• Title/Summary/Keyword: etching speed

Search Result 163, Processing Time 0.029 seconds

Bond strength of orthodontic brackets bonded to enamel with a self-etching primer after bleaching and desensitizer application (미백과 탈감작제 도포 후 셀프 에칭 프라이머를 이용한 브라켓 접착 시 법랑질과 브라켓 간의 결합 강도)

  • Attar, Nuray;Korkmaz, Yonca;Kilical, Yasemin;Saglam-Aydinatay, Banu;Bicer, Ceren Ozge
    • The korean journal of orthodontics
    • /
    • v.40 no.5
    • /
    • pp.342-348
    • /
    • 2010
  • Objective: The aim of this study was to compare the shear bond strengths (SBS) of orthodontic brackets bonded to enamel with a self-etching primer after bleaching, desensitizer application and combined treatment. Methods: Forty-eight premolars were randomly divided into four groups, each with n = 12 premolar samples. The four groups were; Group1: 15% hydrogen-peroxide office bleaching agent (Illumin$\acute{e}$ Office-IO), Group 2: IO + BisBlock Oxalate Dentin-Desensitizer, Group 3: Bis Block Oxalate Dentin-Desensitizer, Group 4: No treatment (control). Twenty-four hours after bonding, the specimens were tested in SBS at a crosshead speed of 5 mm/min until the brackets debonded. The failure mode of the brackets was determined by a modified adhesive remnant index. Results: Bleaching, bleaching and desensitizer treatment, and desensitizer treatment alone all significantly reduced SBS of the orthodontic brackets ($p$ = 0.001). No statistically significant difference was found between Group 1, Group 2 and Group 3 (Group 1-Group 2, $p$ = 0.564; Group 1-Group 3, $p$ = 0.371; Group 2-Group 3, $p$ = 0.133). The predominant mode of failure for the treatment groups (Group1, Group 2 and Group 3) was at the enamel-adhesive interface leaving 100% of the adhesive on the bracket base. Conclusions: Bleaching and desensitizer treatment should be delayed until the completion of orthodontic treatment.

STUDY OF THE TENSILE BOND STRENGTH OF COMPOSITES RESINS APPLIED TO ACID-ECHED ENAMEL (산처리(酸處理)된 Enamel표면(表面)에 대(對)한 Composite resin의 인장접착강도(引張接着强度)에 관(關)한 연구(硏究))

  • Lee, Young-Kun;Min, Byung-Soon;Choi, Ho-Young;Park, Sung-Jin
    • Restorative Dentistry and Endodontics
    • /
    • v.12 no.2
    • /
    • pp.45-53
    • /
    • 1987
  • The purpose of this study was to evaluate the tensile bond strength between composite resin and the human enamel. Three composite resin systems, two chemical (Clearfil Posterior, and Clearfil Posterior-3) and one light cure (Photo Clearfil-A), used with and without an intermediate resin (clearfil bonding agent), were evaluated under different amounts of load (10g, 200g and 200g for a moment) for in vitro tensile bond strength to acid-eched human enamel. Clinically intact buccal or lingual surfaces of 144 freshly extracted human permanent molars, embedded in acrylic were flattened with No #600 carborundum discs. Samples were randomly assigned to the different materials and treatments using a table of random numbers. Eight samples were thus prepared for each group(Table 2) these surfaces were etched with an acid etchant (Kurarey Co. Japan) in a mode of etching for 30 seconds, washing for 15 seconds, and drying for 30-seconds. During the polymerization of composite resin on the acid-etched enamel surfaces with and without bonding agent 10-gram, 200 gram and temporary 200 gram of load were applied. The specimens were stored in 50% relation humidity at $37^{\circ}C$ for 24 hours before testing. An universal Testing machine (Intesco model No. 2010, Tokyo, Japan) was used to apply tensile loads in the vertical directed (fig 5), and the force required for separation was recorded with a cross head speed of 0.25 mm/min and 20 kg in full scale. The results were as follow: 1. The tensile bond strength was much greater in applying a bonding agent than in not doing that. 2. The tensile bond strength of chemical cure composite resin was higher than that of light cure composite resin with applying on bonding agent on the acid-etched enamel. 3. In case of not applying a bonding agents on the acid-etching enamel, the highest tensile bond strength under 200 gram of load was measured in light cure composite resin. 4. The tensile bond strength under 200-gram of load has no relation with applying the bonding agent. 5. Under the load of 10-gram, There was significant difference in tensile bond strength as applying the bonding agent.

  • PDF

A Study on Characteristics of Polymer Organic Hard Mask Synthesis (고분자 유기하드마스크 합성에 따른 특성에 관한 연구)

  • Woo-Sik Lee
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
    • /
    • v.16 no.5
    • /
    • pp.217-222
    • /
    • 2023
  • The purpose of this paper was to synthesize a polymer organic hard mask that simplifies the manufacturing process, reduces process time significantly, and thereby lowers manufacturing costs. The results of measuring residual metals through vapor refining showed that 9-Naphthalen-1-ylcarbazole(9-NC) measured 101.75ppb in the 4th zone, 2-Naphthol (2-NA) measured 306.98ppb in the 5th zone, and 9-Fluorenone(9-F) measured between 129.05ppb across the 4th and 5th zones. After passing through a filtration system, the synthesized organic hard mask measured residual metals in the range of 9 to 7ppb. Additionally, the thermal analysis indicated a decrease of 2.78%, a molecular weight of 942, carbon content of 89.74%, and a yield of 72.4%. The etching rate was measured at an average of 18.22Å/s, and the coating thickness deviation was averaged at 1.19. For particle sizes below 0.2㎛ in the organic hard mask, no particles were observed. By varying the coating speed at 1,000, 1,500, and 1,800rpm and measuring the resulting coating thickness, the shrinkage rate ranged from 17.9% to 20.8%. The coating results demonstrated excellent adhesion to SiON, and it was evident that the organic hard mask was uniformly applied.

Characterization of various crystal planes of beta-phase gallium oxide single crystal grown by the EFG method using multi-slit structure (다중 슬릿 구조를 이용한 EFG 법으로 성장시킨 β-Ga2O3 단결정의 다양한 결정면에 따른 특성 분석)

  • Hui-Yeon Jang;Su-Min Choi;Mi-Seon Park;Gwang-Hee Jung;Jin-Ki Kang;Tae-Kyung Lee;Hyoung-Jae Kim;Won-Jae Lee
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.34 no.1
    • /
    • pp.1-7
    • /
    • 2024
  • β-Ga2O3 is a material with a wide band gap of ~4.8 eV and a high breakdown-voltage of 8 MV/cm, and is attracting much attention in the field of power device applications. In addition, compared to representative WBG semiconductor materials such as SiC, GaN and Diamond, it has the advantage of enabling single crystal growth with high growth rate and low manufacturing cost [1-4]. In this study, we succeeded in growing a 10 mm thick β-Ga2O3 single crystal doped with 0.3 mol% SnO2 through the EFG (Edge-defined Film-fed Growth) method using multi-slit structure. The growth direction and growth plane were set to [010]/(010), respectively, and the growth speed was about 12 mm/h. The grown β-Ga2O3 single crystal was cut into various crystal planes (010, 001, 100, ${\bar{2}}01$) and surface processed. The processed samples were compared for characteristics according to crystal plane through analysis such as XRD, UV/VIS/NIR/Spec., Mercury Probe, AFM and Etching. This research is expected to contribute to the development of power semiconductor technology in high-voltage and high-temperature applications, and selecting a substrate with better characteristics will play an important role in improving device performance and reliability.

Fabrication and characterization of 1.55$\mu$m SI-PBH DFB-LD for 10 Gbps optical fiber communications (10 Gb/s 급 광통신용 1.55$\mu$m SI-PBH DFB-LD의 제작 및 특성연구)

  • 김형문;김정수;오대곤;주흥로;박성수;송민규;곽봉신;김홍만;편광의
    • Korean Journal of Optics and Photonics
    • /
    • v.8 no.4
    • /
    • pp.327-332
    • /
    • 1997
  • We fabricated the high speed 1.55${\mu}{\textrm}{m}$ distributed feedback laser diodes (DFB-LD) using both two-step mesa etching process and semi-insulating InP current blocking layers. The devices characteristics were threshold current of ~15mA, slope efficiency of ~0.13mW/mA, and dynamic resistance of ~6.0Ω, with as-cleaved facets. The fabricated DFB-LD showed the single longitudinal mode with more than 40dB up to 6 $I_{th}$(CW condition), emitting at the wavelength of 0.546${\mu}{\textrm}{m}$. The -3dB bandwidth was >10㎓ at the driving current of 27mA, and the maximum -3dB bandwidth was ~18㎓ at 90 mA current, showing the superior frequency response of SI-PBH DFB-LD. In the 10Gb/s transmission experiment for 1.55${\mu}{\textrm}{m}$ DFB-LD module, maximum 10 km of single mode fiber(SMF) or 80 km of dispersion shifted fiber (DSF) could be transmitted with error free.

  • PDF

Mechanical Properties and Microstructure of the Leucite-Reinforced Glass-Ceramics for Dental CAD/CAM

  • Byeon, Seon-Mi;Song, Jae-Joo
    • Journal of dental hygiene science
    • /
    • v.18 no.1
    • /
    • pp.42-49
    • /
    • 2018
  • The computer-aided design/computer-aided manufacturing (CAD/CAM) system was introduced to shorten the production time of all-ceramic restorations and the number of patient visits. Among these types of ceramic for dental CAD/CAM, they have been processed into inlay, onlay, and crown shapes using leucite-reinforced glass-ceramics to improve strength. The purpose of this study was to observe the mechanical properties and microstructure of leucite-reinforced glass-ceramics for dental CAD/CAM. Two types of leucite-reinforced glass-ceramic blocks (IPS Empress CAD, Rosetta BM) were prepared with diameter of 13 mm and thickness of 1 mm. Biaxial flexural testing was conducted using a piston-on-three-ball method at a crosshead speed of 0.5 mm/min. Weibull statistics were used for the analysis of biaxial flexural strength. Fracture toughness was obtained using an indentation fracture method. Specimens were observed by field emission scanning electron microscopy to examine the microstructure of the leucite crystalline phase after acid etching with 0.5% hydrofluoric acid aqueous solution for 1 minute. The results of strength testing showed that IPS Empress CAD had a mean value of $158.1{\pm}8.6MPa$ and Rosetta BM of $172.3{\pm}8.3MPa$. The fracture toughness results showed that IPS Empress CAD had a mean value of $1.28{\pm}0.19MPa{\cdot}m^{1/2}$ and Rosetta BM of $1.38{\pm}0.12MPa{\cdot}m^{1/2}$. The Rosetta BM sample exhibited higher strength and fracture toughness. Moreover, the crystalline phase size and ratio were increased in the Rosetta BM sample. The above results are expected to elucidate the basic mechanical properties and crystal structure characteristics of IPS Empress CAD and Rosetta BM. Additionally, they will help develop leucite-reinforced glass-ceramic materials for CAD/CAM.

Analysis of a Novel Self-Aligned ESD MOSFET having Reduced Hot-Carrier Effects (Hot-Carrier 현상을 줄인 새로운 구조의 자기-정렬된 ESD MOSFET의 분석)

  • 김경환;장민우;최우영
    • Journal of the Korean Institute of Telematics and Electronics D
    • /
    • v.36D no.5
    • /
    • pp.21-28
    • /
    • 1999
  • A new method of making high speed self-aligned ESD (Elevated Source/Drain) MOSFET is proposed. Different from the conventional LDD (Lightly-Doped Drain) structure, the proposed ESD structure needs only one ion implantation step for the source/drain junctions, and makes it possible to modify the depth of the recessed channel by use of dry etching process. This structure alleviates hot-carrier stress by use of removable nitride sidewall spacers. Furthermore, the inverted sidewall spacers are used as a self-aligning mask to solve the self-align problem. Simulation results show that the impact ionization rate ($I_{SUB}/I_{D}$) is reduced and DIBL (Drain Induced Barrier Lowering) characteristics are improved by proper design of the structure parameters such as channel depth and sidewall spacer width. In addition, the use of removable nitride sidewall spacers also enhances hot-carrier characteristics by reducing the peak lateral electric field in the channel.

  • PDF

Electrochemical Characteristics of Porous Silicon/Carbon Composite Anode Using Spherical Nano Silica (구형 나노 실리카를 사용한 다공성 실리콘/탄소 음극소재의 전기화학적 특성)

  • Lee, Ho Yong;Lee, Jong Dae
    • Korean Chemical Engineering Research
    • /
    • v.54 no.4
    • /
    • pp.459-464
    • /
    • 2016
  • In this study, the electrochemical characteristics of porous silicon/carbon composite anode were investigated to improve the cycle stability and rate performance in lithium ion batteries. In this study, the effect of TEOS and $NH_3$ concentration, mixing speed and temperature on particle size of nano silica was investigated using $St{\ddot{o}}ber$ method. Nano porous Si/C composites were prepared by the fabrication processes including the synthesis of nano $SiO_2$, magnesiothermic reduction of nano $SiO_2$ to obtain nano porous Si by HCl etching, and carbonization of phenolic resin. Also the electrochemical performances of nano porous Si/C composites as the anode were performed by constant current charge/discharge test, cyclic voltammetry and impedance tests in the electrolyte of $LiPF_6$ dissolved inorganic solvents (EC:DMC:EMC=1:1:1vol%). It is found that the coin cell using nano porous Si/C composite has the capacity of 2,006 mAh/g and the capacity retention ratio was 55.4% after 40 cycle.

A Patterning Process for Organic Thin Films Using Discharge and Suction Needles (토출 및 흡입 Needle을 이용한 유기 박막 패터닝 공정)

  • Kim, Daeyeob;Shin, Dongkyun;Lee, Jinyoung;Park, Jongwoon
    • Journal of the Semiconductor & Display Technology
    • /
    • v.19 no.1
    • /
    • pp.79-84
    • /
    • 2020
  • Unlike a printing process, it is difficult to pattern organic thin films in the longitudinal (coating) direction using a coating process. In this paper, we have investigated the feasibility of patterning organic thin films using needles. To this end, we have slot-coated an aqueous poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) solution in the form of a fine stripe or large area and then applied the dual needle; one for discharging the main solvent of the underlying thin film and the other for sucking the dissolved thin film. We have found that the pattern width and depth increase as the moving speed of the plate decreases. However, it is observed that the sidewall slope is very gentle (the length of the slope is of the order of 200 ㎛) due to the fact that the discharged main solvent is widely spread and then isotropic etching occurs. With this scheme, we have also demonstrated that a fine stripe can be obtained by scanning the dual needle closely. To demonstrate its applicability to solution-processable organic light-emitting diodes (OLEDs), we have also fabricated OLED with the patterned PEDOT:PSS stripe and observed the insulation property in the strong light-emitting stripe.

Fabrication and Characteristic of C-doped Base AlGaAs/GaAs HBT using Carbontetrachloride $CCI_4$ ($CCI_4$ 를 사용하여 베이스를 탄소도핑한 AlGaAs/GaAs HBT의 제작 및 특성)

  • 손정환;김동욱;홍성철;권영세
    • Journal of the Korean Institute of Telematics and Electronics A
    • /
    • v.30A no.12
    • /
    • pp.51-59
    • /
    • 1993
  • A 4${\times}10^{19}cm^{3}$ carbon-doped base AlGaAs/GaAs HBY was grown using carbontetracholoride(CCl$_4$) by atmospheric pressure MOCVD. Abruptness of emitter-base junction was characterized by SIMS(secondary ion mass spectorscopy) and the doping concentration of base layer was confirmed by DXRD(double crystal X-ray diffractometry). Mesa-type HBTs were fabricated using wet etching and lift-off technique. The base sheet resistance of R$_{sheet}$=550${\Omega}$/square was measured using TLM(transmission line model) method. The fabricated transistor achieved a collector-base junction breakdown voltage of BV$_{CBO}$=25V and a critical collector current density of J$_{O}$=40kA/cm$^2$ at V$_{CE}$=2V. The 50$\times$100$\mu$$^2$ emitter transistor showed a common emitter DC current gain of h$_{FE}$=30 at a collector current density of JS1CT=5kA/cm$^2$ and a base current ideality factor of ηS1EBT=1.4. The high frequency characterization of 5$\times$50$\mu$m$^2$ emitter transistor was carried out by on-wafer S-parameter measurement at 0.1~18.1GHz. Current gain cutoff frequency of f$_{T}$=27GHz and maximum oscillation frequency of f$_{max}$=16GHz were obtained from the measured Sparameter and device parameters of small-signal lumped-element equivalent network were extracted using Libra software. The fabricated HBT was proved to be useful to high speed and power spplications.

  • PDF