• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.59-72
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• 1999

In this thesis, we measured the Barkhausen effect of CoFeSiB amorphous ribbon and then investigated its possibility to be used as a sensor material. We used a sample of composition $($Fe_{0.06}$$Co_{0.94}$)_${0.79}$$Si_{2.1}$$B_{18.9}$ with a thickness 12[pm1, width 2.5[rnml and length 5[cm], which was fabricated by a single roll method. In order to improve magnetic characteristics of the sample, we had carried on annealing in the magnetic field and in none magnetic field. And, experimented results to the magnetic characteristics show that the ribbon has large Barkhausen jump even in weak magnetic field below 0.5[0el. From the results, we confirmed that the sample can be used as an magnetic sensor material.

• 한국재료학회지
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• 제12권1호
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• pp.75-81
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• 2002

The ferroelectric properties of Pb(Zr,Ti)O$_3$[PZT] films degrade when the films with Pt top electrodes are annealed in hydrogen containing environment. This is due to the reduction activity of atomic hydrogen that is generated by the catalytic activity of the Pt top electrode. At the initial stage of hydrogen annealing, oxygen vacancies are formed by the reduction activity of hydrogen mainly at the vicinity of top Pt/PZT interface, resulting in a shift of P-E (polarization-electric field) hysteresis curve toward the negative electric field direction. As the hydrogen annealing time increases, oxygen vacancies are formed inside the PZT film by the inward diffusion of hydrogen ions, as a result, the polarization degrades significantly and the degree of P-E curve shift decreases gradually. The direction and the magnitude of the remnant polarization in the PZT film affect the motion of hydrogen ions which determines the degradation of polarization characteristics and the shift in the P-E hysteresis curve of the PZT capacitor during hydrogen annealing. When the remnant polarization is formed in the PZT film by applying a pre-poling voltage prior to hydrogen annealing, the direction of the P-E curve shift induced by hydrogen annealing is opposite to the polarity of the pre-poling voltage. The hydrogen-induced degradation behavior of the PZT capacitor is also affected by the internal field that has been generated in the PZT film by the charges located at the top interface prior to hydrogen annealing.

• Journal of Magnetics
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• 제11권2호
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• pp.66-69
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• 2006

Local magnetization reversal in the exchange-biased NiFe/FeMn and $[Pd/Co]_5/FeMn$ multilayers with in-plane and out-of-plane magnetic anisotropy was achieved by using laser annealing. The local annealed NiFe/FeMn film under the opposite magnetic field shows a magnetoresistance (MR) curve having two symmetric peaks at the positive and negative exchange biasing field (${\pm}H_{ex}$). The intensity of the nucleated MR peak rises as the exposed area extends during the laser annealing process, and the peak disappears under the reverse magnetic field. In the case of [Pd/Co]/FeMn films, the local magnetization reversal increased gradually as the laser power increases. The locally reversed magnetization was restored under the opposite magnetic field.

• Journal of Magnetics
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• 제7권4호
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• pp.147-150
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• 2002

The pinning direction, the spin flop behaviors and the magnetoresistive properties in top synthetic spin valve structure [NiFe/CoFe/Cu/CoFe (t$_{p2}$)/Ru/CoFe (t$_{p1}$)/IrMn] were investigated. The magnetoresistive and pinning characteristics of synthetic spin valves strongly depended on the differences in the two pinning layer thickness, ${\Delta}t(=t_{p2}-t_{p1})$. In contrast to the conventional spin valves, the pinning direction (P1) was canted off with respect to the growth field axis with ${\Delta}t$. We found that the canting angle ${\Phi}$ had different values according to the annealing field direction and ${\Delta}t$. When the samples were annealed at above the blocking temperature of IrMn with zero fields, the canted pinned layer could be set along the growth field axis. Because the easy axis which was induced by the growth field during deposition is still active in all ferromagnetic layers except the IrMn at $250{^{\circ}C}$, the pinning direction could be aligned along the growth field axis, even in 0 field annealing.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 학술대회 논문집 일렉트렛트 및 응용기술연구회
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• pp.72-76
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• 2003

The $Sr_{0.7}Bi_{2.6}Ta_2O_9$(SBT) thin films are deposited on Pt-coated electrode(Pt/$TiO_2/SiO_2$/Si) using RF magnetron sputtering method. The structural and electrical properties of SBT capacitors were influenced with annealing atmosphere. In the XRD pattern, the SBT thin films in all annealed atmosphere had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized in all annealing atmosphere and grains largely grew in oxygen annealing atmosphere. The maximum remanent polarization and the coercive electric field in oxygen annealing atmosphere are $12.40[{\mu}C/cm^2]$ and 30[kV/cm] respectively. The fatigue characteristics of SBT capacitors did not change up to $10^{10}$ switching cycles.

• 한국전기전자재료학회논문지
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• 제16권3호
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• pp.207-213
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• 2003

The Sr$\_$0.7/Bi$\_$2.6/Ta$_2$O$\_$9/(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO$_2$/SiO$_2$/Si) using RF magnetron sputtering method. The structural and electrical properties of SBT capacitors were influenced with annealing atmosphere. In the XRD pattern, the SBT thin films in all annealed atmosphere had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized in all annealing atmosphere and grain largely grew in oxygen annealing atmosphere. The maximum remnant polarization and the coercive electric field in oxygen annealing atmosphere are 12.40[${\mu}$C/cm$^2$] and 30[kV/cm] respectively. The dielectric constant and leakage current density of capacitors annealed oxygen atmosphere are 340 and 2.13${\times}$10$\^$-9/ [A/cm$^2$] respectively. The fatigue characteristics of SBT capacitors did not change up to 10$\^$10/ switching cycles.

• 한국통신학회논문지
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• 제27권3A호
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• pp.284-289
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• 2002

본 논문에서는 MRF(Markov Random field)를 이용해 영상을 분할할 때, 에너지 최적화를 위해 사용되는 simulated annealing의 수렴속도를 개선하는 방법을 제안하였다. Simulated annealing은 잡음이 포함된 영상이나, 텍스쳐 영상에서 좋은 분할 결과를 나타내지만, 수렴속도가 길다는 단점이 있다. 본 논문에서는 수렴속도를 개선하기 위해 픽셀 레이블의 초기값을 픽셀의 intensity에 따라 adaptive하게 부여하여 simulated annealing을 수행하였다. 이 방법으로 모의실험을 수행한 결과, 기존의 방법보다 수렴 속도를 크게 향상시킬 수 있었다.

• ETRI Journal
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• 제32권6호
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• pp.932-939
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• 2010

In this paper, a fast migration method is proposed. Our method executes local relocation on a model placement where an additional module is added to it for modification with a minimum number of displacements. This method is based on mean-field annealing (MFA), which produces a solution as reliable as a previously used method called simulated annealing. The proposed method requires substantially less time and hardware, and it is less sensitive to the initial and final temperatures. In addition, the solution runtime is mostly independent of the size and complexity of the input model placement. Our proposed MFA algorithm is optimized by enabling module rotation inside an energy function called permissible distances preservation energy. This, in turn, allows more options in moving the engaged modules. Finally, a three-phase cooling process governs the convergence of problem variables called neurons or spins.

• 한국전기전자재료학회논문지
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• 제11권2호
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• pp.128-132
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• 1998

2/65/35 PLZT stock solution prepared by Sol-Gel processing was spin-coated on ITO coated glass and annealed by RTA(Rapid Thermal Annealing). The crystal structure of films was reported based on the observation of crystallization process and microstructure of the film fabricated at different fabrication condition. Films were crystallized into rhombohedral structure by annealing at $750^{\circ}C$ for 5 min. As the annealing temperature increased, the size of rosette structure of the films was grown up from $2.4{\mu}m$ to $15{\mu}m$, dielectric constant was increased, coercive field was decreased 33.82 kV/cm, remnant polarization was increased to 39.84 ${\mu}C/cm^2$ and Optical transmittance was decreased.

• 전기전자학회논문지
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• 제23권2호
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• pp.704-709
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• 2019

본 논문에서는 다양한 열처리(annealing) 조건에서 tunneling field effect transistor(TFET)의 전기적 특성을 연구 하였다. TFET 샘플은 수소 혼합 가스(4 %) 및 중수소($D_2$) 혼합 가스 (4 %)를 사용하여 열처리를 진행하였으며 측정은 노이즈 차폐실에서 진행되었다. 실험 결과, 열처리 전과 비교하여 열처리 공정 후에 subthreshold slope(SS)이 33 mV / dec만큼 감소함을 확인할 수 있었다. 그리고 측정 온도 범위에서 온도가 증가할수록 $V_G=3V$ 조건에서 10 기압의 중수소 혼합 가스에 대해 평균 31.2 %의 노이즈가 개선됨을 확인할 수 있었다. $D_2$ 혼합 가스로 메탈 증착 후 열처리 공정(post metal annealing)을 실시한 결과, $I_D=100nA$ 조건에서 평균 30.7 %의 노이즈가 감소되었음을 확인할 수 있다.