• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2004.10a
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• pp.233-244
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• 2004

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_2O_3$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_2O_3$)substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}10^{16}\;cm^{-3}$ and $299\;{\textrm}cm^2/V.s$ at 293K. respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;3.3973\;eV\;-\;(2.69{\times}10^{-4}\;eV/K)T^2/(T+463K)$. After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{zn},\;Vo,\;Zn_{int},\;and\;O_{int}$ obtained by PL measurements were classified as a donors or acceptors type. In addition, we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in $ZnO/Al_2O_3$ did not form the native defects because vacuum in ZnO thin films existed in the form of stable bonds.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.5
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• pp.467-475
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• 2004

ZnO epilayer were synthesized by the pulsed laser deposition(PLD) process on $Al_2$ $O_3$substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire(A $l_2$ $O_3$) substrate at a temperature of 400 $^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are 8.27${\times}$$10^{16}$$cm^{-3}$ and 299 $\textrm{cm}^2$/Vㆍs at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}$(T)= 3.3973 eV - (2.69 ${\times}$ 10$_{-4}$ eV/K) $T^2$(T＋463k). After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Zn}$ , $V_{o}$ , Z $n_{int}$, and $O_{int}$ obtained by PL measurements were classified as a donors or accepters type. In addition, we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in ZnO/A $l_2$ $O_3$did not form the native defects because vacuum in ZnO thin films existed in the form of stable bonds.s.s.s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.74-75
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• 2005

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_2O_3$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_2O_3$) substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence. The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}10^{16}cm^{-3}$ and $299cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 3.3973 eV - ($2.69{\times}10^{-4}$ eV/K)$T_2$/(T + 463 K). The crystal field and the spin-orbit splitting energies for the valence band of the ZnO have been estimated to be 0.0041 eV and 0.0399 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the $\triangle$so definitely exists in the $\ulcorner_6$ states of the valence band of the ZnO. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.323-324
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• 2011

현재 많은 blue LED소자의 제작 공정과 소자 표면에 texturing하는 과정이 보고되어 있다. 그 중n층이 위로 올라오는 수직형 LED 구조로 인해 표면 texturing 기술은 빛의 발광 효율을 증가 시킬 수 있는 중요한 기술 중 하나가 되었다. 1 이 연구에서, 우리는 InGaN을 바탕으로 한 LED 소자의 표면 roughening을 건식과 습식 공정을 모두 거치는 과정을 통하여 소자의 발광 효율을 높이는 시도를 하였다. 최근 전도성 물질 기판 위에 증착 되어 있는 수직형 LED 소자 2,3,4는 과거의 사파이어 기판 위에 증착 되어 있는 형태의 LED 소자에 비해 우수한 소자 특성을 보인다. 이는 과거 사파이어 기판을 사용함으로써 낮은 열적 특성과 더불어 전기 정도성에 몇 가지 제약을 초래하게 되었기 때문이다. 반면, 전도성 기판은 LED 구조의 back side ohmic contact을 가능하게 하였고, 더 나은 확산 특성을 보여 주었고 작동 전압 또한 감소 하였다. N층이 위에 있는 수직형 LED 소자는 KrF pulsed excimer laser로 인해 실현 되었다. 이 laser 빛이 투명한 사파이어 기판을 통해 얇은 GaN층에 입사되면, 기판과 GaN가 분리된다. 이 레이저 기술은 laser lift-off(LLO)로 성장된 기판으로부터 LED 구조를 분리하는데 성공하게 하였다. 우리는 건식 식각 공정을 이용하여 n 층이 위에 올라와 있는 구조인 수직형 LED 소자에 roughening을 주고 다시 이 표면에 습식 식각 공정을 적용하여 거친 부분의 거칠기를 또 한번 증가시켰다. 그리고 이 거칠어진 표면은 이 공정이 진행 되기 전의 소자에 비해 빛의 발광 효율이 증가 되었다. 이 두 공정을 포함한 식각 공정은 두 가지 장점이 생겼는데, 한가지는 GaN에서 외부로 방출할 수 있는 표면 지역이 증가되었고, 다른 한가지는 가파른 거칠기 특성으로 인해 critical angle을 증가시킨 것이다.

• Journal of Sensor Science and Technology
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• v.14 no.3
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• pp.160-168
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• 2005

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_{2}O_{3}$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_{2}O_{3}$) substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence. The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}1016cm^{-3}$ and $299cm^{2}/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$=3.3973 eV-($2.69{\times}10^{-4}$ eV/K)$T^{2}$/(T+463K). The crystal field and the spin-orbit splitting energies for the valence band of the ZnO have been estimated to be 0.0041 eV and 0.0399 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_{6}$ states of the valence band of the ZnO. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-$, and $C_{1}-$exciton peaks for n = 1.

• Journal of Technologic Dentistry
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• v.39 no.3
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• pp.161-167
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• 2017

Purpose: We compare the bond strength of heat-cured PMMA of Lucitone 199 and QC-20 and Tokuyama Rebase Resin of self-cured resin, which are widely used and well accepted in clinical practice. In order to test the mechanical bonding and chemical bonding, we will compare the bond strength between EstheShot Bright, Smiletone, Repair and Rebase resins. Methods: The denture base resin used in this study was PMMA heat-cured QC-20 and Lucitone 199, polyamide resin EstheShot Bright, Smiletone. And Two types of self-curing Rapid Repair and Tokuyama Rebase were used as resection resins. To measure the bond strength, the denture specimens were fabricated in the size of $10{\times}64{\times}3.5mm$ as instructed by the manufacturer. A surface treatment agent was applied to the cut surfaces of each denture specimen, and the specimens were placed in a preformed silicone mold, and autoclaved excimer resins were prepared. The bending strength of the fabricated specimens was measured using a universal testing machine (STM-5, United Calibration Co., U.S.A.) to measure the three-point bending strength. Results: In both polycarbonate and polyacetal resin, a special resin surface treatment agent showed higher bonding strength than the resin surface treatment agent(p<0.05). Regardless of the type of surface treatment, polycarbonate showed higher bond strength than polyacetal resin(p<0.05). Conclusion: It is considered desirable to use a special surface treating agent for the thermoplastic denture base resin such as polycarbonate and polyacetal resin.

• Korean Journal of Optics and Photonics
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• v.10 no.2
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• pp.152-156
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• 1999

We have developed the pulse-width variable Quenched Dye Laser (QDL). QDL consisted of the dye cell of 5 mm length containing a $2.5{\times}10^{-3}$[mol/l] solution of Rhodamine 6G and the cylindrical lens focal length of 150 mm and quenching mirror. QDL system was pumped by s XeCl excimer laser with 150 mJ pulse energy in a 20 ns pulse at 1 Hz repetition rate. Pulse-width of QDL was measured by a noncollinear intensity autocorrelator. The focused thckness was measured by changing the position of the focusing cylindrical lens. Pulse-width of QDL as a function of the focused thickness (273.0${\mu}{\textrm}{m}$~845.0${\mu}{\textrm}{m}$) varied continuously from 86 ps to 201 ps.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.10 no.1
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• pp.13-23
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• 1984

The fluorescence intensity rations (F2.F1) of excimer (F2) to monomer (F1) of pyrene were measured as a function of the concentration of sodium dodecyl sulfate (SDS). It was found that there were not gross changes in size and shape of sphere-shape micelles in the first micelle concentration, while at concentrations above the second critical micelle concentration (CMC) the micelles grew in size with increasing concentration. Fluorescence intensities of 8-anilinonaphthalene 1-sulfonate (ANS) were also monitored as a micellar probe with varying concentrations of SDS. Results suggested that a phase transition from sphere-shaped micelles to hemicapped rod-like micelles occurred at the second CMC (17). A general formula for the axial ratio of ellip-soil-shaped micelle in the first micelle concentration was suggested. According to this general formula, the axial ratio of SDS, sodium lauryl ether sulfate and sodium laurate were 1:1, 5:2, and 5:3, respectively. The electrolyte-induced phase transition from spherical to hemicapped rod-like micelles occurred and the size of hemicapped rod-like micelles grew with increasing electrolyte concentrations. The maximum concentrations of solubilzed benzene in sphere-shaped micelles and hemicapped rod-like micelles were measured by differential spectrohpotometry. The hemicapped rod-like micelles in the presence of electrolytes grew in size with increasing amount of benzene solubilized.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.121-122
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• 2006

Recently, poly-Si TFT-LCD starts to be mass produced using excimer laser annealing (ELA) poly-Si. The main reason for this is the good quality poly-Si and large area uniformity. We report the influence of channel length and width on poly-Si TITs performance. Transfer characteristics of n-channel poly-Si thin film transistors fabricated on polycrystalline silicon (poly-Si) thin film transistors (TFTs) with various channel lengths and widths of $2-30{\mu}m$ has been investigated. In this paper, we analyzed the data of n-type TFTs. We studied threshold voltage ($V_{TH}$), on/off current ratio ($I_{ON}/I_{OFF}$), saturation current (I_{DSAT}$), and transconductance ($g_m$) of n-channel poly-Si thin film transistors with various channel lengths and widths.

• Journal of the Korean Magnetics Society
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• v.15 no.1
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• pp.21-24
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• 2005

This work is to present each properties and the interfacial characterization between PZT layer and LSMO layer of PZT/LSMO/Pt. LSMO thin film grown by KrF(248 nm) excimer lasers are used in pulsed in pulsed laser deposition(PLD). PZT coposites thin films were deposited by spin coating using a commercial resist spinner. LSMO thin film by deposition oxygen pressure 125 mtorr have rhombohedral structure on Pt(111) substrate. The PZT/LSM/Pt pre-orientate to [111] direction. The final thin films were shown that magnetic and electric property was typical value, respective. We report that the lattice between the PZT/LSMO thin film and the substrate plays a very important role and may control to another effects.