• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.04a
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• pp.206-209
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• 2003

The purpose of AR and HR coating is acquire the very low reflection rate and the high reflection rate through the deposition of a thin film using the refraction ofmaterial. Basically if the high refractive material and the low refractive material are chosen and the condition for the experiment is determined, then we solve theproject with the optical design and multi thin film coating. First of all, we choose $SiO_2$for the low refractive material and $TiO_2$ for the high refractive material and apply Sputtering System easy to control the refraction rate and excellent in reconstruction to the equipment of thin film multiplication. For the control of the refraction rate and growth rate we modify RF Power and the ratio of Gas(Ar:O2), And we use Ellipsometer for estimation and analysis of the refraction rate and growth rate and AFM&SEM for the analysis of surface and component.

• Journal of Korean Vacuum Science & Technology
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• v.1 no.1
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• pp.38-44
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• 1997

Epitaxial growth of SiC films on Si(111) substrates without carbonization was carried out n the temperature range of 900-100$0^{\circ}C$ under high vacuum conditions by single source chemical vapor deposition (CVD) of 1,3-disilabutane (H$_3$SiCH$_2$SiH$_2$$CH_3$). The monocrystalline nature of the films was confirmed by XRD, RHEED and cross-sectional TED. Cross-sectional TEM image indicated that no void exists and the boundary is clear and smooth at the SiC-Si(111) interface. RBS and AES analyses also showed that the films are stoichiometric and homogeneous in depth, From the results, this single source growth techniqe of using 1,3-disilabutane has been found suitable and effective for epitaxial growth of stoichiometric SiC on Si(111) without carbonization at temperatures below 100$0^{\circ}C$.

• Proceedings of the Ginseng society Conference
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• 1974.09a
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• pp.137-146
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• 1974

This experiment was on the purpose to study the effects of different shading of Mulching treatments on the quality and yield of ginseng root. This experiment were conducted at Mei-Feng for one year, from July, 1972 to July, 1973. The variety been used was introduced Korea Panax ginsvng. Three different Shading of Mulching treatments have been studied. The results were summerized as follows: 1. The growth of ginseng plant is good under around 4,300 Lux of light intensity. Fig . showed the shadow treatment of straw had a better effect than that of black or grey plastic film. The differences between treatments were significant. 2. The adequate soil temperature for ginseng culture was in the range of $16-18^{\circ}C$. Fig 2. showed that there were significant differences among treatments, of which the straw shadow treatment had the best effect. 3. The growth of ginseng plant was greatly affected wth various shadow treatments. Fig 1. showed both straw and black plastic film treatments had a better effects on growth of stem, leaf area and leaf numbers. 4. Fig. 2. 3. 4. 5 indicated there were distingished differences among all treatments. The straw and black plastics film mulching treatments had a better effects on root length, root diameter, root weight and leaf weight than the grey plastic film. 5. The amount of plant alkaloids and panacene content had related to the shadow treatment, as showed in Fig. 6 and 7 that straw shadow treatment had greatly increased the procuction of plant alkaloids and panacene content. 6. The quality and yield of roots of ginseng greatly affected by different shading of mulching treatments.

• Journal of the Korean Chemical Society
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• v.58 no.1
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• pp.9-16
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• 2014

In a borate buffer solution, the growth kinetics and the electronic properties of passive film on nickel were investigated, using the potentiodynamic method, chronoamperometry, and single- or multi-frequency electrochemical impedance spectroscopy. The oxide film formed during the passivation process of nickel has showed the electronic properties of p-type semiconductor, which follow from the Mott-Schottky equation. It was found out that the passive film ($Ni(OH)_2$) of Ni formed in the low electrode potential changes to NiO and NiO(OH) while the electrode potential increases.

• Journal of the Korean Chemical Society
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• v.61 no.6
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• pp.320-327
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• 2017

In a borate buffer solution, the growth kinetics and the electronic properties of passive film on cobalt were investigated, using the potentiodynamic method, chronoamperometry, and single-frequency electrochemical impedance spectroscopy. It was found out that the unstable passive film ($Co(OH)_2$) and CoO of Co formed in the low electrode potential changes to $Co_3O_4$ and CoOOH while the electrode potential increases. And the composition of the passive films was varied against the applied potential and oxidation time. The oxide film formed during the passivation process of cobalt has showed the electronic properties of p-type semiconductor, which follow from the Mott-Schottky equation.

• Electrical & Electronic Materials
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• v.16 no.9
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• pp.63.2-64
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• 2003

Epitaxial yttrium-stabilized HfO$_2$ thin films were deposited on p-type (100) Si substrates by pulsed laser deposition at a relatively lower substrate temperature of 550. Transmission electron microscopy observation revealed a fixed orientation relationship between the epitaxial film and Si; that is, (100)Si.(100)HfO$_2$ and [001]Si/[001]HfO$_2$. The film/Si interface is not atomically flat, suggesting possible interfacial reaction and diffusion, X-ray photoelectron spectrum analysis also revealed the interfacial reaction and diffusion evidenced by Hf silicate and Hf-Si bond formation at the interface. The epitaxial growth of the yttrium stabilized HfO$_2$ thin film on bare Si is via a direct growth mechanism without involoving the reaction between Hf atoms and SiO$_2$ layer. High-frequency capacitance-voltage measurement on an as-grown 40-A yttrium-stabilized HfO$_2$ epitaxial film yielded an dielectric constant of about 14 and equivalent oxide thickness to SiO$_2$ of 12 A. The leakage current density is 7.0${\times}$ 10e-2 A/$\textrm{cm}^2$ at 1V gate bias voltage.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.4
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• pp.140-144
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• 2004

CdTe thin films were grown on GaAs (100) substrates by hot wall epitaxy method. From the XRD measurements, it was found that CdTe/GaAs (100) film was grown as a single crystals with the different from growth plane of (III), and growth rate of CdTe thin films was found to be 30 $\AA/sec$ by SEM. To acquire a high quality CdTe thin film, the optimum temperature for the source and substrate are found to be $500^{\circ}C$ and $320^{\circ}C$, respectively, which was checked by PL.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.06a
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• pp.275-280
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• 1997

We have investigated the deposition characteristics of (Ni0.8Fe0.2)20Ag80 thin films as a function of chamber pressure and nitrogen flow rate with scanning electron microscopy(SEM), atomic force microscopy(AFM), XRD and $\alpha$-step. The deposition rate of these film is decreased with increasing the chamber pressure and the nitrogen flow rate. With raising the chamber pressure, the growth mode of thin film is changed from island growth to columnar one, which is probably due to energy of atom. Contrary, the nitrogen flow rate is raised, growth mode is changed from columnar to island one. According to the XRD patterns, the preferred orientation is inhibited as the nitrogen flow rate is kept above 10 sccm, but that is nearly independent on the chamber pressure. When the chamber pressure decrease or the nitrogen flow rate increase, phase separation into permoally and silver is occured.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.1
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• pp.38-44
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• 2008

Contiuous c-oriented zeolite MFI films $(<35{\mu}m)$ were prepared by hydrothermal secondary growth of silicalite-1 seed crystal in the surface of alumina porous substrate and silicon substrate. The supported films were characterized with scanning electron microscopy and X-ray diffraction. Effect of substrate surface roughness were investigated and a mechanism for c-oriented film formation and characteristic dom-like defects formation which is observed after seeding growth was discussed. The roughness of substrate plays an important role.

• Food Science of Animal Resources
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• v.43 no.6
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• pp.1128-1149
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• 2023

In order to extend the shelf life of refrigerating raw lamb by inhibiting the growth of microorganisms, preventing the oxidation of fat and protein, and absorbing the juice outflow of lamb during storage, an active packaging system based on plastic/gelatin bilayer film with essential oil was developed in this study. Three kinds of petroleum-derived plastic films, oriented polypropylene (OPP), polyethylene terephthalate, and polyethylene, were coated with gelatin to make bilayer films for lamb preservation. The results showed significant improvement in the mechanical properties, oxygen, moisture, and light barriers of the bilayer films compared to the gelatin film. The OPP/gelatin bilayer film was selected for further experiments because of its highest acceptance by panelists. If the amount of juice outflow was less than 350% of the mass of the gelatin layer, it was difficult for the gelatin film to separate from lamb. With the increase in essential oil concentration, the water absorption capacity decreased. The OPP/gelatin bilayer films with 20% mustard or 10% oregano essential oils inhibited the growth of bacteria in lamb and displayed better mechanical properties. Essential oil decreased the brightness and light transmittance of the bilayer films and made the film yellow. In conclusion, our results suggested that the active packaging system based on OPP/gelatin bilayer film was more suitable for raw lamb preservation than single-layer gelatin film or petroleum-derived plastic film, but need further study, including minimizing the amount of essential oil, enhancing the mechanical strength of the gelatin film after water absorption.