• Title/Summary/Keyword: family of curves

Search Result 55, Processing Time 0.028 seconds

Reliability based optimization of spring fatigue design problems accounting for scatter of fatigue test data (피로시험 데이터의 산포를 고려한 스프링의 신뢰성 최적설계)

  • An, Da-Wn;Won, Jun-Ho;Choi, Joo-Ho
    • Proceedings of the KSME Conference
    • /
    • 2008.11a
    • /
    • pp.1314-1319
    • /
    • 2008
  • Fatigue reliability problems are nowadays actively considered in the design of mechanical components. Recently, Dimension Reduction Method using Kriging approximation (KDRM) was proposed by the authors to efficiently calculate statistical moments of the response function. This method, which is more tractable for its sensitivity-free nature and providing the response PDF in a few number of analyses, is adopted in this study for the reliability analysis. Before applying this method to the practical fatigue problems, accuracies are studied in terms of parameters of the KDRM through a number of numerical examples, from which best set of parameters are suggested. In the fatigue reliability problems, good number of experimental data are necessary to get the statistical distribution of the S-N parameters. The information, however, are not always available due to the limited expense and time. In this case, a family of curves with prediction interval, called P-S-N curve, is constructed from regression analysis. Using the KDRM, once a set of responses are available at the sample points at the mean, all the reliability analyses for each P-S-N curve can be efficiently studied without additional response evaluations. The method is applied to a spring design problem as an illustration of practical applications, in which reliability-based design optimization (RBDO) is conducted by employing stochastic response surface method which includes probabilistic constraints in itself. Resulting information is of great practical value and will be very helpful for making trade-off decision during the fatigue design.

  • PDF

Design of a Gerotor Pump and Experimental Investigation of Its Volumetric Displacement Characteristics (제로터 펌프의 설계 및 배제용적 특성 실험)

  • Kim, Dae-Myoung;Kim, Sung-Dong;Gu, Ji-Suk;Oh, Sung-Jin;Ham, Young-Bog
    • Transactions of the Korean Society of Mechanical Engineers A
    • /
    • v.35 no.11
    • /
    • pp.1383-1389
    • /
    • 2011
  • Gerotor-type volumetric displacement pumps are suitable for oil or water hydraulics. For this reason, many researchers have studied this topic. Gerotor pumps have been widely used in various fields. In this study, we designed a rotor profile based on an envelope of a family of curves. An analytic method for determining the volumetric displacement of the gerotor pump is verified by comparing a result obtained using CAD technology and an experimental result. Throughout the experiment, the flow rate performance was verified. In addition, we describe the design and volumetric displacement characteristics of the gerotor pump.

Anti-Mullerian Hormone Serum Concentrations in Prenatal and Postnatal Period in Murine

  • Kim, Dae Young
    • Journal of Embryo Transfer
    • /
    • v.28 no.2
    • /
    • pp.149-155
    • /
    • 2013
  • Mullerian inhibiting substance (MIS) is a member of the TGF-${\beta}$ (transforming growth factor-${\beta}$) family whose members play key roles in development, suppression of tumour growth, and feedback control of the pituitary-gonadal hormone axis. MIS is expressed in a highly tissue-specific manner in which it is restricted to male Sertoli cells and female granulose cells. The serum levels of MIS in prenatal and postnatal ICR mice were measured using the enzyme-linked immuno-solvent assay (ELISA) using the MIS/AMH antibody. Mice were grouped by age: the significant periods were at the onset of development. During sex organ differentiation, no remarkable difference between female and male foetus MIS serum levels (both<0.1 ng/ml) was observed. However, MIS serum levels in pregnant mice markedly changed (4.5~12.2 ng/ml). After birth, postnatal female and male mice serum MIS levels changed considerably (male: <0.1~138.5 ng/ml, female: 5.3~103.4 ng/ml), and the changing phase were diametrically opposed (male: decreasing, female: fluctuating). These findings suggest that MIS may have strong associations with not only develop-ment but also puberty. For further studies, establishing the standard MIS serum levels is of importance. Our study provides the basic information for the study of MIS interactions with reproductive organ disability, cancer, and the effect of other hormone or menopause. We hypothesise that if MIS is regularly injected into middle-age women, meno-pause will be delayed. We detected that serum MIS concentration curves change with age. The changing phase is different between males and females, and this difference is significant after birth. Moreover, MIS mRNA is expressed during the developmental period (prenatal) and also in the postnatal period. This finding indicates that MIS may play a significant role in the developmental stage and in growth after birth.

Estimation of Site Index and Stem Volume Equations for Larix leptolepis Stand in Jinan, Chonbuk (전북 진안 낙엽송 임분의 지위지수 및 간재적식 추정)

  • Jeon, Byung-Hwan;Lee, Sang-Hyun;Lee, Young-Jin;Kim, Hyun;Kang, Hag-Mo
    • Journal of Korean Society of Forest Science
    • /
    • v.96 no.1
    • /
    • pp.40-47
    • /
    • 2007
  • The objectives of this study were to derive site index and stem volume prediction equation based on stem analysis data for Larix leptolepis in Jinan region. The function for site index was developed by algebraic difference equation method. Polymorphic site index family curves with base age of 40 were presented based on the Schumacher height equation. The best stem volume prediction equation was suggested as $V=0.00260+0.00000399D^2H$. The simultaneous F-test using this equation showed that the estimated tree stem volumes were not significantly different (${\alpha}=0.05$ level) from the observed stem volumes for model evaluation. Therefore, site index and volume prediction equations prepared in this study could provide an indication of site quality and basic information for making of yield table, and could be used for rational forest management of Larix leptolepis stands grown in Jinan region.

A ZnO nanowire - Au nanoparticle hybrid memory device (ZnO 나노선 - Au 나노입자 하이브리드 메모리 소자)

  • Kim, Sang-Sig;Yeom, Dong-Hyuk;Kang, Jeong-Min;Yoon, Chang-Joon;Park, Byoung-Jun;Keem, Ki-Hyun;Jeong, Dong-Yuong;Kim, Mi-Hyun;Koh, Eui-Kwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2007.06a
    • /
    • pp.20-20
    • /
    • 2007
  • Nanowire-based field-effect transistors (FETs) decorated with nanoparticles have been greatly paid attention as nonvolatile memory devices of next generation due to their excellent transportation ability of charge carriers in the channel and outstanding capability of charge trapping in the floating gate. In this work, top-gate single ZnO nanowire-based FETs with and without Au nanoparticles were fabricated and their memory effects were characterized. Using thermal evaporation and rapid thermal annealing processes, Au nanoparticles were formed on an $Al_2O_3$ layer which was semi cylindrically coated on a single ZnO nanowire. The family of $I_{DS}-V_{GS}$ curves for the double sweep of the gate voltage at $V_{DS}$ = 1 V was obtained. The device decorated with nanoparticles shows giant hysterisis loops with ${\Delta}V_{th}$ = 2 V, indicating a significant charge storage effect. Note that the hysterisis loops are clockwise which result from the tunneling of the charge carriers from the nanowire into the nanoparticles. On the other hand, the device without nanoparticles shows a negligible countclockwise hysterisis loop which reveals that the influence of oxide trap charges or mobile ions is negligible. Therefore, the charge storage effect mainly comes from the nanoparticles decorated on the nanowire, which obviously demonstrates that the top-gate single ZnO nanowire-based FETs decorated with Au nanoparticles are the good candidate for the application in the nonvolatile memory devices of next generation.

  • PDF