• Applied Chemistry for Engineering
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• v.23 no.2
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• pp.169-175
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• 2012

In the study, the effects of $130{\sim}150^{\circ}C$ annealing condition and 1~10 wt% isopropylphenyl diphenyl phosphate (IPPP) on crystallization behavior and flame retardancy of a full name (PLA) film were determined. The crystallization kinetics of PLA films with adding 1, 5, and 10 wt% IPPP at $140^{\circ}C$ were higher than those at 130 and $150^{\circ}C$. The average crystallinity and crystallite size of PLA film with 1 wt% IPPP were 21.3% and 24.8 nm, respectively. With an increasing IPPP content, the crystallinity of PLA film increased and the crystallite size decreased. The burning rate lowered with an increasing IPPP content as well.

• Journal of the Korean Ceramic Society
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• v.46 no.6
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• pp.673-678
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• 2009

The effect of MgO buffer layer on the structural properties of sputter-grown ZnO thin film was investigated. Sapphire (0001) and Si (100) substrate were used for the growth and MgO buffer layer was inserted between ZnO thin film and the substrate. X-ray diffraction pattern indicated that enhanced crystallinity in the ZnO thin film grown was achieved by inserting very thin MgO buffer layer, regardless of the substrate type. The strain in the ZnO thin film could also be controlled by the insertion of the MgO buffer layer, and tendency of the strain was strongly dependent on the substrate type.

• Journal of the Korean Vacuum Society
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• v.9 no.1
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• pp.42-47
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• 2000

The amorphous vanadium oxide thin films for thin-film rechargeable lithium batteries were fabricated by r.f. reactive sputtering at room temperature. As the experimental parameter, oxygen partial pressure was varied during sputtering. At high oxygen partial pressures(>30%), the as-deposited films, constant current charge/discharge characteristics were carried out in 1M $LiPF_6$, EC:DMC+1:1 liquid electrolyte using lithium metal as anode. The specific capacity of amorphous $V_2O_5$ after 200cycles of operation at room temperature was higher compared to crystalline $V_2O_5$. The amorphous vanadium oxide thin film and crystalline film showed about 60$\mu$Ah/$\textrm{cm}^2\mu\textrm{m}$ and about 38$\mu$Ah/$\textrm{cm}^2\mu\textrm{m}$, respectively. These results suggest that the battery capacity of the thin film vanadium oxide cathode strongly depends on the crystallinity.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.401-405
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• 1999

Reflective silver films with high quality were prepared on polyester substrate by using sputter deposit on techniques. Best reflectivity thin films of silver were produced with process parameters of $10^{-6}$ Torr as base pressure, 50 W as R.F. power, 5 mTorr as working pressure, and 10 sccm as Ar flow rate. Being deposited with an R.F. power of 50 W, Ag films revealed the highest 96.3 % reflectance as illuminated with a light of 700 nm wavelength. The adhesion of sample films showed as high as 14 to $20{\;}kg/\textrm{cm}^2$, which is suitable for industrial purposes. Their film crystallinity and orientation resulted in the planes of (111) and (200) for the growth with a preferred orientation of <111>, in general. The cross-sections of thin film specimens showed columnar structures. It is noted that columns became coarsened and less dense as R.F. power increased, resulting in a low reflectivity for the product film.

• Korean Journal of Metals and Materials
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• v.47 no.6
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• pp.378-382
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• 2009

We investigated the effects of deposition conditions on the fabrication of $Fe_{3}O_{4}$ thin films using a reactive DC magnetron sputtering at room temperature. The structural, electrical, and magnetic properties of Fe oxide films dependence on the film thickness, oxygen flow rate, and the substrate crystallinity were also studied. We have successfully fabricated $Fe_{3}O_{4}$ film with thickness of about 10 nm under optimal reactive sputtering conditions. The saturation magnetization, resistivity, and Verwey transition of the $Fe_{3}O_{4}$ film were298 emu/cc, $4.0{\times}10^{-2}{\Omega}cm$, and 125 K, respectively.

• Korean Chemical Engineering Research
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• v.50 no.3
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• pp.582-587
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• 2012

In this paper, it was studied on the crystallization characteristics of PLA film by adding ammonium phosphate (APP) as a nucleation agent. Crystallinity and crystallite size of PLA film were determined by Scherrer equation. Crystallization rate constant of PLA film was calculated through Avrami equation. Film samples in the study were prepared by two steps. PLA films were prepared by adding 1, 5, and 10 wt%, respectively, at first and was secondly annealed at 130, 140, and $150^{\circ}C$. Crystallinity of pure PLA film was average 4.6% and those of PLA film with adding 1, 5, and 10 wt% APP were 12.2, 47.7, and 50.0%, respectively. Crystallite size of PLA film was average 28.0 nm and those of PLA film with adding 1, 5, and 10 wt% APP were 26.8, 24.0, and 19.0 nm, respectively. Crystallization rate constants of PLA film with 1 wt% APP were 2.12, 3.86, and 0.27 by annealing at 130, 140, and $150^{\circ}C$, respectively, where was higher than pure PLA film and those with adding 5 and 10 wt% APP, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 1995.06a
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• pp.78-78
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• 1995

• Proceedings of the Korean Vacuum Society Conference
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• 1995.06a
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• pp.88-88
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• 1995

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.192.2-192
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• 2000

• Journal of the Semiconductor & Display Technology
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• v.19 no.3
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• pp.100-105
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• 2020

Recently, as display and semiconductor devices have been miniaturized and highly integrated, there is a demand for optimization of the structural characteristics of the thin film accordingly. The sputtering device has the advantage of stably obtaining a desired thin film depending on the material selected for the target. However, due to the structural characteristics of the sputtering equipment, the structural characteristics of the film may be different depending on the incidence angle of the sputtering target material to the substrate. In this study, the characteristics of the thin film material according to the scattering angle of the target material and the incidence position of the substrate were studied to find the optimization design rule of the sputtering equipment. To this end, a Si thin film of 1 ㎛ or less was deposited on the Si(100) substrate, and then the microstructure, reflectance, surface roughness, and thin film crystallinity of the thin film formed for each substrate location were investigated. As a result of the study, it was found that as the sputter scattering angle increased and the substrate incident angle decreased, the gap energy along with the surface structure of the thin film increased from 1.47 eV to 1.63 eV, gradually changing to a non-conductive tendency.