• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 추계학술발표대회 및
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• pp.99.1-99.1
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• 2007

• 한국재료학회지
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• 제28권2호
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• pp.101-107
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• 2018

Li-incorporated ZnO thin films were deposited by using ultrasonic-assisted spray pyrolysis deposition (SPD) system. To investigate the effect of Li-incorporation on the performance of ZnO thin films, the structural, electrical, and optical properites of the ZnO thin films were analyzed by means of X-ray diffraction (XRD), field-emssion scanning electron microscopy (FE-SEM), Hall effect measurement, and UV-Vis spectrophotometry with variation of the Li concentraion in the ZnO sources. Without incorporation of Li element, the ZnO surface showed large spiral domains. As the Li content increases, the size of spiral domains decreased gradually, and finally formed mixed small grain and one-dimensional nanorod-like structures on the surface. This morphological evolution was explained based on an anti-surfactant effect of Li atoms on the ZnO growth surface. In addition, the Li-incorporation changed the optical and electrical properties of the ZnO thin films by modifying the crystalline defect structures by doping effects.

• 한국재료학회지
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• 제28권9호
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• pp.516-521
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• 2018

Copper oxide thin films are deposited using an ultrasonic-assisted spray pyrolysis deposition (SPD) system. To investigate the effect of substrate temperature and incorporation of a chelating agent on the growth of copper oxide thin films, the structural and optical properites of the copper oxide thin films are analyzed by X-ray diffraction (XRD), field-emssion scanning electron microscopy (FE-SEM), and UV-Vis spectrophotometry. At a temperature of less than $350^{\circ}C$, three-dimensional structures consisting of cube-shaped $Cu_2O$ are formed, while spherical small particles of the CuO phase are formed at a temperature higher than $400^{\circ}C$ due to a Volmer-Weber growth mode on the silicon substrate. As a chelating agent was added to the source solutions, two-dimensional $Cu_2O$ thin films are preferentially deposited at a temperature less than $300^{\circ}C$, and the CuO thin film is formed even at a temperature less than $350^{\circ}C$. Therefore the structure and crystalline phase of the copper oxide is shown to be controllable.

• 한국분말재료학회지
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• 제21권2호
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• pp.108-113
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• 2014

Flake-like $LiCoO_2$ nanopowders were fabricated using electrospinning. To investigate their formation mechanism, field-emssion scanning electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy were carried out. Among various parameters of electrospinning, we controlled the molar concentration of the precursor and the PVP polymer. When the molar concentration of lithium and cobalt was 0.45 M, the morphology of $LiCoO_2$ nanopowders was irregular and round. For 1.27 M molar concentration, the $LiCoO_2$ nanopowders formed with flake-like morphology. For the PVP polymer, the molar concentration was set to 0.011 mM, 0.026 mM, and 0.043 mM. Irregular $LiCoO_2$ nanopowders were formed at low concentration (0.011 mM), while flake-like $LiCoO_2$ were formed at high concentration (0.026 mM and 0.043 mM). Thus, optimized molar concentration of the precursor and the PVP polymer may be related to the successful formation of flake-like $LiCoO_2$ nanopowders. As a results, the synthesized $LiCoO_2$ nanopowder can be used as the electrode material of Li-ion batteries.

• 한국재료학회지
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• 제23권8호
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• pp.469-475
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• 2013

Al-doped ZnO(AZO) thin films were synthesized using atomid layer deposition(ALD), which acurately controlled the uniform film thickness of the AZO thin films. To investigate the electrical and optical properites of the AZO thin films, AZO films using ALD was controlled to be three different thicknesses (50 nm, 100 nm, and 150 nm). The structural, chemical, electrical, and optical properties of the AZO thin films were analyzed by X-ray diffraction, X-ray photoelectron spectroscopy, field-emssion scanning electron microscopy, atomic force microscopy, Hall measurement system, and UV-Vis spectrophotometry. As the thickness of the AZO thin films increased, the crystallinity of the AZO thin films gradually increased, and the surface morphology of the AZO thin films were transformed from a porous structure to a dense structure. The average surface roughnesses of the samples using atomic force microscopy were ~3.01 nm, ~2.89 nm, and ~2.44 nm, respectively. As the thickness of the AZO filmsincreased, the surface roughness decreased gradually. These results affect the electrical and optical properties of AZO thin films. Therefore, the thickest AZO thin films with 150 nm exhibited excellent resistivity (${\sim}7.00{\times}10^{-4}{\Omega}{\cdot}cm$), high transmittance (~83.2 %), and the best FOM ($5.71{\times}10^{-3}{\Omega}^{-1}$). AZO thin films fabricated using ALD may be used as a promising cadidate of TCO materials for optoelectronic applications.