• Journal of Ocean Engineering and Technology
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• v.24 no.1
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• pp.140-145
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• 2010

This study presents a detection method for mechanically fabricated defects on underwater steel pipes, using ultrasonic guided waves. Three different diameters (60, 90, and 114 mm) of 1000-mm long steel pipes were considered, along with several experimental design factors such as incident angles, incident distances, and the degrees of defects, to investigate how these factors affected the experimental results - the detectability of the mechanical defects. From the experimental results, we determined that the amplitude and arrival time of the first received wave signals gave a promising clue for distinguishing the existence of the defects and their severities. Between the amplitude and arrival time, the arrival time gave a more promising indication since it was affected by the experimental factors in a constant manner. Therefore, it was shown that the use of ultrasonic guided waves for underwater pipe inspection is feasible.

• Journal of Information Display
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• v.7 no.1
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• pp.7-11
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• 2006

In this paper, we report the fabrication of high quality polymer walls by using a monomer containing fluorine (F-monomer). Polymer walls with no phase retardation were fabricated by using photo-polymerization induced anisotropic phase separation of the mixture composed of liquid crystal (LC) and F-monomer. Thanks to the immiscibility of fluoride, we could form high quality polymer walls with no light leakage. We measured electro-optic characteristics of a twisted-nematic (TN) LC cell whose polymer walls were fabricated by using the F-monomer, and the measurements were compared with that fabricated by using the monomer without fluorine.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1162-1165
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• 2006

In this paper, the characteristics of polycrystalline silicon thin-film transistors (poly- Si TFTs) fabricated on polymer substrates are investigated. The a-Si films was laser annealed by using a XeCl excimer laser and a four-mask-processed poly-Si TFT was fabricated with fully self-aligned top gate structure. The fabricated nMOS TFT showed field-effect mobility of ${\sim}30\;cm^2/Vs$, on/off ratio of $10^5$ and threshold voltage of 5 V.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.51 no.2
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• pp.77-81
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• 2002

In this study, PZT thin films were fabricated using sol-gel processing onto Si/$SiO_2$/Ti/Pt substrates. PZT sol with different Zr/Ti ratio(20/80, 30/70, 40/60, 52/48) were prepared, respectively. The films were fabricated by using the spin-coating method on substrates. The films were heat treated at $450^{\circ}C$, $650^{\circ}C$ by rapid thermal annealing(RTA). The preferred orientation of the PZT thin films were observed by X-ray diffraction(XRD), and Scanning electron microscopy(SEM). All of the resulting PZT thin films were crystallized with perovskite phase. The fine crystallinity of the films were fabricated. Also, we found that the ferroelectric properties from the dielectric constant of the PZT thin films were over 600 degrees, P-E hysteresis constant. And the leakage current densities of films were lower than $10^{-8}A/cm^2$. It is concluded that the PZT thin films by sol-gel process to be convinced of application for ferroelectric memory device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.168-171
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• 2002

A SSIMT(Suppressed Sidewall Injection Magnetotransistor) sensor with high linearity is presented in this thesis. The prototype is fabricated by using the Hynix 0.6$\mu\textrm{m}$ P-substrate twin-well double poly three-metal CMOS Process. The fabricated SSIMT shows that variation of the collector current is extremely linear by varing the magnetic induction from -200mT to 200mT at I$\_$B/=500${\mu}$A, V$\_$CE/=2V and V$\_$SUB/=5V. The relative sensitivity is up to 120%/T. At B = 0, magnetic offset is about 79mT, there relative sensitivity is 30.5%/T. The nonlinearity of the fabricated SSIMT is measured about 1.4%.

• Proceedings of the KIEE Conference
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• 2001.11c
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• pp.223-226
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• 2001

A SMA actuator fabricated in this paper generates the large force and it's structure is very simple. The SMA actuator was fabricated by small size with diameter of 4mm and length of 38mm and also it's actuations toward all the directions can be acquired because of three SMA springs which was fabricated with diameter of 1.2mm and 30 turns. We showed into applicability to smart catheter by analyzing accurately the dynamic characteristics such as heading angle, bending angle, force, displacement. For verifying control capacity of the fuzzy controller, we compared Fuzzy controller with PID controller by simulation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.253-253
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• 2010

The Polymer/MWCNT composite films were fabricated by air-spray method under the 2 kg/$cm^2$ pressure using the multi-walled CNTs solution and the polymer on a $50{\mu}m$ kepton film substrates. We obtained the composite films which were sprayed with the MWCNT dispersion. In order to analysis the microstructure for the fabricated Polymer/MWCNT film, we used the X-ray diffraction (XRD) and SEM.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.138-138
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• 2010

X-ray systems for medical treatment use noninvasive procedures. I fabricated a high tension generator of a full-wave rectification type using a LC resonant inviter. It is said that a full-wave rectifying X-ray equipment such as the fabricated system can shorten initiating period and be precision control because of stable output, compared with the X-ray equipment of a half wave rectifying type used in the usual clinical medicine. In order to evaluate the capability of the fabricated high tension generator, I performed exposure dose characteristics experiments.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.274-274
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• 2008

This paper describes on the fabrication and characteristics of a 3C-SiC (Silicon Carbide) micro pressure sensor for harsh environment applications. The implemented micro pressure sensor used 3C-SiC thin-films heteroepitaxially grown on SOI (Si-on-insulator) structures. This sensor takes advantages of the good mechanical properties of Si as diaphragms fabricated by D-RIE technology and temperature properties of 3C-SiC piezoresistors. The fabricated pressure sensors were tasted at temperature up to $250^{\circ}C$ and indicated a sensitivity of 0.46 mV/V*bar at room temperature and 0.28 mV/V*bar at $250^{\circ}C$. The fabricated 3C-SiC/SOI pressure sensor presents a high-sensitivity and excellent temperature stability.

• Proceedings of the KIEE Conference
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• 1993.11a
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• pp.210-212
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• 1993

In this paper, a silicon microvalve has been fabricated using micromachining technology. The valve consists of the several thin silicon diaphragms which are designed to open and close depending on the pressure difference. It is supposed to pass fluids in only one direction. The thin diaphragms are fabricated by boron etch stop using an anisotropic etchant, EPW. The fabricated valve has been tested for various pneumatic pressure. According to the experimental results, the slit width of the valve increases as the pneumatic pressure increases.