The Korean Journal of Ceramics

The Korean Ceramic Society (한국세라믹학회)
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Gas Sensitization of Tin Oxide Film by Resistance

  • Chwa, Sang-Ok (Department of Inorganic materials Engineering, Pusan National University) ;
  • Park, Hee-Chan (Department of Inorganic Materials Engineering, Pusan National University) ;
  • Kim, Kwang-Ho (Department of Inorganic Materials Engineering, Pusan National University)
  • Published : 1998.09.01
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Abstract

Gas sensitizations of tin oxide film were investigated by measuring the change of film resistance in various gas atmospheres such as $N_2,\; O_2,\; H_2O$. The main test sample, polycrystalline $SnO_2$ film containing small Sb as a dopant was prepared by a sputtering technique and showed a long term stability in base resistance and thus, in gas sensitivity. The adsorption of oxygen on the film surface as a type of $(O_{ads})$ at the temperature of around $300^{\circ}C$ played important roles in sensor operating mechanism. The roles were ⅰ) the increase of base resistance in ambient air, which consequently lead to high sensitivity and ⅱ) the promotion of fast recovery. The reaction of hydrogen gas with the already adsorbed $(O_{ads})$ ions was considered as a decisive sensitization mechanism of tin oxide film. However, the dissociation of hydrogen molecules on film surface, by direct donation of electron to film also took a major part in the sensitization. The effect of humidity on gas sensitization was found to be negligible at the sensor operating temperature of around $300^{\circ}C$.

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