• Journal of Adhesion and Interface
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• v.21 no.3
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• pp.93-100
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• 2020

3D printing technology enables proper objects to be made through an additive manufacturing method, but resulting in dimension deviation of the product due to contraction phenomenon as cooling melted filament resin injected from high-temperature use environment. In this research, we studied on acrylic adhesives for 3D printer build sheet in order to fabricate high-quality products with a precise shape and to well-mount without distortion. The solvent-free UV-curable acrylic adhesive formulation was designed by adding 4-acryloylmorpholine (ACMO) with high adhesion, toughness, glass transition temperature so that adhesion properties are stable at high temperature and products are easily mounted/detached from the adhesives. The designed formulation was polymerized through two-steps using post-addition of monomers. Using this, the acrylic adhesive was coated to make a film and then analyzed using various experimental techniques. As a result, the fabricated adhesive exhibited high glass transition temperature and there was little gap in peel strength before and after thermal treatment. Moreover, it was confirmed by rheological analysis that this adhesive can provide great bonding/debonding ability without distortion. We demonstrated the fabrication of a rectangular product using a 3D printing method using our acrylic adhesive as a build sheet. Mounting ability and workability were satisfactory and dimension deviation of the product was tiny. Because the product is easily detachable from the acrylic adhesive developed here than conventional build sheets, it is expected that this will provide work convenience to users who use the 3D printer.

• International Journal of Highway Engineering
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• v.3 no.4 s.10
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• pp.117-126
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• 2001

In this research, evaluation of adhesion in tension property of SBR-modified concrete to ordinary portland cement concrete was conducted with uniaxial direct tensile bond test which was proposed by Kuhlmann. A test set-up was fabricated in order to minimize the eccentric force by introducing a joint which might fully rotate. The main experimental variables were cement-latex ratios, surface preparations and moisture levels. The results obtained were as follows: The LMC specimen at 15% latex-cement ratio increased the adhesion in tension by range of 37% compared to that of conventional cement concrete. This might be due to latex film formed between cement paste and aggregate. The effects of surface preparation on bond of latex modified concrete to conventional concrete were significant at the conditions by sand paper and wire brush. A better bond could be achieved by rough surface rather than smooth. The saturated and surface dry (SSD) condition were considered to be the most appropriate moisture level followed by wet, finally by dry. Thus, a proper surface preparation and moisture level are quite necessity in order to obtain better bonding at LMC overlay.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.368-373
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• 1998

As device dimensions approach submicrometer size in ULSI, the demand for interlayer dielectric materials with very low dielectric constant is increased to solve problems of RC delay caused by increase in parasitic resistance and capacitance in multilevel interconnectins. Fluorinated amorphous carbon in one of the promising materials in ULSI for the interlayer dielectric films with low dielectric constant. However, poor thermal stability and adhesion with Si substrates have inhibited its use. Recently, amorphous hydrogenated carbon (a-C:H) film as a buffer layer between the Si substrate and a-C:F has been introduced because it improves the adhesion with Si substrate. In this study, therfore, a-C:F/a-C:H films were deposited on p-type Si(100) by ECRCVD from $C_2F_6, CH_4$and $H_2$gas source and investigated the effect of forward power and composition on the thickness, chemical bonding state, dielectric constant, surface morphology and roughness of a-C:F films as an interlayer dielectric for ULSI. SEM, FT-IR, XPS, C-V meter and AFM were used for determination of each properties. The dielectric constant in the a-C:F/a-C:H films were found to decrease with increasing fluorine content. However, the dielectric constant increased after furnace annealing in $N_2$atomosphere at $400^{\circ}C$ for 1hour due to decreasing of flurorine content. However, the dielectric constant increased after furnace annealing in $N_2$atmosphere at $400^{\circ}C$ for 1hour due to decreasing of fluorine concentration.

• Journal of the Korean Ceramic Society
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• v.34 no.1
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• pp.56-62
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• 1997

The PAN (Polyacrylonitrile) based carbon fiber-ceramic composites (CFCC) were prepared from mixtures of short carbon fibers, phenolic resin and ceramic binder. The effects of carbonization temperature of a pre-cursor fiber, the stabilized PAN fiber, on the specific surface area and the bending strength of the activated CFCC were studied in this work. The precursor fiber was carbonized at 80$0^{\circ}C$ and 100$0^{\circ}C$, respectively. The CFCC were activated at 85$0^{\circ}C$ in carbon dioxide for 10~90 minutes. As the burn-off of the activated CFCC made of the precursor fiber carbonized at 80$0^{\circ}C$ was increased from 37% to 76%, the specific surface area in-creased from 493m2/g to 1090m2/g, and the bending strength decreased from 4.5MPa to 1.4MPa. These values were about two times larger than those of the activated CFCC of which precursor fiber was car-bonized at 100$0^{\circ}C$. The effects of carbonization temperature of a precursor fiber on the specific surface area and bending strength of the activated CCFC were explained by bonding force between carbon fiber and car-bonized phenolic resin as well as by relative shirnkage between carbon fiber and ceramic film.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.27-27
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• 2011

For the design of real applicable molecular devices, current-voltage properties through molecular nanostructures such as metal-molecule-metal junctions (molecular junctions) have been studied extensively. In thiolate monolayers on the gold electrode, the chemical bonding of sulfur to gold and the van der Waals interactions between the alkyl chains of neighboring molecules are important factors in the formation of well-defined monolayers and in the control of the electron transport rate. Charge transport through the molecular junctions depends significantly on the energy levels of molecules relative to the Fermi levels of the contacts and the electronic structure of the molecule. It is important to understand the interfacial electron transport in accordance with the increased film thickness of alkyl chains that are known as an insulating layer, but are required for molecular device fabrication. Thiol-tethered RuII terpyridine complexes were synthesized for a voltage-driven molecular switch and used to understand the switch-on mechanism of the molecular switches of single metal complexes in the solid-state molecular junction in a vacuum. Electrochemical voltammetry and current-voltage (I-V) characteristics are measured to elucidate electron transport processes in the bistable conducting states of single molecular junctions of a molecular switch, Ru(II) terpyridine complexes. (1) On the basis of the Ru-centered electrochemical reaction data, the electron transport rate increases in the mixed self-assembled monolayer (SAM) of Ru(II) terpyridine complexes, indicating strong electronic coupling between the redox center and the substrate, along the molecules. (2) In a low-conducting state before switch-on, I-V characteristics are fitted to a direct tunneling model, and the estimated tunneling decay constant across the Ru(II) terpyridine complex is found to be smaller than that of alkanethiol. (3) The threshold voltages for the switch-on from low- to high-conducting states are identical, corresponding to the electron affinity of the molecules. (4) A high-conducting state after switch-on remains in the reverse voltage sweep, and a linear relationship of the current to the voltage is obtained. These results reveal electron transport paths via the redox centers of the Ru(II) terpyridine complexes, a molecular switch.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.431-432
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• 2012

In the era of 20 nm scaled semiconductor volume manufacturing, Microelectronics Manufacturing Engineering Education is presented in this paper. The purpose of microelectronic engineering education is to educate engineers to work in the semiconductor industry; it is therefore should be considered even before than technology development. Three Microelectronics Manufacturing Engineering related courses are introduced, and how undergraduate students acquired hands-on experience on Microelectronics fabrication and manufacturing. Conventionally employed wire bonding was recognized as not only an additional parasitic source in high-frequency mobile applications due to the increased inductance caused from the wiring loop, but also a huddle for minimizing IC packaging footprint. To alleviate the concerns, chip bumping technologies such as flip chip bumping and pillar bumping have been suggested as promising chip assembly methods to provide high-density interconnects and lower signal propagation delay [1,2]. Aluminum as metal interconnecting material over the decades in integrated circuits (ICs) manufacturing has been rapidly replaced with copper in majority IC products. A single copper metal layer with various test patterns of lines and vias and $400{\mu}m$ by $400{\mu}m$ interconnected pads are formed. Mask M1 allows metal interconnection patterns on 4" wafers with AZ1512 positive tone photoresist, and Cu/TiN/Ti layers are wet etched in two steps. We employed WPR, a thick patternable negative photoresist, manufactured by JSR Corp., which is specifically developed as dielectric material for multi- chip packaging (MCP) and package-on-package (PoP). Spin-coating at 1,000 rpm, i-line UV exposure, and 1 hour curing at $110^{\circ}C$ allows about $25{\mu}m$ thick passivation layer before performing wafer level soldering. Conventional Si3N4 passivation between Cu and WPR layer using plasma CVD can be an optional. To practice the board level flip chip assembly, individual students draw their own fan-outs of 40 rectangle pads using Eagle CAD, a free PCB artwork EDA. Individuals then transfer the test circuitry on a blank CCFL board followed by Cu etching and solder mask processes. Negative dry film resist (DFR), Accimage$^{(R)}$, manufactured by Kolon Industries, Inc., was used for solder resist for ball grid array (BGA). We demonstrated how Microelectronics Manufacturing Engineering education has been performed by presenting brief intermediate by-product from undergraduate and graduate students. Microelectronics Manufacturing Engineering, once again, is to educating engineers to actively work in the area of semiconductor manufacturing. Through one semester senior level hands-on laboratory course, participating students will have clearer understanding on microelectronics manufacturing and realized the importance of manufacturing yield in practice.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.2 s.35
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• pp.111-119
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• 2005

Stack specimen with three dimensional interconnection structure through Cu via of $75{\mu}m$ diameter, $90{\mu}m$ height and $150{\mu}m$ pitch was successfully fabricated using subsequent processes of via hole formation with Deep RIE (reactive ion etching), Cu via filling with pulse-reverse electroplating, Si thinning with CMP, photolithography, metal film sputtering, Cu/Sn bump formation, and flip chip bonding. Contact resistance of Cu/Sn bump and Cu via resistance could be determined ken the slope of the daisy chain resistance vs the number of bump joints of the flip chip specimen containing Cu via. When flip- chip bonded at $270^{\circ}C$ for 2 minutes, the contact resistance of the Cu/Sn bump joints of $100{\times}100{\mu}m$ size was 6.7m$\Omega$ and the Cu via resistance of $75{\mu}m$ diameter, $90{\mu}m$ height was 2.3m$\Omega$.

• Journal of the Korean Chemical Society
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• v.37 no.3
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• pp.302-308
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• 1993

Monolayers of calcium palmitate were deposited on a piezoelectric quartz crystal plate by the Langmuir-Blodgett(LB) technique, and it was found from frequency changes of the quartz crystal deposited LB films. The usual carbonyl absorbance at 1704 cm$^{-1}C$ was replaced by the split band in the 1540~1590 cm$^{-1}C$. The two absorptions at 1580 cm$^{-1}C$ and 1540 cm$^{-1}C$ were assigned to the antisymmetric stretching vibration of the calcium carboxylate group and the hydrated species due to the lowering carbonyl stretching frequency by hydrogen bonding$^1$ respectively. Besides, it was demonstrated by X-ray diffraction analysis. The swelling behaviour of LB films in water phase at 23$^{\circ}C$ was observed from the frequency change of the LB films deposited quartz crystal with time. Calcium palmitate LB films has been found to swell substantially in water without flaking, whereas hexadecanol LB films hardly swelled in water. Amount of swelling of calcium palmitate LB films was equivalent to 47 wt.${\%}$ of the dry LB films, which means that ca. 7 water molecules were incorporated per calcium palmitate amphiphile. Chemical structure of calcium palmitate LB film was estimated as [CH$_3$(CH$_2$)$_{14}$COO]$_2$Ca${\cdot}$XH$_2$O, and the hydration number was 1.

• Polymer(Korea)
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• v.33 no.1
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• pp.79-83
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• 2009

Thin electric insulation layers were coated on aluminum plates and aluminum condenser cases by plasma polymerization of HMDSO+$O_2$. Electric resistances of the films were higher than 1.0 M$\Omega$ if they are thicker than 0.5 ${\mu}m$ independently of the type of films but their surface morphologies and adhesion strengths were dependent on the process conditions. Deposition rate and adhesion strength of the films were dependent on $O_2$/HMDSO flow ratio and discharge power. The best result was obtained at $O_2$/HMDSO flow ratio of 4 and discharge power of 60 W. Adhesion strength could also be highly improved if aluminum was pre-treated in boiling water for 30 min through the formation of Al-O-Si bonding between the film and the aluminum surface. The coated films showed excellent chemical and thermal resistances.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.4
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• pp.251-255
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• 2021

a-Si is commonly considered as a primary candidate for the formation of passivation layer in heterojunction (HIT) solar cells. However, there are some problems when using this material such as significant losses due to recombination and parasitic absorption. To reduce these problems, a wide bandgap material is needed. A wide bandgap has a positive influence on effective transmittance, reduction of the parasitic absorption, and prevention of unnecessary epitaxial growth. In this paper, the adoption of a-SiO_x:H as the intrinsic layer was discussed. To increase lifetime and conductivity, oxygen concentration control is crucial because it is correlated with the thickness, bonding defect, interface density (D_it), and band offset. A thick oxygen-rich layer causes the lifetime and the implied open-circuit voltage to drop. Furthermore the thicker the layer gets, the more free hydrogen atoms are etched in thin films, which worsens the passivation quality and the efficiency of solar cells. Previous studies revealed that the lifetime and the implied voltage decreased when the a-SiOx thickness went beyond around 9 nm. In addition to this, oxygen acted as a defect in the intrinsic layer. The D_it increased up to an oxygen rate on the order of 8%. Beyond 8%, the D_it was constant. By controlling the oxygen concentration properly and achieving a thin layer, high-efficiency HIT solar cells can be fabricated.