• Proceedings of the KIEE Conference
• /
• 2005.11a
• /
• pp.6-8
• /
• 2005

The optical and electrical properties of indium tin oxide (ITO) thin films deposited at room temperature can be substantially enhanced by adopting a two-step process. In the first step, the films (50 nm thick) were grown by pulsed laser deposition (PLD) on glass substrate at room temperature and quickly annealed at $400^{\circ}C$ in nitrogen ambient for 1 minute by using rapid thermal annealing method. The process was completed by additional deposition (150 nm thick) on annealed film at room temperature. High quality ITO films grown by two-step process at room temperature could be obtained with the resistivity of $3.02{\times}10^{-4}{\Omega}cm$, the carrier mobility of 32.07 $cm^2/Vs$, and the transparency above 90 % in visible region mainly due to the enhancement of the film crystallinity and the increase of grain size.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.04b
• /
• pp.17-17
• /
• 2009

We report the invention of a direct growth method termed On-Film Formation of Nanowire (OFF-ON) for making high-quality single-crystal nanowires, i.e. Bi and $Bi_2Te_3$, without the use of conventional templates, catalysts, or starting materials. We have used the OFF-ON technique to grow single crystal semi-metallic Bi and compound semiconductor $Bi_2Te_3$ nanowires from sputtered Bi and BiTe films after thermal annealing, respectively. The mechanism for nanowire growth is stress-induced mass flow along grain boundaries in the polycrystalline films. OFF-ON is a simple but powerful method for growing perfect single-crystal semi-metallic and compound semiconductor nanowires of high aspect ratio with high crystallinity that distinguishes it from other competitive growth approaches that have been developed to date. Our results suggest that Bi and $Bi_2Te_3$ nanowires grown by OFF-ON can be an ideal material system for exploring their unique thermoelectric properties due to their high-quality single crystalline and high conductivity, which have consequence and relevance for high-efficiency thermoelectric devices.

• Proceedings of the KIEE Conference
• /
• 1995.11a
• /
• pp.335-337
• /
• 1995

In this study, $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramic thin films were fabricated from an alkoxide-based by Sol-Gel method. $Pb(Zr_{0.52}Ti_{0.48})O_3$ stock solution was made and spin-coated on the $Pt/SiO_2/Si$ substrate at 4000[rpm] for 30[sec]. Coated specimens were dried at 400[$^{\circ}C$] for 10 [min]. The coating process was repeated 4 times and then heat-treated at 500$\sim$800[$^{\circ}C$], 1 hour. The final thickness of the thin films were about 3000[A]. The crystallinity and microstructure of the thin films were investigated for varing the sintering condition. The ferroelectric perovskite' phases precipitated under the sintering of 700[$^{\circ}C$] for 1 hours. In the $Pb(Zr_{0.52}Ti_{0.48})O_3$ thin films sintered at 700[$^{\circ}C$] for 1 hour, dielectric constant and dielectric loss were 2133, 2.2[%] at room temperature, respectively. $Pb(Zr_{0.52}Ti_{0.48})O_3$ thin film capacitors having good dielectric and electrical properties are expected for the application to the dielectric material of DRAM.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.9
• /
• pp.745-750
• /
• 2000

The (S $r_{0.85}$C $a_{0.15}$) Ti $O_3$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/ $SiO_2$/Si) using RF sputtering method at various deposition temperature. The crystallinity of SCT thin films were increased with increase of deposition temperature in the temperature range of 200~500[$^{\circ}C$]. Also, the composition of SCT thin films were closed to stoichiometry (1.080~1.111 in A/B ratio). V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature. The conduction mechanism of the SCT thin films observed in the temperature range of 25~100[$^{\circ}C$] can be divided into four regions with different mechanism by the increasing current. The region I below 0.8[MV/cm]shows the ohmic conduction. The region II between 0.9~2[MV/cm] is in proportion to J∝ $E^{1.5}$ , the region III between 2~4[MV/cm] can be explained by the Child’s law, and the region IV above 4[MV/cm]is dominated by the tunneling effect.ect.

• Journal of the Korean Applied Science and Technology
• /
• v.25 no.3
• /
• pp.341-346
• /
• 2008

Cellulose nanofibers from microfibril cellulose (MFC) was prepared by hydrobromic acid (HBr) treatment at different concentrations. Polyvinyl alcohol (PVA) composite films at various loading level of nanofibers were manufactured by a film casting method. The analysis of degree of polymerization (DP), crystallinity ($X_c$) and molecular weight ($M_w$) of cellulose after acid treatment was conducted. The mechanical and thermal properties of the cellulose nanofibers reinforced PVA films were characterized using tensile tests and thermogravimetric analysis (TGA). The DP and $M_w$ of MFC by HBr hydrolysis considerably decreased, but $X_c$ showed no significant change. After acid hydrolysis, the diameter of cellulose nanofibers was in the range of 100 to 200 nm. The thermal stability of the films was steadily improved with the increase of nanofiber loading. There was a significant increase in the tensile strength of PVA composite films with the increase in MFC loading. Finally, 5 wt.% nanofiber loading exhibited the highest tensile strength and thermal stability of PVA composite films.

• Journal of the Korean Vacuum Society
• /
• v.22 no.1
• /
• pp.20-25
• /
• 2013

ZnO:Al thin films deposited by RF magnetron sputtering were post-annealed and the electrical and optical properties of ZnO:Al thin films were investigated before and after anneling. We confirmed that the ZnO:Al thin film was affected by post-annealing temperature. As post-annealing temperature increases, crystallinity and transmittance in visible area (400~800 nm) of ZnO:Al thin films decreased. While sheet resistance of thin films increased sharply with increasing to $400^{\circ}C$. This result is due to reduce of carrier concentration caused by absorption of $O_2$ or $N_2$ at surface of thin film.

• Journal of the Korean Vacuum Society
• /
• v.11 no.2
• /
• pp.97-102
• /
• 2002

Highly-oriented ZnO thin films has been successfully deposited on Si(100) by metal organic chemical vapor deposition(MOCVD) at $250^{\circ}C$~$400^{\circ}C$ We report on the structural properties of ZnO thin film at various temperatures and at various ratios of the he and $O_2$ gas flow rates. The crystallinity of the thin films was improved and the surface smoothness decreased with the increase of the growth temperature. In x-ray diffraction analysis with respect to ZnO(0002) peak, the full width at half maximum (FWHM) of $0.4^{\circ}$ was achieved at $400^{\circ}C$.

• Current Photovoltaic Research
• /
• v.3 no.3
• /
• pp.97-100
• /
• 2015

The kesterite $Cu_2ZnSnSe_4$ (CZTSe) thin film solar cells were synthesized by selenization of sputtered Cu/Sn/Zn metallic precursors on Mo coated soda lime glass substrate in Ar atmosphere. Cu/Sn/Zn metallic precursors were deposited by DC magnetron sputtering process with 30 W power at room temperature. As-deposited metallic precursors were placed in a graphite box with Se pellets and selenized using rapid thermal processing furnace at various temperature ($480^{\circ}C{\sim}560^{\circ}C$) without using a toxic $H_2Se$ gas. Effects of Selenization temperature on the morphological, crystallinity, electrical properties and cell efficiency were investigated by field emission scanning electron microscope (FE-SEM) and X-ray diffraction (XRD), J-V measurement system and solar simulator. Further details about effects of selenization temperature on CZTSe thin films will be discussed.

• Journal of the Korean Ceramic Society
• /
• v.38 no.9
• /
• pp.777-781
• /
• 2001

$LiCoO_{2}$ thin films have received attention as cathodes of thin film microbatteries in these days. In this study, $LiCoO_{2}$ thin films are fabricated by a sol-gel spin coating method followed by a post-annealing process. The thermal decomposition behaviour of precursor is investigated by TG/DTA analysis. The change of crystallinity, microstructure and electrochemical properties of final films as the drying temperature changes are also studied by XRD, SEM and galvanostatic charge/discharge cycling test. The relationship between the discharge capacity and the drying temperature are intensively investigated in this work.

• Transactions on Electrical and Electronic Materials
• /
• v.11 no.4
• /
• pp.186-189
• /
• 2010

Nano-sized MgO single crystal powders have recently been reported to emit ultraviolet by stimulation of electrons in a vacuum. In this study, nanocrystalline MgO powders were applied to a xenon plasma flat fluorescent lamp (FFL) for a liquid crystal display backlight to improve its emission efficiency through the extra ultraviolet from the nano-MgO crystals. For comparison, a MgO nano-thin film was applied directly on the phosphors inside a lamp panel through e-beam evaporation. Adding MgO nano-crystal powders to the phosphors improved the luminance and efficiency of FFLs by around 20% and MgO nano-crystal coverage of 40% of the phosphor provided the best FFL emission characteristics; however, application of MgO thin film to the phosphors degraded the emission characteristics, even compared to FFLs without MgO. This was due to insufficient ultraviolet stimulation of the phosphors and the crystallinity and low secondary electron coefficient of the MgO.