• 한국전기전자재료학회논문지
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• 제14권10호
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• pp.785-791
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• 2001

High dielectric (Ba, Sr) TiO$_3$ thin films were etched in an inductively coupled plasma (ICP) as a function of Cl$_2$/Ar mixing ration. Under Cl$_2$(20)/Ar(80), the maximum etch rate of the BST films was 400 $\AA$/mim and selectivities of BST to Pt and PR were obtained 0.4 and 0.2, respectively. Etching products were redeposited on the surface of BST and resulted in varying the nature of crystallinity. Therefore, we investigated the etched surface of BST by x-ray photoelectron spectroscopy (XPS) atomic force microscopy (AFM) and x-ray diffraction (XRD). From the result of XPS analysis, we found that residues of Ba-Cl and Ti-Cl bonds remained on the surface of the etched BST for high boiling point. The morphology of the etched surfact was analyzed by AFM. A smoothsurface(roughness ~2.8nm) ws observed under Cl$_2$(20)/Ar(80), rf power of 600 W, dc bias voltage of -250 V and pressure of 10 mTorr. This changed the nature of the crystallinity of BST. From the result of XRD analysis, the crystallinities of the etched BST film under Ar only and Cl$_2$(20)/Ar(80) were maintained as similar to as-deposited BST. However, intensity of BST(100) orientation under Cl$_2$ only plasma was abruptly decreased. This indicated that CI compounds were redeposited on the etched BST surface and resulted in changed of the crystallinity of BST during the etch process.

• 마이크로전자및패키징학회지
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• 제26권4호
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• pp.113-118
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• 2019

In this study, we investigated the growth of single-crystallinity α-Ga₂O₃ thin films on c-plane sapphire substrates using halide vapor pressure epitaxy. We also found the optimal growth conditions to suppress the phase transition of α-Ga₂O₃. Our results confirmed that the growth temperature and partial pressure of the reactive gas greatly influenced the crystallinity. The optimal growth temperature range was about 460~510℃, and the α-Ga₂O₃ thin films with the highest crystallinity were obtained at a III/VI ratio of 4. The thickness and surface morphology of the thin films was observed by scanning electron microscopy. The film thickness was 6.938 ㎛, and the full width at half maximum of the ω-2θ scan rocking curve was as small as 178 arcsec. The optical band gap energy obtained was 5.21 eV, and the films were almost completely transparent in the near-ultraviolet and visible regions. The etch pit density was found to be as low as about 6.0 × 10⁴ cm^-2.

• 한국재료학회지
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• 제10권10호
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• pp.691-697
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• 2000

자외선 검출소자로 응용될 수 있는 우수한 특성을 지진 $Al_xGa_{1-x}N$ 박막을 MOCVD 법으로 성장시킨 후 박막의 구조적인 특성을 조사하였다. 사파이어 기판 위에 성장된 $Al_xGa_{1-x}N$의 물리적인 특성을 평가하기 위해 Synchrotron Radiation XRD를 사용하였다. $Al_xGa_{1-x}N$의 두께가 커질수록 박막의 결정성은 증가하였으며 아래층은 Undoped GaN의 결정성과 성장된 $Al_xGa_{1-x}N$의 결정성이 서로 비례적인 상관관계를 가지고 있음을 알아내었다. Al 조성비는 막질에 크게 영향을 주었으며 조성비가 높아질수록 표면 형상은 매우 나빠졌다.

• Bulletin of the Korean Chemical Society
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• 제34권7호
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• pp.2105-2110
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• 2013

Carbon-fiber-supported NiO catalytic filters for oxidation of volatile organic compounds were prepared by electroless Ni-P plating and subsequent annealing processes. Surface structure and crystallinity of NiO film on carbon fiber could be modified by post-annealing at different temperatures (500 and $650^{\circ}C$). Catalytic thermal decompositions of toluene over these catalytic filters were investigated. $500^{\circ}C$-annealed sample showed a higher catalytic reactivity toward toluene decomposition than $650^{\circ}C$-annealed one under same conditions, despite of its lower surface area and toluene adsorption capacity. X-ray diffraction and X-ray photoelectron spectroscopy studies suggest that amorphous structures of NiO on $500^{\circ}C$-annealed catalyst caused the higher reactivity for oxidation of toluene than that of $650^{\circ}C$-annealed sample with a higher crystallinity.

• Advances in materials Research
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• 제6권1호
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• pp.1-12
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• 2017

The aim of the work was to evaluate the effect of ultraviolet-ozone ($UV-O_3$) irradiation with different times on the structure and thermal properties of hydroxypropyl methylcellulose (HPMC) in the form of a thin film to be used as bioequivalent materials according to their important broad practical and medical applications. HPMC thin films were exposed to $UV-O_3$ radiation in air at a wavelength of 184.9 nm.The beneficial effects of this treatment on the crystallinity and amorphousity regions were followed by X-ray diffraction technique and FTIR spectroscopy. Differential scanning calorimetry, thermogravimetric and differntial thermal analyses were used in order to study the thermal properties of HPMC samples following the process of photodegradation. The obtained results indicated that the rate of degradation process was increased with increasing the exposure time. Variations in shape and area of the thermal peaks were observed which may be attributed to the different degrees of crystallinity after exposing the treated HPMC samples. This meant a change in the amorphousity of the treated samples, the oxidation of its chemical linkages on its surface and its bulk, and the formation of free radical species as well as bond formation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.148-151
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• 2000

$Mg_{2-2x}Ti_xO_2$ films were prepared by e-beam evaporation method to be used as possible substitutes for the conventional MgO protective layer. The oxygen content in the films and in turn, the ratio of metal to oxygen gradually increased with increasing the $TiO_2$ content in the starting materials. The pure MgO films exhibited the crystallinity with strong (111) orientation. The $Mg_{2-2x}Ti_xO_2$ films, however, had the crystallinity with (311) preferred orientation. When the $[TiO_2/(MgO+TiO_2)]$ ratios of 0.1 and 0.15 were used, the deposited films exhibited the secondary electron emission yields improved by 50% compared to that of the conventional MgO protective layer, which resulted in reduction in discharge voltage by 12%.

• Journal of Korean Vacuum Science & Technology
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• 제4권1호
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• pp.6-10
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• 2000

Ferroelectric YMnO$_3$ thin films were deposited on $Y_2$O$_3$/si(100) substrates by metalorganic chemical vapor deposition. The YMnO$_3$ thin films annealed in vacuum ambient (100 mTorr) above 75$0^{\circ}C$ show hexagonal structured YMnO$_3$. However, the film annealed in oxygen ambient shows poor crystallinity, and the second phase as $Y_2$O$_3$ and orthorhombic-YMnO$_3$ were shown. The annealing ambient and pressure on the crystallinity of YMnO$_3$ thin films is very important. The C-V characteristics have a hysteresis curve with a clockwise rotation, which indicates ferroelectric polarization switching behavior. When the gate voltage sweeps from +5 to 5 V, the memory window of the Pt/YMnO$_3$/Y$_2$O$_3$/Si gate capacitor annealed at 85$0^{\circ}C$ is 1.8 V. The typical leakage current densities of the films annealed in oxygen and vacuum ambient are about 10$^{-3}$ and 10$^{-7}$ A/cm$^2$ at applied voltage of 5 V.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.217-217
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• 2013

Carbon-fiber-supported NiO catalytic filters for oxidation of volatile organic compounds were prepared by electroless Ni-P plating and subsequent annealing processes. Surface structure and crystallinity of NiO film on carbon fiber could be modified by post-annealing at different temperatures (500 and $650^{\circ}C$. Catalytic thermal decompositions of toluene over these catalytic filters were investigated. $500^{\circ}C$ annealed sample showed a higher catalytic reactivity toward toluene decomposition than $650^{\circ}C$ annealed one under same conditions, despite of its lower surface area and toluene adsorption capacity. X-ray diffraction and X-ray photoelectron spectroscopy studies suggested that amorphous structures of NiO on $500^{\circ}C$ annealed catalyst caused the higher reactivity for oxidation of toluene than that of $650^{\circ}C$ annealed sample with a higher crystallinity.

• 열처리공학회지
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• 제30권2호
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• pp.61-66
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• 2017

$SnO_2$ was electrodeposited on nodule-type Cu foil at varing current density and electrodeposition time. Unlike the previous research results, when the anodic current is applied, the $SnO_2$ layer was not electrodeposited and the substrate is corroded. When the cathodic current was applied, the $SnO_2$ layer could be successfully deposited. At this time, the surface microstructure of the powdery type was observed, which showed similar crystallinity to amorphous and had a very large surface area. Crystallinity increased after low-temperature heat treatment at $250^{\circ}C$ or lower. As a result of evaluating the charge/discharge performances as an anode material for lithium ion battery, it was confirmed that the capacity of the heat treated $SnO_2$ was increased more than 2 times, but it still showed a limit point showing initial low coulombic efficiency and low cyclability. However, it was confirmed that the battery performances may be enhanced through optimizing the electrodeposition process and introducing post heat treatment.

• 한국재료학회지
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• 제4권3호
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• pp.280-286
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• 1994

As-grown $YBa_2Cu_3O_{7-x}$ films on MgO(100)substrates were prepated by a reactive co-evaporation method, and effects of activated oxygen plasma on the crystallinity and superconductivity at substrate temperature ranging from $450^{\circ}C$ to $590^{\circ}C$ were investigated. The film deposited under the activated oxygen plasma at the substrate temperature of $590^{\circ}C$ had a single crystal phase. Whereas, when films were deposited under only oxygen gas, they were not in perfect single crystal phase but with slight polycrystalline nature. When the substrate temperature was $590^{\circ}C$, $Tc_{zero}$'s were 83K and 80K for films with and without activated oxygen plasma, respectively. The critical temperature, the crystal structure and the surface morphology of as-grown films were found to be insensitive to the activated oxygen plasma which is introduced during deposition instead of oxygen gas, but the crystalline quality was improved somewhat by the introduction by the introduction of actvated oxygen plasma.