• Journal of Magnetics
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• v.18 no.1
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• pp.39-42
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• 2013

We studied the structural and electrical properties of $SrRuO_3$ thin films grown on $SrTiO_3$ (110) substrate. High resolution X-ray diffraction measurement of the grown film showed 1) very sharp peaks for $SrRuO_3$ film with a very narrow rocking curve with FWHM = $0.045^{\circ}$ and 2) coherent growth behavior having the same in-plane lattice constants of the film as those of the substrate. The resisitivity data showed good metallic behavior; ${\rho}$ = 63(205) ${\mu}{\Omega}{\cdot}cm$ at 5 (300) K with a residual resistivity ratio of ~3. The observed kink at ${\rho}(T)$ showed that the ferromagnetic transition temperature was ~10 K higher than that of $SrRuO_3$ thin film grown on $SrTiO_3$ (001) substrate. The observed rather lower RRR value could be partially due to a very small amount of Ru vacancy generally observed in $SrRuO_3$ thin films grown by PLD method and is evident in the larger unit-cell volume compared to that of stoichiometric thin film.

• Journal of Sensor Science and Technology
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• v.28 no.1
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• pp.23-29
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• 2019

A copper tetracumylphenoxy phthalocyanine (CuPccp) thin film was formed on an organic insulator film by Langmuir-Blodgett (LB) deposition for gas sensor fabrication. To increase the reproducibility of film transfer, stearyl alcohol was used as a transfer promoter. The structural properties of the CuPccp layers were optically monitored through attenuated total reflection and polarization-modulated ellipsometry techniques. The average thickness of a single layer of the CuPccp LB film was measured to be 2.5 nm. Despite the role of the transfer promoter, the stability of the layer transfer was not sufficient to ensure homogeneity of the LB film. This was probably due to the presence of aggregates in the molecular structure of the CuPccp LB film. Nevertheless, copper phthalocyanine polymorphism can be greatly suppressed by the LB arrangement, which appears to contribute to the improvement of electrical conductivity. The p-type semiconductor characteristics were confirmed by Hall measurements from the CuPccp LB films.

• Korean Journal of Soil Science and Fertilizer
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• v.49 no.2
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• pp.115-124
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• 2016

The objectives of this study were to evaluate the soil fertility about plastic film house, upland, and orchard in Gyeongbuk Province, Korea. The surface chemical properties of soil samples were investigated every 4 year from 2000 year at upland, 2001 year at orchard, and 2002 year at plastic film house. During 12 year's monitoring, mean soil pH was increased by 0.7 and 0.8 pH unit from pH 5.7 in upland and orchard, respectively, 0.5 pH unit from pH 6.5 in plastic film house. About 50% of all the field samples occupied within the recommended pH range (pH 6-7). Although soil organic matter (SOM) was gradually increased by about $10g\;kg^{-1}$ for 12 years, 40% of orchard, 49% of plastic film house, and 77% of upland soil samples were still below the 3% SOM. The mean concentration of available phosphate for 12 years in upland, orchard, and plastic film house were 530, 600, and $760mg\;kg^{-1}$, respectively. The relative frequencies exceeding the recommended available phosphate range ($300-550mg\;kg^{-1}$) were 43%, 53%, and 66% at upland, orchard, and plastic film house soils, respectively. $NH_4OAc$ exchangeable $K^+$ of upland, orchard, and plastic film house in the last soil test were 0.8, 0.9, and $1.6cmol_c\;kg^{-1}$, respectively. The relative frequencies above the recommended K level were 56% and 70% of orchard and plastic film house soil samples, respectively. The levels of crop nutrients except exchangeable Ca and Mg in upland soil were tended to increase gradually in the three fields. Exchangeable Mg, EC, available phosphate, organic matter and soil pH could be used as principle components to differentiate the chemical properties of three land fields. This analysis revealed that the soil fertility was affected by cropping method and field management, although additional research is needed to assess the importance of management on soil chemical properties and many fields indicate an opportunity for improvement in fertilizer management.

• Corrosion Science and Technology
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• v.2 no.5
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• pp.212-218
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• 2003

Electronic properties of passive films formed on Ti at film formation potentials $(E_f)V_{SCE}$ in pH 8.5 buffer solution and in an artificial seawater were examined through the photocurrent measurement and Mott-Schottky analysis. The passive films formed on Ti in pH 8.5 buffer solution exhibited a n-type semiconductor with a band gap energys $(E_g);E_g^{n=2}=3.4$ eV for nondirect electron transition, and $E_g^{n=0.5}=3.7$ eV for direct electron transition. These band gap values were almost same as those for the passive films formed in artificial seawater, indicating that chloride ion ($Cl^-$ in solution did not affect the electronic structure of the passive film on Ti. $E_g$ for passive films formed on Ti were found to be greater than those ($E_g^{n=0.5}=3.1$ eV, $E_g^{n=2}=3.4$) for a thermal oxide film formed on Ti in air at $400^{\circ}C$. The disorder energy of passive film, determined from the absorption tail of photocurrent spectrum, was much greater than that for the thermal oxide film farmed on Ti in air at $400^{\circ}C$. The greater $E_g$ and the higher disorder energy for the passive film compared with those for the thermal oxide fIlm suggest that the passive film on Ti exhibited more disorded structure than the thermal oxide film. The donor density (about $2.4{\times}10^{20}cm^{-3}$) for the passive film formed in artificial seawater was greater than that (about $20{\times}10^{20}cm^{-3}$) formed in pH 8.5 buffer solution, indicating that $Cl^-$ increased the donor density for the passive film on Ti.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.33 no.5
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• pp.418-422
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• 2000

The tensile properties and color of fish meal film under various processing conditions were measured to obtain basic data for biodegradable Alaska Pollack meal protein isolate (APMPI) film. The tensile strength and the elongation of APMPI film were increased with casting volume of APMPI solution but those of APMPI film were weakened with the addition of glycerol amount as well as reduction of pH values. In case of adding various plasticizer, the tensile strength of film was increased in order as follows: sorbitol, polyethylene glycol and glycerol. The elongation was increased in order of polyethylene glycol, sorbitol and glycerol. The tensile strength of film increased with increment of APMPI concentration, but the elongation of film was not affected by APMPI concentration. The tensile strength of APMPI film was decreased with the increment of relative humidity but its elongation was increased with the increment of relative humidity, Not only lightness and yellowness of film added with sorbitol but also redness and total different color of film added with polyethylene glycol showed the highest value in Hunter color system.

• Journal of Surface Science and Engineering
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• v.50 no.3
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• pp.147-154
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• 2017

This research was conducted to investigate the electrochemical properties of the thin air-formed oxide film-covered AZ31 Mg alloy. Native air-formed oxide films on AZ31 Mg alloy samples were prepared by knife-abrading method and the changes in the electrochemical properties of the air-formed oxide film were investigated in seven different electrolytes containing the following anions $Cl^-$, $F^-$, $SO{_4}^{2-}$, $NO_3{^-}$, $CH_3COO^-$, $CO{_3}^{2-}$, and $PO{_4}^{3-}$. It was observed from open circuit potential (OCP) transients that the potential initially decreased before gradually increasing again in the solutions containing only $CO{_3}^{2-}$ or $PO{_4}^{3-}$ ions, indicating the dissolution or transformation of the native air-formed oxide film into new more protective surface films. The Nyquist plots obtained from electrochemical impedance spectroscopy (EIS) showed that there was growth of new surface films with immersion time on the air-formed oxide film-covered specimens in all the electrolyte. The least resistive surface films were formed in fluoride and sulphate baths whereas the most protective film was formed in phosphate bath. The potentiodynamic polarization curves illustrated that passive behaviour of AZ31 Mg alloy under anodic polarization appears only in $CO{_3}^{2-}$, or $PO{_4}^{3-}$ ions containing solutions and at more than $-0.4V_{Ag/AgCl}$ in $F^-$ ion containing solution.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1260-1261
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• 2008

Aluminium doped zinc oxide (ZnO:Al) thin film has emerged as one of the most promising transparent conducting electrode in flat panel displays(FPD) and in photovoltaic devices since it is inexpensive, mechanically stable, and highly resistant to deoxidation. In this paper ZnO:Al thin film was deposited on the polyethylene terephthalate(PET) substrate by the capacitively coupled r.f. magnetron sputtering method. Wide ranges of bias voltage, -30V${\sim}$45V, was applied to the growing films as an additional energy instead of substrate heating, and the effect of positive and negative bias on the film structure and electrical properties of ZnO:Al films was studied and discussed. The results showed that a bias applied to the substrate during sputtering contributed to the improvement of electrical properties of the film by attracting ions and electrons in the plasma to bombard the growing films. These bombardments provided additional energy to the growing ZnO film on the substrate, resulting in significant variations in film structure and electrical properties. The film deposited on the PET substrate at r. f. discharge power of 200 W showed the minimum resistivity of about $2.4{\times}10^{-3}{\Omega}-cm$ and a transmittance of about 87%.

• Textile Coloration and Finishing
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• v.24 no.1
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• pp.69-78
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• 2012

This paper surveys the physical properties of the MWNT dispersion solution dispersed with the three types of solvents and of the polyurethane composite film for improvement of mechanical properties and electrical characteristics of PU/MWNT composite film. For this purpose, the MWNT dispersed solution was mixed with three types of solvent such as IPA, MEK and Toluene and then mixed with polyurethane (100part) with variation of loading content (0, 10, 20, 30, 40, 50 part) of MWNT dispersed solution in the ultrasonic wave dispersion apparatus. And eighteen PU/MWNT composite films were prepared as specimens. The various physical properties of these PU/MWNT films were measured and discussed with the loading content of three types of MWNT dispersed solutions. The highest absorbancy among the three types of dispersed solutions was shown in the IPA/MWNT solution. But the absorbancy of PU/MWNT films was not same as the solution. The low electrical surface and volume resistivity of PU/MWNT film were shown at the condition of 20 and 10 parts loading of IPA/MWNT dispersed solution, respectively. The low triboelectricity of PU/MWNT film was shown at the condition of above 30part loading of IPA/MWNT dispersed solution. The breaking strength and strain of PU/MWNT film prepared with IPA/MWNT dispersed solution were decreased with increasing loading content of IPA/MWNT from 10 to 40 parts. The maximum breaking strength and breaking strain according to the dispersion solution were shown on the IPA/MWNT dispersed solution. The uniform dispersion of PU/MWNT film according to the loading content of MWNT solution was shown by surface image analysis on the films dispersed with IPA.

• Journal of the Korean Chemical Society
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• v.60 no.3
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• pp.169-176
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• 2016

In a borate buffer solution, the growth kinetics and the electronic properties of passive film on aluminum were investigated, using the potentiodynamic method, chronoamperometry, and multi-frequency electrochemical impedance spectroscopy. The corrosion of aluminum was heavily influenced by the degree of oxygen concentration because of the increasing reduction current. The oxide film formed during the passivation process of aluminum has showed the electronic properties of n-type semiconductor, which follow from the Mott-Schottky equation. It was found out that the passive film (Al(OH)₃) of Al formed in the low electrode potential changes to Al₂O₃ while the electrode potential increases. The growth kinetics data as measured by chronoamperometry suggests a mechanism in which the growth of the film of Al₂O₃ is determined by field-assisted transport of ions through the film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03a
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• pp.21-21
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• 2010

(Ba,Sr)$TiO_3$ (BST) thin film with a perovskite structure has potential for the practical application in various functional devices such as nonvolatile-memory components, capacitor, gate insulator of thin-film transistors, and electro-optic devices for display. Normally, the BST thin films derived from sol-gel and sputtering are amorphous or partially crystalline when processed below $600^{\circ}C$. For the purpose of integrating BST thin film directly into a Si-based read-out integrated circuit (ROIC), it is necessary to process the BST film below $400^{\circ}C$. The microstructural and electrical properties of low-temperature crystallized BST film were studied. The BST thin films have been fabricated at $350^{\circ}C$ by UV-assisted rapidly thermal annealing (RTA). The BST films are in a single perovskite phase and have well-defined electrical properties such as high dielectric constant, low dielectric loss, low leakage current density, and high breakdown voltage. Photoexcitation of the organics contained in the sol-gel-derived films by high-intensity UV irradiation facilitates elimination of the organics and formation of the single-crystalline phase films at low temperatures. The amorphous BST thin film was transformed to a highly (h00)-oriented perovskite structure by high oxygen pressure processing (HOPP) at as low as $350^{\circ}C$. The dielectric properties of BST film were comparable to (or even better than) those of the conventionally processed BST films prepared by sputtering or post-annealing at temperature above $600^{\circ}C$. When external pressure was applied to the well-known contractive BST system during annealing, the nucleation energy barrier was reduced; correspondingly, the crystallization temperature decreased. The UV-assisted RTA and HOPP, as compatible with existing MOS technology, let the BST films be integrated into radio-frequency circuit and mixed-signal integrated circuit below the critical temperature of $400^{\circ}C$.