• Journal of the Korean Geotechnical Society
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• v.24 no.11
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• pp.143-155
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• 2008

Ground anchors are classified depending on the kind of stress the grout is subjected to. If the grout material is subjected to tension then it is classified as tension anchor while when the grout material is subjected to compression it is classified as compression anchor. In this study a composite type anchor that possesses both the tension and compression mechanism was developed. For field tests, strain gauges were installed inside the anchor body in soft: soil. From the strain monitoring results, pull-out resistance mechanism that possesses both tension and compression strain was seen.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.3
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• pp.21-30
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• 2012

Technology trend and application of laser fuse, anti-fuse, and eFUSE as well as the structure, programming mechanism, and reliability of eFUSE have been reviewed. In order to ensure eFUSE reliability in the field, a sensing circuit trip point consistent with the fuse resistance distribution, process variation, and device degradation in the circuit such as hot carrier or NBTI, as well as fuse resistance reliability must be considered to optimize and define a reliable fuse programming window.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.13
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• pp.41-67
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• 1973

• Proceedings of the Korean Society of Plant Pathology Conference
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• 1999.04a
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• pp.33.3-34
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• 1999

• Proceedings of the Korean Magnestics Society Conference
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• 2014.11a
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• pp.149-150
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• 2014

• Proceedings of the KSR Conference
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• 2011.10a
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• pp.821-828
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• 2011

A significantly larger lateral load and moment are applied on a high speed railway bridge foundation than other bridge foundations. Therefore most of bridge foundations on Honam high speed railway project were designed by high strength steel pipe piles to resist lateral load and moment, which caused the increase of construction costs. In order to perform optimum design, it is important to estimate accurate lateral resistance when designing this type of structure. Lateral load tests were carried out based on the field design data with the purpose of examining the lateral behavioral characteristics of a railway bridge foundation. The standard load test method(ASTM D 3966) was used for field tests by applying twice of design load. Total four load tests were performed on high speed railway bridge foundations with strain gages installed by every 1m along piles to measure load-resistance characteristics under applied lateral loads. The back-calculated P-y curves from strain gages were compared with estimated P-y curves using theoretical methods based on geotechnical investment data. Back-calculated P-y curves from field tests for sand and clay ground conditions were presented in this paper, which are different from theoretical P-y curves. By using the research results of this study, more accurate estimations of pile design under lateral loads can be available for similar geotechnical conditions.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.2
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• pp.111-114
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• 2008

We studied the influence of nanocrystalline silicon (nc-Si) thin film thickness on top gate nc-Si thin film transistor (TFT) fabricated at $180^{\circ}C$. The nc-Si thickness affects the characteristics of nc-Si TFT due to the nc-Si growth similar to a columnar. As the thickness of nc-Si increases from 40 nm to 200 nm, the grain size was increased from 20 nm to 40 nm. Having a large grain size, the thick nc-Si TFT surpasses the thin nc-Si TFT in terms of electrical characteristics such as field effect mobility. The channel resistance was decreased due to growth of the grain. We obtained the experimental results that the field effect mobility of the fabricated devices of which nc-Si thickness is 60, 90 and 130 nm are 26, 77 and $119\;cm^2/Vsec$, respectively. The leakage current, however, is increased from $7.2{\times}10^{-10}$ to $1.9{\times}10^{-8}\;A$ at $V_{GS}=-4.4\;V$ when the nc-Si thickness increases. It is originated from the decrease of the channel resistance.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.28 no.5
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• pp.607-623
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• 1995

A numerical model of hydraulic resistance by hanging aquaculture facilities is developed and applied to a model basin and a field. A drag stress term formulated by the quadratic law of drag force is introduced Tn the equations of motion for a two-dimensional depth-averaged flow. In the model basin, numerical experiments ave tarried out for the various shape of obstructions, string density and layout of facilities etc.. The flow pattern around the facilities is affected sensitively by the density of string and the layout of facilities. On the other hand, the velocity decay due to the hanging oyster aquaculture facilities is observed in Kamak bay, where the maximum velcocity decay rate is $25\%$ in spring tide. The model is also applied to the field, Kamak bay. The velocity decay rate in the model is comparable with the field measurement data. The velocity decreases around the down-stream area of the facilities, .hut it increases in the other region. The water elevation decreases during the flood and it increases during the ebb.

• Journal of Ocean Engineering and Technology
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• v.26 no.1
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• pp.1-8
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• 2012

To correctly estimate ice load and ice resistance for a ship's hull, it is essential to understand the material properties of sea ice during ice field trials and to use the proper experimental procedure for gathering ice strength data. The first Korean-made icebreaking research vessel (IBRV), ARAON, had her second sea ice trial in the Arctic Ocean during July and August of 2010. This paper describes the test procedures used to properly obtain sea ice strength data, which provides the basic information on the ship's performance in an ice-covered sea and can be used to estimate the correct ice load and ice resistance on the IBRV ARAON. The data gathered from three sea ice field trials during the Arctic voyage of the ARAON includes the ice compressive strength, flexural strength, and failure strain of sea ice. This paper analyzes the gathered sea ice data in comparison with data from the first voyage of the ARAON during her Antarctic Sea ice trial in January 2010.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.10
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• pp.665-671
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• 2017

Herein, we report the fabrication of low-voltage N-type organic field-effect transistors by using high capacitance fluorinated polymer gate dielectrics such as P(VDF-TrFE), P(VDF-TrFE-CTFE), and P(VDF-TrFE-CFE). Electron-withdrawing functional groups in PVDF-based polymers typically cause the depletion of negative charge carriers and a high contact resistance in N-channel organic semiconductors. Therefore, we incorporated intermediate layers of a low-k polymerto prevent the formation of a direct interface between PVDF-based gate insulators and the semiconducting active layer. Consequently, electron depletion is inhibited, and the high charge resistance between the semiconductor and source/drain electrodes is remarkably improved by the in corporation of solution-processed charge injection layers.