• The Journal of Engineering Geology
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• v.22 no.1
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• pp.1-13
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• 2012

The purpose of this work is to gain a better understanding of the interrelationships between geological structures and slope failure in sedimentary rocks. In the studied slopes, construction-related slope failure could only be observed on the south-dipping slopes. This indicates that slope stability may be dependent on the angular relationships between the dip direction of bedding and the orientation of the slope. Slope failure continued, post-construction, around large fault zones in the studied outcrop; these fault damage zones are, however, not easily recognized in the field. Here we suggest a new method that uses accumulated fracture density to precisely identify fault damage zones. Multiple-faced slopes are now increasingly being exposed during large-scale construction projects in South Korea. This multiple-faced slope analysis indicates that the stability of a slope should be evaluated by identifying domains, through the analysis of possible slopes and their angular relationships with bedding and other discontinuities, prior to construction. Therefore, careful consideration of geological structures such as bedding and other discontinuities, and their angular relationships during the design of cuttings through sedimentary rocks, will increase the efficiency of construction and enable the safe construction of more stable slopes that will retain their stability after construction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.7
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• pp.626-630
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• 2007

The AC loss is an important issue in the design of the high temperature superconductor (HTS) power cables and fault current limiters. In these applications, a cylindrical HTS conductor is often used. In commercialization of these apparatuses, AC loss is a critical factor but not elucidated completely because of complexities in its measurement, e.g. non-uniform current distribution and phase difference between currents flowing in an individual HTS tape. We have prepared two cylindrical conductors composed of a Bi-2223 tape with different critical current density. In this paper, the AC loss characteristics of the conductors have been experimentally investigated and numerically analyzed. The result show that the measured losses for two conductors are not dependent on both arrangements and contact positions of a voltage lead. This implies that most of loss flux is only in the conductors. The loss for the Bi-2223 conductor with low critical current density is in good agreement with the calculated loss from Monoblock model, whereas the loss measured for the Bi-2223 conductor with high critical current density doesn't coincide with the loss calculated from the Monoblock model. The measured loss is also different from numerically calculated one based on the polygon model especially in low transport current.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.23-23
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• 2009

GaN-based nitride semiconductors have attracted considerable attention in high-brightness light-emitting-diodes (LEDs) and laser diodes (LDs) covering from green to ultraviolet spectral range. LED and LD heterostructures are usually grown on (0001)-$Al_2O_3$. The large lattice mismatch between $Al_2O_3$ substrates and the GaN layers leads to a high density of defects(dislocations and stacking faults). Moreover, Ga and N atoms are arranged along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs heterostructures, stress applied along the same axis can also give rise to piezoelectric polarization. The total polarization, which is the sum of spontaneous and piezoelectric polarizations, is aligned along the [0001] direction of the wurtzite heterostructures. The change in the total polarization across the heterolayers results in high interface charge densities and spatial separation of the electron and hole wave functions, redshifting the photoluminescence peak and decreasing the peak intensity. The effect of polarization charges in the GaN-based heterostructures can be eliminated by growing along the non-polar [$11\bar{2}0$] (a-axis) or [$1\bar{1}00$] (m-axis) orientation instead of thecommonly used polar [0001] (c-axis). For non-polar GaN growth on non-polar substrates, the GaN films have high density of planar defects (basal stacking fault BSFs, prismatic stacking fault PSFs), because the SFs are formed on the basal plane (c-plane) due to their low formation energy. A significant reduction in defect density was recently achieved by applying blocking layer such as SiN, AlN, and AlGaN in non-polar GaN. In this work, we were performed systematic studies of the defects in the nonpolar GaN by conventional and high-resolution transmission electron microscopy.

• Journal of the Korean earth science society
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• v.32 no.6
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• pp.548-559
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• 2011

3-D Multi-geophysical surveys were carried out around the Hwasan caldera at the Euisung Sub-basin. To overcome the limitations of resolutions in previous studies, dense gravity data and magnetotelluric (MT) data were obtained and analyzed. In this study, the independent inversion models from gravity and MT data were integrated using correlation and classification approaches for 3-D imaging of the geologic structures. A Structure Index (SI) method was proposed and applied to the integration and classification analyses. This method consists of Type Angle (TA) and Type Intensity (TI) values, which are estimated by the spatial correlation and abnormality of the physical properties. The SI method allowed the classification analysis to be effectively performed. Major findings are as follows: 1) pyroclastic rocks around the central area of the Hwasan caldera with lower density and resistivity than those of neighboring regions extended to a depth of around 1 km, 2) intrusive igneous rocks with high resistivity and density were imaged around the ring fault boundary, and 3) a basement structure with low resistivity and high density, at a depth of 3-5 km, was inferred by the SI analysis.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.25 no.4
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• pp.287-292
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• 2012

In this study, Multi-Channel Magnetic Flux Leakage(MFL) sensor - based inspection system was applied to monitor the condition of cables. This inspection system measures magnetic flux to detect the local faults(LF) of steel cable. To verify the feasibility of the proposed damage detection technique, an 8-channel MFL sensor head prototype was designed and fabricated. A steel cable bunch specimen with several types of damage was fabricated and scanned by the MFL sensor head to measure the magnetic flux density of the specimen. To interpret the condition of the steel cable, magnetic flux signals were used to determine the locations of the flaws and the level of damage. Measured signals from the damaged specimen were compared with thresholds set for objective decision making. In addition, the magnetic flux density values measured from every channel were summed to focus on the detection of axial location. And, sum of flux density were displayed with threshold. Finally, the results were compared with information on actual inflicted damages to confirm the accuracy and effectiveness of the proposed cable monitoring method.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.157-161
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• 1999

We investigated the effect of mechanical back side damage in Czochralski silicon wafer. The intensity of mechanical damage was evaluated by minority carrier recombination lifetime by laser excitation/microwave reflection photoconductance decay ($\mu$-PCD) technique, wet oxidation/preferential etching methods, near surface micro defect (NSMD) analysis, and X-ray section topography. The data indicate that the higher the mechanical damage intensity, the lower the minority carrier lifetime, and NSMD density increased proportionally, also correlated to the oxidation induced stacking fault (OISF) density. Thus, NSMD technique can be used separately from conventional etching method in OISF measurement.

• Journal of the Korean institute of surface engineering
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• v.36 no.2
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• pp.135-140
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• 2003

The difference in lattice parameter and thermal expansion coefficient between GaN and Si which results in many defects into the grown GaN is larger than that between GaN and sapphire. In order to obtain high quality GaN films on Si substrate, it is essential to understand growth characteristics of GaN. In this study, GaN layers were grown on Si(111) substrates by MOCVD at three different GaN growth temperatures ($900^{\circ}C$, $1,000^{\circ}C$ and $1,100^{\circ}C$), using AlN and LT-GaN buffer layers. Using TEM, we carried out the comparative investigation of growth characteristics of GaN by characterizing lattice coherency, crystallinity, orientation relationship and defects formed (transition region, stacking fault, dislocation, etc). The localized region with high defect density was formed due to the lattice mismatch between AlN buffer layer and GaN. As the growth temperature of GaN increases, the defect density and surface roughness of GaN are decreased. In the case of GaN grown at $1,100^{\circ}$, growth thickness is decreased, and columns with out-plane misorientation are formed.

• Journal of the Korean Society for Railway
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• v.9 no.3 s.34
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• pp.282-290
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• 2006

In the current train operation system, large scaled stations like Cheongnyangni and Yongsan are not remote controlled from the central operator but manually by local operator. It is because there are so many entering and exit of trains between depot and mainline which are operating through the large scaled stations and it is very effective to traffic flow on the mainline. Therefore, Kyong Bong Technology Co., Ltd. (KBTech) and Korea Railway Research Institute (KRRI) are continuing the research and development to import 'Autonomous Decentralized System (ADS)'as part of a new train operation control system which is a national policy project of MOCT (Ministry Of Construction & Transportation). The concept of the 'Autonomous Decentralized System (ADS)' has born in 1970's in Japan by the influences of molecular biology. The special features of ADS are being a system that able to do the online expansion, online maintenance and fault tolerance. This thesis introduces the concept of technology of ADS and also describes the system designing & development to apply with large scaled stations.

• Corrosion Science and Technology
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• v.22 no.4
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• pp.297-303
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• 2023

This study aimed to evaluate hydrogen permeation behaviors of pre-strained twinning-induced plasticity steel with or without Zn coating using electrochemical permeation technique. In contrast to un-strained and 30% strained samples, permeation current density was measured in the 60% strained sample. Tensile pre-straining at 60% involved microstructural modifications, including a high level of dislocation density and stacking fault with a semi-coherent twin boundary, which might provide a high diffusion path for hydrogen atoms. However, reproducibility of measurements of hydrogen permeation current was low due to non-uniform deformation and localized stress concentration. On the other hand, the permeation current was not measured in pre-strained TWIP steel with Zn coating. Instead, numerous blisters with some cracks were observed on the surface of the coating layer. In locally damaged Zn coating under tensile straining, hydrogen atoms could relatively easily permeate through the coating layer. However, they were trapped at the interface between the coating layer and the substrate, which might delay hydrogen penetration into the steel substrate.

• Journal of IKEEE
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• v.5 no.1 s.8
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• pp.43-51
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• 2001

As the density of memories increases, unwanted interference between cells and coupling noise between bit-lines are increased. And testing high-density memories for a high degree of fault coverage can require either a relatively large number of test vectors or a significant amount of additional test circuitry. So far, conventional test algorithms have focused on faults between neighborhood cells, not neighborhood bit-lines. In this paper, a new test algorithm for neighborhood bit-line sensitive faults (NBLSFs) based on the NPSFs(Neighborhood Pattern Sensitive Faults) is proposed. And the proposed algorithm does not require any additional circuit. Instead of the conventional five-cell or nine-cell physical neighborhood layouts to test memory cells, a three-cell layout which is minimum size for NBLSFs detection is used. Furthermore, to consider faults by maximum coupling noise by neighborhood bit-lines, we added refresh operation after write operation in the test procedure(i.e.,$write{\rightarrow}\;refresh{\rightarrow}\;read$). Also, we show that the proposed algorithm can detect stuck-at faults, transition faults, coupling faults, conventional pattern sensitive faults, and neighborhood bit-line sensitive faults.