• Journal of Magnetics
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• 제3권2호
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• pp.41-43
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• 1998

The frequency spectra of complex permeability have been measured as a function of ac field amplitude in the annealed amorphous $Fe_{83}Zr_7B_8Cu_2 $ ribbons. The longitudinal permeability results from the rotational magnetization at small fields, $h_o$<5 mOe in as-quenched samples. However, at the further increase of ho, the wall motion begins to be involved in the low frequency region. The permeability from the wall motion drastically decreases in the annealed sample, while that from the rotational magnetization increases up to annealing temperature of 50$0^{\circ}C$ and then drops there after.

• 한국세라믹학회지
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• 제31권10호
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• pp.1115-1122
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• 1994

ZT/PZT/ZT multi-layered thin films were deposited on silicon substrate by co-sputtering method for FEMFET device application. Effects of Pb/(Zr+Ti) ratio, films thickness, annealing conditions and substrate temperature on the ferroelectric behavior of the multi-layered films were studied. The best memory device characteristics with leakage current of 2$\times$10-8 A/$\textrm{cm}^2$ and breakdown field of about 1 MV/cm could be obtained with ZT(250 $\AA$) / PZT(1000 $\AA$)/ZT(750 $\AA$) multi-layered thin film deposited at 35$0^{\circ}C$ and post-annealed at $700^{\circ}C$ for 120 sec by RTA(Rapid Thermal Annealing).

• 대한전기학회논문지
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• 제41권4호
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• pp.379-384
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• 1992

The Fe-base amorphous ribbons with 15mm width and about 20x10S0-6Tm thickness, (FeS179-xTCrS1xT)BS116TSiS15T and (FeS181-xTMnS1xT) BS112TSiS17T (x:0-6), were prepared melt spinner. The thickness of the ribbons followed by PFC (Planar Flow Casting). The initial permeability and total core losses were measured as a function of additive elements (Cr, Mn) and annealing conditions in high frequency for the purpose of using these materials as a core of magnetic amplifier and switched mode power supplies. The initial permeabilities were enhanced and core losses were decreased by non-magnetic field annealing in proper conditions. The lowest core loss in 0.2T/10kHz was measured at 3% Cr addition amorphous ribbon, and the loss was 5.6W/kg. The permeability of the ribbon at 10kHz was about 9000.

• 한국전기전자재료학회논문지
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• 제14권2호
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• pp.123-129
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• 2001

The optimal high temperature processing conditions for the formation of Ohmic contact of Ti/Al/Pt/Au multiple layers were established for the fabrication of n$^{+}$-GaN/AlGaN/GaN HFET device. Contact resistivity as low as 3.4x10$^{-6}$ ohm-$\textrm{cm}^2$ was achieved by the annealing of the sample at 100$0^{\circ}C$ for 10 sec. using the RTA (Rapid Thermal Annealing) system. The fabricated HFET (Heterostructure Field Effect Transistor) with a structure of n'-GaN/undoped AlGaN/undoped GaN exhibited a low knee voltage of 3.5 V and a maximum source-drain current density of 180 mA/mm at Vg=0V.V.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.1069-1072
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• 2003

Germane-sillicide phase formation on S $i_{0.25}$G $e_{0.75}$ with Ni 100$\square$, Co 10$\square$/Ni 100$\square$ and Ni 50$\square$/Co 10$\square$/Ni 50$\square$ layer was studied by sheet resistance and Field Emission Scanning Electron Microscopy(FESEM). Thermal stability of nickel germane-silicide is found to be improved by sputtering Ni/Co/Ni on the SiGe. After annealing at 600, 650, $700^{\circ}C$, 30min., the nickel germane-silicide formed by Ni 50$\square$/Co 10$\square$/Ni 50$\square$ layer achieved a sheet resistance less than 17ohms/sq.(almost the same to the value before furnace annealing for 30min.) , while the process of the other two ways result in high sheet resistance and even sheet resistance fail due to Ge segregation.ion.

• JSTS:Journal of Semiconductor Technology and Science
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• 제7권2호
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• pp.82-87
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• 2007

The electrical properties of metallic junction diodes and metallic source/drain (S/D) Schottky barrier metal-oxide-semiconductor field-effect transistor (SB-MOSFET) were simulated. By using the abrupt metallic junction at the S/D region, the short-channel effects in nano-scaled MOSFET devices can be effectively suppressed. Particularly, the effects of trap states at the metal-silicide/silicon interface of S/D junction were simulated by taking into account the tail distributions and the Gaussian distributions at the silicon band edge and at the silicon midgap, respectively. As a result of device simulation, the reduction of interfacial trap states with Gaussian distribution is more important than that of interfacial trap states with tail distribution for improving the metallic junction diodes and SB-MOSFET. It is that a forming gas annealing after silicide formation significantly improved the electrical properties of metallic junction devices.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.197-197
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• 2012

Device 제작에 사용된 graphene은 일반적인 lithography 공정에서 resist residue에 의한 오염을 피할 수 없으며 이로 인하여 graphene의 pristine한 성질을 잃어버린다. 본 연구에서는 graphene을 저밀도의 argon inductively coupled plasma (Ar-ICP)를 통해 처리함으로서 graphene based back-gated field effect transistor (G-FET)의 특성변화를 유도한 결과에 대해서 보고한다. Argon capacitively coupled plasma (Ar-CCP)은 에 노출된 graphene은 강한 ion bombardment energy로 인하여 쉽게 planar C-C ${\pi}$ bonding (bonding energy: 2.7 eV)이 breaking되어 graphene의 defect이 발생되었다. 하지만 우리의 경우 저밀도의 Ar-ICP가 적용될 때 graphene의 defect이 제한되며 이와 동시에 contamination 만을 제거할 수 있었다. 소자의 전기적 측정 (Gsd-Vbg)을 통하여 contamination으로 인하여 p-doping된 graphene은 pristine 상태로 회복되었으며 mobility도 회복됨이 확인되었다. Ar-ICP를 이용한 graphene cleaning 방법은 저온공정, 대면적 공정, 고속공정을 모두 만족시키며 thermal annealing, electrical current annealing을 대체하여 graphene 기반 소자를 생산함에 있어 쉽고 빠르게 적용할 수 있는 강점이 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.370-374
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• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposistion because In and Sb has been very different feature of vapor pressure ($10^{-4}$ times) When In and Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering and we study properties of magneto-resistance by annealing.

• Transactions on Electrical and Electronic Materials
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• 제11권4호
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• pp.182-185
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• 2010

$Pb_{0.99}[(Zr_{0.6}Sn_{0.4})_{0.9}Ti_{0.1}]_{0.98}Nb_{0.02}O_3$ (PNZST) thin films were deposited by radio frequency magnetron sputtering on a $(La_{0.5}Sr_{0.5})CoO_3$ (LSCO)/Pt/Ti/$SiO_2$/Si substrate using a PNZST target with an excess PbO of 10 mole%. The thin films deposited at the substrate temperature of $500^{\circ}C$ crystallized to a perovskite phase after rapid thermal annealing (RTA). The thin films, which annealed at $650^{\circ}C$ for 10 seconds in air, exhibited good crystal structures and ferroelectric properties. The remanent polarization and coercive field of the fabricated PNZST capacitor were approximately $20uC/cm^2$ and 50 kV/cm, respectively. The reduction of the polarization after $2.2\;{\times}\;10^9$ switching cycles was less than 10%.

• Journal of Magnetics
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• 제2권2호
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• pp.50-54
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• 1997

The vacuum-annealed Ni80Fe20/Ag discontinuous multilayers were found to show giant magnetoresistive behaviors comparable to those of corresponding multilayers annealed at atmospheric pressure in a mixture of H2 and Ar. This vacuum-annealing process will offer potential advantages, enabling a continuous batch process from the deposition to the annealing. Their giant magnetoresistive behaviors were attributed to the magnetostatic coupling that are induced at the edges of the discontinuous magnetic grains. We also present our results about the multilayer patterned into a basic device for the magnetic field sensor.