Journal of the Korean Chemical Society (대한화학회지)

Korean Chemical Society (대한화학회)
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Growth Kinetics and Electronic Properties of Passive Film of Cobalt in Borate Buffer Solution

Borate 완충용액에서 코발트 산화피막의 생성 과정과 전기적 성질

  • Park, Hyunsung (Department of Chemistry, College of Natural Science, Hankuk University of Foreign Studies) ;
  • Kim, Younkyoo (Department of Chemistry, College of Natural Science, Hankuk University of Foreign Studies)
  • 박현성 (한국외국어대학교 자연과학대학 화학과) ;
  • 김연규 (한국외국어대학교 자연과학대학 화학과)
  • Received : 2017.05.17
  • Accepted : 2017.09.22
  • Published : 2017.12.20
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Abstract

In a borate buffer solution, the growth kinetics and the electronic properties of passive film on cobalt were investigated, using the potentiodynamic method, chronoamperometry, and single-frequency electrochemical impedance spectroscopy. It was found out that the unstable passive film ($Co(OH)_2$) and CoO of Co formed in the low electrode potential changes to $Co_3O_4$ and CoOOH while the electrode potential increases. And the composition of the passive films was varied against the applied potential and oxidation time. The oxide film formed during the passivation process of cobalt has showed the electronic properties of p-type semiconductor, which follow from the Mott-Schottky equation.

Borate 완충용액에서 Co의 부동화 피막의 생성과정(growth kinetics)과 부동화 피막의 전기적 성질을 변전위법, 대 시간 전류법 그리고 단일 주파수 전기화학적 임피던스 측정법으로 조사하였다. 불안정 부동화가 일어나는 낮은 전극전위에서 생성되는 Co의 부동화 피막 $Co(OH)_2$와 CoO로 구성되었으며, 전극전위가 증가하면 산화피막의 조성이 $Co_3O_4$, CoOOH로 변화되었다. 또한 산화피막의 조성은 전극전위와 산화시간에 따라 변하였다. 이 때 생성되는 산화피막은 Mott-Schottky 식이 적용되는 p-형 반도체 성질을 보였다.

Keywords

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