• Nuclear Engineering and Technology
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• v.6 no.1
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• pp.9-13
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• 1974

The exciton emission spectra of CdS single crystals excited by electrons were measured at 80$^{\circ}$K as a function o: the wave length. The measured dissociation energy of exciton bound to neutral donor was 2.0 meV, compared to the corresponding theoretical value of 2.4 to 3.2 meV. An exciton bound to neutral donor and a longitudinal optical (LO) phonon may not interact, but a free exciton dissociated from a neutral donor and a LO phonon is expected to interact each other. Therefore the origin of the spectra consisting of interaction term was located at the spectrum consisting of a free exciton dissociated from a neutral donor (I$_2$d). From the analysis of the spectra the LO phonon energy of CdS was found to be 40.5 meV.

• Korean Journal of Optics and Photonics
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• v.7 no.3
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• pp.227-231
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• 1996

The reflection spectrum of a $2H-PbI_2$ single crystal grown by vapour phase method were measured at 10 K near the fundamental absorption edge. The n= 1,2,3 Wannier exciton series and $A_{EP}$ reflection line were obtained from the reflection spectrum. Based on the 2nd phonon energy in the Raman spectrum, which is different from Nagamune's report, we suggest that $A_{EP}$ line is due to the bound state between the n=2 exciton and the 2nd phonon which surmise that this is LO phnon due to the second Raman process. The L-T splitting energy of n=1 exciton line was 6.56 meV and was consistent with the emission spectrum. The temperature dependence of the reflection spectrum showed that n=1 exciton peak was shifted to longer wavelength while, as the temperatre is raised, the sharpness of that with the increase of the L-T splitting energy decrease. From Wannier exiton series, the exciton binding energy and exciton radius was 30 meV and 14$\AA$, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.3
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• pp.127-131
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• 2003

High quality zincblende ZnTe(100) epilayers have been grown on semi-insulating $CaAs(100\pm2^{\circ})$substrate by hot-wall epitaxy. To grow high quality ZnTe epilayers, the growth temperature dependence of the surface topography, the growth rate, and the crystalline properties were investigated. From the photoluminescence measured at 10 K, the light hole and heavy hole free exciton emissions splitted by thermal tensile strain were observed and their first excited state emissions were also measured. The low temperature doublet of the heavy hole free exciton is because of the energy separation between longitudinal exciton and transverse exciton due to exciton-polariton coupling.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1070-1073
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• 2004

In this study, Tri(1-phenylpyrazolato)iridium $(Ir(ppz)_3)$ was prepared for the pure blue phosphorescent dopant and various host materials were used for the appropriate energy alignment. Although the luminance was pure blue with the CIE coordinates of x = 0.158, y = 0.139, device efficiencies didn't improve yet. Instead of finding the proper host materials, the alteration of structure of OLEDs affected the improvement of electrical and optical characteristics of the devices. It was worthy that insertion the exciton formation zone with the host material between the emitting zone and the exciton blocking layer. The device with a structure of ITO/NPB/Ir(ppz)3 doped in CBP/CBP for the exciton formation zone/BCP/Liq/Al was fabricated and the characteristics were observed compared with the devices without the exciton formation zone. When CBP was used for the exciton formation zone, the device efficiency reached to over 0.25 cd/A. While the device used CBP only for the host showed the luminous efficiency of under 0.11 cd/A

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04b
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• pp.20-21
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• 2008

Photovoltaic effects in organic solar cell were studied in a cell configuration of ITO/PEDOT:PSS/CuPd(20nm)/$C_{60}$(40nm)/BCP/Al(150nm) at room temperature. Here, the BCP layer works as an exciton blocking layer. The exciton blocking layer must transport electrons from the acceptor layer to the metal cathode with minimal increase in the total cell series resistance and should absorb damage during cathode deposition. Therefore, a proper thickness of the exciton blocking layer is required for an optimized photovoltaic cell. Several thicknesses of BCP were made between $C_{60}$ and Al. And we obtained characteristic parameters such as short-circuit current, open-circuit voltage, and power conversion efficiency of the device under the illumination of AM 1.5.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.1019-1022
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• 2007

High efficiency in Phosphorescent Organic lightemitting diodes using carbazole type exciton blocking layer were investigated and detailed mechanism for light emission process was studied. Efficiency of green PHOLEDs was enhanced by a factor 3.7.

• Bulletin of the Korean Chemical Society
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• v.17 no.11
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• pp.1000-1004
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• 1996

A random walk simulation was used to determine the triplet exciton density and annihilation rate for a two dimensional lattice of naphthalene choleic acid with small amount of β-methylnaphthalene (BMN). The results demonstrate that energy transfer efficiency (α) increases as density increases and the annihilation begins to become significant at triplet exciton densities higher then 10-3/sites. Another simulation was carried out to determine annihilation rate and unimolecular decay rate in the absence of BMN. The results indicate that the annihilation rate is equal to the unimolecular decay rate at the density of 1.2×10-3/sites.

• Journal of the Korean Chemical Society
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• v.19 no.5
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• pp.304-316
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• 1975

A formal theory to explain the Stark effect in molecular exciton states is developed using the second-quantization formalism. In this theory not only the Stark effect but also the Davydov effect are explicitly taken into consideration since the observed spectral splitting in the UV spectra for molecular crystals with two or more molecules per unit cell may be the result of combination of the above two effects. Especially for molecular crystals containing two molecules in a unit cell the splitting is shown to be hyperbolically dependent upon the strength of an externally applied, uniform electric field, from which informations regarding the excited state dipole moments of a single molecule may be obtained.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.3
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• pp.185-188
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• 2000

The dissociation of excitons bounds to neutral accepter in CdTe single crystal was investigated by measurement of temperature dependence of the photoluminescence spectra. The binding energies of CdTe single crystal were determined by PL spectrum at 12K. The free exciton (X) binding energy, the exciton binding energy on neutral donor ($D^{\circ}$, X), and the exciton binding energy on neutral acceptor ($A^{\circ}$, X) were 10 meV, 3.49 meV, and 7.17 meV respectively. From the value of activation energy of ($A^{\circ}$, X), we could show that the dissociation of ($A^{\circ}$, X) is attributed to free exciton.

• Proceedings of the Optical Society of Korea Conference
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• 2001.02a
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• pp.50-51
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• 2001

We investigate the effect of resonantly excited excitons on the optical-absorption of the n=1hh and n=2hh exciton resonances in GaAs quantum wells. Under quasistationary excitation condition using the pump and probe beam at tow temperature, we report the first observation of long range Coulomb screening by two dimensional exciton-exciton interaction, and discriminate unambiguously exciton bleaching between by long range Coulomb screening and the Pauli exclusion principle. (omitted)