• Korean Journal of Materials Research
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• v.21 no.5
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• pp.273-276
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• 2011

Ultraviolet (UV) light emitting diodes (LEDs) were grown on a patterned n-type GaN substrate (PNS) with 200 nm silicon-di-oxide (SiO2) nano pattern diameter to improve the light output efficiency of the diodes. Wet etched self assembled indium tin oxide (ITO) nano clusters serve as a dry etching mask for converting the SiO2 layer grown on the n-GaN template into SiO2 nano patterns by inductively coupled plasma etching. PNS is obtained by n-GaN regrowth on the SiO2 nano patterns and UV-LEDs were fabricated using PNS as a template. Two UV-LEDs, a reference LED without PNS and a 200 nm PNS UV-LEDs were fabricated. Scanning Electron microscopy (SEM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), Photoluminescence (PL) and Light output intensity- Input current- Voltage (L-I-V) characteristics were used to evaluate the ITO-$SiO_2$ nanopattern surface morphology, threading dislocation propagation, PNS crystalline property, PNS optical property and UVLED device performance respectively. The light out put intensity was enhanced by 1.6times@100mA for the LED grown on PNS compared to the reference LED with out PNS.

• Science of Emotion and Sensibility
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• v.14 no.4
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• pp.495-502
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• 2011

The plastic optical fiber has been previously known to have the limits in fabrication and care, due to its lack of flexibility and durability. Recently, an innovative technology of 'water-resistant & flexible optical fiber', in which the surface of etched POF(i.e., plastic optical fiber) is to be coated with a type of synthetic resin, has been developed. In this study, the post-treated POF-based flexible textiles were evaluated in terms of luminance, physical visibility and perceived visibility, according to the fabric lengths and colors of the light source. The POF-based flexible textile with 10cm fabric length and green light source appeared to show relatively higher illuminating effects. The maximum distance for perceived visibility of the POF-based flexible textiles was found to be 100m. Therefore, the results of this study are expected to be utilized as a fundamental for the further studies to develop the digital color clothing with application of POF-based flexible textile.

• Journal of Powder Materials
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• v.23 no.3
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• pp.207-212
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• 2016

In this study, Fe-Cu-Ni-Mo-C low alloy steel powder is consolidated by spark plasma sintering (SPS) process. The internal structure and the surface fracture behavior are studied using field-emission scanning electron microscopy and optical microscopy techniques. The bulk samples are polished and etched in order to observe the internal structure. The sample sintered at $900^{\circ}C$ with holding time of 10 minutes achieves nearly full density of 98.9% while the density of the as-received conventionally sintered product is 90.3%. The fracture microstructures indicate that the sample prepared at $900^{\circ}C$ by the SPS process is hard to break out because of the presence of both grain boundaries and internal particle fractures. Moreover, the lamellar pearlite structure is also observed in this sample. The samples sintered at 1000 and $1100^{\circ}C$ exhibit a large number of tiny particles and pores due to the melting of Cu and aggregation of the alloy elements during the SPS process. The highest hardness value of 296.52 HV is observed for the sample sintered at $900^{\circ}C$ with holding time of 10 minutes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.116-117
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• 2006

We investigated selective emitter effect of Porous Silicon (PSI) as antireflection coatings (ARC). The thin PSi layer, less than 100nm, was electrochemically formed by electrochemical method in about $3{\mu}m$ thick $n^+$ emitter on single crystalline silicon wafer (sc-Si). The appropriate PSi formations for selective emitter effect were carried out a two steps. A first set of samples allowed to be etched after metal-contact processing and a second one to evaporate Ag front-side metallization on PSi layer, by evaluating the I-V features The PSi has reflectance less than 20% in wavelength for 450-1000nm and porosity is about 60%. The cell made after front-contact has improved cell efficiency of about in comparison with the one made after PSi. The observed increase of efficiency for samples with PSi coating could be explained not only by the reduction of the reflection loss and surface recombination but also by the increased short-circuit current (Isc) within selective emitter. The assumption was confirmed by numerical modeling. The obtained results point out that it would be possible to prepare a solar cell over 15% efficiency by the proposed simple technology.

• Journal of the Korean Vacuum Society
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• v.21 no.2
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• pp.99-105
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• 2012

We fabricated the textured silicon (Si) surface on Si substrates by the electrochemical etching using gold (Au) nanoparticle catalysts. The antireflective property of the fabricated Si nanostructures was improved. The Au nanoparticles of ~20-150 nm were formed by the rapid thermal annealing using thermally evaporated Au films on Si. In the chemical etching, the aqueous solution containing $H_2O_2$ and HF was used. In order to investigate the effect of electrochemical etching on the etching depth and reflectance characteristics, the sample was immersed in the aqueous etching solution for 1 min with and without applied cathodic voltages of -1 V and -2 V. As a result, the solar weighted reflectance, i.e., the averaged reflectance with considering solar spectrum (air mass 1.5), could be efficiently reduced for the electrochemically etched Si by applying the cathodic voltage of -2 V, which is expected to be useful for Si solar cell applications.

• The korean journal of orthodontics
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• v.41 no.1
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• pp.51-58
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• 2011

Objective: To evaluate the shear bond strength (SBS), fracture mode, wire pull out (WPO) resistance and microleakage between low-shrinking and conventional composites used as a lingual retainer adhesive. Methods: A total of 120 human mandibular incisor teeth, extracted for periodontal reasons, were collected. Sixty of them were separated into two groups. To determine the SBS, either Transbond-LR (3M-Unitek) or Silorane (3M-Espe) was applied to the lingual surface of the teeth by packing the material into standard cylindrical plastic matrices (Ultradent) to simulate the lingual retainer bonding area. To test WPO resistance, 20 samples were prepared for each composite where the wire was embedded in the composite materialand cured. Then tensile stress was applied until failure of the composite occurred. The remaining 60 teeth were divided into two groups and multi-stranded 0.0215-inch diameter wire was bonded with the same composites. Microleakage was evaluated by the dye penetration method. Statistical analyses were performed by Wilcoxon, Pearson chi-square, and Mann-Whitney-U tests at p < 0.05 level. Results: The SBS and WPO results were not statistically significant between the two groups. Significant differences were found between the groups in terms of fracture mode (p < 0.001). Greater percentages of the fractures showed mix type failure (85%) for Silorane and adhesive (60%) for Transbond-LR. Microleakage values were lower in low-shrinking composite than the control and this difference was found to be statistically significant (p < 0.001). Conclusions: Low-shrinking composite produced sufficient SBS, WPO and microleakage values on the etched enamel surfaces, when used as a lingual retainer composite.

• Korean Journal of Optics and Photonics
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• v.15 no.1
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• pp.79-85
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• 2004

We report on a transmittance controlled photomask with phase patterns on the back quartz surface. Theoretical analysis for changes in illumination pupil shape with respect to the variation of size and density of backside phase patterns and experimental results for improvement of critical dimension uniformity on a wafer by using the transmittance controlled photomask are presented. As phase patterns for controlling transmittance of the photomask we used etched contact-hole type patterns with 180" rotative phase with respect to the unetched region. It is shown that pattern size on the backside of the photomask must be made as small as possible in order to keep the illumination pupil shape as close as possible to the original pupil shape and to achieve as large an illumination intensity drop as possible at a same pattern density. The distribution of illumination intensity drop suitable for correcting critical dimension error was realized by controlling pattern density of the contact-hole type phase patterns. We applied this transmittance controlled photomask to a critical layer of DRAM (Dynamic Random Access Memory) having a 140nm design rule and could achieve improvement of the critical dimension uniformity value from 24.0 nm to 10.7 nm in 3$\sigma$.TEX>.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.942-945
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• 1999

In this work, we proposed Proper etching algorithm for ultra-large scale integrated circuit device and simulated etching process using the proposed algorithm in the case of ICP (inductive coupled plasma) 〔1〕source. Until now, many algorithms for etching process simulation have been proposed such as Cell remove algorithm, String algorithm and Ray algorithm. These algorithms have several drawbacks due to analytic function; these algorithms are not appropriate for sub 0.1 ${\mu}{\textrm}{m}$ device technologies which should deal with each ion. These algorithms could not present exactly straggle and interaction between Projectile ions and could not consider reflection effects due to interactions among next projectile ions, reflected ions and sputtering ions, simultaneously In order to apply ULSI process simulation, algorithm considering above mentioned interactions at the same time is needed. Proposed algorithm calculates interactions both in plasma source region and in target material region, and uses BCA (binary collision approximation4〕method when ion impact on target material surface. Proposed algorithm considers the interaction between source ions in sheath region (from Quartz region to substrate region). After the collision between target and ion, reflected ion collides next projectile ion or sputtered atoms. In ICP etching, because the main mechanism is sputtering, both SiO$_2$ and Si can be etched. Therefore, to obtain etching profiles, mask thickness and mask composition must be considered. Since we consider both SiO$_2$ etching and Si etching, it is possible to predict the thickness of SiO$_2$ for etching of ULSI.

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.287-292
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• 1997

This study was tried to form the silica waveguide using high density plasma. Plasma characteristics have been investigated as a function of etch parameters using a single Langmuir probe and optical emission spectroscopy(OES). As etch parameters, $CF_4/CHF_3$ ratio, bias power, and source power were chosen as main variables. The oxide etch characteristics of inductively coupled plasma(ICP) dry etcher such as the etch rate, etch profile, and surface roughness were investigated s a function of etch parameters. On the basis of these results, the core pattern of the wave guide composed of $SiO_2-P_2O_5$ was formed. It was confirmed that the etch rate of $SiO_2-P_2O_5$ core layer was 380 nm/min and the aluminum selectivity to oxide, that is, mask layer was approximately 30:1. The SEM images showed vertical etched profiles and minimal loss of pattern width.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.213-216
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• 2001

Etching behaviors of ferroelectric $YMnO_3$ thin films were studied by an inductively coupled plasma (ICP). Etch characteristic on ferroelectric $YMnO_3$ thin film have been investigated in terms of etch rate, selectivity and etch profile. The maximum etch rate of $YMnO_3$ thin film is $300{\AA}/min$ at $Ar/Cl_2$ of 2/8, RF power of 800W, dc bias voltage of 200V, chamber pressure of 15mTorr and substrate temperature of $30^{\circ}C$. Addition of $CF_4$ gas decrease the etch rate of $YMnO_3$ thin film. From the results of XPS analysis, YFx compounds were found on the surface of $YMnO_3$ thin film which is etched in $Ar/Cl/CF_{4}$ plasma. The etch profile of $YMnO_3$ film is improved by addition of $CF_4$ gas into the $Ar/Cl_2$ plasma. These results suggest that fluoride yttrium acts as a sidewall passivants which reduce the sticking coefficient of chlorine on $YMnO_3$.