• Title/Summary/Keyword: exaggerated grain growth

Search Result 17, Processing Time 0.232 seconds

Sintering of TiB2 with Polycarbosilane (Polycarbosilane 첨가에 의한 TiB2의 소결)

  • Lee, Kwang-Jung;Kang, Shin-Hyuk;Kim, Deug-Joong
    • Journal of the Korean Ceramic Society
    • /
    • v.42 no.8 s.279
    • /
    • pp.588-592
    • /
    • 2005
  • The effect of SiC additive on the densification behavior and microstructural change of $TiB_2$ ceramics was investigated. The infiltration and direct mixing with polycarbosilane (PCS), which was converted to SiC by pyrolysis during sintering, were used for the addition of SiC. The addition of Fe enhanced the densification of $TiB_2$, but which resulted in exaggerated grain growth. However, the addition of PCS enhanced the densification and suppressed the exaggerated grain growth of $TiB_2$. Moreover, the addition of PCS using direct mixing was more effective for suppress of grain growth as compare to the addition of PCS using infiltration.

On the Growth Process of Grains Dispersed in a Liquid Matrix

  • Kim, Doh-Yeon
    • Proceedings of the Korean Powder Metallurgy Institute Conference
    • /
    • 1998.10b
    • /
    • pp.10-10
    • /
    • 1998
  • The growth process of solid grains in a liquid matrix is usually explained in tem1S of Ostwald ripening. The variation of growth (dissolution) rate as a function of grain size during Ostwald ripening predicted that the dissolution rate becomes very large as grain size decreases but the growth rate of a large grain is rather limited. Therefore. a rather uniform size distribution of grain size is maintained once after the quasi-equilibrium state is reached. Quite frequently, however, the exaggerated grain growth (EGG) is observed to occur: only a limited number of grains grow exceptionally. From the observation that the EGG occurs only for the faceted grains with apparently straight solid-liquid interfaces, the EGG is suggested to be the consequence of growth process controlled by 2-dimensional nucleation. In this study, the result by computer calculation on the grain growth process controlled by various mechanisms will be given.

  • PDF

Influence of Silicon and Seed Particles on the Reconstruction Characteristics and Exaggerated Grain Growth of MgO Protective Layer by Over-Frequency Accelerated Discharge in ACPDPs

  • Kwon, Sang-Koo;Kim, Jeong-Ho;Moon, Seung-Kyu;Choi, Jong-Kwon;Park, Kyu-Ho;Han, Sung-Su
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2008.10a
    • /
    • pp.957-960
    • /
    • 2008
  • The influences of silicon and MgO seed particle on the reconstruction characteristics of MgO protective layer were investigated to clarify the mechanism of reconstruction and exaggerated grain growth (EGG) in AC-PDP. The reconstruction and EGG are closely correlated with the driving force for nucleation and growth, interface energy and initial size distribution of MgO protective layer in plasma space during discharge in AC-PDP.

  • PDF

Magnetic Properties of Chip Inductors Prepared with V2O5-doped Ferrite Pastes (V2O5 도핑한 페라이트 페이스트로 제조된 칩인덕터의 자기적 특성)

  • Je, Hae-June
    • Journal of the Korean Magnetics Society
    • /
    • v.13 no.3
    • /
    • pp.109-114
    • /
    • 2003
  • The purpose of this study Is to investigate the effect of $V_2$O$_{5}$ addition on the microstructures and magnetic properties of 7.7${\times}$4.5${\times}$1.0 mm sized multi-layer chip inductors prepared by the screen printing method using 0∼0.5 wt% $V_2O_{5}$-doped NiCuZn ferrite pastes. With increasing the $V_2O_{5}$ content, the exaggerated grain growth of ferrite layers was developed due to the promotion of Ag diffusion and Cu segregation into the grain boundaries oi ferrites, which affected significantly the magnetic properties of the chip inductors. After sintering at $900^{\circ}C$, the inductance at 10 MHZ of the 0.5 wt% $V_2O_{5}$-doped chip inductor was 3.7 ${\mu}$H less than 4.2 ${\mu}$H of the 0.3 wt% $V_2O_{5}$-doped one, which was thought to be caused by the residual stress at the ferrite layers increased with the promotion of Ag diffusion and Cu segregation. The quality factor of the 0.5 wt% $V_2O_{5}$-doped chip inductor decreased with increasing the sintering temperature, which was considered to be caused by the electrical resistivity of the ferrite layer decreased with the promotion of Ag/cu segregation at the grain boundaries and the growth of the mean grain size of ferrite due to exaggerated grain growth of ferrite layers.

Sintering kinetics of ultrasonic spray pyrolyzed alumina powder (초음파 분무 열분해 알루미나 분체의 소결 동력학)

  • 조경식
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.7 no.2
    • /
    • pp.324-333
    • /
    • 1997
  • Porous alumina specimens with 80~92% relative densities were prepared from ultrasonic spray pyrolyzed alumina Powders by sintering at $1600^{\circ}$~ $1700^{\circ}C$. The exaggerated grain growth appeared to high sintering temperature and long soaking time. The microstructural development during sintering was investigated using image analysis. In the study of grain growth kinetics for sintering for spray prolyzed alumina powder, the activation energy for normal grain growth was 386.77 kJ/mol.

  • PDF

Effect of SiC Particle Size on the Microstructure and Mechanical Properties Of Al2O3-SiC Composite (Al2O3-SiC 복합재료의 미세조직 및 기계적 물성에 미치는 SiC 원료분말의 크기 영향)

  • 채기웅
    • Journal of the Korean Ceramic Society
    • /
    • v.41 no.2
    • /
    • pp.125-130
    • /
    • 2004
  • The effect of SiC particle size on the microstructures and mechanical properties of A1$_2$O$_3$-SiC composite was investigated. Two types of SiC powders having average particle sizes of 0.15 ${\mu}{\textrm}{m}$ and 3 ${\mu}{\textrm}{m}$ were used. The grain growth in the specimen containing 0.15 ${\mu}{\textrm}{m}$ SiC was effectively inhibited due to the fine SiC particles. However, after the formation of some abnormal grains, fast and exaggerated grain growth occurred which led to the microstructure of large grains with irregular shape. Fracture strength decreased due to the abnormal large grains. On the other hand, for specimen containing 3 ${\mu}{\textrm}{m}$ SiC showed normal grain growth behavior from initial sintering stage. Large SiC particles, however, effectively inhibited exaggerated grain growth after nucleation of a few abnormal grains. As a consequence, microstructure consisted of homogeneous elongated grains. In the A1$_2$O$_3$-2.5SiC(0.15 ${\mu}{\textrm}{m}$)-2.5SIC(3 ${\mu}{\textrm}{m}$) composite fabricated by mixing the two types of SiC powder, abnormal grain growth occurred. However, the good fracture strength was maintained regardless of microstructural changes in this specimen.

Sintering of Alumina in the Presence of Oxynitride Additives (Oxynitride의 첨가에 의한 알루미나의 소결)

  • Bae, Won-Tae;Kim, Hae-Du
    • 연구논문집
    • /
    • s.30
    • /
    • pp.111-119
    • /
    • 2000
  • Sintering of alumina powder was studied in the presence of Y-Si oxide and oxynitride additives. The main crystalline phase of the sintering aids pre-reacted at $1400^{\circ}C$ was $\alpha$ - $Y_2$$SiO_2$>$O_7$. Y-N apatite was co-existed in the Si-40N sintering aid because of its high content of N. During the sintering process, liquid phases were formed by the reaction between additives and alumina, and these liquid phases promote the densification of alumina. SEM micrographs showed that uniform grain growth occurred in the system with oxide additive(Si-0N). In the case of oxynitride additive system(Si-20N and Si-40N), bimodal microstructure was observed due to the exaggerated grain growth, As the nitrogen content in the additive system increased the exaggerated grain growth occurred extensively. Bloating, which seemed to be originated by the liberation of $N_2$ gas, occurred un the Si-40N oxynitride additive system.

Sintering Behavior of Al2O3-15v/o ZrO2(+3m/o Y2O3) Ceramics Prepared by Precipitation Method (침전법으로 제조한 Al2O3-15v/o ZrO2(+3m/o Y2O3)계 세라믹스의 소결거동)

  • 홍기곤;이홍림
    • Journal of the Korean Ceramic Society
    • /
    • v.26 no.3
    • /
    • pp.423-437
    • /
    • 1989
  • Al2O3/ZrO2 composites were prepared by precipitation method using Al2(SO4)3.18H2O, ZrOCl2.8H2O and YCl3.6H2O as starting materials and NH4OH as a precipitation agent. Al2O3/ZrO2 composites(series A) were prepared by mixing Al2O3 powder obtained by single precipitation method with ZrO2(+3m/o Y2O3) powder obtained by co-predipitation method. Al2O3/ZrO2 composites (series B) were prepared by co-precipitation method using the three starting materials. In all cases, the composition was controlled as Al2O3-15v/o ZrO2(+3m/o Y2O3). The composites of series A showed higher final relative densities than those of series B and tetagonal ZrO2 in all cases was retained to about 95% at room temperature. ZrO2 particles were coalesced more rapidly in grain boundary of Al2O3 than within Al2O3 grain. ZrO2 particles were located at 3-and 4-grain junction of Al2O3 and limited the grain growth of Al2O3. It was observed that MgO contributed to densification of Al2O3 but limited grain growth of Al2O3 by MgO was not remarkable. In all Al2O3/ZrO2 composites, exaggerated grain growth of Al2O3 was not observed and Al2O3/ZrO2 composites were found to have homogeneous microstructures.

  • PDF

Reconstruction Characteristics of MgO (111) Textured Protective Layer by Over-Frequency Accelerated Discharge in AC Plasma Display Pannel

  • Kwon, Sang-Koo;Kim, Jeong-Ho;Moon, Seung-Kyu;Kim, Hyun-Ha;Park, Kyu-Ho;Kim, Sung-Tae
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2007.08a
    • /
    • pp.224-227
    • /
    • 2007
  • The reconstruction characteristics of MgO (111) textured protective layer by over-frequency accelerated discharge in AC-PDP were investigated and correlated to the variations of electronic structures. The reconstruction process and exaggerated grain growth (EGG) were explained by defect-assisted 2-D nucleation and growth mechanism combined with charged cluster model.

  • PDF

Wear Behavior of Silicon Nitride Depending on Gas Pressure Sintering Time (질화규소의 가스압 소결 (GPS) 시간에 따른 마모거동)

  • Lee, Su-Wan;Kim, Seong-Ho
    • Korean Journal of Materials Research
    • /
    • v.10 no.1
    • /
    • pp.83-89
    • /
    • 2000
  • $Si_3N_4$ powder with 2wt% $Al_2O_3$ and 6wt% $Y_2O_3$ additives was sintered by gas pressure sintering (GPS) technique. The variations in the unlubricated wear behavior depending on sintering time were compared. Tribological properties depending on sintering time are associated with fracture toughness as well as flexural strength of materials. When increasing the sintering time, the larger elongated grains were formed as a result of exaggerated grain growth. As the fracture toughness and flexural strength decreased, the wear volume increased. On the basis of these experimental results, the unlubricated wear properties of silicon nitride were found to be governed mostly by both the fracture toughness and the flexural strength of the material.

  • PDF