• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
• /
• pp.244-247
• /
• 1996

We had experiment using LB method that can fabricate molecular order ultra-thin film below 100${\AA}$. LB method has known as main technology of information society in 21C, because it is not only free orientation and alignment of molecular but also ability of thickness control as molecular order. In this paper, the fabricated condition and physical properties of functional ultra-thin film of molecular order was investigated and highly efficient ultra-thin film capacitor was fabricated by using ultra-thin LB film for application as electronic device. Possibility of ultra-thin film capacitor was researched by analyzing and measuring electrical properties. Polyimide ultra-thin LB film capacitor was fabricated, ensured theoretically and experimentally its possibility in range of 10Hz∼lMHz through its frequency characteristics.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
• /
• pp.851-853
• /
• 1999

DLC thin films have been fabricated by pulsed laser deposition with various deposition parameters. The characterization of fabricated thin films was performed depending on the deposition parameters. As the kinetic energies provided by deposition temperature and the laser energy density were increased, the film showed graphite properties. Structural properties of the films were investigated by Raman spectroscopy. The growth energy should be optimized to fabricate high quality DLC thin films. DLC films showed high hardness and their friction coefficient was measured to be about 0.2 regardless of the load of the ball pin.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2006년도 춘계학술대회 논문집
• /
• pp.495-496
• /
• 2006

Electrostatically actuated nanoscale tweezers are fabricated on micro processed electrodes using FIB-CVD. Heavily doped electrode works as interconnection platform for controlling nanoscale devices. Short bent pillars are deposited to control the gap distance of main tweezers fabricated on bent ones. Two types of tweezers which have different gap distances are fabricated and tweezing motion was successfully demonstrated. The threshold voltages at snap-down of the pillars are dependent on the initial gap distance of the unactuated pillars, and the measured values were 93V for 3.6um and 30V for 2.2um. The dimension of nano tweezers and initial gap distances are controllable as demonstrated and we expect more complicated 3-dimensional shapes are also possible.

• 한국정밀공학회지
• /
• 제20권2호
• /
• pp.58-65
• /
• 2003

The conventional forming process such as squeeze casting or die casting for fabricating metal matrix composites products have a disadvantage such as non homogenous distribution of reinforcement, weak bonding between matrix and reinforcement and cost increase in parts fabrication. Thixoforming process has been accepted as a new method for fabricating the net shaped metal matrix composites with lightweight and wear resistance. In this paper, the effect of volume fraction and reinforcement sizes on mechanical properties in cylinder liner part of metal matrix composites has been investigated with processes parameters such as pressure and velocity. Moreover, the methods to obtain the thixoforged composites cylinder liner with high quality has been proposed. To evaluate the composites cylinder linear fabricated at the conditions proposed in this study, mechanical properties of fabricated composites cylinder linear were compared with those of commercial composites cylinder linear.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2006년도 춘계학술대회 논문집
• /
• pp.51-52
• /
• 2006

Gabion can be used for the purpose of preventing overflow of river and side loss of road. However the manufacturing process of the gabion is manually controlled especially to the joining process at the terminal part of gabion with small diameter wire. In this paper automatic feeding guide system was designed and fabricated to make automation. The fabricated system was tested in the factory level. Pneumatic system was considered as the main idea of the feeding system. 3/2-way and 5/2-way manual control valve, eight double-acting cylinders were used. Based on the theoretical simulation and actual test the fabricated system was well controlled. The system was applied to the patent.

• 한국정밀공학회지
• /
• 제23권7호
• /
• pp.138-145
• /
• 2006

A nanopatterning technique was proposed and demonstrated for low cost and mass productive process using the scanning probe lithography (SPL) and soft lithography. The nanometer scale structure is fabricated by the localized generation of oxide patterning on the H-passivated (100) silicon wafer, and soft lithography was performed to replicate of nanometer scale structures. Both height and width of the silicon oxidation is linear with the applied voltagein SPL, but the growth of width is more sensitive than that of height. The structure below 100 nm was fabricated using HF treatment. To overcome the structure height limitation, aqueous KOH orientation-dependent etching was performed on the H-passivated (100) silicon wafer. Soft lithography is also performed for the master replication process. Elastomeric stamp is fabricated by the replica molding technique with ultrasonic vibration. We showed that the elastomeric stamp with the depth of 60 nm and the width of 428 nm was acquired using the original master by SPL process.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2002년도 추계학술대회 논문집
• /
• pp.115-118
• /
• 2002

The purpose of this paper is to design a pick-up for the small form factor optical disk drive and to fabricate a micro-compensatory lens for the pick-up using the micro-compression molding process. At design stage, the optical elements including the objective lens and the compensatory lens are miniaturized. The height of pick-up and free working distance are designed as 2mm and 0.2% respectively. To analyze the fabricated micro-compensatory lens, the system was analyzed using the surface profile of the fabricated micro-compensatory lens and CODE V which is commercial software. The RMS wave front aberration of the system using fabricated micro-compensatory lens is 0.01677λ which is lower than Marechal's criterion, 0.07λ.

• 센서학회지
• /
• 제23권2호
• /
• pp.73-81
• /
• 2014

Silicon PIN diode radiation sensors and CMOS readout circuits were designed and fabricated in this study. The PIN diodes were fabricated using a 380-${\mu}m$-thick 4-inch n+ Si (111) wafer containing a $2-k{\Omega}{\cdot}cm$ n- thin epitaxial layer. CMOS readout circuits employed the driving and signal processes in a radiation sensor were mixed with digital logic and analog input circuits. The primary functions of readout circuits are amplification of sensor signals and the generation of the alarm signals when radiation events occur. The radiation sensors and CMOS readout circuits were fabricated in the Institute of Semiconductor Fusion Technology (ISFT) semiconductor fabrication facilities located in Kyungpook National University. The performance of the readout circuit combined with the Si PIN diode sensor was demonstrated.

• 한국표면공학회지
• /
• 제32권6호
• /
• pp.703-708
• /
• 1999

Silicides have been used extensively in ULSI logic device fabrication as contact materials for the active areas as well as the poly- Si gates. NiSi is a promising candidate for submicron device application due to less volume expansion, low formation temperature, little silicon consumption, and large stable processing temperature window. In this report, the microstructure of nickel silicides fabricated with a thermal evaporator has been investigated. We observed systematic transformation of Ni silicides of $Ni_2$Si, NiSi, $NiSi_2$, as annealing temperature increases. All the silicides have been identified by a X-ray diffractometer (XRD). The cross-sectional microstructure of silicides was examined by a transmission electron microscope (TEM) equipped with a energy dispersive spectrometer(EDS). The surface roughness of silicides was measured by scanning probe microscope(SPM). Although we observed thin oxide layer existed at the $Ni/NiSi_{x}$ interface, we fabricated successfully $550\AA$-thick planar Ni-monosilicide at the temperature range of$ 400~700^{\circ}C$.

• 한국산업정보학회논문지
• /
• 제19권2호
• /
• pp.45-49
• /
• 2014

In this work, a phase shifter radio-frequency integrated chip (RFIC) using a simple all-pass network is presented. As a tuning element of the phase shifter RFIC, tunable capacitors with a multi-layer dielectric of a para-/ferro-/para-electrics using a high tunable BST ferroelectric and a low-loss BZN paraelectric thin film were utilized. In order to evaluate and analyze the fabricated phase shifter RFIC, the same elements such as an inductor and capacitor integrated into it are also fabricated and tested. The designed phase shifter RFIC was fabricated on a quartz substrate in the size of $1.16{\times}1.21mm^2$. As the test results, the maximum phase difference of $350^{\circ}$ is obtained at 15 V and its tuning frequency bandwidth is 90 MHz from 2.72 to 2.81GHz.