as a decisive sensitization mechanism of tin oxide film. However, the dissociation of hydrogen molecules on film surface, by direct donation of electron to film also took a major part in the sensitization. The effect of humidity on gas sensitization was found to be negligible at the sensor operating temperature of around $300^{\circ}C$.

• Corrosion Science and Technology
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• v.21 no.4
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• pp.290-299
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• 2022

Anodizing is an electrochemical surface treatment method conferring corrosion resistance and durability by forming a thick anodization film on the metal surface. Aluminum has a long service life and high thermal conductivity and formability, as well as excellent corrosion resistance. Aluminum 3003 alloy has improved formability, strength, and corrosion resistance due to the addition of a small amount of manganese. However, corrosion occurs in seawater and environments polluted with corrosion-inducing substances, which reduce corrosion resistance. Therefore, it is necessary to artificially form a thick anodized film to improve corrosion resistance. In this study, the anodization treatment time was 4 minutes, and voltages of 10 V, 20 V, 30 V, 40 V, 50 V, 60 V, 70 V, 80 V, 90 V, and 100 V were applied. The thickness and pore size of the oxide film increased according to the applied voltage. A barrier film was formed under voltage conditions from 10 V to 50 V, and a porous film was formed under voltage conditions from 60 V to 100 V. After anodizing, coating was applied. Wettability and corrosion resistance were observed before and after coating according to the surface shape and thickness of the oxide film.

• Proceedings of the IEEK Conference
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• 2004.08c
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• pp.628-635
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• 2004

The characteristic of thin film resistor with low TCR( temperature coefficient of resistance ) and high precision are studied. The thin film resistor for 1/4W was fabricated and characteristic of these resistors was investigated. The fabricated device had the thickness of $2.48{\leqq}$ and the resistivity of $0.27{\omega}mm$. The electrical characteristic was evaluated by HP 4339B and 4284A instruments with HP l6339A. The profile of trimmed structure was also measured by non contact interferometer. The change of resistance and TCR increased with increasing roughness and resistance. To reduce the effect of stress annealing treatment was performed in the range of 563 to 623 K after trimming. The characteristic was improved after annealing. It is expected the fabricated device can be useful for high precision and low TCR. Fabricated thin film resistor has average deviation of resistance less than $0.35{\%}$ and TCR within 60.60ppm/K.

• Journal of Mechanical Science and Technology
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• v.19 no.6
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• pp.1338-1346
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• 2005

Effects of thermal contact resistance between heater and susceptor, susceptor and graphite board in a MOCVD reactor on temperature distribution and film growth rate were analyzed. One-dimensional thermal resistance model considering thermal contact resistance and heat transfer area was made up at first to find the temperature drop at the surface of graphite board. This one-dimensional model predicted the temperature drop of 18K at the board surface. Temperature distribution of a reactor wall from the three-dimensional computational fluid dynamics analysis including the gap at the wafer position showed the temperature drop of 20K. Film growth rates of InP and GaAs were predicted using computational fluid dynamics technique with chemical reaction model. Temperature distribution from the three-dimensional heat transfer calculation was used as a thermal boundary condition to the film growth rate simulations. Temperature drop due to the thermal contact resistance affected to the GaAs film growth a little but not to the InP film growth.

• Journal of the Korean institute of surface engineering
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• v.49 no.3
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• pp.252-259
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• 2016

In order to form an aluminum-doped zinc oxide (AZO) transparent electrode film on a polyethylene terephthalate (PET) substrate used for a flexible display substrate, the AZO transparent electrode was produced at low temperature without substrate heating. Even though the produced electrode showed characteristic optical transmittance of 90 % (at 550 nm) and sheet resistance within $100{\Omega}/sq$, cracks occurred 10 minutes after loading applied 2 mm radius of curvature, and the sheet resistance increased linearly. An insertion layer of ZrCu was formed between the AZO film and the PET substrate to suppress the generation of cracks on the AZO film. It was verified that the crack was not generated 30 minutes after the loading of 2 mm radius of curvature, and no increase in sheet resistance was recorded. There was also not cracks in the dynamic bending test of 4 mm radius, but surface resistance was slightly increased. As a result, the ZrCu insertion film improved the interfacial adhesion between the substrate and AZO film layer without increasing sheet resistance and decreasing transmittance.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.530-530
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• 2012

Many practical applications of carbon nanotubes(CNTs) have been proposed and there have been attempts to utilize CNT films as transparent electrodes for solar cells and displays. Our group has considered the use of the CNT film as a thin film heater (TFH) and proposed it for the first time and reported the thermal behavior of the TFH made of single walled CNTs. However, due to the relatively high electrical resistance of the CNT film, using the TFH in application areas requiring high heat flux has been a difficult problem. To overcome this obstacle, we adopted a 'branch electrodes' concept to increase the film conductance dramatically. If two branch electrodes are inserted into a TFH whose original electrical resistance is R, the total resistance will be reduced to R/9. Because of the increased aspect ratio, the resistance of each segmented TFH will be reduced to R/3. Furthermore, since they are connected in parallel, the total resistance reduces to R/9. This could be extended to n branch electrodes, and the total resistance of the film will be reduced to R/(n+1)2, if the resistance of electrodes are negligibly small. We fabricated the heaters with different number of branch electrodes. The number of branch electrodes of the fabricated heaters are 0, 2, 4, 8 and their electrical resistance are 101.4, 39.5, 20.0, $15.4{\Omega}$, respectively. We applied 20V to each heater and monitored the temperature variations. We could achieve high heating temperature even with low voltage supply. This technique could be applied to relevant industrial applications which need high power film heater.