• Korean Journal of Materials Research
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• v.29 no.3
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• pp.155-159
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• 2019

Surface plasmon resonance is the resonant oscillation of conduction electrons at the interface between negative and positive permittivity material stimulated by incident light. In particular, when light transmits through the metallic microhole structures, it shows an increased intensity of light. Thus, it is used to increase the efficiency of devices such as LEDs, solar cells, and sensors. There are various methods to make micro-hole structures. In this experiment, micro holes are formed using a wet chemical etching method, which is inexpensive and can be mass processed. The shape of the holes depends on crystal facets, temperature, the concentration of the etchant solution, and etching time. We select a GaAs(100) single crystal wafer in this experiment and satisfactory results are obtained under the ratio of etchant solution with $H_2SO_4:H_2O_2:H_2O=1:5:5$. The morphology of micro holes according to the temperature and time is observed using field emission - scanning electron microscopy (FE-SEM). The etching mechanism at the corners and sidewalls is explained through the configuration of atoms.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.46.2-46.2
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• 2010

For use of superstrate thin-film solar cells, surface texture of the transparent conductive oxide (TCO) has been used to enhance short-circuit currents by increasing light trapping into the cell. ZnO:Al films were deposited by using DC magnetron sputtering on glass substrates with ceramic (ZnO:$Al_2O_3$) target. The as-deposited TCO before texturing exhibited high transparencies (T > 85% for visible light including all reflection losses) and excellent electrical properties ($r=3-6{\times}10^{-4}{\Omega}.cm$). The optical and electrical properties of the TCO are influenced by the texturing conditions such as not only etchant dilutions but also etching time. We obtained the haze value of 14-16 resulting in increase in light trapping and short-circuit currents also.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.30 no.4 s.247
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• pp.451-456
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• 2006

The process for reducing the weight of the structure is chiefly performed by the machine processing. But, increasing the weight for strength of welding zone and geometrical defect are occurred in machine processing. In this study, chemical milling is applied to reduce the weight of the cylinder. Before chemical milling is applied to the cylinder, specimen testing is performed. After the specimen testing, NaOH 15% is selected to perform the chemical milling. After the chemical milling, the velocity of reagent is 0.0016 mm/min and the thickness of cylinder is about 2.4 mm after chemical milling.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1111-1113
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• 2004

n+ etching process is investigated in the fabrication of TFF-LCD using low resistance data line of Mo/Al/Mo. Problems of consumption of upper Mo layer and contamination of channel area are resolved. Either of HCl or $Cl_2$ can be selected as a main etchant gas, and either of $SF_6$ or $CF_4$ can be selected as an additive. Plasma treatment after n+ etching process can reduce the off-current high problem.

• Journal of the Korean institute of surface engineering
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• v.28 no.5
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• pp.309-319
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• 1995

The substrate patterned with the dry film has the cavity which has the $90^{\circ}$ wall angle. Electroplating Cu on this patterned substrate has the differrent shape history with the electrochemical parameters. By potential theory model, the reason of the variation of the shape change with the these parameters was investigated. The shape history could be explained by the current flow and the correlated area effects. By embedding the Ni layer between the Cu layers, shape history with the time was obtained experimentally and the results was compared with the numerical analysis by BEM. The adhesive Cr-Cu film in TAB application was etched with the various condition. The best condition for the etchant of the Cr-Cu film was found.

• Korean Journal of Materials Research
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• v.14 no.9
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• pp.664-669
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• 2004

Anodic aluminum oxide (AAO) with pores of various diameter, density, and thickness values was obtained through control of the anodization parameters including voltage, temperature, pore widening time, anodization time, etc. The pore diameter was controlled by a pore widening in an etchant, and alumina templates having stepped nano-channels were fabricated by repetition of anodization and pore widening processes. Stepped carbon nanotubes (CNTs) were then grown on the stepped AAO templates by pyrolysis of acetylene without using the catalyst. High-resolution transmission electron microscopy images revealed that CNTs have a multi-wall structure made of graphite flakes of several nm sizes. The current-voltage characteristic of the sloped and linear CNTs were also examined.

• Transactions on Electrical and Electronic Materials
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• v.9 no.4
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• pp.156-162
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• 2008

We report results on a study of inductively coupled plasma (ICP) etching of Parylene-C (poly-monochloro-para-xylylene) films using an $O_2$ gas. Effects of process parameters on etch rates were investigated and are discussed in this article from the standpoint of plasma parameter measurements, performed using a Langmuir probe and modeling calculation. Process parameters of interest include ICP source power and pressure. It was shown that major etching agent of polymer films was oxygen atoms O($^3P$). At the same time it was proposed that positive ions were not effective etchant, but ions played an important role as effective channel of energy transfer from plasma towards the polymer.

• Journal of the Korean Society for Precision Engineering
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• v.21 no.4
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• pp.32-38
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• 2004

Laser-induced thermochemical wet etching of titanium in phosphoric acid has been investigated to examine the feasibility of this method fur fabrication of microstructures. Cutting, drilling, and milling of titanium foil were carried out while examining the influence of process parameters on etch width, etch depth, and edge straightness. Laser power, scanning speed of workpiece, and etchant concentration were chosen as major process parameters influencing on temperature distribution and reaction rate. Etch width increased almost linearly with laser power showing little dependence on scanning speed while etch depth showed wide variation with both laser power and scanning speed. A well-defined etch profile with good surface quality was obtained at high concentration condition. Fabrication of a hole, micro cantilever beam, and rectangular slot with dimension of tess than 100${\mu}{\textrm}{m}$ has been demonstrated.

• Textile Coloration and Finishing
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• v.1 no.1
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• pp.26-34
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• 1989

The selective chemical degradation or etching of PET based on an organic amine attack on the ester group. The techniques involves the chemical removal of loss ordered amorphous regions or crystalline regions, which are essentially unaffected by the degradative etchant. Thus, most of previous studies have limited to consideration which has been given to structural changes taking place. Therefore, this study was carried out to investigate surface characterization, dyeing properties of PET film hydrazinolyzed with hydrazine hydrate in methanol. PET film was treated with 30% hydrazine hydrate in methanol at $30^\circ{C}$ for various time intervals. The total surface tension of treated PET increased, the dispersion force decreased and the hydrogen bonding force increased. The equilibrium dye adsorption, dyeing rate and apparent diffusion coefficient of acid dyes increased, and the apparent activation energies of diffusion decreased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.23-26
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• 1997

This work presents the TMAH/IPA anisotropic etching characteristics with addition of Pyrazine. (100) Si etching rate of 0.747 ${\mu}{\textrm}{m}$/min at 8$0^{\circ}C$ was obtained using TMAH 25 wt.% / IPA 17 vol.% / pyrazine 0.1 g. The etching rate of (100) Si is increased about 52% compare to pure TMAH 25 wt.%. But etching rate of (100) Si is decreased with increasing Pyrazine additive. Activation energy of TMAH/IPA/pyrazine is much lower than TMAH and TMAH/IPA solutions. Addition of Pyrazine does not effect on surface flatness and decreases undercutting ratio about 20 %. Therefore, TMAH/IPA/pyrazine is an attractive anisotropic etchant because of alkaline-ion free.