• Food Science and Biotechnology
• /
• v.14 no.1
• /
• pp.108-111
• /
• 2005

To improve water-resistance and physical properties of sodium alginate film, effects of sodium alginate and plasticizer concentrations, divalent cation types and concentrations, and immersion time of films into divalent cation solutions on sodium alginate films were evaluated, based on elongation strength (ES), elongation rate (E), water vapor permeability (WVP), and water solubility (WS). Film made from 1.5% sodium alginate solution (w/w) had low WVP and WS, which are optimal characteristics for application of film preparation. Addition of plasticizer increased E and WS. Less than 2% $CaCl_2$ addition and 15min immersion time reduced WVP, WS, and E significantly (p<0.05). Sodium alginate films treated with $CuCl_2$, and $ZnCl_2$ solutions had lower WVP and WS, whereas $MgCl_2$ had no influence on improving water resistance of films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1996.11a
• /
• pp.234-237
• /
• 1996

The amorphous chalogenide semiconductors are new material in semiconductor physics. Their properties, especially electronic and optical properties are main motives for device application. Amorphous As$_{10}$Ge$_{15}$ Te$_{75}$material has the stable ac conductivity at high frequency and the dc memory switching property. At higher frequency than 10MHz, ac conductivity of As$_{10}$Ge$_{15}$ Te$_{75}$ thin film is much higher than below frequency and independent of temperature and frequency. If the dc voltages are applied between edges of thin film, one can see the dc memory switching phenomenon, in other words the dc conductivity increases quite a few of magnitude after the threshold voltage is applied. Using the stable ac conductivity at high frequency and the increase of conductivity after dc memory switching, As$_{10}$Ge$_{15}$ Te$_{75}$thin film is considered as new material for microwave switch devices.vices.es.vices.

• Journal of the Korean Ceramic Society
• /
• v.24 no.2
• /
• pp.170-178
• /
• 1987

Changes of the properties of PECVD-SiN film with the variation of deposition process parameters were investigated and optimum process parameters were determined. The refractive index of the film increased with increasing substrate temperature and pressure, and decreasing rf-power, NH3/SiH4 gas ratio and total gas flow. BHF etch rate and deposition rate show a decreasing tendency with increasing refractive index. The step coverage of the film was not affected much by deposition rate and pressure, but improved apparently with increasing rf-power and NH3/SiH4 gas ratio. Also the optimum process parameters were determined by considering the characteristic properties as well as thickness uniformity of films. The refractive index of the film deposited under this condition was 2.06.

• Journal of the Korean Magnetics Society
• /
• v.16 no.1
• /
• pp.98-101
• /
• 2006

Electron transport properties of nanostructured Pb thin film, consisting of grains, have been studied. Nanostructured thin films were fabricated on a substrate held at low temperature and their thicknesses were less than 10nm. While temperature of the film increased from 1.3 K to room temperature, the change in normal state sheet resistance has been measured. As the annealing temperature varies, the normal state sheet resistance shows a non-monotonic and irreversible change. Such behavior can be understood with the Pb grain growth due to annealing of the film.

• Elastomers and Composites
• /
• v.28 no.4
• /
• pp.274-282
• /
• 1993

Resorcinol-tannin-formaldehyde-latex(RTFL) adhesive was prepared to bond SBR to nylon in reinforced rubber composites. A key factor of adhesive contributes to the adhesion strength between SBR and nylon was the toughness of adhesive itself. Although the stiffness and strength of adhesive film decreased slightly with increasing level of tannin substitution for resorcinol in a standard RFL adhesive, the maximum toughness of adhesive film, which showed yield behavior and high dissipative capacity, was obtain by 60% tannin substitution. However, a marked softening and reduction in toughness occurred at sufficiently high substitution. Also, the adhesive film, which was heat-treated to simulate cure, showed higher strength than the unheated film. Thus, the properties of tannin containing adhesives could be optimized by using 40/60 weight ratio of the resorcinol/tannin in RTFL adhesive composition as well as heat treatment of adhesive film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.2
• /
• pp.178-183
• /
• 2004

PBT thin film was known to be a representative for the FeRAM devices because of its good ferroelectric proporties and the ease in fabricating the thin film. However, there have been several problems such as polarization fatigue and leakage current in memory devices with a PZT thin film. In this study, Sm-dolled PZT thin films were fabricated by the so1-gel method, and their ferroelectric and dielectric proportrics were compared as a function of Sm content. We investigated the effect of the Sm dopant on structural and electrical properties of PZT film. Sm-doped PZT thin films on the Pt/Ti/SiO$_2$/Si substrates have been prepared by a sol-gel method. The remanent polarization and coercive field decreased with increasing the concentration of Sm. The dielectric constant and dielectric loss decreased with Increasing Sm content. Sm-doped PZT thin films showed improved fatigue characteristics compared to the undoped PZT thin film.

• Proceedings of the KIEE Conference
• /
• 1987.07a
• /
• pp.561-564
• /
• 1987

The deposition and reflow properties or BPSG film deposited by APCVD was characterized by variation of each process parameter. As deposition temperature is increased higher, deposition rate is decreased. Maximum deposition rate of BPSG film is obtained in higher 02/Hyride ratio than CVD Oxide or PSG. BPSG film shows stable dielectric properties and we obtained good planarization effect at lower reflow temperature in case of BPSG film than PSG film.

• Journal of information and communication convergence engineering
• /
• v.2 no.3
• /
• pp.149-152
• /
• 2004

In this paper, we present the film bulk acoustic resonator (FBAR) devices fabricated by considering the effects of annealing temperature on zinc oxide (ZnO) film growth characteristics. In order to determine the annealing temperature and annealing time at which the ZnO film can have good material properties, the several resonators containing ZnO layers were fabricated and annealed at various temperatures from $27^{\circ}C\;to\;300^{\circ}C$ in Ar gas ambient. The effects of the annealing temperature and annealing time on the ZnO film properties were comprehensively studied in order to further improve the resonance characteristics of FBAR resonators.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.404-405
• /
• 2007

Tin-doped indium thin film is outstanding material among transparent Conductive Oxide (TCO) materials. ITO thin films show a low electrical resistance(<$10^{-4}\;[{\Omega}{\cdot}m]$) and high transmittance(>80%) in the visible range. ITO thin films usually have been deposited on the glass substrate. In order to apply flexible display, the substrate should have the ability to bend and be deposited without substrate heat. Also properties of ITO thin film depend on what kind of substrate. In this study, we prepared ITO thin film on the polycarbonate (PC) substrate by using Facing Target Sputtering (FTS) system. Before deposition of ITO thin film, PC substrate took plasma surface treatment. The electrical and surface properties of as-deposited thin films were investigated by Hall Effect measurement, UV/VIS spectrometer and the surface property of substrate is investigated by Contact angle measurement.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.52-52
• /
• 2010

Amorphous carbon films have a variety of potential applications. In most such applications film properties are crucial and highly dependent on the film growth conditions. We here investigate the atomic structure of the films, which is generated at various incidence angles, using the classical molecular dynamics. Varying incidence angle of the deposited carbon atoms, different level of sp hybridization and porosity of the film are captured in our model. As the incidence angle becomes glancing, subplantation of the deposited carbon in vertical direction is significantly reduced, rather bouncing back of the incident carbon with slight modification of surface structure is mainly occurred at the early stage of the film growth. As the surface becomes rougher, shadowing effect at these glancing incidences also becomes more significant, which tends to cause asymmetrical and columnar structure. We describe incidence angle dependence of the evolution of the atomic structure of the film and its corresponding properties.