• Journal of Broadcast Engineering
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• v.26 no.1
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• pp.61-69
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• 2021

Image outpainting is a very interesting problem in that it can continuously fill the outside of a given image by considering the context of the image. There are two main challenges in this work. The first is to maintain the spatial consistency of the content of the generated area and the original input. The second is to generate high quality large image with a small amount of adjacent information. Existing image outpainting methods have difficulties such as generating inconsistent, blurry, and repetitive pixels. However, thanks to the recent development of deep learning technology, deep learning-based algorithms that show high performance compared to existing traditional techniques have been introduced. Deep learning-based image outpainting has been actively researched with various networks proposed until now. In this paper, we would like to introduce the latest technology and trends in the field of outpainting. This study compared recent techniques by analyzing representative networks among deep learning-based outpainting algorithms and showed experimental results through various data sets and comparison methods.

• International Journal of Computer Science & Network Security
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• v.22 no.1
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• pp.300-304
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• 2022

The central feature of a digital society is the presence of a significant volume of digital services. The main research-analytical goal of the work is to identify the characteristic features of digital services, to classify and compare various types of digital services, to study the main levers for the development of digital services, the principal determinants of the observance and implementation of digital rights, to identify the dominant threats regarding the violation of digital rights, to analyze the features of legal relations that arise between the supplier and the consumer of digital technologies, consider the available taxation options for the digital economy. The work uses the following methods and research methods: hermeneutic, forecasting, in particular, extrapolation, analysis and synthesis, comparative. Research results: the definition of the concept of "digital service" is given, its main characteristics and types, according to the level of digitalization, the states-leaders are identified, slowing down, promising and problematic, the main triggers of slowing digitalization in some EU countries are investigated, by analyzing the regulatory legal acts of the European Commission on digitalization the strategy of the EU's actions to increase the degree of digitalization was determined, the positive and negative effects of digital services concerning the observance of human rights and freedoms were highlighted, the issue of levying taxes from digital companies was investigated.

• Journal of Korean Society of Disaster and Security
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• v.16 no.2
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• pp.15-32
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• 2023

There are some difficulties such as safety problem and need of manpower in measuring discharge by submerging the instruments because of many floating debris and very fast flow in the river during the flood season. As an alternative, microwave water surface current meters have been increasingly used these days, which are easy to measure the discharge in the field without contacting the water surface directly. But it is also hard to apply the method in the sudden and rapidly changing field conditions. Therefore, the estimation of the discharge using the surface velocity in flood conditions requires a theoretical and economical approach. In this study, the measurements from microwave water surface current meter and rating curve were collected and then analyzed by the discharge estimation method using the surface velocity. Generally, the measured and converted discharge are analyzed to be similar in all methods at a hydraulic radius of 3 m or over or a mean velocity of 2 ㎧ or more. Besides, the study computed the discharge by the index velocity method and the velocity profile method with the maximum surface velocity in the section where the maximum velocity occurs at the high water level range of the rating curve among the target locations. As a result, the mean relative error with the converted discharge was within 10%. That is, in flood season, the discharge estimation method using one maximum surface velocity measurement, index velocity method, and velocity profile method can be applied to develop high-level extrapolation, therefore, it is judged that the reliability for the range of extrapolation estimation could be improved. Therefore, the discharge estimation method using the surface velocity is expected to become a fast and efficient discharge measurement method during the flood season.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.28 no.4
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• pp.419-424
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• 1983

Tensile strength and shattering losses of rice grains in a binder harvest and in a free falling test were examined. Indica$\times$Japonica varieties, Milyang 23, Hangangchal, and Taebaek, and a Japonica variety, Jinheung were used for this study. The average tensile strength varied with varieties, showing 0.743N (Newton) in Milyang 23, 1.078N in Hangangchal, 1.573 N in Taebaek, and 1.775 N in Jinheung. Extrapolation of the average tensile strength for the zero field loss of grain indicated about 1.7 N. Moisture content of straw at the cutting position in a binder harvest was 76.0 to 86.7% in culm and 76.7 to 77.8% in leaf sheath. The percent loss of grains occurring in binder barvest in the field was equivalent to the degree of shattering in the panicle-falling test onto the concrete floor at the height of about 40cm. The grain shattering (Y) was closely related to the impulse (X), the change in momentum: Y=-25.73+4958.4X, ($r^2$=0.987) for Milyang 23, Y=-12.97+2258.3X, ($r^2$=0.979) for Hanagangchal, Y=-5.24+840.4X, ($r^2$ =0.976) for Taebaek. The tensile strengths of grains and their variance varied singnificantly yearly even in the same variety. The magnitude of year-variance was somewhat smaller for the easily shattering variety.

• Journal of Korea Water Resources Association
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• v.48 no.7
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• pp.553-566
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• 2015

Acoustic Doppler Current Profilers(ADCPs) have capability to concurrently capitalize three-dimensional velocity vector and bathymetry with highly efficient and rapid manner, and thereby enabling ADCPs to document the hydrodynamic and morphologic data in very high spatial and temporal resolution better than other contemporary instruments. However, ADCPs are also limited in terms of the inevitable unmeasured regions near bottom, surface, and edges of a given cross-section. The velocity in those unmeasured regions are usually extrapolated or assumed for calculating flow discharge, which definitely affects the accuracy in the discharge assessment. This study aimed at scrutinizing a conventional extrapolation method(i.e., the 1/6 power law) for estimating the unmeasured regions to figure out the accuracy in ADCP discharge measurements. For the comparative analysis, we collected spatially dense velocity data using ADV as well as stationary ADCP in a real-scale straight river channel, and applied the 1/6 power law for testing its applicability in conjunction with the logarithmic law which is another representative velocity law. As results, the logarithmic law fitted better with actual velocity measurement than the 1/6 power law. In particular, the 1/6 power law showed a tendency to underestimate the velocity in the near surface region and overestimate in the near bottom region. This finding indicated that the 1/6 power law could be unsatisfactory to follow actual flow regime, thus that resulted discharge estimates in both unmeasured top and bottom region can give rise to discharge bias. Therefore, the logarithmic law should be considered as an alternative especially for the stationary ADCP discharge measurement. In addition, it was found that ADCP should be operated in at least more than 0.6 m of water depth in the left and right edges for better estimate edge discharges. In the future, similar comparative analysis might be required for the moving boat ADCP discharge measurement method, which has been more widely used in the field.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.211-220
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• 1998

The stochiometric composition of $AgGaS_2$polycrystal source materials for the single crystal thin films were prepared from horizontal furnace. From the extrapolation method of X-ray diffraction patterns, it was found that the polycrystal $AgGaS_2$has tetragonal structure of which lattice constant $a_0\;and \;c_0$ were 5.756 $\AA$ and 10.305 $\AA$, respectively. $AgGaS_2$single crystal thin film was deposited on throughly etched GaAs(100) substrate from mixed crystal $AgGaS_2$by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $590^{\circ}C$ and $440^{\circ}C$ respectively, and the growth rate of the single crystal thin films was about 0.5 $mu \textrm{m}$/h. The crystallinity of the grown single crystal thin films was investigated by the DCRC (double crystal X-ray diffraction rocking curve). The optical energy gaps were found to be 2.61 eV for $AgGaS_2$single crystal thin films at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation, then the constants in the Varshni equation are given by${\Alpha};=;8.695{\times}10^{-4};eV/K,and;{\beta};=;332;K$. from the photocurrent spectra by illumination of polarized light of the $AgGaS_2$single crystal thin film, we have found that crystal field splitting $\Delta$Cr was 0.28 eV at 20 K. From the PL spectra at 20 K, the peaks corresponding to free and bound excitons and a broad emission band due to D-A pairs are identified. The binding energy of the free excitons are determined to be 0.2676 eV and 0.2430 eV and the dissociation energy of the bound excitons to be 0.4695 eV.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.22 no.5
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• pp.463-474
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• 2009

Double symmetric patch repair of existing structures always causes membrane action only, however, in many cases this technique is not practical. On the other hand, the bending stiffness of the patch and the skin increases as tensile loading is increased and affects the bending deformation significantly in the case of single-sided patch repair. In this study, the p-convergent full layerwise model has been proposed to determine the stress concentration factor in the vicinity of a circular hole as well as across the thickness of plates with single-sided patch repair. In assumed displacement field, the strain-displacement relations and 3-D constitutive equations of a layer are obtained by the combination of 2-D and 3-D hierarchical shape functions. The transfinite mapping technique has been used to represent a circular boundary and Gauss-Lobatto numerical integration is implemented in order to directly obtain stresses occurred at the nodal points of each layer without other extrapolation techniques. The accuracy and simplicity of the present model are verified with comparison of the previous results in literatures using experiment and conventional 3-D finite element. Also, the bending effect has been investigated with various patch types like square, circular and annular shape.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.84-91
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• 2002

The stochiometric composition of $AgGaS_2$/GaAs polycrystal source materials for the $AgGaS_2$/GaAs epilayer was prepared from horizontal furnace. From the extrapolation method of X-ray diffraction patterns it was found that the polycrystal $AgGaS_2$/GaAs has tetragonal structure of which lattice constant an and Co were 5.756 $\AA$ and 10.305 $\AA$, respectively. $AgGaS_2$/GaAs epilayer was deposited on throughly etched GaAs(100) substrate from mixed crystal $AgGaS_2$/GaAs by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $590^{\circ}C$ and $440^{\circ}C$ respectively. The crystallinity of the grown $AgGaS_2$/GaAs epilayer was investigated by the DCRC (double crystal X-ray diffraction rocking curve). The optical energy gaps were found to be 2.61 eV for $AgGaS_2$/GaAs epilayer at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation, then the constants in the Varshni equation are given by $\alpha=8.695{\times}10^{-4}$ eV/K, and $\beta=332K$. From the photocurrent spectra by illumination of polarized light of the $AgGaS_2$/GaAs epilayer, we have found that crystal field splitting ${\Delta}Cr$ was 0.28 eV at 20 K. From the PL spectra at 20 K, the peaks corresponding to free and bound excitons and a broad emission band due to D-A pairs are identified. The binding energy of the free excitons are determined to be 0.2676 eV and 0.2430 eV and the dissociation energy of the bound excitons to be 0.4695 eV.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.81-81
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• 2003

The stochiometric mixture of evaporating materials for the CuGaSe$_2$ single crystal thin films were prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal CuGaSe$_2$, it was found tetragonal structure whose lattice constant no and co were 5.615$\AA$ and 11.025$\AA$, respectively. To obtains the single crystal thin films, CuGaSe$_2$ mixed crystal was deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were 61$0^{\circ}C$ and 45$0^{\circ}C$ respectively, and the growth rate of the single crystal thin films was about 0.5${\mu}{\textrm}{m}$/h. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by pizoelectric scattering in the temperature range 30K to 150K and by polar optical scattering in the temperature range 150K to 293K. The optical energy gaps were found to be 1.68eV for CuGaSe$_2$ single crystal thin films at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation then the constants in the Varshni equation are given by a=9.615$\times$ 10$^{-4}$ eV/K, and $\beta$=335K. From the photocurrent spectra by illumination of polarized light of the CuGaSe$_2$ single crystal thin films. We have found that values of spin orbit coupling ΔSo and crystal field splitting ΔCr was 0.0900eV and 0.2498eV, respectively. From the PL spectra at 20K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0626eV and the dissipation energy of the acceptor-bound exciton and donor-bound exciton to be 0.0352eV, 0.0932eV, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.197-206
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• 1999

The stochiometric mixture of evaporating materials for the $AgInSe_2$single crystal thin films were prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the $AgInSe_2$polycrystal, it was found tetragonal structure whose lattice constant $a_0$ and $C_0$ were 6.092 $\AA$ and 11.688 $\AA$, respectively. To obtain the single crystal thin films of AgInSe$_2$, the mixed crystal was deposited on thoroughly etched semi-insulator GaAs(100) substrate by HWE system. The source and substrate temperature were fixed to $610^{\circ}C$ and $450^{\circ}C$ respectively, and the thickness of the single thin films was obtained to 3.8 $\mu\textrm{m}$. The crystallization of single crystal thin films was investigated by the photoluminescence (PL) and double crystal X-ray dirrfaction (DCXD). The Hall effect was measured by the method of van der Pauw and carrier density and mobility dependence on temperature were studied. The carrier density and mobility of $AgInSe_2$single crystal thin films deduced from Hall data are $9.58{\times}10^{22} electron/m^3,\; 3.42{\times}10^{-2}m^2/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $AgInSe_2$single crystal thin film, the spin orbit coupling $\Delta$So and the crystal field splitting $\Delta$Cr were obtained to 0.29 eV and 0.12 eV at 20 K respectively. From PL peaks measured at 20 K, 881.1 nm (1.4071 eV) and 882.4 nm (1.4051 eV) mean $E_x^U$ the upper polariton and $E_x^L$ the lower polariton of the free exciton $(E_x)$, also 884.1 nm (1.402 eV) express $I_2 peak of donor-bound exciton emission and 885.9 nm (1.3995 Ev) emerges $I_1$ peak of acceptor-bound exciton emission. In addition, the peak observed at 887.5 nm (1.3970 eV) was analyzed to be PL peak due to DAP.