• Journal of Surface Science and Engineering
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• v.32 no.3
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• pp.303-306
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• 1999

On the effect of substrate bias at first stage of diamond synthesis at lower substrate temperature(approximately 673K) using microwave plasma CVD and effect of reaction gas system for the bias enhanced nucleation were studied. The reaction gas was mixture of methane and hydrogen or carbon monoxide and hydrogen. The nucleation density of applied bias -150V using $CH_4-H_2$ reaction gas system, significantly higher than that of $C-H_2$ reaction gas system. When the $CH_4-H_2$ reaction was used, nucleation density was increased because of existence of SiC as a interface for diamond nucleation. By use of this negative bias effect for fabrication of CVD diamond film using two-step diamond growth without pre-treatment, fabrication of the diamond film consist of diamond grains $0.2\mu\textrm{m}$ in diameter was demonstrated

• Progress in Superconductivity and Cryogenics
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• v.20 no.4
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• pp.20-25
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• 2018

Niobium nitride (NbN) superconducting thin films with the thickness of 100 and 400 nm have been deposited on the surfaces of silicon oxide/silicon substrates using a sputtering method. Their superconducting properties have been evaluated in terms of the transition temperature, critical magnetic field, and critical current density. In addition, the NbN films were patterned in a line with a width of $10{\mu}m$ by a reactive ion etching (RIE) process for their characterization. This study proves the applicability of the standard complementary metal-oxide-semiconductor (CMOS) process in the fabrication of superconducting thin films without considerable degradation of superconducting properties.

• Applied Chemistry for Engineering
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• v.21 no.3
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• pp.343-348
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• 2010

The surface of low density polyethylene (LDPE) film was oxyfluorinated under different reaction conditions to introduce hydroperoxide groups and change surface characteristics. Hydroperoxide functional groups created by oxyfluorination were used as active sites for graft polymerization with hydrophobic monomer, acryl amide (AM), and hydrophilic monomer, methyl methacrylate (MMA) to carry out the second modification of the LDPE film surface. The surface properties of the OFPE films and grafted OFPE films were characterized by 1,1-diphenyl-2-picrylhydrazyl (DPPH) radical scavenging method, ATR-IR, contact angle measurement and DSC. From the results of DPPH method, the amount of hydroperoxide groups on the oxyfluorinated LDPE film continuously increased as the total pressure in the oxyfluorination and the partial pressure of fluorine gas increased. The water contact angle and surface free energy measurements showed that hydrophilic liquid (water) contact angle on LDPE film surface decreased with hydrophilic AM grafting and hydrophobic liquid (methylene diiodide) contact angle on LDPE film surface decreased with hydrophobic MMA grafting. These were attributed to AM or MMA monomer grafting and the wettability of LDPE filmsurface to hydrophilic and hydrophobic liquids were improved.

• Journal of Electrochemical Science and Technology
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• v.10 no.4
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• pp.424-432
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• 2019

Planar BiVO₄ and 3 wt% Mo-doped BiVO₄ (abbreviated as Mo:BiVO₄) film were prepared by the facile spin-coating method on fluorine doped SnO₂(FTO) substrate in the same precursor solution including the Mo precursor in Mo:BiVO₄ film. After annealing at a high temperature of 450℃ for 30 min to improve crystallinity, the films exhibited the monoclinic crystalline phase and nanoporous architecture. Both films showed no remarkably discrepancy in crystalline or morphological properties. To investigate the effect of surface passivation exploring the Al₂O₃ layer, the ultra-thin Al₂O₃ layer with a thickness of approximately 2 nm was deposited on BiVO₄ film using the atomic layer deposition (ALD) method. No distinct morphological modification was observed for all prepared BiVO₄ and Mo:BiVO₄ films. Only slightly reduced nanopores were observed. Although both samples showed some reduction of light absorption in the visible wavelength after coating of Al₂O₃ layer, the Al₂O₃ coated BiVO₄ (Al₂O₃/BiVO₄) film exhibited enhanced photoelectrochemical performance in 0.5 M Na₂SO₄ solution (pH 6.5), having higher photocurrent density (0.91 mA/㎠ at 1.23 V vs. reversible hydrogen electrode (RHE), briefly abbreviated as V_RHE) than BiVO₄ film (0.12 mA/㎠ at 1.23 V_RHE). Moreover, Al₂O₃ coating on the Mo:BiVO₄ film exhibited more enhanced photocurrent density (1.5 mA/㎠ at 1.23 V_RHE) than the Mo:BiVO₄ film (0.86 mA/㎠ at 1.23 V_RHE). To examine the reasons, capacitance measurement and Mott-Schottky analysis were conducted, revealing that the significant degradation of capacitance value was observed in both BiVO₄ film and Al₂O₃/Mo:BiVO₄ film, probably due to degraded capacitance by surface passivation. Furthermore, the flat-band potential (V_FB) was negatively shifted to about 200 mV while the electronic conductivities were enhanced by Al₂O₃ coating in both samples, contributing to the advancement of PEC performance by ultra-thin Al₂O₃ layer.

• Corrosion Science and Technology
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• v.5 no.4
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• pp.141-148
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• 2006

The chemical composition and the semiconducting properties of the passive films formed on Alloy 690 in various film formation conditions were investigated by XPS, photocurrent measurement, and Mott-Schottky analysis. The XPS and photocurrent spectra showed that the passive films formed on Alloy 690 in pH 8.5 buffer solution at ambient temperature, in air at $400^{\circ}C$, and in PWR condition comprise $Cr_2O_3$, $Cr(OH)_3$, ${\gamma}-Fe_2O_3$, NiO, and $Ni(OH)_2$. The thermally grown oxide in air and the passive film formed at high potential (0.3 $V_{SCE}$) in pH 8.5 buffer solution were highly Cr-enriched, whereas the films formed in PWR condition and that formed at low potential (-0.3 $V_{SCE}$) in pH 8.5 buffer solution showed relatively high Ni content and low Cr content. The Mott-Schottky plots exhibited n-type semiconductivity, inferring that the semiconducting properties of the passive films formed on Alloy 690 in various film formation conditions are dominated by Cr-substituted ${\gamma}-Fe_2O_3$. The donor density, i.e., concentration of oxygen vacancy, was measured to be $1.2{\times}10^{21}{\sim}4.6{\times}10^{21}cm^{-3}$ and lowered with increase in the Cr content in the passive film.

• Transactions of the Korean Society of Mechanical Engineers
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• v.16 no.1
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• pp.87-94
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• 1992

Film boiling heat transfer characteristics in liquid-liquid systems are studied experimentally. Liquid gallium as a heating liquid, n-pentane, freon-113, and ethanol are used as boiling liquids. In gallium-n-pentane and gallium-freon-113 systems the minimum film boiling point occurred at higher temperature than those observed in copper-boiling liquid systems. However MFB point occurred almost at the same temperature for the case of ethanol. This difference are due to the effects of contact angle and interfacial agitations in gallium-boiling liquid systems. Film boiling heat transfer rate, for the gallium-boiling liquid systems considered in this work, found to be approximately 10% higher than those in copper-boiling liquid systems, whose main cause is believed to be gallium-boiling liquid interfacial agitations affected by the density ratio between gallium and boiling liquid.

• Journal of radiological science and technology
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• v.15 no.2
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• pp.17-23
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• 1992

Simple chest radiography is the most frequently performed examination in radiologic practice. However, with transmitted dose through chest which has the problem of wide variations in absorption, conventional Film/Screen Combinations Method make it difficult to delineate lung field mediastinum & cardia portion and subdiaphragmatic structures. In order to overcome this problem, we have been tried several methods as follows. High Kilovoltage Technique, Rare Earth Screen/Wide Lattitude Film, Use of Compensating Filter and Digital Beam Attenuator and recently Insigh System has been developed. In this paper, we'd like to discuss Insight film through apperciation by measuring the difference of contrast. In order to evaluate insight film. We have done experiments using Insight System with Simple Phase, Picker 550. We could get an result which was able to overcome the limitted dynamic range of conventional Film/Screen System remarkably.

• Journal of radiological science and technology
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• v.2 no.1
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• pp.95-99
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• 1979

When the ${\gamma}-ray$ of average energy 375KeV emitted by Ir-192 is exposed to each film through lead foil with various thickness, the film sensitivity will be different according to the thickness of lead foil and film type. The results on the study, different density and sensitive ratio appeared depending on exposed time and film type, but was made on the following common points. 1. The effect of film sensitivity by the front lead foil showed rapid increase up to the thickness of more or less 0.03mm, and the thicker lead foil was decreased more in the thickness of about $0.05{\sim}0.09mm$. 2. The effect of film sensitivity by the back lead foil was increased up to around of $0.03{\sim}0.08mm$ thickness, the maximum sensitivity was obtained in the thickness of more than $0.03{\sim}0.08mm$ without any change in the above effect. 3. The sensitivity of front lead foil was higher than that of back lead foil in thin lead foil with about 0.127mm thickness, but the sensitivity of back lead foil was higher than that of front lead foil when thickness became thicker.

• Journal of radiological science and technology
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• v.1 no.1
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• pp.61-67
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• 1978

Recently, Demands of automatic X-ray film processors are increasing more and more at general hospitals and private clinics, but various troubles because of incorrect control were found out. Authors have researched to find out the function and activity of automatic X-ray film processor for 70 days with Kodak X-OMAT processor, and results obtained were as follows; 1. Automatic X-ray film processor have an advantage to conduct the rapid treatment of X-ray film processing, but incorrect handling of developing and fixing agents were brought about a great change in contrast and optical density of X-ray film pictures. 2. About 10,000 X-ray films could be finished by same developing and fixing solution without exchanging any other solutions in automatic X-ray film processor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.22-25
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• 2002

In this paper, we deposited MgO buffer layer on p-type (100)Si substrate in the condition of substrate temperature 400$^{\circ}C$, working gas ratio Ar:O$_2$=80:20, RF Power 50W, working pressure 10mtorr, and the thickness of the film was about 300${\AA}$. Then we deposited Ba$\sub$0.5/Sr$\sub$0.5/TiO$_3$ thin film using RF Magnetron sputtering method on the MgO/Si substrate in various RF power of 25W, 50W, 75W. The film deposited in 50W showed the best crystalline from the XRD measurement. To know the electrical properties of the film, we manufactured Al/BSTMgO(300${\AA}$)/Si/Al structure capacitor. In the result of I-V measurement, The leakage current density of the capacitor was lower than 10$\^$-7/A/$\textrm{cm}^2$ at the range of ${\pm}$150kV/cm. From C-V characteristics of the capacitor, can calculate the dielectric constant and it was 305. Finally we deposited BST thin film on bare Si substrate and (100)MgO substrate in the same deposition condition. From the comparate of the properties of these samples, we found the properties of BST thin film which deposited on MgO/Si substrate were better than on bare Si substrate and similar to on MgO substrate.