• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권4호
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• pp.261-268
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• 1999

Laser-induced thermochemical etching has been recognized as a new powerful method for processing a variety of materials, including metals, semiconductors, ceramics, insulators and polymers. This study presents characteristics of direct etching for Si substrate using focused argon ion laser beam in aqueous KOH and $CCl_2F_2$ gas. In order to determine process conditions, we first theoretically investigated the temperature characteristics induced by a CW laser beam with a gaussian intensity distribution on a silicon surface. Major process parameters are laser beam power, beam scan speed and reaction material. We have achieved a very high etch rate up to $434.7\mum/sec$ and a high aspect ratio of about 6. Potential applications of this laser beam etching include prototyping of micro-structures of MEMS(micro electro mechanical systems), repair of devices, and isolation of opto-electric devices.

• 한국결정성장학회지
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• 제7권3호
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• pp.449-455
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• 1997

KOH 용액을 이용한 단결정 실리콘의 이방성 식각 특성을 조사하였다. n형 (100) 단결정 실리콘 웨이퍼를 시료로 사용하였으며, 식각 비율이 월등히 작은 $SiO_2$층을 실리콘 식각의 마스크로 사용하였다. 실리콘의 식각속도와 식각상태는 KOH 용액의 농도와 온도조건 뿐만 아니라 용액의 균일도, 용액의 교반속도와 교반방향 등에 따라 큰 차이가 발생하였다. 실리콘의 식각 속도는 KOH 농도가 낮아질수록 증가하며, 온도는 높아질수록 증가하는 경향을 보였으며, 20 wt%~50 wt%의 농도 범위와 $50^{\circ}C~105^{\circ}C$의 온도 범위에서 식각속도는 $10\mu \textrm{m}/hr~250\mu\textrm{m}/hr$로서 큰 폭으로 변화하였다. 식각된 표면의 거칠기중 hillock의 발생은 (100)면과 (111)면의 식각 속도 비율이 커질수록 증가함을 알 수 있었다.

• 소성∙가공
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• 제15권8호
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• pp.628-632
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• 2006

The gate mark in injection molded part is a kind of surface defects. The formation of gate mark has been investigated in this study. SEM photographs and surface roughness have been examined to study gate mark. The specimens were molded for various injection conditions, such as injection temperature, mold temperature, and injection speed. Gate diameter and mold surface condition were also molding variables. Gate marks were reduced as injection speed and mold temperature increased. Gate diameter and injection temperature did not affect the gate marks. No etching of mold surface showed no gate marks for any molding conditions.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 추계학술대회 논문집
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• pp.502-505
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• 2005

To overcome some of the limitations in the conventional photolithography technique, MC-SPL which has advantages such as flexibility and high speed was developed in the past. To make a fine pattern using MC-SPL, there are many variables to control, for example, applied load, scribing speed, chemical etching condition, and etc. In this work, the effect of contact load on the width of the pattern was investigated. The load not only influences the width of the pattern but it also affects the wear of the probe tip. It was found that it is beneficial to load the tip in two stages. Futhermore, the experimental results showed that the pattern width was more sensitive to the initial contact force.

• 대한치과보철학회지
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• 제45권4호
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• pp.407-418
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• 2007

Purpose: The objective of this study was to evaluate the effects of hydrofluoric acid concentration & etching time on the shear bond strength between IPS Empress 2 ceramic and resin cement. Material and methods: Thirty three rectangular shape ceramic specimens($20{\times}12{\times}5mm$ size, IPS Empress 2 core materials) were used for this study. The ceramic specimens divided into ten experimental groups with three specimens in each group and were etched with hydrofluoric acid(4%, 9%) according to different etching times(30s, 60s, 90s, 120s, 180s). Etched surfaces of ceramic specimens were bonded with resin cement(Rely X Unicorn) using acrylic glass tube. All cemented specimens were tested under shear loading until fracture on universal testing machine at a crosshead speed of 0.5mm/min and the maximum load at fracture(kg) was recorded. Collected shear bond strength data were analyzed with one way ANOVA and Duncan tests. All etched ceramic surfaces were examined morphologically using SEM(scanning electron microscopy). Results: Shear bond strength of etching group$(35.89{\sim}68.01MPa)$ had four to seven times greater than no-etching group$(9.53{\pm}2.29MPa)$. The ceramic specimen etched with 4% hydrofluoric acid for 60s showed the maximum shear bond strength$(68.01{\pm}11.78MPa)$. Ceramic surface etched with 4% hydrofluoric acid for 60s showed most retentive surface texture. Conclusion: It is considered that 60s etching with 4% hydrofluoric acid is optimal etching methods for IPS Empress 2 ceramic bonding.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.390-390
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• 2012

Information technology industries has grown rapidly and demanded alternative memories for the next generation. The most popular random access memory, dynamic random-access memory (DRAM), has many advantages as a memory, but it could not meet the demands from the current of developed industries. One of highlighted alternative memories is magnetic random-access memory (MRAM). It has many advantages like low power consumption, huge storage, high operating speed, and non-volatile properties. MRAM consists of magnetic-tunnel-junction (MTJ) stack which is a key part of it and has various magnetic thin films like CoFeB, FePt, IrMn, and so on. Each magnetic thin film is difficult to be etched without any damages and react with chemical species in plasma. For improving the etching process, a high density plasma etching process was employed. Moreover, the previous etching gases were highly corrosive and dangerous. Therefore, the safety etching gases are needed to be developed. In this research, the etch characteristics of CoFeB magnetic thin films were studied by using an inductively coupled plasma reactive ion etching in $CH_4/O_2/Ar$ gas mixes. TiN thin films were used as a hardmask on CoFeB thin films. The concentrations of $O_2$ in $CH_4/O_2/Ar$ gas mix were varied, and then, the rf coil power, gas pressure, and dc-bias voltage. The etch rates and the selectivity were obtained by a surface profiler and the etch profiles were observed by a field emission scanning electron microscopy. X-ray photoelectron spectroscopy was employed to reveal the etch mechanism.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1491-1493
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• 2000

Continuing improvement of microprocessor performance involves in the device size. This allow greater device speed, an increase in device packing density, and an increase in the number of functions that can reside on a single chip. However this has led to propagation delay, crosstalk noise, and power dissipation due to resistance-capacitance(RC) coupling become significant due to increased wiring capacitance, especially interline capacitance between the metal lines on the same metal level. So, MSSQ which has the permittivity between 2.5-3.2 is used to prevent from these problems. For pattering MSSQ(Methylsilsequioxane), we use RIE(Reactive Ion Etching) and MERIE(Magnetically enhanced Reactive Ion Etching) which could provide good anisotropic etching. In this study, we optimized the flow rate of $CF_{4}/O_2$ gas, RF power to obtain the best etching rate and roughness and also analyzed the etching result using $\alpha$-step profilemeter, SEM, infrared spectrum and AFM.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권5호
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• pp.396-401
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• 1999

In this study, $Ar^+$ ion laser etching process of single/poly-crystalline Si with $CCl_2F_2$ gas is investigated for MEMS applications. In general, laser direct etching process is useful in microelectronic process, fabrication of micro sensors and actuators, rapid prototyping, and complementary processing because of the advantages of 3D micromachining, local etching/deposition process, and maskless process with high resolution. In this study, a pyrolytic method, in which $CCl_2F_2$ gasetches molten Si by the focused laser, was used. In order to analyze the temperature profile of Si by the focused laser, the 3D heat conduction equation was analytically solved. In order to investigate the process parameters dependence of etching characteristics, laser power, $CCl_2F_2$ gas pressure, and scanning speed were varied and the experimental results were observed by SEM. The aspect ratio was measured in multiple scanning and the simple 3D structure was fabricated. In addition, the etching characteristics of $6\mum$ thick poly-crystalline Si on the insulator was investigated to obtain flat bottom and vertical side wall for MEMS applications.

• 한국전기전자재료학회논문지
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• 제13권6호
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• pp.526-532
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• 2000

The paste on the glass or fabrication of the PDP(Plasma Display Panel) barrier rib was selectively etched using focused A $r_{+}$ laser(λ=514 nm) and Nd:YAG(λ=532, 266 nm) laser irradiation. The depth of the etched grooves increase with increasing a laser fluence and decreasing a laser beam scan speed. Using second harmonic of Nd:YAG laser(532 nm) the etching threshold laser fluence was 6.5 mJ/c $m^2$ for the sample of PDP barrier rib. The thickness of 180 ${\mu}{\textrm}{m}$ of the sample on the glass was clearly removed without any damage on the glass substrate by fluence of 19.5J/c $m^2$beam scan speed of 20${\mu}{\textrm}{m}$ /s. In order to increase the etch rate of the barrier rib material barrier rib samples heated by a resistive heater during laser irradiation. The heated sample has many defects and becomes to be fragile. This imperfection of the structure compared to the sample without heat treatment allows the effective etching by the focused laser beam. The etch rates were 65${\mu}{\textrm}{m}$/s and 270 ${\mu}{\textrm}{m}$/s at room temperature and 20$0^{\circ}C$, respectively.y.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.1022-1025
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• 2002

This paper presents the reliability of planar InP/InGaAs avalanche photodiodes (APD's) with recess etching, which is very crucial for the commercial 10-Gb/s optical receiver application. A versatile design for the planar InP/InGaAs APD's and bias-temperature tests to evaluate long-term reliability at temperature from 200 to $250^{\circ}C$. The reliability is examined by accelerated life tests by monitoring dark current and breakdown voltage. The lifetime of the APD's is estimated by a degradation activation energy. Based on the test results, it is concluded that the planar InP/InGaAs APD's with recess etching shows the sufficient reliability for practical 10-Gb/s optical receivers.