• Korean Journal of Soil Science and Fertilizer
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• v.23 no.2
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• pp.94-99
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• 1990

A field experiment was conducted to study seasonal evapotranspiration above soybean canopy and its relationship with dry matter production by the Bowen ratio-energy balance method. The soybean "Paldalkong" was sown with the space of $47{\times}10cm$ at Suwon on May 27, 1988. The daily net radiation ranged from 59 to 76 percents of the total shortwave radiation under cloudless conditions, which was lower than cloud overcast condition with recorded 63 to 83 percents. The latent heat flux under overcast condition was sometimes larger than the sum of net radiation, implying transportation of energy by advection of ambient air. The linear relationship was obtained between daily or daytime net radiation and evapotranspiration. The evapotranspiration calculated by Bowen ratio-energy balance method was about 150 percent of class A pan evaporation during the growing season. The total solar radiation from June 20 to August 27 was $1043MJm^{-2}$. The 85 percent of the total shortwave radiation was used for evaporative heat. The dry matter production within the period was $836gm^{-2}$ and the water use efficiency was $2.31gDM\;kg^{-1}\;H_2O$.

• Korean Journal of Soil Science and Fertilizer
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• v.45 no.6
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• pp.1153-1156
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• 2012

Daegwallyeong area to be formed along the mountainous terrain more above 800 m of sea level is known as the cold zone to occur frequently wind, rain and fog. This study to evaluate the stability of crop production and agricultural production potential in the Daegwallyeong was calculated for the low temperature frequency of occurrence and potential evapotranspiration changes with announce the release of Korea Meteorological Administration (KMA) from 1972 to 2009 up to 38 years. Evapotranspiration calculated FAO and other international standard method authorized under the PENMAN-MONTEITH Method was used, and the low temperature onset and frequency of the Gumbel probability density function was used. As a result, the variation of day evaporation for 38 years were showed to respectively width of variation from maximum $9mm\;day^{-1}$ to minimum $0.5mm\;day^{-1}$. The frequency of reappearance to first emergence day that lasts more than 5 days with temperature $5^{\circ}C$ over is 3 April a 50-year frequency, 10 April a 25-year frequency, 20 April a 10-year frequency, 28 April a 5-year frequency, 8 May a 2-year frequency. Psychrotrophic crop to growth temperature more than $5^{\circ}C$ can be secured to stable production with planting after May 8, prior to planting for normal growth can be seen that the risk of growth.

• Journal of the Korean Institute of Gas
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• v.22 no.4
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• pp.27-31
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• 2018

Classification of explosion hazard areas is very important in terms of cost and safety in the workplace handling flammable materials. This is because the radius of the hazardous area determines whether or not the explosion-proof equipment is installed in the electrical machinery and apparatus. From November 6, 2017, KS C IEC-60079-10-1: 2015 will be issued and applied as a new standard. It is important to understand and apply the difference between the existing standard and the new standard. Leakage coefficients and compression factors were added to the leakage calculation formula, and the formula of evaporation pool leakage, application of leakage ball size, and shape of explosion hazard area were applied. The range of the safety factor K has also been changed. Also, in the radius of the hazardous area, the existing standard applies the number of ventilation to the virtual volume, but the revised standard is calculated by using the leakage characteristic value. In this study, we investigated the differences from existing standards in terms of ventilation and dilution and examined the effect on the radius of the hazard area. Comparisons and analyzes were carried out by applying revised standards to workplaces where existing explosion hazard locations were selected. The results showed that even if the ventilation and dilution were successful, the risk radius was not substantially affected.

• Journal of the Korea Concrete Institute
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• v.26 no.3
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• pp.377-384
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• 2014

Recently, the trend toward larger architectural structures continues and accelerates demand for Ultra High Strength Concrete (UHSC) which satisfies structural performance. However, UHSC has weakness in fire and the performance tests are required. In this paper, the change of mechanical properties of 100 MPa grade UHSC exposed to high temperatures ($20^{\circ}C{\sim}800^{\circ}C$) was observed to develop high temperature material model of UHSC: residual compressive strength, modulus of elasticity, property of stress-strain on monotonous loading and property of stress-strain on cyclic loading. In addition, TG/DTA and SEM Images analyses were performed to investigate chemical and physical characteristics of UHSC, and the results of this research were compared with those of previous studies. As a result, UHSC at the heating temperature of $300^{\circ}C$ showed a sharp decrease of residual compressive strength and modulus of elasticity. And It was shown that UHSC had a plastic behavior at more than $400^{\circ}C$ on the cyclic loading and revealed a same tendency in both monotonous and cyclic loading of all heating temperatures. In addition, through TG/DTA and SEM images analyses compared with those from previous studies, it was shown that the deterioration of concrete inner tissue, water evaporation and chemical reaction caused the decrease of residual compressive strength and modulus of elasticity.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.12
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• pp.56-63
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• 1994

The effects of sulfur treatments on the barrier heithts of Schottky contacts and the interface-state density of metal-insulator-semiconductor (MIS) capacitors on InP have been investigated. Schottky contacts were formed by the evaporation of Al, Au, and Pt on n-InP substrate before and after (NH$_{4}$)$_{2}$S$_{x}$ treatments, respectively. The barrier height of InP Schottky contacts was measured by their current-voltage (I-V) and capacitance-voltage (C_V) characteristics. We observed that the barrier heights of Schottky contacks on bare InP were 0.35~0.45 eV nearly independent of the metal work function, which is known to be due to the surface Fermi level pinning. In the case of sulfur-treated Au/InP ar Pt/InP Schottky diodes, However, the barrier heights were not only increased above 0.7 eV but also highly dependent on the metal work function. We have also investigated effects of (NH$_{4}$)$_{2}$S$_{x}$ treatments on the distribution of interface states in Si$_{3}$N$_{4}$InP MIS diodes where Si$_{3}$N$_{4}$ was provided by plasma enhanced chemical vapor deposition (PECVD). The typical value of interface-state density extracted feom 1 MHz C-V curve of sulfur-treated SiN$_{x}$/InP MIS diodes was found to be the order of 5${\times}10^{10}cm^{2}eV^{1}$. This value is much lower than that of MiS diodes made on bare InP surface. It is certain, therefore, that the (NH$_{4}$)$_{2}$S$_{x}$ treatment is a very powerful tool to enhance the barrier heights of Au/n-InP and Pt/n-InP Schottky contacts and to reduce the density of interface states in SiN$_{x}$/InP MIS diode.

• 한국신재생에너지학회:학술대회논문집
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• 2007.11a
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• pp.417-423
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• 2007

Oxy-gasification or oxygen-blown gasification, enables a clean and efficient use of coal and opens a promising way to CO2 capture. The coal gasification process of a slurry feed type, entrained-flow coal gasifier was numerically predicted in this paper. The purposes of this study are to develop an evaluation technique for design and performance optimization of coal gasifiers using a numerical simulation technique, and to confirm the validity of the model. By dividing the complicated coal gasification process into several simplified stages such as slurry evaporation, coal devolatilization, mixture fraction model and two-phase reactions coupled with turbulent flow and two-phase heat transfer, a comprehensive numerical model was constructed to simulate the coal gasification process. The influence of turbulence on the gas properties was taken into account by the PDF (Probability Density Function) model. A numerical simulation with the coal gasification model is performed on the Conoco-Philips type gasifier for IGCC plant. Gas temperature distribution and product gas composition are also presented. Numerical computations were performed to assess the effect of variation in oxygen to coal ratio and steam to coal ratio on reactive flow field. The concentration of major products, CO and H2 were calculated with varying oxygen to coal ratio (0.2-1.5) and steam to coal ratio(0.3-0.7). To verify the validity of predictions, predicted values of CO and H2 concentrations at the exit of the gasifier were compared with previous work of the same geometry and operating points. Predictions showed that the CO and H2 concentration increased gradually to its maximum value with increasing oxygen-coal and hydrogen-coal ratio and decreased. When the oxygen-coal ratio was between 0.8 and 1.2, and the steam-coal ratio was between 0.4 and 0.5, high values of CO and H2 were obtained. This study also deals with the comparison of CFD (Computational Flow Dynamics) and STATNJAN results which consider the objective gasifier as chemical equilibrium to know the effect of flow on objective gasifier compared to equilibrium. This study makes objective gasifier divided into a few ranges to study the evolution of the gasification locally. By this method, we can find that there are characteristics in the each scope divided.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.49-49
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• 2009

최근 범세계적인 그린에너지 정책에 관련해 화석연료를 대체할 수 있는 수소, 풍력, 태양광 등의 대체 에너지에 대한 관심이 고조되고 있다. 이러한 여러 대체에너지 중에서도 태양광을 전기에너지로 변환하는 태양전지에 관한 연구가 집중되고 있다. 태양전지는 구조적으로 단순하고 제조 공정도 비교적 간단하지만, 보다 널리 보급되기 위해서는 경제성 향상이라는 문제점을 해결해야 한다. 이를 위해서는 기존의 실리콘 태양전지를 대체할 수 있는 신물질에 대한 연구가 필요하며, 그 중에서도 반도체 기술을 이용한 박막형 태양전지는 기존의 실리콘 태양 전지가 가지고 있는 고비용이라는 문제점을 극복할 수 있을 것으로 기대를 모으고 있다. 박막형 태양전지의 박막 재료로는 CIGS, CdTe 등이 연구되어지고 있지만, 아직까지는 기존의 실리콘 태양전지에 비해 에너지변환효율이 낮은 이유로 인해 실용화가 많이 이루어지지 못하고 있는 것이 사실이다. 이러한 박막형 태양전지의 재료들 중에서도 CdTe는 이종접합 박막형 태양전지에 흡광층으로 사용되는 것으로 상온에서 1.45eV 정도의 밴드갭(band gap) 에너지를 갖는 II-VI족 화합물반도체로써 태양광 스펙트럼과 잘 맞는 이상적인 밴드랩 에너지와 높은 광흡수도 때문에 박막형 태양전지로 가장 주목을 받고 있다. CdTe 박막의 제조 방법으로는 진공증착법(vacuum evaporation), 전착법(electrodeposition), 스퍼터링법(sputtering) 등이 있지만 본 연구에서는 스퍼터링법을 이용하여 박막을 증착하였다. 이상과 같이 증착된 CdTe 박막을 화학적기계적연마(CMP, chemical mechanical polishing) 공정을 적용시킴으로써, 태양전지의 에너지변환효율에 직접적인 영향을 끼칠 수 있는 CdTe 박막의 물리적, 전기적 특성들의 변화를 연구하기 위한 선행 연구를 진행하였다. 특히 본 연구에서는 CdTe 박막의 화학적 기계적 연마 특성을 분석하여 정규화를 통한 모델링을 수행하였다. 또한 화학적기계적연마 공정 전과 후의 표면 특성을 관찰하기 위해 SEM(scanning electron microscopy)과 AFM(atomic forced microscope)를 이용하였으며, 구조적 특성 관찰을 XRD(X-ray diffraction)를 사용하여 실험을 수행하였다.

• Polymer(Korea)
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• v.27 no.5
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• pp.464-469
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• 2003

In this work, the fragrant oil release behavior of poly($\varepsilon$-caprolactone) (PCL) microcapsules containing SiO$_2$ was investigated. The SiO$_2$ was chemically treated in 10, 20, and 30 wt% hydrochloric acid and sodium hydroxide. The acid and base values were determined by Boehm's titration technique and $N_2$/77 K adsorption isotherm characteristics, the specific surface area and total pore volume were studied by BET. The PCL microcapsules containing SiO$_2$ and fragrant oil were prepared by oil-in-water (o/w) emulsion solvent evaporation method. The shape and surface of PCL microcapsules were observed using image analyzer and scanning electron microscope (SEM). The fragrant oil release behavior of PCL microcapsules was characterized using UV/vis. spectra. The average diameters of PCL microcapsules were decreased from 35 to 21 $\mu$m with increasing stirring rate. It was found that in the case of acidic treatment the fragrant oil adsorption capacity and release rate were increased due to the increase of specific surface area and acid value. In the case of basic treatment, the fragrant oil adsorption capacity and release rate were decreased due to the decrease of sp ecific surface area and the increase of acid-base interactions between SiO$_2$-NaOH and fragrant oil with increasing base value of SiO$_2$.

• Korean Journal of Materials Research
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• v.9 no.5
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• pp.460-466
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• 1999

The deep level electron traps in AP-MOCVD GaAs/undoped Al\ulcornerGa\ulcornerAs/n-type GaAs heterostructures have been investigated by means of Deep Level Transient Spectroscopy DLTS). In terms of the experimental procedure, GaAs/undoped Al\ulcornerGa\ulcornerAs/n-type GaAs heterostructures were deposited on 2" undoped semi-insulating GaAs wafers by the AP-MOCVD method at $650^{\circ}C$ with TMGa, AsH3, TMAl, and SiH4 gases. The n-type GaAs conduction layers were doped with Si to the target concentration of about 2$\times$10\ulcornercm\ulcorner. The Al content was targeted to x=0.5 and the thicknesses of Al\ulcornerGa\ulcornerAs layers were targeted from 0 to 40 nm. In order to investigate the electrical characteristics, an array of Schottky diodes was built on the heterostructures by the lift-off process and Al thermal evaporation. Among the key results of this experiment, the deep level electron traps at 0.742~0.777 eV and 0.359~0.680 eV were observed in the heterostructures; however, only a 0.787 eV level was detected in n-type GaAs samples without the Al\ulcornerGa\ulcornerAs overlayer. It may be concluded that the 0.787 eV level is an EL2 level and that the 0.742~0.777 eV levels are related to EL2 and residual oxygen impurities which are usually found in MOCVD GaAs and Al\ulcornerGa\ulcornerAs materials grown at $630~660^{\circ}C$. The 0.359~0.680 eV levels may be due to the defects related with the al-O complex and residual Si impurities which are also usually known to exist in the MOCVD materials. Particularly, as the Si doping concentration in the n-type GaAs layer increased, the electron trap concentrations in the heterostructure materials and the magnitude of the C-V hysteresis in the Schottky diodes also increased, indicating that all are intimately related.ated.

• Journal of Sensor Science and Technology
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• v.7 no.1
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• pp.67-72
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• 1998

The crystallized CuPc and PbTe films are formed by thermal evaporation and pulsed ArF excimer laser ablation. Structural and electrical properties of thin film is observed by XRD and current-voltage(I-V) curves. From XRD analysis, both PbTe and CuPc thin films show a-axis oriented structure. For the measurement of photovoltaic effect, the transverse current-voltage curve of CuPc/Si, PbTe/Si and PbTe/CuPc/Si junctions have been analyzed in the dark and under illumination. The PbTe/CuPc/Si junction exthibits a strong photovoltaic characteristics with short circuit current($J_{sc}$) of $25.46\;mA/cm^{2}$ and open-circuit voltage($V_{oc}$) of 170 mV. Quantum efficiency and power conversion efficiency are calculated to be 15.4% and $3.46{\times}10^{-2}$, respectively. Based on the results of QE and ${\eta}$, the photocurrent process of PbTe/CuPc/Si junction can be explained as following three effective steps; photocarrier generation in the CuPc layer, carrier separation at PbTe/CuPc interface, and finally a transportation of electrons through the PbTe layer.