• 전력전자학회:학술대회논문집
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• 전력전자학회 2008년도 하계학술대회 논문집
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• pp.601-603
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• 2008

The main purpose of this study is to design and develop the information display device for power conditioning system of photovoltaic power generation system. The function of this device is to display the information, communicate with PCS controller and store the special information. The developed device is tested to verify the performance and experimental results show the excellent performance. An actual running test is being carried out to verify the reliability of the device including PCS by applying it to 10kW level photovoltaic power generation system established in Ulsan College.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1993년도 추계학술대회 논문집
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• pp.29-34
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• 1993

In this paper, we used one-dimensional process simulator, SUPREM-II, and two-dimensional device simulator, MINIMOS 4.0 to extract optimal process parameter that can minimize degradation of device characteristics caused by process parameter variation in the case of short channel nMOSFET and pMOSFET device. From this simulation, we have derieved the relationship between process parameter and device characteristics. Here we have presented a method to extract process parameters from design trend curve(DTC) obtained by process and device simulations. We parameters to verify the validity of the DTC method. The experimental result of 0.8 $\mu\textrm{m}$ channel length devices that have been fabricated with optimal that reduces short channel effects, that is, good drain current-voltage characteristics, low body effects and threshold voltage of 1.0 V, high punchthrough and breakdown voltage of 12 V, low subthreshold swing(S.S) values of 105 mV/decade.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.236-239
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• 1995

In short channel MOSFET, it is very important to establish optimal process conditions because of variation of devise characteristics due to the process parameters. In this paper, we used process simulator and device simulator in order to optimize process parameter which changes of the device characteristics caused by process parameter variation. From this simulation, it has been derived to the dependence relations between process parameter and device characteristics. The experimental results of fabricated short channel device according to the optimal process parameters demonstrate good device characteristics.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.779-782
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• 2003

The theoretical and experimental current-voltage characteristics of Erbium silicided n-type Schottky barrier tunneling transistors (SBTTs) are discussed. The theoretical drain current to drain voltage characteristics show good correspondence and the extracted Schottky barrier height is 0.24 eV. The experimentally manufactured n-type SBTTs with 60 nm gate lengths show typical transistor behaviors in drain current to drain voltage characteristics. The drain current on/off ratio is about 10$^{5}$ at low drain voltage regime in drain current to gate voltage characteristics.

• 신재생에너지
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• 제10권4호
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• pp.22-28
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• 2014

The thermoelectric generator using solar heat was applied to the device (heat-electricity conversion device) to produce small-scale electricity. The purpose of this study was to investigate the characteristics and performance of the device, which equipped with heat pipe as heat source. The experimental results showed that efficiency of circular single evacuated solar collector was higher 2.7 times than that of rectangular solar collector. Furthermore maximum power of 5 watt was obtained when 2 devices with series array were used and it could be more improved by increasing the number of device or measurement time.

• 한국산업융합학회 논문집
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• 제6권4호
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• pp.325-331
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• 2003

This paper described the characteristics of the exhaust pressure and proposed the assistant device for detection of misfired cylinder. Misfire, one of abnormal combustion, affects a bad influence of the 3-way catalyst and emits unburned hydrocarbon. Therefore, to prevent these unusual phenomena and eliminate the factor of the environmental pollution, early detection and correction of the misfired cylinder play a very important role. The configuration of assistant device was changed by length and diameter of pipe and analyzed with the install position on the exhaust system. Experimental results showed that the configuration of assistant device is not affected more than length and diameter of pipe and the assistant device is be effective in the detection of misfired cylinder on the gasoline engine.

• 한국정밀공학회지
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• 제17권5호
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• pp.124-130
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• 2000

For measuring out the submicron order straightness, a precision measuring device is developed in this paper. The device is constructed with a hydrostatic feed table and a capacitive type sensor which is mounted to the feed table. Straightness is acquired as substracting the motion error of feed table from the measured profile with probe. Motion error of feed table is simultaneously compensated upto 0.120${\mu}{\textrm}{m}$ of linear motion error and 0.20arcsec of angular motion error using the active controlled capillary. Reversal method and strai호t-edge is used fur estimating the measuring accuracy and from the experimental result, it is verified that the device has the measuring accuracy 0.030m. Also, through the practical application on the measurement of ground surface, it is confirmed that the device is very effective to measure the submicron order straightness.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2002년도 전력전자학술대회 논문집
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• pp.693-696
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• 2002

In this paper, network management system(NMS) was developed using Ethernet network for several devices. Recently, due to the development of the information communication, network has been constructed several place. And management system using network has been studied due to the increment of necessity of remote control for industrial device. Agent board that necessity of NMS, was developed using general micro-controller, it operates like stand-alone network device, supports TCP/IP protocol suite, has the ability to connect to industrial device and communicates each other. Also manager base on MMI was developed, it operates with agent board and supports effective management. To prove this system UPS(uninterruptible power supply) is selected as the example of industrial device. Finally, experimental result verifies the communication between agent board and manager.

• 한국정밀공학회지
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• 제25권4호
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• pp.140-147
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• 2008

This paper represents an ultra precision rotational device where the smooth impact drive mechanism (SIDM) is utilized as driving mechanism. Linear motions of piezoelectric elements are converted to the rotational motion of disk by frictional forces generated between the rotational disk and the friction part that is attached to the piezoelectric element. This device was designed to drive the rotational disk using slip-slip motion mechanism instead of stick-slip motion mechanism occurred in conventional impact drive mechanism. Experimental results show that the angular velocity is increased in proportion to the magnitude and frequency of supplied voltage to piezoelectric element and decreased as the preload is increased. In our device, the smooth rotational motion was obtained when the driving frequency has been reached to 500Hz under the driving voltage of 100V.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2002년도 추계학술대회 발표 논문집
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• pp.130-136
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• 2002

Device makers want to make higher density chips as devices shrink, especially WSix poly stack down is one of the key issues. However, EPD (End Point Detection) time delay was happened in DPS+ poly chamber which is a barrier to achieve device shrink because EPD time delay killed test pattern and next generation device. To investigate the EPD time delay, a test was done with patterned wafers. This experimental was carried out combined with OES(Optical Emission Spectroscopy) and SEM (Scanning Electron Microscopy). OES was used to find corrected wavelength in WSix stack down gate etching. SEM was used to confirm WSix gate profile and gate oxide damage. Through the experiment, a new wavelength (252nm) line of plasma is selected for DPS+ chamber to call correct EPD in WSix stack down gate etching for current device and next generation device.