Journal of the Korean Vacuum Society (한국진공학회지)

The Korean Vacuum Society (한국진공학회)
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Optical and Electrical Properties of Sputtered ZnO:Al Thin Films with Various Annealing Temperature

후열처리에 따른 스퍼터된 ZnO:Al 박막의 전기적, 광학적 특성

  • Kim, D.K. (Advanced Development Group, Samsung Electronics Co. Ltd.) ;
  • Kim, H.B. (Department of Electronic and Information Engineering, Cheongju University)
  • Received : 2012.11.06
  • Accepted : 2013.01.14
  • Published : 2013.01.30
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Abstract

ZnO:Al thin films deposited by RF magnetron sputtering were post-annealed and the electrical and optical properties of ZnO:Al thin films were investigated before and after anneling. We confirmed that the ZnO:Al thin film was affected by post-annealing temperature. As post-annealing temperature increases, crystallinity and transmittance in visible area (400~800 nm) of ZnO:Al thin films decreased. While sheet resistance of thin films increased sharply with increasing to $400^{\circ}C$. This result is due to reduce of carrier concentration caused by absorption of $O_2$ or $N_2$ at surface of thin film.

RF magnetron sputtering 법을 이용하여 증착된 ZnO:Al 박막을 열처리하여 열처리 전 후 ZnO:Al 박막의 전기적, 광학적 특성을 연구하였다. 열처리 온도에 따라 ZnO:Al 박막의 특성이 많이 영향 받음을 확인하였다. 열처리 온도가 증가함에 따라 ZnO:Al 박막의 결정성과 가시광선 영역(400~800 nm)에서 투과도는 감소함을 보였다. 반면, 박막의 비저항은 $400^{\circ}C$로 열처리 온도가 증가함에 따라 급격히 증가하였다. 이는 박막 표면에 $O_2$ 또는 $N_2$가 흡착하여 캐리어 농도 감소에 의한 것으로 판단된다.

Keywords

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