• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.3
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• pp.229-233
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• 2011

Diamond thin films were deposited on pretreated Co cemented tungsten carbide (WC-6%Co) inserts as substrate by microwave plasma chemical vapor deposition (MPCVD) system, equipped with a 915MHz, 30kW generator for generating a large-size plasma. The substrates were pretreated with two solutions Murakami solution $[KOH:K_3Fe(CN)_6:H_2O]$ and nitric solution $[HNO_3:H_2O]$ to etch, WC and Co at cemented carbide substrates, respectively. The deposition experiments were performed at an input power of 10 kW and in a total pressure of 100 torr. The influence of various $CH_4$ contents on the crystallinity and morphology of the diamond films deposited in MPCVD was investigated using scanning electron microscopy (SEM) and Raman spectroscopy. The diamond film synthesized by the $CH_4$ plasma shows a triangle-faceted (111) diamond. As $CH_4$ contents was increased, the thickness of diamond films increased and the faceted planes disappeared. Finally, Faceted diamond changed into nano-crystalline diamond with random crystallinity.

• Journal of the Semiconductor & Display Technology
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• v.8 no.2
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• pp.11-14
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• 2009

The $Sr_{0.7}Bi_{2.3}Nb_2O_9$(SBN) thin films are deposited on Pt-coated electrode(Pt/Ti/$SiO_2$/Si) using RF sputtering method at various $Ar/O_2$ ratio. We investigated the effect of deposition condition(specially $Ar/O_2$ ratio) on the structural properties of SBN thin film. As $Ar/O_2$ ratio was increased, the peaks in the XRD pattern became more sharp. Also, the peaks(008)(115)(220) in 80/20 of $Ar/O_2$ ratio were suddenly appeared. The optimum of the rougness showed about 4.33 nm in 70/30 of $Ar/O_2$ ratio. The crystallinity of SBN thin films were increased with the increase of $Ar/O_2$ ratio. Also, Deposition rate of SBN thin films was about 4.17 nm/min in 70/30 of $Ar/O_2$ ratio. The capacitance of SBN thin films were increased with the increase of $Ar/O_2$ ratio.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.1
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• pp.39-43
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• 2021

In the case of ZnO:Al thin films, it is the best material that can replace ITO that is mainly used as a transparent electrode in electronic devices such as solar cells and flat-panel displays. In this study, ZnO:Al films were fabricated by using the RF dual magnetron sputtering method at various substrate temperatures. As the substrate temperature increased, the crystallinity of the ZnO:Al thin films was improved, and the electrical conductivity and electrical properties of the thin film improved owing to the increase in grain size. In addition, the surface roughness of the ZnO:Al thin films increased due to changes in the surface and density of the thin films. Moreover, the substrate temperature increased the density of thin films and improved their transmittance. To be applied to solar cells and other several electronic devices in the future, the hardness and adhesion properties of the thin film improve as the substrate temperature increases.

• Polymer(Korea)
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• v.26 no.3
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• pp.335-343
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• 2002

Blend resin (PET/PETG 70/30 blend) of poly (ethylene terephthalate) (PET) and poly (ethylene terephthalate glycol) (PETG) of weight percent 70/30 was prepared by a twin-screw extruder. Undrawn films of the blend and pure PETG were made by melt-press in hot press. Drawn films were made by capillary rheometer. Crystallinity, shrinkage, thermal, dynamic mechanical, and mechanical properties of these blends and PETG drawn films were investigated by wide angle X-ray diffractometer, dry oven, DSC thermal analyzer, and tensile tester. The crystallinity and density of these films increased with increasing draw ratio and draw rate but decreased with increasing draw temperature. The crystallinity and density of the blend films were higher than those of PETG films. The tensile strength and tensile modulus of these drawn alms increased with increasing draw ratio and draw rate but decreased with increasing draw temperature. The tensile strength and tensile modulus of blend films were higher than those of PETG films. Shrinkage of PETG md blend films decreased with draw ratio and draw rate. Shrinkage of undrawn blend film was 600% higher than that of pure PET film.

• Polymer(Korea)
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• v.35 no.3
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• pp.249-253
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• 2011

The effect of morphological development in PET/PEN blending on the physical properties of PET/PEN blend film as a flexible substrate was investigated. The two phase morphology was obtained in PET/PEN blends and it caused the improvement of dimensional stability of PET/PEN blend as a flexible substrate. The two phase morphology and crystallinity of PET/PEN blends could be controlled by the transesterification between PET and PEN during the film processing and this macroscopic structural development affected the dimensional stability of PET/PEN blend films. Better dimensional stability was obtained with increasing crystallinity and decreasing the level of transesterification.

• Journal of the Korean Vacuum Society
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• v.19 no.2
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• pp.128-133
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• 2010

ZnO:Al films were deposited by DC-pulsed magnetron sputtering using a two-step process involving the control of the oxygen pressure. The seed layers were prepared with various Ar to oxygen flow ratios and the bulk layers were deposited under pure Ar. As the oxygen pressure during the deposition of the seed layer increased, the crystallinity and degree of (002) texturing increased. The resistivity gradually decreased with increasing crystallinity from $4.7\times10^4\Omega{\cdot}cm$ (no seed) to $3.7\times10^4\Omega{\cdot}cm$ (Ar/$O_2$ = 9/1). The etched surface showed a crater-like structure and an abrupt morphology change appeared as the crystallinity was increased. The sample deposited at an Ar/$O_2$ flow ratio of 9/1 showed a very high haze value of 88% at 500 nm, which was explained by the large feature size of the craters, as shown in the AFM image.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.171.1-171.1
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• 2015

Carbon nanotube emitters is very promising electron emitter for electron beam applications. We introduced the carbon nanotube electron beam (C-beam) exposure technic using triode structure. As a source, the electron beam emit from CNT emitters placed at the cathode by high electric field. Through the gate mesh, with high accelerating energy, the electron can be extracted easily and impact at the anode plate. For thin film modification, after the C-beam exposure on the amorphous silicon thin film, we found phase changes and it showed a high crystallinity from the Raman measurement. We expect that this crystallized film will be a good candidate as a new active layer of TFT.

• Korea-Australia Rheology Journal
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• v.21 no.2
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• pp.135-141
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• 2009

Effect of activation energy and crystallization kinetics of polyethylenes (PEs) on the dynamics and stability has been investigated by changing rheological properties and crystallization rate in film casting process. The effect of changes of these properties has been shown using a typical example of short-chain branching (SCB) in linear polyethylenes. SCBs in linear polymers generally lead to the increase of the flow activation energy, and to the decrease of the crystallization rate, making polymer viscosity lower in the case of equivalent molecular weight. In general, the increment of the crystallinity of polymers under partially crystallized state helps to enhance the process stability by increasing tension, and lower fluid viscoelasticity possesses the stabilizing effect for linear polymers. It has been found that the fluid viscoelasticity plays a key role in the control of process stability than crystallization kinetics which critically depends on the cooling to stabilize the film casting process of short-chain branched polymers operated under the low aspect ratio condition.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.40 no.6
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• pp.574-581
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• 1991

Damage in film capacitors has been investigated, using FTIR and ESCA, aiming to elucidate the nature of electrode removal and the possibility of base films to be damaged. Also, tests were conducted to investigate the effect of a long-term thermal aging at elevated temperatures. Unsuccessful clearing or grape-clustering processes can induce a long-term degradation which involves the chemical and morphological changes. Major changes are the oxidation and the decrease in surface crystallinity possibly arising from the corona discharge. An immediate deterioration of BOPP film may occur when the air entrapped between the film layers induces an extensive autocatalytic oxidative degradation. This type of immediate damage may result in a premature failure at an early stage of qualification test. As far as the nature of electrode removal is concerned, a permanent removal of electrode materials was observed in the main erosion area.

• Journal of the Korean Ceramic Society
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• v.29 no.4
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• pp.319-327
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• 1992

Sb-doped SnO2 films were formed on Corning glass 7059 substrate by chemical vapor deposition using simulataneous hydrolysis of SnCl4 and SbCl5. Fairly good transparent conducting film with a low resistivity of ~6$\times$10-4{{{{ OMEGA }}cm and high average optical transparency above ~85% in the range of visible light was obtained at the deposition condition of 50$0^{\circ}C$ and input-gas ratio, [Psbcl5/Psncl4] of 0.05. Film conductivity was improved without loosing optical transparency at light doping of Sb and found to be due to the increase of electron concentration. However, high doping of Sb into SnO2 film largely deteriorated conductivity, optical transparency and crystallinity of the film.