• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.99.2-99.2
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• 2010

This paper investigates the dependence of a-Si:H/c-Si passivation and heterojunction solar cell performances on various cleaning processes of silicon wafer and surface morphology. It is observed that passivation quality of a-Si:H thin-films on c-Si wafer highly depends on wafer surface conditions. The MCLT(Minority carrier life time) of wafer incorporating intrinsic (i) a-Si:H as a passivation layer shows sensitive variation with cleaning process and surface morpholgy. By applying improved cleaning processes and surface morphology we can obtain the MCLT of $200{\mu}sec$ after H-termination and above 1.5msec after i a-Si:H thin film deposition, which has implied open circuit voltage of 0.720V.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1995년도 제8회 학술발표회 논문개요집
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• pp.23-23
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• 1995

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 2002년도 춘계공동학술발표회요약집
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• pp.321.2-321
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• 2002

• 한국재료학회지
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• 제25권9호
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• pp.462-467
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• 2015

Pellicle is defined as a thin transparent film stretched over an aluminum (Al) frame that is glued on one side of a photomask. As semiconductor devices are pursuing higher levels of integration and higher resolution patterns, the cleaning of the Al flame surface is becoming a critical step because the contaminants on the Al flame can cause lithography exposure defects on the wafers. In order to remove these contaminants from the Al frame, a highly concentrated nitric acid ($HNO_3$) solution is used. However, it is difficult to fully remove them, which results in an increase in the Al surface roughness. In this paper, the pellicle frame cleaning is investigated using various cleaning solutions. When the mixture of sulfuric acid ($H_2SO_4$), hydrofluoric acid (HF), hydrogen peroxide ($H_2O_2$), and deionized water with ultrasonic is used, a high cleaning efficiency is achieved without $HNO_3$. Thus, this cleaning process is suitable for Al frame cleaning and it can also reduce the use of chemicals.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.34.2-34.2
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• 2011

The demand for Ru has been increasing in the electronic, chemical and semiconductor industry. Chemical mechanical planarization (CMP) is one of the fabrication processes for electrode formation and barrier layer removal. The abrasive particles can be easily contaminated on the top surface during the CMP process. This can induce adverse effects on subsequent patterning and film deposition processes. In this study, a post Ru CMP cleaning solution was formulated by using sodium periodate as an etchant and citric acid to modify the zeta potential of alumina particles and Ru surfaces. Ru film (150 nm thickness) was deposited on tetraethylorthosilicate (TEOS) films by the atomic layer deposition method. Ru wafers were cut into $2.0{\times}2.0$ cm pieces for the surface analysis and used for estimating PRE. A laser zeta potential analyzer (LEZA-600, Otsuka Electronics Co., Japan) was used to obtain the zeta potentials of alumina particles and the Ru surface. A contact angle analyzer (Phoenix 300, SEO, Korea) was used to measure the contact angle of the Ru surface. The adhesion force between an alumina particle and Ru wafer surface was measured by an atomic force microscope (AFM, XE-100, Park Systems, Korea). In a solution with citric acid, the zeta potential of the alumina surface was changed to a negative value due to the adsorption of negative citrate ions. However, the hydrous Ru oxide, which has positive surface charge, could be formed on Ru surface in citric acid solution at pH 6 and 8. At pH 6 and 8, relatively low particle removal efficiency was observed in citric acid solution due to the attractive force between the Ru surface and particles. At pH 10, the lowest adhesion force and highest cleaning efficiency were measured due to the repulsive force between the contaminated alumina particle and the Ru surface. The highest PRE was achieved in citric acid solution with NaIO4 below 0.01 M at pH 10.

• 청정기술
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• 제15권2호
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• pp.81-90
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• 2009

본 연구에서는 산업체에서 대체 세정제를 객관적이고 체계적으로 선정하는데 도움을 주고자 여러 가지 세정성 평가방법을 실험을 통하여 비교 평가하였다. 세정성 평가방법으로는 중량법, OSEE (optically simulated electron emission)법, 접촉각법과 FTIR, UV-VIS, HPLC와 같은 정밀분석기기를 이용한 분석법을 사용하여 flux, solder, grease 등의 오염물질에 대한 세정성 평가를 수행하였다. 그 결과 중량법은 쉽고 간단하게 세정제의 세정효율을 측정할 수 있었지만 중량측정의 한계로 정밀측정이 어려웠다. 반면에 OSEE법은 세정제의 세정성 평가를 빠르고 정밀하게 수행할 수 있었다. 접촉각 측정법은 피세정물 표면에 오염물질과 세정제에 의한 얇은 친유성 막의 형성으로 인하여 접촉각 변화에 영향을 주기 때문에 세정성 평가에 특별한 주의가 요구되었다. 중량법으로 수행하기 어려운 정밀세정성 평가의 경우 UV-VIS, FTIR, HPLC와 같은 정밀분석기기를 이용하여 피세정물에 잔류한 flux, solder, grease 등의 극미량의 오염물을 특수 용제로 추출하여 아주 작은 농도의 오염물을 정량분석할 수 있었다.

• 한국전기전자재료학회논문지
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• 제16권7호
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• pp.569-572
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• 2003

In this study, we evaluated the dilute HF cleaning to reduce residual defects made by metal CMP process. The purpose of this test is to observe the existence of barrier metal damage during DHF cleaning on condition that it should not affect metal thin film reliability, so we will get rid of slurry residual particles as a main defect of the metal CMP process for the better yield. In-line defect data showed us that slurry residual particles were removed by DHF application. The HF rinse significantly reduced metal contamination levels and surface roughness. The best effect by additional oxide loss was discovered when Dilute HF condition is 10".

• 한국응용과학기술학회지
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• 제31권4호
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• pp.584-594
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• 2014

고분자 필름의 표면에 친수성의 증가시키는 것은 그 자기 세정 및/또는 방담 특성을 가지게 하는데 중요한 접근 방법이다. 일반적으로 친수성 표면은 비이온 계면활성제를 코팅하거나 표면에너지를 증가시킴으로써 제조할 수 있다. 본 연구에서는 가격이 저렴하고 톨루엔 용제에 잘 용해될 뿐 만아니라 커플링제와 반응할 수 잇는 하이드록시기를 가지고 있는 Tween, Span 및 PEG-PPG 블록공중합체를 선택하여 실험을 수행하였다. 배합 조건에 따라 PET 필름 표면의 친수도에 큰 영향을 미침을 확인하였다. 그러나, PET 필름의 표면상에 단순히 이들 계면활성제의 도입은 수세 후에는 높은 내구성을 보여주지 않았다. 내구성을 높이기 위해 에폭시 및 이소시아네이트와 같은 두 종류의 커플링제를 사용하였다. 코팅액에 6 중량 %isophrone 디이소시아네이트 (IPDI)를 함유한 코팅액으로 코팅된 PET 필름 표면의 물에 대한 접촉각은 $8.7^{\circ}$까지 낮아졌으며, 이는 매우 높은 친수성에 대한 간접적인 증거이다. 또한, 코팅된 PET 필름의 광 (파장 500 nm) 투과율 값은 높은 투명 특성을 유지하면서 87%에서 85%로 약간 감소하였다. 이 PET 필름은 자기 세정 특성이 필요한 필름산업에 적합한 소제로 사용될 수 있다.

• Transactions on Electrical and Electronic Materials
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• 제10권3호
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• pp.71-74
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• 2009

Electroplated Cu is a cost efficient metallization method in microelectronic packaging applications. Typically in 3-D chip staking technology, utilizing through silicon via (TSV), electroplated Cu metallization is inevitable for the throughput as well as reducing the cost of ownership (COO).To achieve a comparable film quality to sputtering or CVD, a pre-cleaning process as well as plating process is crucial. In this research, atmospheric plasma is employed to reduce the usage of chemicals, such as trichloroethylene (TCE) and sodium hydroxide (NaHO), by substituting the chemical assisted organic cleaning process with plasma surface treatment for Cu electroplating. By employing atmospheric plasma treatment, marginally acceptable electroplating and cleaning results are achieved without the use of hazardous chemicals. The experimental results show that the substitution of the chemical process with plasma treatment is plausible from an environmentally friendly aspect. In addition, plasma treatment on immersion Sn/Cu was also performed to find out the solderability of plasma treated Sn/Cu for practical industrial applications.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.183-183
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• 2012

In the era of 45 nm or beyond technology, conventional etch mask using photoresist showed its limitation of etch mask pattern collapse as well as pattern erosion, thus hard mask in etching became necessary for precise control of etch pattern geometry. Currently available hard mask materials are amorphous carbon and polymetric materials spin-on containing carbon or silicon. Amorphous carbon layer (ACL) deposited by PECVD for etch hard mask has appeared in manufacturing, but spin-on carbon (SOC) was also suggested to alleviate concerns of particle, throughput, and cost of ownership (COO) [1]. SOC provides some benefits of reduced process steps, but it also faced with wiggling on a sidewall profile. Diamond like carbon (DLC) was also evaluated for substituting ACL, but etching selectivity of ACL was better than DLC although DLC has superior optical property [2]. Developing a novel material for pattern hard mask is very important in material research, but it is also worthwhile eliminating a potential issue to continuously develop currently existing technology. In this paper, we investigated in-situ dry-cleaning (ISD) monitoring of ACL coated process chamber. End time detection of chamber cleaning not only provides a confidence that the process chamber is being cleaned, but also contributes to minimize wait time waste (WOW). Employing Challenger 300ST, a 300mm ACL PECVD manufactured by TES, a series of experimental chamber cleaning runs was performed after several deposition processes in the deposited film thickness of $2000{\AA}$ and $5000{\AA}$. Ar Actinometry and principle component analysis (PCA) were applied to derive integrated and intuitive trace signal, and the result showed that previously operated cleaning run time can be reduced by more than 20% by employing real-time monitoring in ISD process.